JPS54146987A - Semiconductor device for light detection - Google Patents
Semiconductor device for light detectionInfo
- Publication number
- JPS54146987A JPS54146987A JP5575878A JP5575878A JPS54146987A JP S54146987 A JPS54146987 A JP S54146987A JP 5575878 A JP5575878 A JP 5575878A JP 5575878 A JP5575878 A JP 5575878A JP S54146987 A JPS54146987 A JP S54146987A
- Authority
- JP
- Japan
- Prior art keywords
- leakage light
- light
- leakage
- semiconductor device
- prevent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 230000001419 dependent effect Effects 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To improve S/N by preventing a leakage light to prevent the noise output dependent upon the leakage light by providing a light shielding film in a leakage light incident part through an insulating film. CONSTITUTION:Electrode 5 having prescribed light receiving window 6 is formed on the diode where P-type diffusion layer 2 is formed on N-type Si substrate 1, and is separated for every diode near the charge dam forming part upper face between diodes. Here, light shielding film 11 is provided in the leakage light incident part through insulating film 10. As a result, the leakage light is prevented to prevent the noise output dependent upon the leakage light, so that S/N can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5575878A JPS54146987A (en) | 1978-05-10 | 1978-05-10 | Semiconductor device for light detection |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5575878A JPS54146987A (en) | 1978-05-10 | 1978-05-10 | Semiconductor device for light detection |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54146987A true JPS54146987A (en) | 1979-11-16 |
Family
ID=13007735
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5575878A Pending JPS54146987A (en) | 1978-05-10 | 1978-05-10 | Semiconductor device for light detection |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54146987A (en) |
-
1978
- 1978-05-10 JP JP5575878A patent/JPS54146987A/en active Pending
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