JPS56120600A - Vapor phase growing method - Google Patents
Vapor phase growing methodInfo
- Publication number
- JPS56120600A JPS56120600A JP2050080A JP2050080A JPS56120600A JP S56120600 A JPS56120600 A JP S56120600A JP 2050080 A JP2050080 A JP 2050080A JP 2050080 A JP2050080 A JP 2050080A JP S56120600 A JPS56120600 A JP S56120600A
- Authority
- JP
- Japan
- Prior art keywords
- halide
- substrate
- litao
- tubes
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Waveguides (AREA)
Abstract
PURPOSE: To epitaxially grow a thin film of LiNbO3-LiTaO3 material on a substrate in a vapor phase at a relatively low temp. by reacting Nb halide and/or Ta halide with Li halide in the presence of steam.
CONSTITUTION: LiTaO3 single crystal substrate 5 mounted on support stand 4 is set at a predetermined position of quartz reaction tube 1 placed in an electric furnace, and Nb halide and/or Ta halide source 6 and Li halide source 7 connecting with quartz small tubes 2, 3, respectively are arranged at the lower temp. part of tube 1. After substituting Ar for air in tubes 1, 2, 3, the temp. is raised while feeding Ar into tubes 1, 2, 3 to heat substrate 5 to 450W720°C. Ar passed through a hot water bubbler is then fed into tube 1, and simultaneously Ar supporting halide vapor is fed from sources 6, 7 to cause reaction. Thus, a thin film of LiNbO3- LiTaO3 material is epitaxially grown on substrate 5.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2050080A JPS56120600A (en) | 1980-02-22 | 1980-02-22 | Vapor phase growing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2050080A JPS56120600A (en) | 1980-02-22 | 1980-02-22 | Vapor phase growing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56120600A true JPS56120600A (en) | 1981-09-21 |
Family
ID=12028874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2050080A Pending JPS56120600A (en) | 1980-02-22 | 1980-02-22 | Vapor phase growing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56120600A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4439265A (en) * | 1981-07-17 | 1984-03-27 | Bell Telephone Laboratories, Incorporated | Fabrication method for LiNbO3 and LiTaO3 integrated optics devices |
JPS59501045A (en) * | 1982-06-02 | 1984-06-21 | ソシエテ、ナショナル、エルフ、アキテ−ヌ | Novel cloning/expression vector, yeast transformed with this vector, and its applications |
-
1980
- 1980-02-22 JP JP2050080A patent/JPS56120600A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4439265A (en) * | 1981-07-17 | 1984-03-27 | Bell Telephone Laboratories, Incorporated | Fabrication method for LiNbO3 and LiTaO3 integrated optics devices |
JPS59501045A (en) * | 1982-06-02 | 1984-06-21 | ソシエテ、ナショナル、エルフ、アキテ−ヌ | Novel cloning/expression vector, yeast transformed with this vector, and its applications |
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