JPS54146576A - Vapor growth method - Google Patents

Vapor growth method

Info

Publication number
JPS54146576A
JPS54146576A JP5530878A JP5530878A JPS54146576A JP S54146576 A JPS54146576 A JP S54146576A JP 5530878 A JP5530878 A JP 5530878A JP 5530878 A JP5530878 A JP 5530878A JP S54146576 A JPS54146576 A JP S54146576A
Authority
JP
Japan
Prior art keywords
zns
substrate
temperature part
quality
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5530878A
Other languages
Japanese (ja)
Other versions
JPS5635021B2 (en
Inventor
Nobuhide Matsuda
Masafumi Hashimoto
Isamu Akasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5530878A priority Critical patent/JPS54146576A/en
Publication of JPS54146576A publication Critical patent/JPS54146576A/en
Publication of JPS5635021B2 publication Critical patent/JPS5635021B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To obtain a high-quality ZnS single crystal on the substrate by providing the ZnS powder at the high-temperature part in the quartz reaction tube along with H2 flown in and thus controlling GaP of the low-temperature part or temperature t and growing speed V of the GaAs substrate.
CONSTITUTION: The ZnS4 powder is provided at the high-temperature part of quartz tube 6 plus H2 flown in, and GaP of the low-temperature part or ZnS on GaAs substrate 5 is educed. As these materials features the grid constant close to ZnS, a high-quality crystal can be educed onto the substrate but some crack is caused the growth layer when the substrate is returned into the room temperature after reaction since the expansion coefficients differ. If the stress is lessended by giving a selective eduction via the SiO2 mask, the crack can be prevented. However, the selective growth is impossible under t<800°C. Now, 800°C<t<900°C and Oμ/h<v(growing speed)<20μ/h are satisfied with (950-t)/7.5 secured. As a result, a high-quality and crackless ZnS crystal can be formed selectively on the GaP and GaAs substrate via the SiO2 mask.
COPYRIGHT: (C)1979,JPO&Japio
JP5530878A 1978-05-09 1978-05-09 Vapor growth method Granted JPS54146576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5530878A JPS54146576A (en) 1978-05-09 1978-05-09 Vapor growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5530878A JPS54146576A (en) 1978-05-09 1978-05-09 Vapor growth method

Publications (2)

Publication Number Publication Date
JPS54146576A true JPS54146576A (en) 1979-11-15
JPS5635021B2 JPS5635021B2 (en) 1981-08-14

Family

ID=12994932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5530878A Granted JPS54146576A (en) 1978-05-09 1978-05-09 Vapor growth method

Country Status (1)

Country Link
JP (1) JPS54146576A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58141828U (en) * 1982-03-19 1983-09-24 自動車機器技術研究組合 liquid level sensor
US4521373A (en) * 1982-08-23 1985-06-04 General Electric Company Liquid level sensor

Also Published As

Publication number Publication date
JPS5635021B2 (en) 1981-08-14

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