JPS56150870A - Vertical mos-fet device - Google Patents
Vertical mos-fet deviceInfo
- Publication number
- JPS56150870A JPS56150870A JP4465081A JP4465081A JPS56150870A JP S56150870 A JPS56150870 A JP S56150870A JP 4465081 A JP4465081 A JP 4465081A JP 4465081 A JP4465081 A JP 4465081A JP S56150870 A JPS56150870 A JP S56150870A
- Authority
- JP
- Japan
- Prior art keywords
- fet device
- vertical mos
- mos
- vertical
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/133,902 US4364073A (en) | 1980-03-25 | 1980-03-25 | Power MOSFET with an anode region |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56150870A true JPS56150870A (en) | 1981-11-21 |
JPS6150397B2 JPS6150397B2 (ja) | 1986-11-04 |
Family
ID=22460824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4465081A Granted JPS56150870A (en) | 1980-03-25 | 1981-03-25 | Vertical mos-fet device |
Country Status (9)
Country | Link |
---|---|
US (1) | US4364073A (ja) |
JP (1) | JPS56150870A (ja) |
DE (1) | DE3110230C3 (ja) |
FR (1) | FR2479567B1 (ja) |
GB (1) | GB2072422B (ja) |
IT (1) | IT1194027B (ja) |
PL (1) | PL137347B1 (ja) |
SE (1) | SE456292B (ja) |
YU (1) | YU43009B (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57120369A (en) * | 1980-12-02 | 1982-07-27 | Gen Electric | Gate enhanced rectifier |
JPS594077A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | 電界効果トランジスタ |
JPS60117673A (ja) * | 1983-11-30 | 1985-06-25 | Toshiba Corp | 半導体装置 |
JPS60196974A (ja) * | 1984-03-19 | 1985-10-05 | Toshiba Corp | 導電変調型mosfet |
JPS60202967A (ja) * | 1984-02-22 | 1985-10-14 | ゼネラル・エレクトリック・カンパニイ | 縦型mosfet装置の製造方法 |
JPS61191071A (ja) * | 1985-02-20 | 1986-08-25 | Toshiba Corp | 伝導度変調型半導体装置及びその製造方法 |
JPS62109366A (ja) * | 1985-11-07 | 1987-05-20 | Fuji Electric Co Ltd | Mos電界効果トランジスタ |
JPS63141375A (ja) * | 1986-12-03 | 1988-06-13 | Fuji Electric Co Ltd | 絶縁ゲ−ト電界効果トランジスタ |
JPH01144683A (ja) * | 1987-11-30 | 1989-06-06 | Fuji Electric Co Ltd | 絶縁ゲート電界効果トランジスタ |
WO1993003502A1 (en) * | 1991-07-26 | 1993-02-18 | Nippondenso Co., Ltd. | Method of producing vertical mosfet |
US6015737A (en) * | 1991-07-26 | 2000-01-18 | Denso Corporation | Production method of a vertical type MOSFET |
US6603173B1 (en) | 1991-07-26 | 2003-08-05 | Denso Corporation | Vertical type MOSFET |
Families Citing this family (96)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3024015A1 (de) * | 1980-06-26 | 1982-01-07 | Siemens AG, 1000 Berlin und 8000 München | Steuerbarer halbleiterschalter |
DD154049A1 (de) * | 1980-10-30 | 1982-02-17 | Siegfried Wagner | Steuerbares halbleiterbauelement |
US4969028A (en) * | 1980-12-02 | 1990-11-06 | General Electric Company | Gate enhanced rectifier |
GB2108758B (en) * | 1981-10-26 | 1985-08-21 | Intersil Inc | Power field-effect transistor structures |
US4677452A (en) * | 1981-10-26 | 1987-06-30 | Intersil, Inc. | Power field-effect transistor structures |
US4782379A (en) * | 1981-11-23 | 1988-11-01 | General Electric Company | Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device |
US4571815A (en) * | 1981-11-23 | 1986-02-25 | General Electric Company | Method of making vertical channel field controlled device employing a recessed gate structure |
DE3200660A1 (de) * | 1982-01-12 | 1983-07-21 | Siemens AG, 1000 Berlin und 8000 München | Mis-feldeffekttransistor mit ladungstraegerinjektion |
IE55992B1 (en) * | 1982-04-05 | 1991-03-13 | Gen Electric | Insulated gate rectifier with improved current-carrying capability |
US4567641A (en) * | 1982-04-12 | 1986-02-04 | General Electric Company | Method of fabricating semiconductor devices having a diffused region of reduced length |
US4574209A (en) * | 1982-06-21 | 1986-03-04 | Eaton Corporation | Split gate EFET and circuitry |
DE3224642A1 (de) * | 1982-07-01 | 1984-01-05 | Siemens AG, 1000 Berlin und 8000 München | Igfet mit injektorzone |
DE3224618A1 (de) * | 1982-07-01 | 1984-01-05 | Siemens AG, 1000 Berlin und 8000 München | Igfet mit ladungstraegerinjektion |
US4541001A (en) * | 1982-09-23 | 1985-09-10 | Eaton Corporation | Bidirectional power FET with substrate-referenced shield |
US4542396A (en) * | 1982-09-23 | 1985-09-17 | Eaton Corporation | Trapped charge bidirectional power FET |
US4577208A (en) * | 1982-09-23 | 1986-03-18 | Eaton Corporation | Bidirectional power FET with integral avalanche protection |
US4553151A (en) * | 1982-09-23 | 1985-11-12 | Eaton Corporation | Bidirectional power FET with field shaping |
US4743952A (en) * | 1983-04-04 | 1988-05-10 | General Electric Company | Insulated-gate semiconductor device with low on-resistance |
US4809047A (en) * | 1983-09-06 | 1989-02-28 | General Electric Company | Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short |
US4551643A (en) * | 1983-10-24 | 1985-11-05 | Rca Corporation | Power switching circuitry |
US5212396A (en) * | 1983-11-30 | 1993-05-18 | Kabushiki Kaisha Toshiba | Conductivity modulated field effect transistor with optimized anode emitter and anode base impurity concentrations |
GB2150753B (en) * | 1983-11-30 | 1987-04-01 | Toshiba Kk | Semiconductor device |
JPS6115370A (ja) * | 1984-06-30 | 1986-01-23 | Toshiba Corp | 半導体装置 |
US4618872A (en) * | 1983-12-05 | 1986-10-21 | General Electric Company | Integrated power switching semiconductor devices including IGT and MOSFET structures |
US4644637A (en) * | 1983-12-30 | 1987-02-24 | General Electric Company | Method of making an insulated-gate semiconductor device with improved shorting region |
US4837606A (en) * | 1984-02-22 | 1989-06-06 | General Electric Company | Vertical MOSFET with reduced bipolar effects |
JPH0618255B2 (ja) * | 1984-04-04 | 1994-03-09 | 株式会社東芝 | 半導体装置 |
US4672407A (en) * | 1984-05-30 | 1987-06-09 | Kabushiki Kaisha Toshiba | Conductivity modulated MOSFET |
US5286984A (en) * | 1984-05-30 | 1994-02-15 | Kabushiki Kaisha Toshiba | Conductivity modulated MOSFET |
DE3546745C2 (de) * | 1984-05-30 | 1994-06-30 | Toshiba Kawasaki Kk | Lateraler MOS-Feldeffekttransistor mit Leitfähigkeitsmodulation |
JPS60260152A (ja) * | 1984-06-07 | 1985-12-23 | Nec Corp | 半導体装置 |
JPS6134753U (ja) * | 1984-07-31 | 1986-03-03 | 株式会社明電舎 | 半導体装置 |
US4620211A (en) * | 1984-08-13 | 1986-10-28 | General Electric Company | Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices |
US4641194A (en) * | 1984-08-27 | 1987-02-03 | Rca Corporation | Kinescope driver in a digital video signal processing system |
US4631564A (en) * | 1984-10-23 | 1986-12-23 | Rca Corporation | Gate shield structure for power MOS device |
US4593458A (en) * | 1984-11-02 | 1986-06-10 | General Electric Company | Fabrication of integrated circuit with complementary, dielectrically-isolated, high voltage semiconductor devices |
US4694313A (en) * | 1985-02-19 | 1987-09-15 | Harris Corporation | Conductivity modulated semiconductor structure |
US4639754A (en) * | 1985-02-25 | 1987-01-27 | Rca Corporation | Vertical MOSFET with diminished bipolar effects |
EP0199293B2 (en) * | 1985-04-24 | 1995-08-30 | General Electric Company | Insulated gate semiconductor device |
US4963951A (en) * | 1985-11-29 | 1990-10-16 | General Electric Company | Lateral insulated gate bipolar transistors with improved latch-up immunity |
US4779123A (en) * | 1985-12-13 | 1988-10-18 | Siliconix Incorporated | Insulated gate transistor array |
DE3688057T2 (de) * | 1986-01-10 | 1993-10-07 | Gen Electric | Halbleitervorrichtung und Methode zur Herstellung. |
US5262336A (en) * | 1986-03-21 | 1993-11-16 | Advanced Power Technology, Inc. | IGBT process to produce platinum lifetime control |
JPS62232167A (ja) * | 1986-04-02 | 1987-10-12 | Nissan Motor Co Ltd | 半導体装置 |
JPH07123166B2 (ja) * | 1986-11-17 | 1995-12-25 | 日産自動車株式会社 | 電導度変調形mosfet |
US5338693A (en) * | 1987-01-08 | 1994-08-16 | International Rectifier Corporation | Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET |
JPH0821713B2 (ja) * | 1987-02-26 | 1996-03-04 | 株式会社東芝 | 導電変調型mosfet |
US5237186A (en) * | 1987-02-26 | 1993-08-17 | Kabushiki Kaisha Toshiba | Conductivity-modulation metal oxide field effect transistor with single gate structure |
US5105243A (en) * | 1987-02-26 | 1992-04-14 | Kabushiki Kaisha Toshiba | Conductivity-modulation metal oxide field effect transistor with single gate structure |
JP2579979B2 (ja) * | 1987-02-26 | 1997-02-12 | 株式会社東芝 | 半導体素子の製造方法 |
US5144401A (en) * | 1987-02-26 | 1992-09-01 | Kabushiki Kaisha Toshiba | Turn-on/off driving technique for insulated gate thyristor |
US4847671A (en) * | 1987-05-19 | 1989-07-11 | General Electric Company | Monolithically integrated insulated gate semiconductor device |
US4888627A (en) * | 1987-05-19 | 1989-12-19 | General Electric Company | Monolithically integrated lateral insulated gate semiconductor device |
US4857983A (en) * | 1987-05-19 | 1989-08-15 | General Electric Company | Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication |
US4866495A (en) * | 1987-05-27 | 1989-09-12 | International Rectifier Corporation | High power MOSFET and integrated control circuit therefor for high-side switch application |
US5023678A (en) * | 1987-05-27 | 1991-06-11 | International Rectifier Corporation | High power MOSFET and integrated control circuit therefor for high-side switch application |
JP2786196B2 (ja) * | 1987-07-21 | 1998-08-13 | 株式会社デンソー | 絶縁ゲート型半導体装置 |
JPH0766968B2 (ja) * | 1987-08-24 | 1995-07-19 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
IT1218200B (it) * | 1988-03-29 | 1990-04-12 | Sgs Thomson Microelectronics | Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti |
US4904609A (en) * | 1988-05-06 | 1990-02-27 | General Electric Company | Method of making symmetrical blocking high voltage breakdown semiconductor device |
US4910563A (en) * | 1988-08-15 | 1990-03-20 | General Electric Company | Complementary circuit and structure with common substrate |
US4898835A (en) * | 1988-10-12 | 1990-02-06 | Sgs-Thomson Microelectronics, Inc. | Single mask totally self-aligned power MOSFET cell fabrication process |
JPH0691263B2 (ja) * | 1988-10-19 | 1994-11-14 | 株式会社東芝 | 半導体装置の製造方法 |
JPH02163974A (ja) * | 1988-12-16 | 1990-06-25 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタおよびその製造方法 |
US5313083A (en) * | 1988-12-16 | 1994-05-17 | Raytheon Company | R.F. switching circuits |
JP2701496B2 (ja) * | 1989-01-30 | 1998-01-21 | 富士電機株式会社 | pチャネル型絶縁ゲートバイポーラトランジスタ |
US5198688A (en) * | 1989-03-06 | 1993-03-30 | Fuji Electric Co., Ltd. | Semiconductor device provided with a conductivity modulation MISFET |
US5095343A (en) * | 1989-06-14 | 1992-03-10 | Harris Corporation | Power MOSFET |
TW399774U (en) * | 1989-07-03 | 2000-07-21 | Gen Electric | FET, IGBT and MCT structures to enhance operating characteristics |
US5237183A (en) * | 1989-12-14 | 1993-08-17 | Motorola, Inc. | High reverse voltage IGT |
IT1247293B (it) * | 1990-05-09 | 1994-12-12 | Int Rectifier Corp | Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione |
US5766966A (en) * | 1996-02-09 | 1998-06-16 | International Rectifier Corporation | Power transistor device having ultra deep increased concentration region |
US5122848A (en) * | 1991-04-08 | 1992-06-16 | Micron Technology, Inc. | Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance |
US5250450A (en) * | 1991-04-08 | 1993-10-05 | Micron Technology, Inc. | Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance |
EP1469524A3 (en) * | 1991-08-08 | 2005-07-06 | Kabushiki Kaisha Toshiba | Insulated trench gate bipolar transistor |
JP3417013B2 (ja) * | 1993-10-18 | 2003-06-16 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
JP3275536B2 (ja) * | 1994-05-31 | 2002-04-15 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP3399119B2 (ja) | 1994-11-10 | 2003-04-21 | 富士電機株式会社 | 半導体装置およびその製造方法 |
US5665988A (en) * | 1995-02-09 | 1997-09-09 | Fuji Electric Co., Ltd. | Conductivity-modulation semiconductor |
JP3228093B2 (ja) * | 1995-06-28 | 2001-11-12 | 富士電機株式会社 | 高耐圧ic |
US6388272B1 (en) | 1996-03-07 | 2002-05-14 | Caldus Semiconductor, Inc. | W/WC/TAC ohmic and rectifying contacts on SiC |
US5929523A (en) * | 1996-03-07 | 1999-07-27 | 3C Semiconductor Corporation | Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC |
US5831318A (en) * | 1996-07-25 | 1998-11-03 | International Rectifier Corporation | Radhard mosfet with thick gate oxide and deep channel region |
JP3696352B2 (ja) * | 1996-12-17 | 2005-09-14 | 三菱電機株式会社 | ライフタイム評価用teg |
DE19707513A1 (de) * | 1997-02-25 | 1998-09-24 | Siemens Ag | Durch Feldeffekt steuerbares Halbleiterbauelement |
US6351009B1 (en) * | 1999-03-01 | 2002-02-26 | Fairchild Semiconductor Corporation | MOS-gated device having a buried gate and process for forming same |
DE10023115A1 (de) | 2000-05-11 | 2001-11-29 | Infineon Technologies Ag | Halbleiter-Leistungsbauelement mit reduziertem parasitärem Bipolartransistor |
DE10117483A1 (de) | 2001-04-07 | 2002-10-17 | Bosch Gmbh Robert | Halbleiterleistungsbauelement und entsprechendes Herstellungsverfahren |
DE10117801B4 (de) | 2001-04-10 | 2005-12-22 | Robert Bosch Gmbh | Halbleiterleistungsbauelement und entsprechendes Herstellungsverfahren |
DE10149777A1 (de) | 2001-10-09 | 2003-04-24 | Bosch Gmbh Robert | Halbleiter-Schaltungsanordnung, insbesondere für Zündungsverwendungen, und Verwendung |
DE102006003932B4 (de) * | 2006-01-26 | 2010-09-16 | Infineon Technologies Austria Ag | Feldeffekthalbleiterbauelement mit einem Minoritätsladungsträger emittierenden Sourcegebiet in eine Bodyzone |
DE102006047244B4 (de) * | 2006-10-04 | 2018-01-18 | Infineon Technologies Austria Ag | Halbleiterbauelement mit einem monokristallinen Halbleiterkörper und Verfahren zur Herstellung desselben |
US7951676B2 (en) | 2008-08-29 | 2011-05-31 | Infineon Technologies Ag | Semiconductor device and method for the production of a semiconductor device |
US9611868B2 (en) | 2010-04-09 | 2017-04-04 | Shipstone Corporation | System and method for energy storage and retrieval |
DK2556263T3 (en) | 2010-04-09 | 2017-02-06 | Daniel John Kenway | ENERGY STORAGE AND RECOVERY SYSTEM |
EP3823008A1 (en) | 2019-11-12 | 2021-05-19 | Paul Scherrer Institut | Methods of manufacturing semiconductor devices |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE623187A (ja) * | 1961-10-06 | |||
FR1317256A (fr) * | 1961-12-16 | 1963-02-08 | Teszner Stanislas | Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets |
US3324359A (en) * | 1963-09-30 | 1967-06-06 | Gen Electric | Four layer semiconductor switch with the third layer defining a continuous, uninterrupted internal junction |
US3264493A (en) * | 1963-10-01 | 1966-08-02 | Fairchild Camera Instr Co | Semiconductor circuit module for a high-gain, high-input impedance amplifier |
JPS509156B1 (ja) | 1970-10-09 | 1975-04-10 | ||
US3900771A (en) * | 1970-11-25 | 1975-08-19 | Gerhard Krause | Transistor with high current density |
BE788874A (fr) * | 1971-09-17 | 1973-01-02 | Western Electric Co | Module de circuit integre |
US3831187A (en) * | 1973-04-11 | 1974-08-20 | Rca Corp | Thyristor having capacitively coupled control electrode |
US4156248A (en) * | 1977-01-31 | 1979-05-22 | Rca Corporation | Gate turn-off semiconductor controlled rectifier device with highly doped buffer region portion |
JPS5431352A (en) * | 1977-08-10 | 1979-03-08 | Hitachi Ltd | Hair iron |
US4199774A (en) * | 1978-09-18 | 1980-04-22 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithic semiconductor switching device |
GB2034114A (en) | 1978-10-06 | 1980-05-29 | Gen Electric | Method of manufacturing a V- groove IGFET |
DE2904424C2 (de) * | 1979-02-06 | 1982-09-02 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit Steuerung durch Feldeffekttransistor |
-
1980
- 1980-03-25 US US06/133,902 patent/US4364073A/en not_active Expired - Lifetime
-
1981
- 1981-02-26 SE SE8101263A patent/SE456292B/sv not_active IP Right Cessation
- 1981-03-09 IT IT20225/81A patent/IT1194027B/it active
- 1981-03-17 DE DE3110230A patent/DE3110230C3/de not_active Expired - Lifetime
- 1981-03-18 GB GB8108469A patent/GB2072422B/en not_active Expired
- 1981-03-24 YU YU774/81A patent/YU43009B/xx unknown
- 1981-03-24 FR FR8105869A patent/FR2479567B1/fr not_active Expired
- 1981-03-25 JP JP4465081A patent/JPS56150870A/ja active Granted
- 1981-03-25 PL PL1981230318A patent/PL137347B1/pl unknown
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57120369A (en) * | 1980-12-02 | 1982-07-27 | Gen Electric | Gate enhanced rectifier |
JPS594077A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | 電界効果トランジスタ |
JPS60117673A (ja) * | 1983-11-30 | 1985-06-25 | Toshiba Corp | 半導体装置 |
JPS60202967A (ja) * | 1984-02-22 | 1985-10-14 | ゼネラル・エレクトリック・カンパニイ | 縦型mosfet装置の製造方法 |
JPH0467343B2 (ja) * | 1984-03-19 | 1992-10-28 | Tokyo Shibaura Electric Co | |
JPS60196974A (ja) * | 1984-03-19 | 1985-10-05 | Toshiba Corp | 導電変調型mosfet |
JPS61191071A (ja) * | 1985-02-20 | 1986-08-25 | Toshiba Corp | 伝導度変調型半導体装置及びその製造方法 |
JPH0544835B2 (ja) * | 1985-02-20 | 1993-07-07 | Tokyo Shibaura Electric Co | |
JPS62109366A (ja) * | 1985-11-07 | 1987-05-20 | Fuji Electric Co Ltd | Mos電界効果トランジスタ |
JPS63141375A (ja) * | 1986-12-03 | 1988-06-13 | Fuji Electric Co Ltd | 絶縁ゲ−ト電界効果トランジスタ |
JPH01144683A (ja) * | 1987-11-30 | 1989-06-06 | Fuji Electric Co Ltd | 絶縁ゲート電界効果トランジスタ |
WO1993003502A1 (en) * | 1991-07-26 | 1993-02-18 | Nippondenso Co., Ltd. | Method of producing vertical mosfet |
US5460985A (en) * | 1991-07-26 | 1995-10-24 | Ipics Corporation | Production method of a verticle type MOSFET |
US6015737A (en) * | 1991-07-26 | 2000-01-18 | Denso Corporation | Production method of a vertical type MOSFET |
US6603173B1 (en) | 1991-07-26 | 2003-08-05 | Denso Corporation | Vertical type MOSFET |
Also Published As
Publication number | Publication date |
---|---|
SE8101263L (sv) | 1981-09-26 |
DE3110230A1 (de) | 1982-01-14 |
PL137347B1 (en) | 1986-05-31 |
JPS6150397B2 (ja) | 1986-11-04 |
IT1194027B (it) | 1988-08-31 |
IT8120225A0 (it) | 1981-03-09 |
FR2479567B1 (fr) | 1986-04-18 |
YU77481A (en) | 1983-06-30 |
YU43009B (en) | 1989-02-28 |
FR2479567A1 (fr) | 1981-10-02 |
PL230318A1 (ja) | 1982-01-04 |
SE456292B (sv) | 1988-09-19 |
DE3110230C2 (ja) | 1992-12-24 |
DE3110230C3 (de) | 1998-07-09 |
GB2072422A (en) | 1981-09-30 |
US4364073A (en) | 1982-12-14 |
GB2072422B (en) | 1984-05-16 |
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