JPS5591819A - Vapor phase growth method - Google Patents
Vapor phase growth methodInfo
- Publication number
- JPS5591819A JPS5591819A JP16479978A JP16479978A JPS5591819A JP S5591819 A JPS5591819 A JP S5591819A JP 16479978 A JP16479978 A JP 16479978A JP 16479978 A JP16479978 A JP 16479978A JP S5591819 A JPS5591819 A JP S5591819A
- Authority
- JP
- Japan
- Prior art keywords
- temperature region
- growth
- crystal
- temperature
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain a sharp distribution of impurity concentration by providing inside of a reacting pipe not only a crystal-growth high-temperature region but also a secondary high- temperature region through a low-temperature region so that a crystal-growth substrate can be shifted to the secondary high-temperature region until reacting gas is satisfactorily mixed.
CONSTITUTION: Temperature distribution in a quartz reacting pipe of a vapor phase growth device is set in such a manner as demonstrated in the sketch. In short, to be provided on the both sides of a low-temperature region D are a primary high-temperature region C, which has substrate- installed sections's temperature of 730°C and a temperature gradient of 5°C/cm, and a temperature region E, which is similar to the primary high-temperature region. And, at first, the crystal- growth substrate 23 is temporarily transferred to the secondary high-temperature region E, and after the crystsl-growth reacting gas has been satisfactorily mixed, the substrate 23 is moved back to the primary high-temperature region for achievement of crystal growth. It is possible, by repeating this process, to obtain a multi layer crystal growth layer and, besides, this growth is achieved after the reacting gas has been satisfactorily mixed, and therefore, impurity concentration distributions of all the growth layers can be made sharp. This method is best suited for such a purpose as to provided a buffer layer and an acting layer on a semi-insulating GaAs substrate.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16479978A JPS5591819A (en) | 1978-12-28 | 1978-12-28 | Vapor phase growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16479978A JPS5591819A (en) | 1978-12-28 | 1978-12-28 | Vapor phase growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5591819A true JPS5591819A (en) | 1980-07-11 |
| JPS6246975B2 JPS6246975B2 (en) | 1987-10-06 |
Family
ID=15800146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16479978A Granted JPS5591819A (en) | 1978-12-28 | 1978-12-28 | Vapor phase growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5591819A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5775820U (en) * | 1980-10-28 | 1982-05-11 | ||
| JPS5776827A (en) * | 1980-10-31 | 1982-05-14 | Fujitsu Ltd | Semiconductor device |
| CN106435718A (en) * | 2016-11-25 | 2017-02-22 | 中国科学院上海技术物理研究所 | Quartz sleeve for high-airtightness tellurium cadmium mercury vapor phase epitaxy |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5333055A (en) * | 1976-09-09 | 1978-03-28 | Fujitsu Ltd | Vapor phase growing apparatus of semiconductor crystals |
| JPS53105371A (en) * | 1977-02-25 | 1978-09-13 | Oki Electric Ind Co Ltd | Crystal growing method for potassium arsenide |
-
1978
- 1978-12-28 JP JP16479978A patent/JPS5591819A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5333055A (en) * | 1976-09-09 | 1978-03-28 | Fujitsu Ltd | Vapor phase growing apparatus of semiconductor crystals |
| JPS53105371A (en) * | 1977-02-25 | 1978-09-13 | Oki Electric Ind Co Ltd | Crystal growing method for potassium arsenide |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5775820U (en) * | 1980-10-28 | 1982-05-11 | ||
| JPS5776827A (en) * | 1980-10-31 | 1982-05-14 | Fujitsu Ltd | Semiconductor device |
| CN106435718A (en) * | 2016-11-25 | 2017-02-22 | 中国科学院上海技术物理研究所 | Quartz sleeve for high-airtightness tellurium cadmium mercury vapor phase epitaxy |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6246975B2 (en) | 1987-10-06 |
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