JPS56161832A - Gaseous phase treatment device - Google Patents
Gaseous phase treatment deviceInfo
- Publication number
- JPS56161832A JPS56161832A JP6200780A JP6200780A JPS56161832A JP S56161832 A JPS56161832 A JP S56161832A JP 6200780 A JP6200780 A JP 6200780A JP 6200780 A JP6200780 A JP 6200780A JP S56161832 A JPS56161832 A JP S56161832A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gaseous phase
- container
- silicon
- silicon wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE: To obtain a gaseous phase treatment device which is excellent in the productivity of silicon wafer, the uniformity of its thickness, and reliability by using a system in which reactant gases are controllably supplied with a carrier gas into a container.
CONSTITUTION: A silicon wafer 7 is placed on a silicon suspector 8, H2 gas displacement is made, and a certain reduced pressure condition is kept while keeping the flow rate of H2 from a nozzle 10 at a fixed value. Then, infrared lamps 2A and 2B are energized to heat them to a given temperature and silane, together with impurities, e.g., PH3, etc., and H2 gas, is introduced into a reactor container 1 through the nozzle 10 for the epitaxial gaseous phase growth of silicon, during which reactant gas 9 is controlled by sequence program for an air-operated valve so as to control the thickwise distribution of silicon film at a right angle to the flow of the reactant gas 9 in the container 1. Also, N2 gas is introduced to a space 13 outside quartz maing windows 3 and 4 and H2 gas is introduced to an inside space 12. After the completion of the epitaxial gaseous phase growth, the infrared lamps are turned off for cooling them. Then, the pressure of the container 1 is restored to ordinary pressure, N2 gas displacement is made, and the silicon wafer 7 is taken out.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6200780A JPS56161832A (en) | 1980-05-10 | 1980-05-10 | Gaseous phase treatment device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6200780A JPS56161832A (en) | 1980-05-10 | 1980-05-10 | Gaseous phase treatment device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56161832A true JPS56161832A (en) | 1981-12-12 |
Family
ID=13187660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6200780A Pending JPS56161832A (en) | 1980-05-10 | 1980-05-10 | Gaseous phase treatment device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56161832A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6024377A (en) * | 1983-07-21 | 1985-02-07 | Canon Inc | Method and device for producing deposited film |
JPS6034011A (en) * | 1983-08-05 | 1985-02-21 | Agency Of Ind Science & Technol | Reaction tube |
JPS60106335U (en) * | 1983-12-24 | 1985-07-19 | 株式会社島津製作所 | Plasma CVD equipment |
JPH01201482A (en) * | 1987-10-01 | 1989-08-14 | Nippon Aneruba Kk | Vacuum vapor growth device |
-
1980
- 1980-05-10 JP JP6200780A patent/JPS56161832A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6024377A (en) * | 1983-07-21 | 1985-02-07 | Canon Inc | Method and device for producing deposited film |
JPS6034011A (en) * | 1983-08-05 | 1985-02-21 | Agency Of Ind Science & Technol | Reaction tube |
JPS60106335U (en) * | 1983-12-24 | 1985-07-19 | 株式会社島津製作所 | Plasma CVD equipment |
JPH01201482A (en) * | 1987-10-01 | 1989-08-14 | Nippon Aneruba Kk | Vacuum vapor growth device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5151296A (en) | Method for forming polycrystalline film by chemical vapor deposition process | |
JPS5772318A (en) | Vapor growth method | |
JPS5748226A (en) | Plasma processing method and device for the same | |
JPS56161832A (en) | Gaseous phase treatment device | |
JPS5694751A (en) | Vapor growth method | |
JPS5513922A (en) | Vapor phase growthing method and its device | |
JPS5524424A (en) | Forming device of pressure-reduced epitaxial layer | |
JPS5713746A (en) | Vapor-phase growing apparatus | |
JPS5678497A (en) | Vapor growth apparatus | |
JPS54106081A (en) | Growth method in vapor phase | |
JPS558003A (en) | Gaseous growth method and vertical type gaseous growth device | |
JPH0245916A (en) | Vapor phase growth device | |
JPH047847A (en) | Vapor growth equipment | |
JPS5681924A (en) | Susceptor for vertical type high frequency heating vapor phase growing system | |
JPS6441212A (en) | Semiconductor crystal growth method | |
JPS5571618A (en) | Oxide film forming device | |
JPS5524413A (en) | Process of epitaxial growth for semiconductor | |
JPS57191294A (en) | Automatic epitaxial device of liquid phase | |
JPS5632400A (en) | Vapor phase growing method for gallium phosphide layer | |
JPS639742B2 (en) | ||
JPS62106617A (en) | Vapor growth method of gaas | |
JPS5518024A (en) | Vapor phase reactor | |
JPH04350168A (en) | Improving method for durability of o-ring in reduced pressure chemical vapor deposition device | |
JPS56120600A (en) | Vapor phase growing method | |
JPS57183020A (en) | Formation of semiconductor layer |