JPS56110269A - P-n junction gate-type field effect transistor - Google Patents

P-n junction gate-type field effect transistor

Info

Publication number
JPS56110269A
JPS56110269A JP1151480A JP1151480A JPS56110269A JP S56110269 A JPS56110269 A JP S56110269A JP 1151480 A JP1151480 A JP 1151480A JP 1151480 A JP1151480 A JP 1151480A JP S56110269 A JPS56110269 A JP S56110269A
Authority
JP
Japan
Prior art keywords
type semiconductor
layer
action layer
substrate
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1151480A
Other languages
Japanese (ja)
Inventor
Kazuo Nagafune
Masamichi Omori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1151480A priority Critical patent/JPS56110269A/en
Publication of JPS56110269A publication Critical patent/JPS56110269A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a stable and highly reliable element containing an N type semiconductor action layer in a semi-insulation substrate with the surface of the N type semiconductor action layer protected by a semi-insulation substrate and not exposed outwardly. CONSTITUTION:An N type semiconductor action layer 12 is embedded in a substrate 11 and N type semiconductor layers 17, 18 are provided from a substrate surface 19 in such manner that they are connected to the N type semiconductor action layer 12. A P type semiconductor layer 13 is provided from the substrate surface 19 between a drain 17 and a source 18 in such way that they contact the N type semiconductor action layer 12. Then an ohmic electrode 14 is installed on the layer 13 to form a gate. It is arranged so that the N type semiconductor action layer 12 may be included in a semi-insulation substrate 11 by employing a technology such as ion injection, etc. Accordingly, the surface of the N type semiconductor action layer will never be contaminated.
JP1151480A 1980-02-04 1980-02-04 P-n junction gate-type field effect transistor Pending JPS56110269A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1151480A JPS56110269A (en) 1980-02-04 1980-02-04 P-n junction gate-type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1151480A JPS56110269A (en) 1980-02-04 1980-02-04 P-n junction gate-type field effect transistor

Publications (1)

Publication Number Publication Date
JPS56110269A true JPS56110269A (en) 1981-09-01

Family

ID=11780107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1151480A Pending JPS56110269A (en) 1980-02-04 1980-02-04 P-n junction gate-type field effect transistor

Country Status (1)

Country Link
JP (1) JPS56110269A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2653935A1 (en) * 1989-10-30 1991-05-03 Mitsubishi Electric Corp JUNCTION FIELD EFFECT TRANSISTOR HAVING A PLACED STRUCTURE AND MANUFACTURING METHOD.
US5242846A (en) * 1989-10-30 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a junction field effect transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5117676A (en) * 1974-08-05 1976-02-12 Nippon Electric Co SETSUGOGATADENKAIKOKATORANJISUTA
JPS5397784A (en) * 1977-02-07 1978-08-26 Hughes Aircraft Co Nonnactive gate gaaas fet transistor and method of producing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5117676A (en) * 1974-08-05 1976-02-12 Nippon Electric Co SETSUGOGATADENKAIKOKATORANJISUTA
JPS5397784A (en) * 1977-02-07 1978-08-26 Hughes Aircraft Co Nonnactive gate gaaas fet transistor and method of producing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2653935A1 (en) * 1989-10-30 1991-05-03 Mitsubishi Electric Corp JUNCTION FIELD EFFECT TRANSISTOR HAVING A PLACED STRUCTURE AND MANUFACTURING METHOD.
US5159414A (en) * 1989-10-30 1992-10-27 Mitsubishi Denki Kabushiki Kaisha Junction field effect transistor of a compound semiconductor
US5242846A (en) * 1989-10-30 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a junction field effect transistor

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