JPS5621380A - Photosemiconductor device - Google Patents
Photosemiconductor deviceInfo
- Publication number
- JPS5621380A JPS5621380A JP9584279A JP9584279A JPS5621380A JP S5621380 A JPS5621380 A JP S5621380A JP 9584279 A JP9584279 A JP 9584279A JP 9584279 A JP9584279 A JP 9584279A JP S5621380 A JPS5621380 A JP S5621380A
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- substrate
- light
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 abstract 4
- 238000009413 insulation Methods 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 229910003437 indium oxide Inorganic materials 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To hieghten the sensitivity of a photoinformation-detecting memory device, by attaching an insulation film, while piling the edge portions on a region, on the surface of a semiconductor substrate which is exposed between a source region and a drain region, and also by providing this surface with a light-pervious floating electrode. CONSTITUTION:An n<+>-type source region 2 and an n<+>-type drain region 3 are dispersingly formed on a p-type Si substrate 1 at an interval, and an insulation film 4 is attached onto surface of the substrate 1, which is exposed between these regions, in such a manner as to cover the regions 2 and 3. As to the film 4 to be used at this time, since energy barrier is low, an Si3N4 film which is easy to be provided with an injection of carrier is to be selected. And then, the light-pervious floating electrode 5 of such a substance as tin oxide, indium oxide or the like on the film 4. In this mechanism, if the region 3 is kept on the reverse bias to such a state as immediately before occurrence of avalanche breakdown on a section 6 on a contacting interface between the substrate 1 and the region 3, and when light is radiated onto the electrode 5, an extremely fast responding speed can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54095842A JPS5928061B2 (en) | 1979-07-27 | 1979-07-27 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54095842A JPS5928061B2 (en) | 1979-07-27 | 1979-07-27 | Optical semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5621380A true JPS5621380A (en) | 1981-02-27 |
| JPS5928061B2 JPS5928061B2 (en) | 1984-07-10 |
Family
ID=14148622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54095842A Expired JPS5928061B2 (en) | 1979-07-27 | 1979-07-27 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5928061B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5812367A (en) * | 1981-07-16 | 1983-01-24 | Matsushita Electronics Corp | Semiconductor memory unit |
| JPH0535741U (en) * | 1991-10-15 | 1993-05-14 | 冨士シール工業株式会社 | Holder for container with collar |
-
1979
- 1979-07-27 JP JP54095842A patent/JPS5928061B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5812367A (en) * | 1981-07-16 | 1983-01-24 | Matsushita Electronics Corp | Semiconductor memory unit |
| JPH0535741U (en) * | 1991-10-15 | 1993-05-14 | 冨士シール工業株式会社 | Holder for container with collar |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5928061B2 (en) | 1984-07-10 |
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