JPS5524424A - Forming device of pressure-reduced epitaxial layer - Google Patents

Forming device of pressure-reduced epitaxial layer

Info

Publication number
JPS5524424A
JPS5524424A JP9681578A JP9681578A JPS5524424A JP S5524424 A JPS5524424 A JP S5524424A JP 9681578 A JP9681578 A JP 9681578A JP 9681578 A JP9681578 A JP 9681578A JP S5524424 A JPS5524424 A JP S5524424A
Authority
JP
Japan
Prior art keywords
tube
substrate
nozzle
epitaxial growth
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9681578A
Other languages
Japanese (ja)
Inventor
Yoshihide Endo
Junichi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP9681578A priority Critical patent/JPS5524424A/en
Publication of JPS5524424A publication Critical patent/JPS5524424A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To increase the velocity of epitaxial growth on substrate by extending a nozzle of multiple-tube construction to the neighborhood of a substrate to treat, allowing a reaction gas to flow in the inside tube and a fluid to cool down the reation gas to flow in the outside tube.
CONSTITUTION: A nozzle 4 is of multiple-tube construction comprising an inside tube 4a and an outside tube 4b; the outside tube is about 10 mm longer and inserted in a reaction tube 1 in parallel with its axis. After heating to epitaxial growth temperature the reaction tube is exhausted internally, H2 gas is introduced 6 therein as kept at a given pressure, then after the nozzle is colled down SiH4 is injected 5 as kept at a given pressure and introduced near substrate 3. During the epitaxial growth, SiH4 is colled down by carrier H2 released successively and introduced near the substrate through nozzle 4 as controlled for themal decomposition on its way from inlet 5 to the substrate 3. An efficiency of the reaction gas for thermal decomposition is therefore high on the substrate, and the epitaxial growth is accelerated so fast to leave an epitaxial layer of excellent crystallinity.
COPYRIGHT: (C)1980,JPO&Japio
JP9681578A 1978-08-09 1978-08-09 Forming device of pressure-reduced epitaxial layer Pending JPS5524424A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9681578A JPS5524424A (en) 1978-08-09 1978-08-09 Forming device of pressure-reduced epitaxial layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9681578A JPS5524424A (en) 1978-08-09 1978-08-09 Forming device of pressure-reduced epitaxial layer

Publications (1)

Publication Number Publication Date
JPS5524424A true JPS5524424A (en) 1980-02-21

Family

ID=14175076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9681578A Pending JPS5524424A (en) 1978-08-09 1978-08-09 Forming device of pressure-reduced epitaxial layer

Country Status (1)

Country Link
JP (1) JPS5524424A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6079734U (en) * 1983-11-04 1985-06-03 東芝機械株式会社 Gas ejection nozzle in vapor phase growth equipment
JPS6168393A (en) * 1984-09-11 1986-04-08 Touyoko Kagaku Kk Hot wall type epitaxial growth device
JPS61196538A (en) * 1985-02-27 1986-08-30 Hitachi Ltd Vacuum processing and apparatus thereof
JPS6258639A (en) * 1985-05-17 1987-03-14 マイテル・コ−ポレ−シヨン Chemical evaporating apparatus and method
JPS62128910A (en) * 1985-11-26 1987-06-11 Mitsui Toatsu Chem Inc Apparatus for producing composition containing carbon
JP2004510324A (en) * 2000-09-22 2004-04-02 アイクストロン、アーゲー Gas suction element and apparatus for CVD processing
JP2008244443A (en) * 2007-02-28 2008-10-09 Hitachi Kokusai Electric Inc Substrate processing apparatus and method for manufacturing semiconductor device
JP4897184B2 (en) * 2000-09-22 2012-03-14 アイクストロン、アーゲー Deposition method and deposition apparatus for depositing a crystal structure layer

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6079734U (en) * 1983-11-04 1985-06-03 東芝機械株式会社 Gas ejection nozzle in vapor phase growth equipment
JPH0513003Y2 (en) * 1983-11-04 1993-04-06
JPS6168393A (en) * 1984-09-11 1986-04-08 Touyoko Kagaku Kk Hot wall type epitaxial growth device
JPS61196538A (en) * 1985-02-27 1986-08-30 Hitachi Ltd Vacuum processing and apparatus thereof
JPH0476492B2 (en) * 1985-02-27 1992-12-03 Hitachi Ltd
JPS6258639A (en) * 1985-05-17 1987-03-14 マイテル・コ−ポレ−シヨン Chemical evaporating apparatus and method
JPH0728963U (en) * 1985-05-17 1995-05-30 マイテル・コーポレーション Chemical vapor deposition equipment
JPS62128910A (en) * 1985-11-26 1987-06-11 Mitsui Toatsu Chem Inc Apparatus for producing composition containing carbon
JPH0313164B2 (en) * 1985-11-26 1991-02-21 Mitsui Toatsu Chemicals
JP2004510324A (en) * 2000-09-22 2004-04-02 アイクストロン、アーゲー Gas suction element and apparatus for CVD processing
JP4897184B2 (en) * 2000-09-22 2012-03-14 アイクストロン、アーゲー Deposition method and deposition apparatus for depositing a crystal structure layer
JP2008244443A (en) * 2007-02-28 2008-10-09 Hitachi Kokusai Electric Inc Substrate processing apparatus and method for manufacturing semiconductor device

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