JPS55162263A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55162263A
JPS55162263A JP6964979A JP6964979A JPS55162263A JP S55162263 A JPS55162263 A JP S55162263A JP 6964979 A JP6964979 A JP 6964979A JP 6964979 A JP6964979 A JP 6964979A JP S55162263 A JPS55162263 A JP S55162263A
Authority
JP
Japan
Prior art keywords
depression
edge part
junction
high voltage
reverse bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6964979A
Other languages
Japanese (ja)
Inventor
Kazuhisa Takahashi
Saburo Takamiya
Makoto Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6964979A priority Critical patent/JPS55162263A/en
Publication of JPS55162263A publication Critical patent/JPS55162263A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a high voltage resistance device by the method wherein a PN-junction to which a reverse bias is to be applied is formed along the inner wall of a depression formed on a semiconductor substrate, and the breakdown voltage in the surrounding part is raised. CONSTITUTION:After a depression is formed on N<+>-type InP substrate 21 by mesa- etching, P-type InGaAsP active layer 22 and P<+>-type InP layer 23 are epitaxially formed. Then, the edge part of the bottom of the depression is made thick. Next, by lapping the upper surface, the exposed part of the PN-junction is covered with SiO2 film 25. By this structure, a depletion layer expands inwardly in the vertical direction on the inner wall of the depression at the time when a reverse bias is applied. In the edge part of the bottom, it expands wider than in the center part. Consequently, the breakdown voltate becomes higher in the edge part of the bottom, so that it is possible to obtain a device of high voltage resistance easily.
JP6964979A 1979-06-01 1979-06-01 Semiconductor device Pending JPS55162263A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6964979A JPS55162263A (en) 1979-06-01 1979-06-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6964979A JPS55162263A (en) 1979-06-01 1979-06-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55162263A true JPS55162263A (en) 1980-12-17

Family

ID=13408895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6964979A Pending JPS55162263A (en) 1979-06-01 1979-06-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55162263A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57190369A (en) * 1981-05-19 1982-11-22 Nec Corp Photo detector
JPS57197878A (en) * 1981-05-29 1982-12-04 Nec Corp Photodetector
JPS57197877A (en) * 1981-05-29 1982-12-04 Nec Corp Photo detector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57190369A (en) * 1981-05-19 1982-11-22 Nec Corp Photo detector
JPS57197878A (en) * 1981-05-29 1982-12-04 Nec Corp Photodetector
JPS57197877A (en) * 1981-05-29 1982-12-04 Nec Corp Photo detector

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