JPS56158455A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56158455A
JPS56158455A JP367481A JP367481A JPS56158455A JP S56158455 A JPS56158455 A JP S56158455A JP 367481 A JP367481 A JP 367481A JP 367481 A JP367481 A JP 367481A JP S56158455 A JPS56158455 A JP S56158455A
Authority
JP
Japan
Prior art keywords
layer
type
junctions
constitution
openings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP367481A
Other languages
Japanese (ja)
Other versions
JPS6113383B2 (en
Inventor
Masanori Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP367481A priority Critical patent/JPS56158455A/en
Publication of JPS56158455A publication Critical patent/JPS56158455A/en
Publication of JPS6113383B2 publication Critical patent/JPS6113383B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a highly reliable wiring path of the semiconductor device by a method wherein a semiconductor layer being connected to an impurity layer on the semiconductor substrate and extending over an insulating film is separated by P-N junctions. CONSTITUTION:A P type source 2, a drain 3 and an SiO2 layer 4 are provided on an N type Si substrate 1, and openings for electrodes are formed. An N type Si layer 5 is evaporated thereon, it is thermally oxidized to provide SiO2 layers 6, openings are formed selectively by photoetching method and a P type impurity of B, etc., is made to diffuse in the N type layer 5 to form a source electrode 7, a gate electrode 8 and a drain electrode 9. Accordingly the respective electrodes 7-9 are separated by P-N junctions. Then it is covered with a thermal oxide film 10. By this constitution, because the wiring paths 7-9 are covered with the strong and minute oxide film, contamination from the outside is hard, and extremely superior stability and high reliability can be obtained.
JP367481A 1981-01-12 1981-01-12 Semiconductor device Granted JPS56158455A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP367481A JPS56158455A (en) 1981-01-12 1981-01-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP367481A JPS56158455A (en) 1981-01-12 1981-01-12 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1437772A Division JPS5513137B2 (en) 1972-02-10 1972-02-10

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP12934585A Division JPS6163041A (en) 1985-06-14 1985-06-14 Manufacture of semiconductor device
JP12934685A Division JPS6163061A (en) 1985-06-14 1985-06-14 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56158455A true JPS56158455A (en) 1981-12-07
JPS6113383B2 JPS6113383B2 (en) 1986-04-12

Family

ID=11563963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP367481A Granted JPS56158455A (en) 1981-01-12 1981-01-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56158455A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066604A (en) * 1989-09-08 1991-11-19 Hyundai Electronics Industries Co., Ltd. Method for manufacturing a semiconductor device utilizing a self-aligned contact process
JPH065570U (en) * 1991-12-06 1994-01-25 株式会社セラミツク藍 Glass with legs

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066604A (en) * 1989-09-08 1991-11-19 Hyundai Electronics Industries Co., Ltd. Method for manufacturing a semiconductor device utilizing a self-aligned contact process
JPH065570U (en) * 1991-12-06 1994-01-25 株式会社セラミツク藍 Glass with legs

Also Published As

Publication number Publication date
JPS6113383B2 (en) 1986-04-12

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