JPS5478377A - Method and apparatus for growing semiconductor crystal - Google Patents
Method and apparatus for growing semiconductor crystalInfo
- Publication number
- JPS5478377A JPS5478377A JP14625677A JP14625677A JPS5478377A JP S5478377 A JPS5478377 A JP S5478377A JP 14625677 A JP14625677 A JP 14625677A JP 14625677 A JP14625677 A JP 14625677A JP S5478377 A JPS5478377 A JP S5478377A
- Authority
- JP
- Japan
- Prior art keywords
- liq
- molten
- substrate
- crystal
- bath
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To grow semiconductor crystal of high purity on a substrate in order, by making a substrate crystal contact with plural mother molten liq., then with plural thin layer molten liq. of the same composition in turn, hereby preventing mixing of the molten liq.
CONSTITUTION: For a substrate crystal 3 is used, e.g., GaAs crystal doped with Si. Then GaAs crystals 21W24 which are not doped are held in growing-boats and are inserted into a reaction tube. In that case, bath tanks 16W19 made by bath-tank plate 2 are made to coincide with molten-liq.-separating spaces 12W15 made by molten-liq.-separating plate 8. After growing-boat is heated, the bath-tank plate 2 is moved in the direction of an arrow in order to separate a portion of mother molten liq. 4W9 in molten-liq.-separating spaces 12W15 so as to prepare thin layers 25W28, which are made to contact with crystals 21W24 in order to maintain the composition constant. Then while being cooled, substrate-crystal-support plate 1 is moved in the direction of an arrow and the substrate is stopped under the thin layers 25W28 so as to deposit 4 layers on the substrate 3 epitaxially.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14625677A JPS5478377A (en) | 1977-12-05 | 1977-12-05 | Method and apparatus for growing semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14625677A JPS5478377A (en) | 1977-12-05 | 1977-12-05 | Method and apparatus for growing semiconductor crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5478377A true JPS5478377A (en) | 1979-06-22 |
| JPS5620688B2 JPS5620688B2 (en) | 1981-05-15 |
Family
ID=15403616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14625677A Granted JPS5478377A (en) | 1977-12-05 | 1977-12-05 | Method and apparatus for growing semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5478377A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59101823A (en) * | 1982-12-03 | 1984-06-12 | Nec Corp | Liquid-phase epitaxial growth device |
| CN111962146A (en) * | 2020-09-15 | 2020-11-20 | 北京智创芯源科技有限公司 | Horizontal liquid phase epitaxial graphite boat, growth system, epitaxial method and growth method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4934275A (en) * | 1972-07-28 | 1974-03-29 | ||
| JPS51139774A (en) * | 1975-05-28 | 1976-12-02 | Sony Corp | Liquid phase growing device |
-
1977
- 1977-12-05 JP JP14625677A patent/JPS5478377A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4934275A (en) * | 1972-07-28 | 1974-03-29 | ||
| JPS51139774A (en) * | 1975-05-28 | 1976-12-02 | Sony Corp | Liquid phase growing device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59101823A (en) * | 1982-12-03 | 1984-06-12 | Nec Corp | Liquid-phase epitaxial growth device |
| JPH029444B2 (en) * | 1982-12-03 | 1990-03-02 | Nippon Electric Co | |
| CN111962146A (en) * | 2020-09-15 | 2020-11-20 | 北京智创芯源科技有限公司 | Horizontal liquid phase epitaxial graphite boat, growth system, epitaxial method and growth method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5620688B2 (en) | 1981-05-15 |
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