JPS56120600A - Vapor phase growing method - Google Patents

Vapor phase growing method

Info

Publication number
JPS56120600A
JPS56120600A JP2050080A JP2050080A JPS56120600A JP S56120600 A JPS56120600 A JP S56120600A JP 2050080 A JP2050080 A JP 2050080A JP 2050080 A JP2050080 A JP 2050080A JP S56120600 A JPS56120600 A JP S56120600A
Authority
JP
Japan
Prior art keywords
halide
substrate
litao
tubes
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2050080A
Other languages
Japanese (ja)
Inventor
Hiroyuki Kasano
Yoshio Furuhata
Koichi Megumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2050080A priority Critical patent/JPS56120600A/en
Publication of JPS56120600A publication Critical patent/JPS56120600A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Waveguides (AREA)

Abstract

PURPOSE: To epitaxially grow a thin film of LiNbO3-LiTaO3 material on a substrate in a vapor phase at a relatively low temp. by reacting Nb halide and/or Ta halide with Li halide in the presence of steam.
CONSTITUTION: LiTaO3 single crystal substrate 5 mounted on support stand 4 is set at a predetermined position of quartz reaction tube 1 placed in an electric furnace, and Nb halide and/or Ta halide source 6 and Li halide source 7 connecting with quartz small tubes 2, 3, respectively are arranged at the lower temp. part of tube 1. After substituting Ar for air in tubes 1, 2, 3, the temp. is raised while feeding Ar into tubes 1, 2, 3 to heat substrate 5 to 450W720°C. Ar passed through a hot water bubbler is then fed into tube 1, and simultaneously Ar supporting halide vapor is fed from sources 6, 7 to cause reaction. Thus, a thin film of LiNbO3- LiTaO3 material is epitaxially grown on substrate 5.
COPYRIGHT: (C)1981,JPO&Japio
JP2050080A 1980-02-22 1980-02-22 Vapor phase growing method Pending JPS56120600A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2050080A JPS56120600A (en) 1980-02-22 1980-02-22 Vapor phase growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2050080A JPS56120600A (en) 1980-02-22 1980-02-22 Vapor phase growing method

Publications (1)

Publication Number Publication Date
JPS56120600A true JPS56120600A (en) 1981-09-21

Family

ID=12028874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2050080A Pending JPS56120600A (en) 1980-02-22 1980-02-22 Vapor phase growing method

Country Status (1)

Country Link
JP (1) JPS56120600A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4439265A (en) * 1981-07-17 1984-03-27 Bell Telephone Laboratories, Incorporated Fabrication method for LiNbO3 and LiTaO3 integrated optics devices
JPS59501045A (en) * 1982-06-02 1984-06-21 ソシエテ、ナショナル、エルフ、アキテ−ヌ Novel cloning/expression vector, yeast transformed with this vector, and its applications

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4439265A (en) * 1981-07-17 1984-03-27 Bell Telephone Laboratories, Incorporated Fabrication method for LiNbO3 and LiTaO3 integrated optics devices
JPS59501045A (en) * 1982-06-02 1984-06-21 ソシエテ、ナショナル、エルフ、アキテ−ヌ Novel cloning/expression vector, yeast transformed with this vector, and its applications

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