JPS54146987A - Semiconductor device for light detection - Google Patents

Semiconductor device for light detection

Info

Publication number
JPS54146987A
JPS54146987A JP5575878A JP5575878A JPS54146987A JP S54146987 A JPS54146987 A JP S54146987A JP 5575878 A JP5575878 A JP 5575878A JP 5575878 A JP5575878 A JP 5575878A JP S54146987 A JPS54146987 A JP S54146987A
Authority
JP
Japan
Prior art keywords
leakage light
light
leakage
semiconductor device
prevent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5575878A
Other languages
Japanese (ja)
Inventor
Hiroshi Sakai
Osamu Otsuki
Terunobu Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5575878A priority Critical patent/JPS54146987A/en
Publication of JPS54146987A publication Critical patent/JPS54146987A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To improve S/N by preventing a leakage light to prevent the noise output dependent upon the leakage light by providing a light shielding film in a leakage light incident part through an insulating film. CONSTITUTION:Electrode 5 having prescribed light receiving window 6 is formed on the diode where P-type diffusion layer 2 is formed on N-type Si substrate 1, and is separated for every diode near the charge dam forming part upper face between diodes. Here, light shielding film 11 is provided in the leakage light incident part through insulating film 10. As a result, the leakage light is prevented to prevent the noise output dependent upon the leakage light, so that S/N can be improved.
JP5575878A 1978-05-10 1978-05-10 Semiconductor device for light detection Pending JPS54146987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5575878A JPS54146987A (en) 1978-05-10 1978-05-10 Semiconductor device for light detection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5575878A JPS54146987A (en) 1978-05-10 1978-05-10 Semiconductor device for light detection

Publications (1)

Publication Number Publication Date
JPS54146987A true JPS54146987A (en) 1979-11-16

Family

ID=13007735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5575878A Pending JPS54146987A (en) 1978-05-10 1978-05-10 Semiconductor device for light detection

Country Status (1)

Country Link
JP (1) JPS54146987A (en)

Similar Documents

Publication Publication Date Title
ATE59116T1 (en) MULTIPLE JUNCTION SEMICONDUCTOR ARRANGEMENTS.
JPS5495116A (en) Solid image pickup unit
JPS54101688A (en) Optical semiconductor device
JPS538572A (en) Field effect type transistor
JPS54146987A (en) Semiconductor device for light detection
JPS5417682A (en) Semiconductor and its manufacture
JPS5687380A (en) Semiconductor device for detection of radiant light
JPS5477088A (en) Semiconductor photo detector
JPS55124262A (en) Bidirectional thyristor
JPS55102280A (en) Infrared charge transfer device
JPS5513990A (en) Semiconductor device
JPS5460881A (en) Optical action type semiconductor device
JPS52124888A (en) Production of solar battery
JPS57193073A (en) Semiconductor radioactive ray detector
JPS5538080A (en) Semiconductor device
JPS51138185A (en) Semi-conductor device
JPS54141578A (en) Semiconductor device
JPS56165370A (en) Planar type semiconductor photoelectric converting element
JPS57183065A (en) Semiconductor integrated circuit device
JPS51120670A (en) Semiconductor device
JPS5736876A (en) Semiconductor photodetector
JPS5563879A (en) Semiconductor device
GB929240A (en) Improvements in or relating to photo-sensitive semi-conductor devices
JPS56155576A (en) Light-detecting element
JPS5621380A (en) Photosemiconductor device