JPS5543882A - Gaseous-phase growing of compound semiconductor epitaxial film - Google Patents

Gaseous-phase growing of compound semiconductor epitaxial film

Info

Publication number
JPS5543882A
JPS5543882A JP11723078A JP11723078A JPS5543882A JP S5543882 A JPS5543882 A JP S5543882A JP 11723078 A JP11723078 A JP 11723078A JP 11723078 A JP11723078 A JP 11723078A JP S5543882 A JPS5543882 A JP S5543882A
Authority
JP
Japan
Prior art keywords
gaseous
epitaxial film
growing
compound semiconductor
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11723078A
Other languages
Japanese (ja)
Other versions
JPS6114651B2 (en
Inventor
Shinichi Hasegawa
Hisanori Fujita
Kunio Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Polytec Co
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP11723078A priority Critical patent/JPS5543882A/en
Publication of JPS5543882A publication Critical patent/JPS5543882A/en
Publication of JPS6114651B2 publication Critical patent/JPS6114651B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To grow III-V group compound semiconductor epitaxial film of good planarity without crown formation, by operating etching prior to the gaseous-phase epitaxial growing on a single crystal base.
CONSTITUTION: In growing III-V group compound epitaxial film on the surface of a single crystal base, prior to the gaseous-phase growing the epitaxial film, a gas stream containing an etching gas is made to flow in the same direction as that of the gas stream used for gaseous-phase growth, and thereby the base is etched. The thickness of the surface of the base on the upper stream side of the gas stream is made thinner than that of other regions.
COPYRIGHT: (C)1980,JPO&Japio
JP11723078A 1978-09-22 1978-09-22 Gaseous-phase growing of compound semiconductor epitaxial film Granted JPS5543882A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11723078A JPS5543882A (en) 1978-09-22 1978-09-22 Gaseous-phase growing of compound semiconductor epitaxial film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11723078A JPS5543882A (en) 1978-09-22 1978-09-22 Gaseous-phase growing of compound semiconductor epitaxial film

Publications (2)

Publication Number Publication Date
JPS5543882A true JPS5543882A (en) 1980-03-27
JPS6114651B2 JPS6114651B2 (en) 1986-04-19

Family

ID=14706599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11723078A Granted JPS5543882A (en) 1978-09-22 1978-09-22 Gaseous-phase growing of compound semiconductor epitaxial film

Country Status (1)

Country Link
JP (1) JPS5543882A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139918A (en) * 1988-11-19 1990-05-29 Agency Of Ind Science & Technol Manufacture of hetero structure
JP2011082307A (en) * 2009-10-06 2011-04-21 Stanley Electric Co Ltd Method of manufacturing semiconductor light-emitting apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6386048U (en) * 1986-11-20 1988-06-04

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139918A (en) * 1988-11-19 1990-05-29 Agency Of Ind Science & Technol Manufacture of hetero structure
JP2011082307A (en) * 2009-10-06 2011-04-21 Stanley Electric Co Ltd Method of manufacturing semiconductor light-emitting apparatus

Also Published As

Publication number Publication date
JPS6114651B2 (en) 1986-04-19

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