JPS647550A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS647550A
JPS647550A JP16374287A JP16374287A JPS647550A JP S647550 A JPS647550 A JP S647550A JP 16374287 A JP16374287 A JP 16374287A JP 16374287 A JP16374287 A JP 16374287A JP S647550 A JPS647550 A JP S647550A
Authority
JP
Japan
Prior art keywords
silicon nitride
layer
nitride film
polycrystalline silicon
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16374287A
Other languages
Japanese (ja)
Inventor
Takayuki Kamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16374287A priority Critical patent/JPS647550A/en
Publication of JPS647550A publication Critical patent/JPS647550A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To realize with stability a high resistance value not to be affected by later processes by a method wherein the entire surface of a polycrystalline silicon layer, except where electrode wiring connections are planned, is covered by a silicon nitride film. CONSTITUTION:An semiconductor device of this design is constituted of an insulating film 2 formed on a semiconductor substrate 1, a first silicon nitride film 3 formed on the insulating film 2, a polycrystalline silicon layer 4 selectively formed on the first silicon nitride film 3, a second silicon nitride film 5 covering the polycrystalline silicon layer 4, and electrode wirings 6 connecting to the polycrystalline silicon layer 4 in an opening selectively formed in the second silicon nitride layer 5. Such silicon nitride films 3 and 5 will be so closely packed as to be suitable for preventing diffusion of impurities from the outside. This design produces a semiconductor device provided with a microstructure resistance layer higher in resistance and stability.
JP16374287A 1987-06-29 1987-06-29 Semiconductor device Pending JPS647550A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16374287A JPS647550A (en) 1987-06-29 1987-06-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16374287A JPS647550A (en) 1987-06-29 1987-06-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS647550A true JPS647550A (en) 1989-01-11

Family

ID=15779815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16374287A Pending JPS647550A (en) 1987-06-29 1987-06-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS647550A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465005A (en) * 1991-10-30 1995-11-07 Texas Instruments Incorporated Polysilicon resistor structure including polysilicon contacts
JP2017079254A (en) * 2015-10-20 2017-04-27 新日本無線株式会社 Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465005A (en) * 1991-10-30 1995-11-07 Texas Instruments Incorporated Polysilicon resistor structure including polysilicon contacts
US6261915B1 (en) 1991-10-30 2001-07-17 Texas Instruments Incorporated Process of making polysilicon resistor
JP2017079254A (en) * 2015-10-20 2017-04-27 新日本無線株式会社 Semiconductor device

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