JPS5533385A - Image sensor - Google Patents
Image sensorInfo
- Publication number
- JPS5533385A JPS5533385A JP10647278A JP10647278A JPS5533385A JP S5533385 A JPS5533385 A JP S5533385A JP 10647278 A JP10647278 A JP 10647278A JP 10647278 A JP10647278 A JP 10647278A JP S5533385 A JPS5533385 A JP S5533385A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- refractive index
- semiconductor substrate
- charge amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE: To enhance the wavelength characteristics as well as to increase the storage charge amount by forming the insulated film which features a higher conduc tivity than and an approximate refractive index to the oxide film along with application of the fixed potential onto the oxide film formed on the PN junction semiconductor substrate at the light reception part.
CONSTITUTION: Silicon oxide film 3 of a fixed thickness is formed at light reception part A' formed by PN junction part J on P-type semiconductor substrate 1, and an inslated film is formed on film 3 via silicon nitride film 8 featuring a fixed thickness. The end part of film 8 is connected to the opening end of light shield electrode 7 which covers over the surfaces of other CCD shift register parts B1 and B2. Then film 8 is turned to an insulated film which features a higher conductivity than film 3 along with an approximate refractive index and application of the fixed potential. And the reflection factor is decreased to the incident light at the interface between films 8 and 3 in order to decrease the attenuation of the incident light, thus enhancing the wavelength characteristics. Furthermore, the same function as the photo gate electrode is given to film 8 to increase the storage charge amount.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10647278A JPS5533385A (en) | 1978-08-31 | 1978-08-31 | Image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10647278A JPS5533385A (en) | 1978-08-31 | 1978-08-31 | Image sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5533385A true JPS5533385A (en) | 1980-03-08 |
JPS6147031B2 JPS6147031B2 (en) | 1986-10-17 |
Family
ID=14434458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10647278A Granted JPS5533385A (en) | 1978-08-31 | 1978-08-31 | Image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5533385A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5980966A (en) * | 1982-09-21 | 1984-05-10 | トムソン−セエスエフ | Gate structure of integrated circuit containing gate-insulator-semiconductor element and method of producing integrated circuit using same structure |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0642926U (en) * | 1992-11-24 | 1994-06-07 | 美代子 星野 | Sun avoid baseball cap |
-
1978
- 1978-08-31 JP JP10647278A patent/JPS5533385A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5980966A (en) * | 1982-09-21 | 1984-05-10 | トムソン−セエスエフ | Gate structure of integrated circuit containing gate-insulator-semiconductor element and method of producing integrated circuit using same structure |
Also Published As
Publication number | Publication date |
---|---|
JPS6147031B2 (en) | 1986-10-17 |
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