JPS5543882A - Gaseous-phase growing of compound semiconductor epitaxial film - Google Patents
Gaseous-phase growing of compound semiconductor epitaxial filmInfo
- Publication number
- JPS5543882A JPS5543882A JP11723078A JP11723078A JPS5543882A JP S5543882 A JPS5543882 A JP S5543882A JP 11723078 A JP11723078 A JP 11723078A JP 11723078 A JP11723078 A JP 11723078A JP S5543882 A JPS5543882 A JP S5543882A
- Authority
- JP
- Japan
- Prior art keywords
- gaseous
- epitaxial film
- growing
- compound semiconductor
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To grow III-V group compound semiconductor epitaxial film of good planarity without crown formation, by operating etching prior to the gaseous-phase epitaxial growing on a single crystal base.
CONSTITUTION: In growing III-V group compound epitaxial film on the surface of a single crystal base, prior to the gaseous-phase growing the epitaxial film, a gas stream containing an etching gas is made to flow in the same direction as that of the gas stream used for gaseous-phase growth, and thereby the base is etched. The thickness of the surface of the base on the upper stream side of the gas stream is made thinner than that of other regions.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11723078A JPS5543882A (en) | 1978-09-22 | 1978-09-22 | Gaseous-phase growing of compound semiconductor epitaxial film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11723078A JPS5543882A (en) | 1978-09-22 | 1978-09-22 | Gaseous-phase growing of compound semiconductor epitaxial film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5543882A true JPS5543882A (en) | 1980-03-27 |
JPS6114651B2 JPS6114651B2 (en) | 1986-04-19 |
Family
ID=14706599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11723078A Granted JPS5543882A (en) | 1978-09-22 | 1978-09-22 | Gaseous-phase growing of compound semiconductor epitaxial film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5543882A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02139918A (en) * | 1988-11-19 | 1990-05-29 | Agency Of Ind Science & Technol | Manufacture of hetero structure |
JP2011082307A (en) * | 2009-10-06 | 2011-04-21 | Stanley Electric Co Ltd | Method of manufacturing semiconductor light-emitting apparatus |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6386048U (en) * | 1986-11-20 | 1988-06-04 |
-
1978
- 1978-09-22 JP JP11723078A patent/JPS5543882A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02139918A (en) * | 1988-11-19 | 1990-05-29 | Agency Of Ind Science & Technol | Manufacture of hetero structure |
JP2011082307A (en) * | 2009-10-06 | 2011-04-21 | Stanley Electric Co Ltd | Method of manufacturing semiconductor light-emitting apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPS6114651B2 (en) | 1986-04-19 |
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