JPS5448182A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5448182A
JPS5448182A JP11486277A JP11486277A JPS5448182A JP S5448182 A JPS5448182 A JP S5448182A JP 11486277 A JP11486277 A JP 11486277A JP 11486277 A JP11486277 A JP 11486277A JP S5448182 A JPS5448182 A JP S5448182A
Authority
JP
Japan
Prior art keywords
poly
wiring
phosphorus
crystal silicon
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11486277A
Other languages
Japanese (ja)
Other versions
JPS6124827B2 (en
Inventor
Takashi Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11486277A priority Critical patent/JPS5448182A/en
Publication of JPS5448182A publication Critical patent/JPS5448182A/en
Publication of JPS6124827B2 publication Critical patent/JPS6124827B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE: To obtain a high-density semiconductor integrated circuit device by installing the insulating gate-type FET element on the semiconductor substrate and then providing the resistance element of the poly-crystal silicon on the transistor element region via an insulating film.
CONSTITUTION: Silicon dioxide film 11 of 1μm thick is formed on the surface of p-type silicon substrate 10 through the heat oxidation, and the prescribed area is removed selectively to form gate electrode 13 consisting of gate insulating film 12 of 1000Å thick and the first poly-crystal silicon layer. After this, the phosphorus diffusion is given at 1000°C to form source and drain regions 14a and 14b plus diffusion wiring layer 15. An opening is then drilled at the fixed area to reach the surface of substrate 10, and the second poly-crystal silicon layer is coated selectively into a fixed form. Furthermore, the low-density phosphorus is diffused at part 17 where the high resistance element of the second poly-crystal silcon is to be formed, and the high-density phosphorus is diffused at part 16 which is to be turned to the wiring. After this, the aluminum is evaporated to form the wiring between elements
COPYRIGHT: (C)1979,JPO&Japio
JP11486277A 1977-09-22 1977-09-22 Semiconductor integrated circuit device Granted JPS5448182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11486277A JPS5448182A (en) 1977-09-22 1977-09-22 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11486277A JPS5448182A (en) 1977-09-22 1977-09-22 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5448182A true JPS5448182A (en) 1979-04-16
JPS6124827B2 JPS6124827B2 (en) 1986-06-12

Family

ID=14648551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11486277A Granted JPS5448182A (en) 1977-09-22 1977-09-22 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5448182A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568864A (en) * 1979-07-02 1981-01-29 Nec Corp Semiconductor device
JPS6071153U (en) * 1983-10-20 1985-05-20 新日本無線株式会社 semiconductor equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568864A (en) * 1979-07-02 1981-01-29 Nec Corp Semiconductor device
JPS6071153U (en) * 1983-10-20 1985-05-20 新日本無線株式会社 semiconductor equipment

Also Published As

Publication number Publication date
JPS6124827B2 (en) 1986-06-12

Similar Documents

Publication Publication Date Title
JPS5727070A (en) Mos type semiconductor device
JPS5483386A (en) Semiconductor device
JPS54161894A (en) Manufacture of semiconductor device
JPS5660063A (en) Manufacture of semiconductor device
JPS5448182A (en) Semiconductor integrated circuit device
JPS56110264A (en) High withstand voltage mos transistor
JPS56125875A (en) Semiconductor integrated circuit device
JPS5522879A (en) Insulation gate type field effect semiconductor device
JPS5679472A (en) Preparing method of mos-type semiconductor device
JPS54114081A (en) Semiconductor integrated circuit device
JPS54101294A (en) Dummy mos semiconductor device
JPS57132352A (en) Complementary type metal oxide semiconductor integrated circuit device
JPS54104782A (en) Mos type semiconductor device
JPS5591827A (en) Production of semiconductor device
JPS5552262A (en) Mos semiconductor device
JPS568849A (en) Manufacture of semiconductor integrated circuit
JPS5688366A (en) Semiconductor device
JPS5457881A (en) Semiconductor device
JPS5789253A (en) Semiconductor device
JPS54134579A (en) Mis semiconductor device
JPS5518072A (en) Mos semiconductor device
JPS5721865A (en) Manufacture of semiconductor device
JPS566464A (en) Semiconductor device and manufacture thereof
JPS561572A (en) Manufacture of semiconductor device
JPS56133869A (en) Mos type semiconductor device and manufacture thereof