JPS5748226A - Plasma processing method and device for the same - Google Patents
Plasma processing method and device for the sameInfo
- Publication number
- JPS5748226A JPS5748226A JP12370980A JP12370980A JPS5748226A JP S5748226 A JPS5748226 A JP S5748226A JP 12370980 A JP12370980 A JP 12370980A JP 12370980 A JP12370980 A JP 12370980A JP S5748226 A JPS5748226 A JP S5748226A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- plasma processing
- plasma
- flow
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To improve the uniformity of processing, by a method wherein plasma processing is performed by adjusting a flow of gas by a controlling piece provided in a supply route of the gas. CONSTITUTION:Reactive gas in bombs 20-22, through flow measuring and controlling equipments 23-25, is introduced into a reaction chamber 4 in which a suscepter 3 on which a wafer 2 is mounted is contained. The flow of the introduced gas is adjusted by a gas controlling piece 7 and plasma processing such as plasma deposition, plasma etching and so forth is performed. With above method the plasma processing is performed uniformly, so that the uniformity of the thickness of the film is improved and yield of production is also enhanced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12370980A JPS5748226A (en) | 1980-09-05 | 1980-09-05 | Plasma processing method and device for the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12370980A JPS5748226A (en) | 1980-09-05 | 1980-09-05 | Plasma processing method and device for the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5748226A true JPS5748226A (en) | 1982-03-19 |
Family
ID=14867403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12370980A Pending JPS5748226A (en) | 1980-09-05 | 1980-09-05 | Plasma processing method and device for the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5748226A (en) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0066088A2 (en) * | 1981-06-02 | 1982-12-08 | International Business Machines Corporation | Perforated anode for use in reactive ion etching apparatus |
JPS6071137U (en) * | 1983-10-19 | 1985-05-20 | 富士通株式会社 | Plasma CVD equipment |
JPS6098629A (en) * | 1983-11-02 | 1985-06-01 | Hitachi Ltd | Treating equipment |
JPS6099974U (en) * | 1983-12-13 | 1985-07-08 | 遠藤 勇 | snow surfing |
JPS61192446U (en) * | 1985-05-22 | 1986-11-29 | ||
US4718976A (en) * | 1982-03-31 | 1988-01-12 | Fujitsu Limited | Process and apparatus for plasma treatment |
JPS6367241U (en) * | 1986-10-21 | 1988-05-06 | ||
JPH0195974U (en) * | 1987-12-16 | 1989-06-26 | ||
JPH0195975U (en) * | 1987-12-16 | 1989-06-26 | ||
JPH01185277A (en) * | 1988-01-21 | 1989-07-24 | Kuniaki Kawahara | Surfski-board |
US5186756A (en) * | 1990-01-29 | 1993-02-16 | At&T Bell Laboratories | MOCVD method and apparatus |
US5188671A (en) * | 1990-08-08 | 1993-02-23 | Hughes Aircraft Company | Multichannel plate assembly for gas source molecular beam epitaxy |
US5240505A (en) * | 1989-08-03 | 1993-08-31 | Mitsubishi Denki Kabushiki Kaisha | Method of an apparatus for forming thin film for semiconductor device |
US5288327A (en) * | 1992-03-12 | 1994-02-22 | Bell Communications Research, Inc. | Deflected flow in chemical vapor deposition cell |
US5366557A (en) * | 1990-06-18 | 1994-11-22 | At&T Bell Laboratories | Method and apparatus for forming integrated circuit layers |
EP0653500A1 (en) * | 1993-11-12 | 1995-05-17 | International Business Machines Corporation | CVD reactor for improved film thickness uniformity deposition |
US5653806A (en) * | 1995-03-10 | 1997-08-05 | Advanced Technology Materials, Inc. | Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same |
US5741363A (en) * | 1996-03-22 | 1998-04-21 | Advanced Technology Materials, Inc. | Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition |
KR100353210B1 (en) * | 1997-02-06 | 2002-10-19 | 지멘스 악티엔게젤샤프트 | Process for layer production on a surface |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5046074A (en) * | 1973-08-28 | 1975-04-24 | ||
JPS54158190A (en) * | 1978-06-05 | 1979-12-13 | Yamazaki Shunpei | Semiconductor device and method of fabricating same |
-
1980
- 1980-09-05 JP JP12370980A patent/JPS5748226A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5046074A (en) * | 1973-08-28 | 1975-04-24 | ||
JPS54158190A (en) * | 1978-06-05 | 1979-12-13 | Yamazaki Shunpei | Semiconductor device and method of fabricating same |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0066088A2 (en) * | 1981-06-02 | 1982-12-08 | International Business Machines Corporation | Perforated anode for use in reactive ion etching apparatus |
US4718976A (en) * | 1982-03-31 | 1988-01-12 | Fujitsu Limited | Process and apparatus for plasma treatment |
JPS6071137U (en) * | 1983-10-19 | 1985-05-20 | 富士通株式会社 | Plasma CVD equipment |
JPS6098629A (en) * | 1983-11-02 | 1985-06-01 | Hitachi Ltd | Treating equipment |
JPH0568850B2 (en) * | 1983-11-02 | 1993-09-29 | Hitachi Ltd | |
JPS6099974U (en) * | 1983-12-13 | 1985-07-08 | 遠藤 勇 | snow surfing |
JPH051071Y2 (en) * | 1985-05-22 | 1993-01-12 | ||
JPS61192446U (en) * | 1985-05-22 | 1986-11-29 | ||
JPS6367241U (en) * | 1986-10-21 | 1988-05-06 | ||
JPH0195974U (en) * | 1987-12-16 | 1989-06-26 | ||
JPH0195975U (en) * | 1987-12-16 | 1989-06-26 | ||
JPH01185277A (en) * | 1988-01-21 | 1989-07-24 | Kuniaki Kawahara | Surfski-board |
US5240505A (en) * | 1989-08-03 | 1993-08-31 | Mitsubishi Denki Kabushiki Kaisha | Method of an apparatus for forming thin film for semiconductor device |
US5429991A (en) * | 1989-08-03 | 1995-07-04 | Mitsubishi Denki Kabushiki Kaisha | Method of forming thin film for semiconductor device |
US5186756A (en) * | 1990-01-29 | 1993-02-16 | At&T Bell Laboratories | MOCVD method and apparatus |
US5366557A (en) * | 1990-06-18 | 1994-11-22 | At&T Bell Laboratories | Method and apparatus for forming integrated circuit layers |
US5188671A (en) * | 1990-08-08 | 1993-02-23 | Hughes Aircraft Company | Multichannel plate assembly for gas source molecular beam epitaxy |
US5288327A (en) * | 1992-03-12 | 1994-02-22 | Bell Communications Research, Inc. | Deflected flow in chemical vapor deposition cell |
EP0653500A1 (en) * | 1993-11-12 | 1995-05-17 | International Business Machines Corporation | CVD reactor for improved film thickness uniformity deposition |
US5653806A (en) * | 1995-03-10 | 1997-08-05 | Advanced Technology Materials, Inc. | Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same |
US5741363A (en) * | 1996-03-22 | 1998-04-21 | Advanced Technology Materials, Inc. | Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition |
KR100353210B1 (en) * | 1997-02-06 | 2002-10-19 | 지멘스 악티엔게젤샤프트 | Process for layer production on a surface |
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