JPS5533385A - Image sensor - Google Patents

Image sensor

Info

Publication number
JPS5533385A
JPS5533385A JP10647278A JP10647278A JPS5533385A JP S5533385 A JPS5533385 A JP S5533385A JP 10647278 A JP10647278 A JP 10647278A JP 10647278 A JP10647278 A JP 10647278A JP S5533385 A JPS5533385 A JP S5533385A
Authority
JP
Japan
Prior art keywords
film
oxide film
refractive index
semiconductor substrate
charge amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10647278A
Other languages
Japanese (ja)
Other versions
JPS6147031B2 (en
Inventor
Akira Takei
Yoshihiko Higa
Takashi Mitsuida
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10647278A priority Critical patent/JPS5533385A/en
Publication of JPS5533385A publication Critical patent/JPS5533385A/en
Publication of JPS6147031B2 publication Critical patent/JPS6147031B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE: To enhance the wavelength characteristics as well as to increase the storage charge amount by forming the insulated film which features a higher conduc tivity than and an approximate refractive index to the oxide film along with application of the fixed potential onto the oxide film formed on the PN junction semiconductor substrate at the light reception part.
CONSTITUTION: Silicon oxide film 3 of a fixed thickness is formed at light reception part A' formed by PN junction part J on P-type semiconductor substrate 1, and an inslated film is formed on film 3 via silicon nitride film 8 featuring a fixed thickness. The end part of film 8 is connected to the opening end of light shield electrode 7 which covers over the surfaces of other CCD shift register parts B1 and B2. Then film 8 is turned to an insulated film which features a higher conductivity than film 3 along with an approximate refractive index and application of the fixed potential. And the reflection factor is decreased to the incident light at the interface between films 8 and 3 in order to decrease the attenuation of the incident light, thus enhancing the wavelength characteristics. Furthermore, the same function as the photo gate electrode is given to film 8 to increase the storage charge amount.
COPYRIGHT: (C)1980,JPO&Japio
JP10647278A 1978-08-31 1978-08-31 Image sensor Granted JPS5533385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10647278A JPS5533385A (en) 1978-08-31 1978-08-31 Image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10647278A JPS5533385A (en) 1978-08-31 1978-08-31 Image sensor

Publications (2)

Publication Number Publication Date
JPS5533385A true JPS5533385A (en) 1980-03-08
JPS6147031B2 JPS6147031B2 (en) 1986-10-17

Family

ID=14434458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10647278A Granted JPS5533385A (en) 1978-08-31 1978-08-31 Image sensor

Country Status (1)

Country Link
JP (1) JPS5533385A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5980966A (en) * 1982-09-21 1984-05-10 トムソン−セエスエフ Gate structure of integrated circuit containing gate-insulator-semiconductor element and method of producing integrated circuit using same structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0642926U (en) * 1992-11-24 1994-06-07 美代子 星野 Sun avoid baseball cap

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5980966A (en) * 1982-09-21 1984-05-10 トムソン−セエスエフ Gate structure of integrated circuit containing gate-insulator-semiconductor element and method of producing integrated circuit using same structure

Also Published As

Publication number Publication date
JPS6147031B2 (en) 1986-10-17

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