JPS5524424A - Forming device of pressure-reduced epitaxial layer - Google Patents
Forming device of pressure-reduced epitaxial layerInfo
- Publication number
- JPS5524424A JPS5524424A JP9681578A JP9681578A JPS5524424A JP S5524424 A JPS5524424 A JP S5524424A JP 9681578 A JP9681578 A JP 9681578A JP 9681578 A JP9681578 A JP 9681578A JP S5524424 A JPS5524424 A JP S5524424A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- substrate
- nozzle
- epitaxial growth
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To increase the velocity of epitaxial growth on substrate by extending a nozzle of multiple-tube construction to the neighborhood of a substrate to treat, allowing a reaction gas to flow in the inside tube and a fluid to cool down the reation gas to flow in the outside tube.
CONSTITUTION: A nozzle 4 is of multiple-tube construction comprising an inside tube 4a and an outside tube 4b; the outside tube is about 10 mm longer and inserted in a reaction tube 1 in parallel with its axis. After heating to epitaxial growth temperature the reaction tube is exhausted internally, H2 gas is introduced 6 therein as kept at a given pressure, then after the nozzle is colled down SiH4 is injected 5 as kept at a given pressure and introduced near substrate 3. During the epitaxial growth, SiH4 is colled down by carrier H2 released successively and introduced near the substrate through nozzle 4 as controlled for themal decomposition on its way from inlet 5 to the substrate 3. An efficiency of the reaction gas for thermal decomposition is therefore high on the substrate, and the epitaxial growth is accelerated so fast to leave an epitaxial layer of excellent crystallinity.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9681578A JPS5524424A (en) | 1978-08-09 | 1978-08-09 | Forming device of pressure-reduced epitaxial layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9681578A JPS5524424A (en) | 1978-08-09 | 1978-08-09 | Forming device of pressure-reduced epitaxial layer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5524424A true JPS5524424A (en) | 1980-02-21 |
Family
ID=14175076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9681578A Pending JPS5524424A (en) | 1978-08-09 | 1978-08-09 | Forming device of pressure-reduced epitaxial layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5524424A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6079734U (en) * | 1983-11-04 | 1985-06-03 | 東芝機械株式会社 | Gas ejection nozzle in vapor phase growth equipment |
JPS6168393A (en) * | 1984-09-11 | 1986-04-08 | Touyoko Kagaku Kk | Hot wall type epitaxial growth device |
JPS61196538A (en) * | 1985-02-27 | 1986-08-30 | Hitachi Ltd | Vacuum processing and apparatus thereof |
JPS6258639A (en) * | 1985-05-17 | 1987-03-14 | マイテル・コ−ポレ−シヨン | Chemical evaporating apparatus and method |
JPS62128910A (en) * | 1985-11-26 | 1987-06-11 | Mitsui Toatsu Chem Inc | Apparatus for producing composition containing carbon |
JP2004510324A (en) * | 2000-09-22 | 2004-04-02 | アイクストロン、アーゲー | Gas suction element and apparatus for CVD processing |
JP2008244443A (en) * | 2007-02-28 | 2008-10-09 | Hitachi Kokusai Electric Inc | Substrate processing apparatus and method for manufacturing semiconductor device |
JP4897184B2 (en) * | 2000-09-22 | 2012-03-14 | アイクストロン、アーゲー | Deposition method and deposition apparatus for depositing a crystal structure layer |
-
1978
- 1978-08-09 JP JP9681578A patent/JPS5524424A/en active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6079734U (en) * | 1983-11-04 | 1985-06-03 | 東芝機械株式会社 | Gas ejection nozzle in vapor phase growth equipment |
JPH0513003Y2 (en) * | 1983-11-04 | 1993-04-06 | ||
JPS6168393A (en) * | 1984-09-11 | 1986-04-08 | Touyoko Kagaku Kk | Hot wall type epitaxial growth device |
JPS61196538A (en) * | 1985-02-27 | 1986-08-30 | Hitachi Ltd | Vacuum processing and apparatus thereof |
JPH0476492B2 (en) * | 1985-02-27 | 1992-12-03 | Hitachi Ltd | |
JPS6258639A (en) * | 1985-05-17 | 1987-03-14 | マイテル・コ−ポレ−シヨン | Chemical evaporating apparatus and method |
JPH0728963U (en) * | 1985-05-17 | 1995-05-30 | マイテル・コーポレーション | Chemical vapor deposition equipment |
JPS62128910A (en) * | 1985-11-26 | 1987-06-11 | Mitsui Toatsu Chem Inc | Apparatus for producing composition containing carbon |
JPH0313164B2 (en) * | 1985-11-26 | 1991-02-21 | Mitsui Toatsu Chemicals | |
JP2004510324A (en) * | 2000-09-22 | 2004-04-02 | アイクストロン、アーゲー | Gas suction element and apparatus for CVD processing |
JP4897184B2 (en) * | 2000-09-22 | 2012-03-14 | アイクストロン、アーゲー | Deposition method and deposition apparatus for depositing a crystal structure layer |
JP2008244443A (en) * | 2007-02-28 | 2008-10-09 | Hitachi Kokusai Electric Inc | Substrate processing apparatus and method for manufacturing semiconductor device |
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