JPS56158455A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56158455A JPS56158455A JP367481A JP367481A JPS56158455A JP S56158455 A JPS56158455 A JP S56158455A JP 367481 A JP367481 A JP 367481A JP 367481 A JP367481 A JP 367481A JP S56158455 A JPS56158455 A JP S56158455A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- junctions
- constitution
- openings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a highly reliable wiring path of the semiconductor device by a method wherein a semiconductor layer being connected to an impurity layer on the semiconductor substrate and extending over an insulating film is separated by P-N junctions. CONSTITUTION:A P type source 2, a drain 3 and an SiO2 layer 4 are provided on an N type Si substrate 1, and openings for electrodes are formed. An N type Si layer 5 is evaporated thereon, it is thermally oxidized to provide SiO2 layers 6, openings are formed selectively by photoetching method and a P type impurity of B, etc., is made to diffuse in the N type layer 5 to form a source electrode 7, a gate electrode 8 and a drain electrode 9. Accordingly the respective electrodes 7-9 are separated by P-N junctions. Then it is covered with a thermal oxide film 10. By this constitution, because the wiring paths 7-9 are covered with the strong and minute oxide film, contamination from the outside is hard, and extremely superior stability and high reliability can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP367481A JPS56158455A (en) | 1981-01-12 | 1981-01-12 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP367481A JPS56158455A (en) | 1981-01-12 | 1981-01-12 | Semiconductor device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1437772A Division JPS5513137B2 (en) | 1972-02-10 | 1972-02-10 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12934585A Division JPS6163041A (en) | 1985-06-14 | 1985-06-14 | Manufacture of semiconductor device |
JP12934685A Division JPS6163061A (en) | 1985-06-14 | 1985-06-14 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56158455A true JPS56158455A (en) | 1981-12-07 |
JPS6113383B2 JPS6113383B2 (en) | 1986-04-12 |
Family
ID=11563963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP367481A Granted JPS56158455A (en) | 1981-01-12 | 1981-01-12 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56158455A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5066604A (en) * | 1989-09-08 | 1991-11-19 | Hyundai Electronics Industries Co., Ltd. | Method for manufacturing a semiconductor device utilizing a self-aligned contact process |
JPH065570U (en) * | 1991-12-06 | 1994-01-25 | 株式会社セラミツク藍 | Glass with legs |
-
1981
- 1981-01-12 JP JP367481A patent/JPS56158455A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5066604A (en) * | 1989-09-08 | 1991-11-19 | Hyundai Electronics Industries Co., Ltd. | Method for manufacturing a semiconductor device utilizing a self-aligned contact process |
JPH065570U (en) * | 1991-12-06 | 1994-01-25 | 株式会社セラミツク藍 | Glass with legs |
Also Published As
Publication number | Publication date |
---|---|
JPS6113383B2 (en) | 1986-04-12 |
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