JPS5563878A - Pressure-sensitive semiconductor device - Google Patents
Pressure-sensitive semiconductor deviceInfo
- Publication number
- JPS5563878A JPS5563878A JP13750678A JP13750678A JPS5563878A JP S5563878 A JPS5563878 A JP S5563878A JP 13750678 A JP13750678 A JP 13750678A JP 13750678 A JP13750678 A JP 13750678A JP S5563878 A JPS5563878 A JP S5563878A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- resistor
- substrate
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Pressure Sensors (AREA)
Abstract
PURPOSE: To enable optionally adjusting the pressure sensitivity, by providing a semiconductor substrate with a resistor layer which is sensitive to pressure and has an electroconductive type inverse to that of the substrate and by providing a sensitivity control electrode on a pn junction or a Schotkky barrier on the surface of the resistor layer.
CONSTITUTION: When a resistor layer which shows a piezoelectric resistance is a p-type semiconductor, the p-type resistor 12 is produced by diffusion so that the layer extends from the surface of an n-type semiconductor single crystal silicon substrate with a plane index of (110) or the like in parallel with the crystal direction (110) of the surface. An n-type layer 13 is produced on the surface of the p-type resistor layer 12 by diffusion. A control electrode 17 is provided on the n-type layer 13. The layer 13 may be replaced by a metal layer which makes a Schottky barrier in cooperation with the substrate. The extension of a depletion layer in the resistor layer varies with the change in a voltage applied to the control electrode 17. This results in providing sensitivity characteristics as shown in Fig. Therefore, the pressure sensitivity can be optionally adjusted by setting the control voltage at an appropriate level.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13750678A JPS5563878A (en) | 1978-11-08 | 1978-11-08 | Pressure-sensitive semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13750678A JPS5563878A (en) | 1978-11-08 | 1978-11-08 | Pressure-sensitive semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5563878A true JPS5563878A (en) | 1980-05-14 |
Family
ID=15200250
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13750678A Pending JPS5563878A (en) | 1978-11-08 | 1978-11-08 | Pressure-sensitive semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5563878A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5528069A (en) * | 1994-08-01 | 1996-06-18 | Motorola, Inc. | Sensing transducer using a Schottky junction and having an increased output signal voltage |
-
1978
- 1978-11-08 JP JP13750678A patent/JPS5563878A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5528069A (en) * | 1994-08-01 | 1996-06-18 | Motorola, Inc. | Sensing transducer using a Schottky junction and having an increased output signal voltage |
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