JPS647550A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS647550A JPS647550A JP16374287A JP16374287A JPS647550A JP S647550 A JPS647550 A JP S647550A JP 16374287 A JP16374287 A JP 16374287A JP 16374287 A JP16374287 A JP 16374287A JP S647550 A JPS647550 A JP S647550A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- layer
- nitride film
- polycrystalline silicon
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To realize with stability a high resistance value not to be affected by later processes by a method wherein the entire surface of a polycrystalline silicon layer, except where electrode wiring connections are planned, is covered by a silicon nitride film. CONSTITUTION:An semiconductor device of this design is constituted of an insulating film 2 formed on a semiconductor substrate 1, a first silicon nitride film 3 formed on the insulating film 2, a polycrystalline silicon layer 4 selectively formed on the first silicon nitride film 3, a second silicon nitride film 5 covering the polycrystalline silicon layer 4, and electrode wirings 6 connecting to the polycrystalline silicon layer 4 in an opening selectively formed in the second silicon nitride layer 5. Such silicon nitride films 3 and 5 will be so closely packed as to be suitable for preventing diffusion of impurities from the outside. This design produces a semiconductor device provided with a microstructure resistance layer higher in resistance and stability.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16374287A JPS647550A (en) | 1987-06-29 | 1987-06-29 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16374287A JPS647550A (en) | 1987-06-29 | 1987-06-29 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS647550A true JPS647550A (en) | 1989-01-11 |
Family
ID=15779815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16374287A Pending JPS647550A (en) | 1987-06-29 | 1987-06-29 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS647550A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5465005A (en) * | 1991-10-30 | 1995-11-07 | Texas Instruments Incorporated | Polysilicon resistor structure including polysilicon contacts |
JP2017079254A (en) * | 2015-10-20 | 2017-04-27 | 新日本無線株式会社 | Semiconductor device |
-
1987
- 1987-06-29 JP JP16374287A patent/JPS647550A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5465005A (en) * | 1991-10-30 | 1995-11-07 | Texas Instruments Incorporated | Polysilicon resistor structure including polysilicon contacts |
US6261915B1 (en) | 1991-10-30 | 2001-07-17 | Texas Instruments Incorporated | Process of making polysilicon resistor |
JP2017079254A (en) * | 2015-10-20 | 2017-04-27 | 新日本無線株式会社 | Semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6425439A (en) | Semiconductor integrated circuit device | |
JPS5459080A (en) | Semiconductor device | |
JPS5643749A (en) | Semiconductor device and its manufacture | |
JPS647550A (en) | Semiconductor device | |
JPS56115557A (en) | Manufacture of semiconductor device | |
JPS5732641A (en) | Semiconductor device | |
JPS6457717A (en) | Manufacture of semiconductor device | |
JPS5766673A (en) | Manufacture of mos type semiconductor device | |
JPS56125875A (en) | Semiconductor integrated circuit device | |
FR2428915A1 (en) | Contact prodn. in semiconductor device with multiple wiring layers - using reactive metal film in contact hole between two aluminium layers to prevent faults | |
JPS55113344A (en) | Electrode wiring and its manufacture | |
JPS57202776A (en) | Semiconductor device | |
JPS6445132A (en) | Semiconductor device | |
JPS57210659A (en) | Semiconductor device | |
JPS56146254A (en) | Manufacture of semiconductor device | |
JPS5687346A (en) | Manufacture of semiconductor device | |
JPS57190333A (en) | Semiconductor device | |
JPS55110056A (en) | Semiconductor device | |
JPS5732642A (en) | Semiconductor device | |
JPS57160156A (en) | Semiconductor device | |
JPS52151567A (en) | Protecting method of wiring layers | |
JPS57115858A (en) | Semiconductor device | |
JPS52125285A (en) | Semiconductor device | |
JPS57111043A (en) | Semiconductor integrated circuit and manufacture thereof | |
JPS5612752A (en) | Manufacture of semiconductor integrated circuit |