JPS5448182A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS5448182A JPS5448182A JP11486277A JP11486277A JPS5448182A JP S5448182 A JPS5448182 A JP S5448182A JP 11486277 A JP11486277 A JP 11486277A JP 11486277 A JP11486277 A JP 11486277A JP S5448182 A JPS5448182 A JP S5448182A
- Authority
- JP
- Japan
- Prior art keywords
- poly
- wiring
- phosphorus
- crystal silicon
- density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE: To obtain a high-density semiconductor integrated circuit device by installing the insulating gate-type FET element on the semiconductor substrate and then providing the resistance element of the poly-crystal silicon on the transistor element region via an insulating film.
CONSTITUTION: Silicon dioxide film 11 of 1μm thick is formed on the surface of p-type silicon substrate 10 through the heat oxidation, and the prescribed area is removed selectively to form gate electrode 13 consisting of gate insulating film 12 of 1000Å thick and the first poly-crystal silicon layer. After this, the phosphorus diffusion is given at 1000°C to form source and drain regions 14a and 14b plus diffusion wiring layer 15. An opening is then drilled at the fixed area to reach the surface of substrate 10, and the second poly-crystal silicon layer is coated selectively into a fixed form. Furthermore, the low-density phosphorus is diffused at part 17 where the high resistance element of the second poly-crystal silcon is to be formed, and the high-density phosphorus is diffused at part 16 which is to be turned to the wiring. After this, the aluminum is evaporated to form the wiring between elements
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11486277A JPS5448182A (en) | 1977-09-22 | 1977-09-22 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11486277A JPS5448182A (en) | 1977-09-22 | 1977-09-22 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5448182A true JPS5448182A (en) | 1979-04-16 |
JPS6124827B2 JPS6124827B2 (en) | 1986-06-12 |
Family
ID=14648551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11486277A Granted JPS5448182A (en) | 1977-09-22 | 1977-09-22 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5448182A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS568864A (en) * | 1979-07-02 | 1981-01-29 | Nec Corp | Semiconductor device |
JPS6071153U (en) * | 1983-10-20 | 1985-05-20 | 新日本無線株式会社 | semiconductor equipment |
-
1977
- 1977-09-22 JP JP11486277A patent/JPS5448182A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS568864A (en) * | 1979-07-02 | 1981-01-29 | Nec Corp | Semiconductor device |
JPS6071153U (en) * | 1983-10-20 | 1985-05-20 | 新日本無線株式会社 | semiconductor equipment |
Also Published As
Publication number | Publication date |
---|---|
JPS6124827B2 (en) | 1986-06-12 |
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