JPS5333055A - Vapor phase growing apparatus of semiconductor crystals - Google Patents

Vapor phase growing apparatus of semiconductor crystals

Info

Publication number
JPS5333055A
JPS5333055A JP10729076A JP10729076A JPS5333055A JP S5333055 A JPS5333055 A JP S5333055A JP 10729076 A JP10729076 A JP 10729076A JP 10729076 A JP10729076 A JP 10729076A JP S5333055 A JPS5333055 A JP S5333055A
Authority
JP
Japan
Prior art keywords
vapor phase
growing apparatus
semiconductor crystals
phase growing
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10729076A
Other languages
Japanese (ja)
Other versions
JPS5841657B2 (en
Inventor
Akihiro Shibatomi
Akira Miura
Kazuto Ogasawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP51107290A priority Critical patent/JPS5841657B2/en
Publication of JPS5333055A publication Critical patent/JPS5333055A/en
Publication of JPS5841657B2 publication Critical patent/JPS5841657B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To form even growth films by sectioning a growth chamber and a source chamber to a plurality, rotating these relatively and shielding between both chambers over a specified rotating angle.
COPYRIGHT: (C)1978,JPO&Japio
JP51107290A 1976-09-09 1976-09-09 Semiconductor crystal vapor phase growth equipment Expired JPS5841657B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51107290A JPS5841657B2 (en) 1976-09-09 1976-09-09 Semiconductor crystal vapor phase growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51107290A JPS5841657B2 (en) 1976-09-09 1976-09-09 Semiconductor crystal vapor phase growth equipment

Publications (2)

Publication Number Publication Date
JPS5333055A true JPS5333055A (en) 1978-03-28
JPS5841657B2 JPS5841657B2 (en) 1983-09-13

Family

ID=14455334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51107290A Expired JPS5841657B2 (en) 1976-09-09 1976-09-09 Semiconductor crystal vapor phase growth equipment

Country Status (1)

Country Link
JP (1) JPS5841657B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591819A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Vapor phase growth method
JPS5710921A (en) * 1980-06-23 1982-01-20 Mitsubishi Electric Corp Gas phase epitaxial growth device
JPS5825223A (en) * 1981-08-06 1983-02-15 Nec Corp Vapor growth unit for 3-5 compound semiconductor
JPS6328031A (en) * 1986-07-21 1988-02-05 Matsushita Electric Ind Co Ltd Vapor growth apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591819A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Vapor phase growth method
JPS6246975B2 (en) * 1978-12-28 1987-10-06 Fujitsu Ltd
JPS5710921A (en) * 1980-06-23 1982-01-20 Mitsubishi Electric Corp Gas phase epitaxial growth device
JPS5825223A (en) * 1981-08-06 1983-02-15 Nec Corp Vapor growth unit for 3-5 compound semiconductor
JPS6328031A (en) * 1986-07-21 1988-02-05 Matsushita Electric Ind Co Ltd Vapor growth apparatus

Also Published As

Publication number Publication date
JPS5841657B2 (en) 1983-09-13

Similar Documents

Publication Publication Date Title
JPS52140267A (en) Vapor epitaxial crystal growing device
JPS5320767A (en) X-ray mask supporting underlayer and its production
JPS52115185A (en) Vapor phase growing apparatus
JPS5333055A (en) Vapor phase growing apparatus of semiconductor crystals
JPS51111476A (en) Method of liquid phase epitaxial crystal growth
JPS538374A (en) Growing method for single crystal of semiconductor
JPS5296865A (en) Crystal grown unit for chemical compound semiconductor
JPS53124968A (en) Continuous vapor deposition apparatus
JPS52117062A (en) Liquid phase epitaxial growth process
JPS5223021A (en) Process for preparation of leucylagmatine compound
JPS51114383A (en) Liquid phase epitaxial crystal growth
JPS5345171A (en) Molecular beam epitaxial growth method
JPS5356197A (en) Gas phase growing method of ultraphosphate
JPS5224166A (en) Process for growth of 3-dimensional compound crystal
JPS53129583A (en) Vapour phase growing device of compound semiconductor
JPS5224167A (en) Process for growth of 3-dimensional compound crystal
JPS5370669A (en) Liquid phase epitaxial growth apparatus and method
JPS5277898A (en) Crystal growth of gallium arsenide from vapor phase
JPS53108766A (en) Vapor phase growth method of sos film
JPS52146554A (en) Multilayer epitaxial growth and its apparatus
JPS53121569A (en) Vapor growth method
JPS52154347A (en) Low temperature single crystal thin film growth method
JPS53116775A (en) Vapor phase growth apparatus of semiconductor crystals
JPS52149476A (en) Liquid phase epitaxial growth apparatus
JPS542660A (en) Liquid-phase epitaxial growth method of compound semiconductor