JPS5267259A - Preparation of iii-v group compounds semiconductor epitaxial laminatio n crystal - Google Patents

Preparation of iii-v group compounds semiconductor epitaxial laminatio n crystal

Info

Publication number
JPS5267259A
JPS5267259A JP14359475A JP14359475A JPS5267259A JP S5267259 A JPS5267259 A JP S5267259A JP 14359475 A JP14359475 A JP 14359475A JP 14359475 A JP14359475 A JP 14359475A JP S5267259 A JPS5267259 A JP S5267259A
Authority
JP
Japan
Prior art keywords
iii
crystal
semiconductor epitaxial
laminatio
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14359475A
Other languages
Japanese (ja)
Other versions
JPS5826656B2 (en
Inventor
Osamu Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14359475A priority Critical patent/JPS5826656B2/en
Publication of JPS5267259A publication Critical patent/JPS5267259A/en
Publication of JPS5826656B2 publication Critical patent/JPS5826656B2/en
Expired legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: A window is made at midway of gas lead tube which pierces into quartz reaction tube, and gas flown out through the window is regulated by the valve under the window. In this way, a III-V growp compounds semiconductor epitaxial lamination crystal can be secured with sharp impurity density.
COPYRIGHT: (C)1977,JPO&Japio
JP14359475A 1975-12-01 1975-12-01 3-5 Epitaxy method Expired JPS5826656B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14359475A JPS5826656B2 (en) 1975-12-01 1975-12-01 3-5 Epitaxy method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14359475A JPS5826656B2 (en) 1975-12-01 1975-12-01 3-5 Epitaxy method

Publications (2)

Publication Number Publication Date
JPS5267259A true JPS5267259A (en) 1977-06-03
JPS5826656B2 JPS5826656B2 (en) 1983-06-04

Family

ID=15342343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14359475A Expired JPS5826656B2 (en) 1975-12-01 1975-12-01 3-5 Epitaxy method

Country Status (1)

Country Link
JP (1) JPS5826656B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI408719B (en) * 2007-11-08 2013-09-11 Futaba Denshi Kogyo Kk Flourescent display tube

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035249U (en) * 1983-08-18 1985-03-11 セイコーインスツルメンツ株式会社 Automatic sample exchange device in X-ray analyzer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI408719B (en) * 2007-11-08 2013-09-11 Futaba Denshi Kogyo Kk Flourescent display tube

Also Published As

Publication number Publication date
JPS5826656B2 (en) 1983-06-04

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