JPS5563878A - Pressure-sensitive semiconductor device - Google Patents

Pressure-sensitive semiconductor device

Info

Publication number
JPS5563878A
JPS5563878A JP13750678A JP13750678A JPS5563878A JP S5563878 A JPS5563878 A JP S5563878A JP 13750678 A JP13750678 A JP 13750678A JP 13750678 A JP13750678 A JP 13750678A JP S5563878 A JPS5563878 A JP S5563878A
Authority
JP
Japan
Prior art keywords
layer
type
resistor
substrate
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13750678A
Other languages
Japanese (ja)
Inventor
Koji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13750678A priority Critical patent/JPS5563878A/en
Publication of JPS5563878A publication Critical patent/JPS5563878A/en
Pending legal-status Critical Current

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  • Pressure Sensors (AREA)

Abstract

PURPOSE: To enable optionally adjusting the pressure sensitivity, by providing a semiconductor substrate with a resistor layer which is sensitive to pressure and has an electroconductive type inverse to that of the substrate and by providing a sensitivity control electrode on a pn junction or a Schotkky barrier on the surface of the resistor layer.
CONSTITUTION: When a resistor layer which shows a piezoelectric resistance is a p-type semiconductor, the p-type resistor 12 is produced by diffusion so that the layer extends from the surface of an n-type semiconductor single crystal silicon substrate with a plane index of (110) or the like in parallel with the crystal direction (110) of the surface. An n-type layer 13 is produced on the surface of the p-type resistor layer 12 by diffusion. A control electrode 17 is provided on the n-type layer 13. The layer 13 may be replaced by a metal layer which makes a Schottky barrier in cooperation with the substrate. The extension of a depletion layer in the resistor layer varies with the change in a voltage applied to the control electrode 17. This results in providing sensitivity characteristics as shown in Fig. Therefore, the pressure sensitivity can be optionally adjusted by setting the control voltage at an appropriate level.
COPYRIGHT: (C)1980,JPO&Japio
JP13750678A 1978-11-08 1978-11-08 Pressure-sensitive semiconductor device Pending JPS5563878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13750678A JPS5563878A (en) 1978-11-08 1978-11-08 Pressure-sensitive semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13750678A JPS5563878A (en) 1978-11-08 1978-11-08 Pressure-sensitive semiconductor device

Publications (1)

Publication Number Publication Date
JPS5563878A true JPS5563878A (en) 1980-05-14

Family

ID=15200250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13750678A Pending JPS5563878A (en) 1978-11-08 1978-11-08 Pressure-sensitive semiconductor device

Country Status (1)

Country Link
JP (1) JPS5563878A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5528069A (en) * 1994-08-01 1996-06-18 Motorola, Inc. Sensing transducer using a Schottky junction and having an increased output signal voltage

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5528069A (en) * 1994-08-01 1996-06-18 Motorola, Inc. Sensing transducer using a Schottky junction and having an increased output signal voltage

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