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Fujitsu Ltd
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Fujitsu Ltd
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Publication date
Application filed by Fujitsu LtdfiledCriticalFujitsu Ltd
Priority to JP9152576ApriorityCriticalpatent/JPS5316396A/en
Publication of JPS5316396ApublicationCriticalpatent/JPS5316396A/en
Publication of JPS5617317B2publicationCriticalpatent/JPS5617317B2/ja
PURPOSE: To grow a uniform single crystal line alumina film with good crystallinity at gaseous phase by supplying CHe and CO2 gases in a prescribed molar ratio into a reaction tube provided with a heated single crystal line silicon substrate and Al.
COPYRIGHT: (C)1978,JPO&Japio
JP9152576A1976-07-301976-07-30Gaseous phase growing method for single crystalline alumina
GrantedJPS5316396A
(en)