JPH03167852A - Package for semiconductor-element - Google Patents
Package for semiconductor-elementInfo
- Publication number
- JPH03167852A JPH03167852A JP1308596A JP30859689A JPH03167852A JP H03167852 A JPH03167852 A JP H03167852A JP 1308596 A JP1308596 A JP 1308596A JP 30859689 A JP30859689 A JP 30859689A JP H03167852 A JPH03167852 A JP H03167852A
- Authority
- JP
- Japan
- Prior art keywords
- external lead
- lead terminal
- lid
- semiconductor element
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 9
- 239000010949 copper Substances 0.000 claims abstract description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 9
- 229910052845 zircon Inorganic materials 0.000 claims abstract description 8
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 7
- 239000000956 alloy Substances 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims abstract description 7
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052863 mullite Inorganic materials 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 5
- XEEYBQQBJWHFJM-YPZZEJLDSA-N iron-54 Chemical compound [54Fe] XEEYBQQBJWHFJM-YPZZEJLDSA-N 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 claims 1
- 230000005291 magnetic effect Effects 0.000 abstract description 10
- 230000035699 permeability Effects 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 7
- 229910052742 iron Inorganic materials 0.000 abstract description 4
- 239000004020 conductor Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 3
- 238000000050 ionisation spectroscopy Methods 0.000 abstract 1
- 239000005394 sealing glass Substances 0.000 description 21
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000007789 sealing Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910000833 kovar Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 239000000945 filler Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910000174 eucryptite Inorganic materials 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- -1 iron (Fe) Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052844 willemite Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体素子を収容する半導体素子収納用パンケ
ージの改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to an improvement in a semiconductor device storage pancase that accommodates a semiconductor device.
（従来の技術）
従来、半導体素子を収容するためのパッケージ、特にガ
ラスの溶着によって封止するガラス封止型半導体素子収
納用パフケージは、絶縁基体と蓋体とから成り、内部に
半導体素子を収容する空所を有する絶縁容器と、該容器
内に収容される半導体素子を外部電気回路に電気的に接
続するための外部リード端子とから構威されており、絶
縁基体及び蓋体の相対向する主面に予め封止用のガラス
部材を被着形或すると共に、絶縁基体主面に外部リード
端子を固定し、半導体素子の各電極と外部リード端子と
をワイヤボンド接続した後、絶縁基体及び蓋体のそれぞ
に被着させた封止用のガラス部材を溶融一体化させるこ
とによって内部に半導体素子を気密に封止している。(Prior Art) Conventionally, a package for accommodating a semiconductor element, particularly a glass-sealed puff cage for accommodating a semiconductor element, which is sealed by glass welding, consists of an insulating base and a lid, and the semiconductor element is housed inside. The structure consists of an insulating container having a cavity, and an external lead terminal for electrically connecting a semiconductor element housed in the container to an external electric circuit, and an insulating base and a lid facing each other. A glass member for sealing is preliminarily applied to the main surface of the insulating substrate, external lead terminals are fixed to the main surface of the insulating substrate, and each electrode of the semiconductor element and the external lead terminal are connected by wire bonding, and then the insulating substrate and A semiconductor element is hermetically sealed inside by melting and integrating a sealing glass member attached to each lid.
（発明が解決しようとする課題）
しかし乍ら、この従来のガラス封止型半導体素子収納用
パッケージは通常、外部リード端子がコバール（２９
ｈｔχＮｉ−１６ ＷｔＸ Ｃｏ−５５ ＷｔＸＦｅ合
金）や４２ＡＩＩｏｙ（４２ ｔｉｔχＮｉ−５８ Ｗ
ｔＸ Ｆｅ合金）の導電性材料から戒っており、該コバ
ールや４２Ａ Ｉ Ｊｏｙ等は透磁率が高く、且つ導電
率が低いことから以下に述べる欠点を有する。(Problem to be Solved by the Invention) However, in this conventional glass-sealed package for storing semiconductor elements, the external lead terminals are usually made of Kovar (29
htχNi-16 WtX Co-55 WtXFe alloy) and 42AIIoy (42 titχNi-58 W
Kovar, 42A I Joy, and the like have high magnetic permeability and low conductivity, so they have the following disadvantages.
即ち、
■コハーノレや４２八１ Ｊｏｙは鉄（Ｆｅ）、−ｙケ
ノレ（Ｎｉ）、コバルト（Ｃｏ）といった強磁性体金属
のみから成っており、その透磁率は２５０〜７００ （
ＣＧＳ）と高い。そのためこのコバールや４２＾１１ｏ
ｙ等から成る外部リード端子に電流が流れると外部リー
ド端子中に透磁率に比例した大きな自己インダクタンス
が発生し、これが逆起電力を誘発してノイズとなると共
に、該ノイズが半導体素子に入力されて半導体素子に誤
動作を生じさせる、
■コバールや４２ＡＩＩｏｙはその導電率が３．０〜３
．５χ（ｒＡｃｓ）と低い。そのためこのコバールや４
２ＡＩＩｏｙ等から成る外部リード端子に信号を伝搬さ
せた場合、信号の伝搬速度が極めて遅いものとなり、高
速駆動を行う半導体素子はその収容が不可となってしま
う、
■半導体素子収納用パフケージの内部に収容する半導体
素子の高密度化、高集積化の進展に伴い、半導体素子の
電極数が大幅に増大しており、半導体素子の各電極を外
部電気回路に接続する外部リード端子の線幅も極めて細
くなってきている。そのため外部リード端子は上記■に
記載のコバールや４２ＡＩＩｏｙの導電率が低いことと
相俊って電気抵抗が極めて大きなものになってきており
、外部リード端子に信号を伝搬させると、該外部リード
端子の電気抵抗に起因して信号が大きく減衰し、内部に
収容する半導体素子に信号を正確に入力することができ
ず、半導体素子に誤動作を生じさせてしまう、
等の欠点を有していた。In other words, ■Kohanare and 4281 Joy are made only of ferromagnetic metals such as iron (Fe), -ykenore (Ni), and cobalt (Co), and their magnetic permeability is between 250 and 700 (
CGS) and high. Therefore, this Kobar and 42^11o
When a current flows through the external lead terminals such as y, a large self-inductance proportional to the magnetic permeability is generated in the external lead terminals, which induces back electromotive force and becomes noise, and the noise is input to the semiconductor element. Kovar and 42AIIoy have a conductivity of 3.0 to 3.
．． It is as low as 5χ(rAcs). Therefore, this Kobar and 4
When a signal is propagated to an external lead terminal made of 2AIIoy, etc., the propagation speed of the signal becomes extremely slow, making it impossible to accommodate semiconductor devices that drive at high speed. With the progress of higher density and higher integration of semiconductor devices, the number of electrodes on semiconductor devices has increased significantly, and the line width of external lead terminals that connect each electrode of semiconductor devices to external electric circuits has also become extremely large. It's getting thinner. Therefore, the electrical resistance of the external lead terminal has become extremely large due to the low conductivity of Kovar and 42AIIoy described in (2) above, and when a signal is propagated to the external lead terminal, the external lead terminal The signal is greatly attenuated due to the electrical resistance of the device, making it impossible to accurately input the signal to the semiconductor device housed inside the device, resulting in malfunction of the semiconductor device.
（発明の目的）
本発明は上記欠点に鑑み案出されたもので、その目的は
外部リード端子で発生するノイズ及び外部リード端子．
における信号の減衰を極小となし、内部に収容する半導
体素子への信号の入出力を確実に行うことを可能として
半導体素子を長期間にわたり正常、且つ安定に作動させ
ることができる半導体素子収納用パフケージを提供する
ことにある。(Object of the Invention) The present invention was devised in view of the above-mentioned drawbacks, and its purpose is to eliminate noise generated at the external lead terminal and to reduce noise generated at the external lead terminal.
A puff cage for storing semiconductor devices that minimizes signal attenuation in the semiconductor device and ensures reliable input/output of signals to the semiconductor devices housed inside, allowing the semiconductor devices to operate normally and stably for a long period of time. Our goal is to provide the following.
また本発明の他の目的は高速駆動を行う半導体素子を収
容することができる半導体素子収納用パソケージを提供
することにある。Another object of the present invention is to provide a semiconductor device storage path cage capable of accommodating semiconductor devices that are driven at high speed.
（課題を解決するこめの手段）
本発明は絶縁基体と蓋体とから戒り、内部に半導体素子
を収容するための空所を有する絶縁容器と、該容器内に
収容される半導体素子を外部電気回路に接続するための
外部リード端子とから成る半導体素子収納用パッケージ
において、前記絶縁基体及び蓋体を窒化アルミニウム質
焼結体、ムライト質焼結体、ジルコン質焼結体の少なく
とも１種で、外部リード端子をニッケル２８．５乃至２
９．５ＷｔＸ 、コハル｝ １５．５乃至１６．５Ｗｔ
Ｘ 、鉄５４．０乃至５６．０Ｗｔχの合金から成る板
状体の上下面に、該板状体の厚みに対し１０乃至２０χ
の厚みの銅板を接合させた金属体で形成したことを特徴
とするものである。(Further Means for Solving the Problems) The present invention includes an insulating container having a cavity for accommodating a semiconductor element inside the insulating base body and a lid body, and an insulating container having a cavity for accommodating a semiconductor element inside the container, and a semiconductor element housed in the container. In a package for housing a semiconductor element comprising an external lead terminal for connection to an electric circuit, the insulating base and the lid are made of at least one of an aluminum nitride sintered body, a mullite sintered body, and a zircon sintered body. , the external lead terminal is made of nickel 28.5 to 2
9.5WtX, Kohar} 15.5 to 16.5Wt
X, on the upper and lower surfaces of a plate-shaped body made of an alloy of iron 54.0 to 56.0 Wtχ, 10 to 20χ relative to the thickness of the plate-shaped body
It is characterized by being formed from a metal body joined with copper plates having a thickness of .
（実施例） 次に本発明を添付図面に基づき詳細に説明する。(Example) Next, the present invention will be explained in detail based on the accompanying drawings.
第１図及び第２図は本発明の半導体素子収納用パソケー
ジの一実施例を示し、１は絶縁基体、２は蓋体である。FIG. 1 and FIG. 2 show an embodiment of the semiconductor device housing passocage of the present invention, where 1 is an insulating base and 2 is a lid.
この絶縁基体１と蓋体２とにより絶縁容器３が構威され
る。The insulating base 1 and the lid 2 constitute an insulating container 3.
前記絶縁基体１及び蓋体２はそれぞれの中央部に半導体
素子を収容する空所を形成するための凹部が設けてあり
、絶縁基体ｌの凹部底面には半導体素子４が樹脂、ガラ
ス、ロウ剤等の接着剤を介し取着固定される。The insulating base 1 and the lid 2 are each provided with a recess in the center thereof to form a cavity for accommodating the semiconductor element, and the semiconductor element 4 is placed on the bottom of the recess of the insulating base 1 with resin, glass, or brazing agent. It is attached and fixed via adhesive such as.
前記絶縁基体１及び蓋体２は窒化アルミニウム質焼結体
、ムライト質焼結体、ジルコン質焼結体の少なくとも１
種から成り、第１図に示すような絶縁基体ｌ及び蓋体２
に対応した形状を有するプレス型内に、窒化アルミニウ
ム質焼結体の場合は窒化アルミニウム（ＡＩＮ） 、イ
フトリア（ＹｚＯ：＋＋等の原料粉末を、ムライト質焼
結体の場合はアルミナ（ Ａ１ｚＯｚ ） 、シリカ（
Ｓｉ（ｈ）等の原料粉末を、ジルコン質焼結体の場合は
酸化ジルコニウム（ＺｒＯｚ）、シリカ（Ｓｉ（ｈ）等
の原料粉末を充填させるとともに一定圧力を印加して威
形し、しかる後、戒形品を約１３００〜１８００℃の温
度で焼戒することによって製作される。The insulating base 1 and the lid 2 are made of at least one of an aluminum nitride sintered body, a mullite sintered body, and a zircon sintered body.
It consists of a seed, an insulating base l and a lid body 2 as shown in FIG.
In the case of an aluminum nitride sintered body, raw material powders such as aluminum nitride (AIN) and Iftoria (YzO:++) are placed in a press mold having a shape corresponding to silica(
In the case of a zircon-based sintered body, raw material powder such as Si(h) is filled with raw material powder such as zirconium oxide (ZrOz) or silica (Si(h)), and a constant pressure is applied to shape it. It is produced by burning a precept article at a temperature of approximately 1,300 to 1,800 degrees Celsius.
尚、前記絶縁基体１及び蓋体２を形或する窒化アルミニ
ウム質焼結体、ムライト質焼結体、ジルコン質焼結体は
その熱膨張係数が４０〜５０Ｘ１０−’／℃であり、後
述する封止用ガラス部材の熱膨張係数との関係において
絶縁基体１及び蓋体２と封止用ガラス部材間に大きな熱
膨張の差が生じることはない。The aluminum nitride sintered body, mullite sintered body, and zircon sintered body that form the insulating base 1 and the lid 2 have a thermal expansion coefficient of 40 to 50×10-'/°C, which will be described later. In relation to the coefficient of thermal expansion of the sealing glass member, there is no large difference in thermal expansion between the insulating base 1 and the lid 2 and the sealing glass member.
また前記絶縁基体１及び蓋体２にはその相対向する主面
に封止用のガラス部材６が予め被着形戒されており、該
絶縁基体ｌ及び蓋体２の各々に被着されている封止用ガ
ラス部材６を加熱溶融させ一体化させることにより絶縁
容器３内の半導体素子４を気密に封止する。Further, a glass member 6 for sealing is attached in advance to the main surfaces of the insulating base 1 and the lid 2 that face each other, and a glass member 6 for sealing is attached to each of the insulating base 1 and the lid 2. The semiconductor element 4 inside the insulating container 3 is hermetically sealed by heating and melting the sealing glass member 6 to be integrated.
前記絶縁基体ｌ及び蓋体２の相対向する主面に被着され
る封止用ガラス部材６は、例えばホウケイ酸鉛系ガラス
にフィラーを添加したものから威り、原料［，ｌＬての
酸化鉛（ ＰｂＯ ）７０．０ 〜９０．０れχ、酸化
ホウ素（ Ｂ２０：Ｉ ）１２．０〜１３．ＯＷｔ！
， シ’）力（ＳｉＯｚ）０．５ 〜３．Ｏ ＷｔＸ及
び７ ）ｌｉ ５ ナ（ＡＩ ２０３） ０．５〜３．
Ｏ ＷｔＸ ニ７イ−７−トしテチタン酸鉛（ＰｂＴｉ
Ｏｉ）、β−ユークリプタイト（ＬｉＪｈＳｉｚＯｓ）
、コージライト（ＭｇｚＡｌｔＳｉｓＯ＋ｓ）、ジ７
Ｌ／］ ン（ＺｒＳｉ０４）、酸化スズ（Ｓｎｕｇ）、
ウィレマイト（ＺｎｚＳｉＯｔ）等を４０〜５０ＶｏＩ
Ｘ添加混合すると共に、該混合粉末を９５０ −１１０
０℃の温度で加熱溶融させることによって製作される。The sealing glass member 6 adhered to the opposing main surfaces of the insulating base 1 and the lid 2 is made of, for example, lead borosilicate glass with a filler added, Lead (PbO) 70.0-90.0 χ, boron oxide (B20:I) 12.0-13. OWt!
, Si') Force (SiOz) 0.5 ~ 3. O WtX and 7) li 5 na (AI 203) 0.5-3.
O WtX Lead titanate (PbTi)
Oi), β-eucryptite (LiJhSizOs)
, Cordierite (MgzAltSisO+s), Di7
L/] (ZrSi04), tin oxide (Snug),
Willemite (ZnzSiOt) etc. 40-50VoI
While adding X, the mixed powder was heated to 950-110
It is manufactured by heating and melting at a temperature of 0°C.
このホウケイ酸鉛系のガラスはその熱膨張係数が４０
〜６０ｘｌＯ−’／ ”ｃである。This lead borosilicate glass has a coefficient of thermal expansion of 40
~60xlO-'/''c.
前記封止用ガラス部材６はその熱膨張係数が４０〜６０
Ｘ１０−’／ ’Ｃであり、絶縁基体１及び蓋体２の各
々の熱膨張係数と近似することから絶縁基体１及び蓋体
２の各々に被着されている封止用ガラス部材６を加熱溶
融させ一体化させることにより絶縁容器３内の半導体素
子４を気密に封止する際、絶縁基体１及び蓋体２と封止
用ガラス部材６との間には両者の熱膨張係数の相違に起
因する熱応力が発生することは殆どなく、絶縁基体１と
蓋体２とを封止用ガラス部材６を介し強固に接合するこ
とが可能となる。The sealing glass member 6 has a thermal expansion coefficient of 40 to 60.
X10-'/'C, which approximates the coefficient of thermal expansion of each of the insulating base 1 and the lid 2, so the sealing glass member 6 attached to each of the insulating base 1 and the lid 2 is heated. When the semiconductor element 4 in the insulating container 3 is hermetically sealed by melting and integrating, there is a difference in thermal expansion coefficient between the insulating base 1 and lid 2 and the sealing glass member 6. Almost no resulting thermal stress occurs, and it becomes possible to firmly join the insulating base 1 and the lid 2 via the sealing glass member 6.
尚、前記封止用ガラス部材６はフィラーを添加したホウ
ケイ酸鉛系ガラスの粉末に適当な有機溶剤、溶媒を添加
して得たガラスペーストを従来周知の厚膜手法を採用す
ることによって絶縁基体ｌ及び蓋体２の相対向する主面
に被着形成される。The sealing glass member 6 is made by applying a well-known thick film method to a glass paste obtained by adding a suitable organic solvent to a filler-added lead borosilicate glass powder to form an insulating substrate. 1 and the main surfaces of the lid body 2 that face each other.
また前記封止用ガラス部材６はフィラーを添加したホウ
ケイ酸鉛系のガラスに限定されるものではなく、熱膨張
係数が４０〜６０Ｘ１０−’／ ’Ｃの範囲のガラスで
あればいかなるものでも使用することができる。Further, the sealing glass member 6 is not limited to lead borosilicate glass containing filler, but any glass having a coefficient of thermal expansion in the range of 40 to 60X10-'/'C can be used. can do.
前記絶縁基体１と蓋体２との間には導電性材料から成る
外部リード端子５が配されており、該外部リード端子５
は半導体素子４の各電極がワイヤ７を介し電気的に接続
され、外部リード端子５を外部電気回路に接続すること
によって半導体素子４が外部電気回路に接続されること
となる。An external lead terminal 5 made of a conductive material is disposed between the insulating base 1 and the lid 2.
Each electrode of the semiconductor element 4 is electrically connected via the wire 7, and the semiconductor element 4 is connected to the external electric circuit by connecting the external lead terminal 5 to the external electric circuit.
前記外部リード端子５は絶縁基体１と蓋体２の相対向す
る主面に被着させた封止用ガラス部材６を溶融一体化さ
せ、絶縁容器３を気密封止する際に同時に絶縁基体１と
蓋体２との間に取着される。The external lead terminal 5 is formed by melting and integrating the sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2, and simultaneously sealing the insulating base 1 when the insulating container 3 is hermetically sealed. and the lid body 2.
前記外部リード端子５はニッケル２８．５乃至２９．５
Ｗｔ！ ， コハｎｔ ト１５．５乃至１６．５ＷｔＸ
，鉄５４．０乃至５６．ＯＷｔχの合金から戒る板状
体の上下面に、該板状体の厚みに対し１０乃至２０χの
厚みの銅板を接合させた金属体から威り、その透磁率は
約１８５ （ＣＧＳ）、導電率ハ２３．１！（ＩＡＣＳ
） 、熱膨張係数は約４９Ｘ１０−’／℃である。The external lead terminal 5 is made of nickel 28.5 to 29.5
Wt! , Kohant 15.5~16.5WtX
, iron 54.0 to 56. It is made of a metal body in which copper plates with a thickness of 10 to 20χ relative to the thickness of the plate body are bonded to the top and bottom surfaces of a plate body made of an alloy of OWtχ, and its magnetic permeability is approximately 185 (CGS) and conductivity. The rate is 23.1! (IACS
), the coefficient of thermal expansion is approximately 49X10-'/°C.
尚、前記外部リード端子５はニッケルーコバルトー鉄合
金（Ｎｉ−Ｃｏ−Ｆｅ合金）の板状体の上下面に銅（Ｃ
ｕ）板を圧接し、しかる後、これを圧延することによっ
て形成される。The external lead terminals 5 are made of copper (C
u) Formed by pressing plates together and then rolling them.
また前記外部リード端子５はニッケル（Ｎｉ）、コバル
ト（ｃｏ）、鉄（Ｆｅ）の量及び板状体と銅板の厚みが
上述の範囲を外れると外部リード端子５の透磁率が所望
する小さな値に、導電率が大きな値にならず、また熱膨
張係数も絶縁基体及び蓋体の熱膨張係数と合わなくなる
。そのため外部リード端子５はニッケル２８．５乃至２
９．５Ｗｔｌ ，コバルト１５．５乃至１６．５Ｗｔχ
、鉄５４．０乃至５６．ＯＷｔＸ （７）合金から成る
板状体の上下面に、該板状体の厚みに対し１０乃至２０
Ｘの厚みの銅板を接合させた金属体で形成することに限
定される。In addition, if the amount of nickel (Ni), cobalt (co), iron (Fe) and the thickness of the plate and copper plate of the external lead terminal 5 are out of the above-mentioned range, the magnetic permeability of the external lead terminal 5 will be a desired small value. In addition, the electrical conductivity does not reach a large value, and the thermal expansion coefficient does not match that of the insulating base and the lid. Therefore, the external lead terminal 5 is nickel 28.5 to 2.
9.5Wtl, cobalt 15.5 to 16.5Wtχ
, iron 54.0 to 56. OWtX (7) On the upper and lower surfaces of a plate-like body made of an alloy, 10 to 20
It is limited to forming the metal body by joining copper plates having a thickness of X.
前記外部リード端子５はその透磁率が１８５ （ＣＧＳ
）であり、透磁率が低いことから外部リード端子５に電
流が流れたとしても外部リード端子５中には大きな自己
インダクタンスが発生することはなく、その結果、前記
自己インダクタンスにより誘発される逆起電力に起因し
たノイズを極小となし、内部に収容する半導体素子４を
常に正常に作動させることができる。The external lead terminal 5 has a magnetic permeability of 185 (CGS
), and since the magnetic permeability is low, even if a current flows through the external lead terminal 5, a large self-inductance is not generated in the external lead terminal 5, and as a result, the back electromotive force induced by the self-inductance is Noise caused by electric power can be minimized, and the semiconductor element 4 housed inside can always operate normally.
また前記外部リード端子５はその導電率が２３．１χ（
ＩＡＣＳ）であり、電気を流し易いことから外部リード
端子５の信号伝搬速度を極めて速いものとなすことがで
き、ｗＡ縁容器３内に収容した半導体素子４を高速駆動
させたとしても半導体素子４と外部電気回路との間にお
ける信号の出し入れは常に安定、且つ確実となすことが
できる。Further, the external lead terminal 5 has a conductivity of 23.1χ(
IACS), and since it is easy to conduct electricity, the signal propagation speed of the external lead terminal 5 can be made extremely high, and even if the semiconductor element 4 housed in the wA edge container 3 is driven at high speed, the semiconductor element 4 The input/output of signals between the external electric circuit and the external electric circuit can always be performed stably and reliably.
また同時に外部リード端子５の導電率が高いことから外
部リード端子５の線幅が細くなったとしても外部リード
端子５の電気抵抗を低く抑えることができ、その結果、
外部リード端子５における信号の減衰を極小として内部
に収容する半導体素子４に外部電気回路から供給される
電気信号を正確に人力することができる。At the same time, since the conductivity of the external lead terminal 5 is high, even if the line width of the external lead terminal 5 becomes thin, the electrical resistance of the external lead terminal 5 can be kept low, and as a result,
By minimizing the attenuation of the signal at the external lead terminal 5, it is possible to accurately manually input the electric signal supplied from the external electric circuit to the semiconductor element 4 housed inside.
また更に前記外部リード端子５はその熱膨張係数が約４
９Ｘ１０−７／ ’Ｃであり、封止用ガラス部材６の熱
膨張係数と近似することから外部リード端子５を絶縁基
休１と蓋体２の間に封止用ガラス部材６を用いて固定す
る際、外部リード端子５と封止用ガラス部材６との間に
は両者の熱膨張係数の相違に起因する熱応力が発生する
ことはなく、外部リード端子５を封止用ガラス部材６で
強固に固定することも可能となる。Furthermore, the external lead terminal 5 has a coefficient of thermal expansion of about 4.
9X10-7/'C, which approximates the coefficient of thermal expansion of the sealing glass member 6, so the external lead terminal 5 is fixed between the insulating base 1 and the lid 2 using the sealing glass member 6. At this time, thermal stress due to the difference in coefficient of thermal expansion between the external lead terminals 5 and the sealing glass member 6 is not generated, and the external lead terminals 5 are connected to the sealing glass member 6. It also becomes possible to securely fix it.
か《して、この半導体素子収納用パソケージによれば絶
縁基体１の凹部底面に半導体素子４を取着固定するとと
もに該半導体素子４の各電極をボンディングワイヤ７に
より外部リード端子５に接続させ、しかる後、絶縁基体
１と蓋体２とを該絶縁基体１及び蓋体２の相対向する主
面に予め被着させておいた封止用ガラス部材６を溶融一
体化させることによって接合させ、これによって最終製
品としての半導体装置が完戒する。Thus, according to this path cage for storing semiconductor elements, the semiconductor element 4 is attached and fixed to the bottom surface of the recess of the insulating substrate 1, and each electrode of the semiconductor element 4 is connected to the external lead terminal 5 by the bonding wire 7. Thereafter, the insulating base 1 and the lid 2 are joined by melting and integrating the sealing glass member 6 that has been previously attached to the opposing main surfaces of the insulating base 1 and the lid 2, This completes the final product of the semiconductor device.
（発明の効果）
本発明の半導体素子収納用パッケージによれば、半導体
素子を収容するための絶縁容器を構戒する絶縁基体及び
蓋体を窒化アルミニウム質焼結体、ムライト質焼結体、
ジルコン質焼結体の少なくとも１種で、外部リード端子
をニソケル２８．５乃至２９．５Ｗｔχ、コバルト１５
．５乃至１６．５Ｗｔχ、鉄５４．０乃至５６．ＯＷｔ
χの合金から成る板状体の上下面に、該板状体の厚みに
対し１０乃至２０χの厚みの銅板を接合させた透磁率が
約１８５ （ＣＧＳ）、導電率が２３．ｌχ（Ｉ八ＣＳ
）、熱膨張係数が約４９Ｘ１０−’／ ”Ｃの金属体で
形戊したことから外部リード端子に電流を流したとして
も該外部リード端子中に大きな自己インダクタンスが発
生することはな《、その結果、前記自己インダクタンス
により誘発される逆起電力に起因したノイズを極小とな
し、内部に収容する半導体素子を常に正常に作動させる
ことが可能となる。(Effects of the Invention) According to the semiconductor device storage package of the present invention, the insulating base and the lid that constitute the insulating container for accommodating the semiconductor device are made of an aluminum nitride sintered body, a mullite sintered body,
At least one type of zircon sintered body, the external lead terminal is Nisokel 28.5 to 29.5Wtχ, Cobalt 15
．． 5 to 16.5 Wtχ, iron 54.0 to 56. OWt
Copper plates with a thickness of 10 to 20 χ relative to the thickness of the plate are bonded to the upper and lower surfaces of a plate-shaped body made of an alloy of χ, and the magnetic permeability is approximately 185 (CGS) and the electrical conductivity is 23. lχ(I8CS
), and the thermal expansion coefficient is approximately 49X10-'/''C, so even if a current is passed through the external lead terminal, a large self-inductance will not occur in the external lead terminal. As a result, the noise caused by the back electromotive force induced by the self-inductance can be minimized, and the semiconductor elements housed inside can always operate normally.
また外部リード端子の信号伝搬速度を極めて速いものと
なすことができ、絶縁容器内に収容した半導体素子を高
速駆動させたとしても半導体素子と外部電気回路との間
における信号の出し入れを常に安定、且つ確実となすこ
とが可能となる。In addition, the signal propagation speed of the external lead terminal can be made extremely fast, so that even if the semiconductor element housed in the insulating container is driven at high speed, the signal input and output between the semiconductor element and the external electric circuit is always stable. Moreover, it becomes possible to do so reliably and reliably.
更に外部リード端子の線幅が細くなったとしても外部リ
ード端子の電気抵抗を低く抑えることができ、その結果
、外部リード端子における信号の減衰を極小として内部
に収容する半導体素子に外部電気回路から供給される電
気信号を正確に入力することが可能となる。Furthermore, even if the line width of the external lead terminal becomes thinner, the electrical resistance of the external lead terminal can be kept low, and as a result, the attenuation of the signal at the external lead terminal is minimized, and the external electrical circuit is connected to the semiconductor element housed inside. It becomes possible to accurately input the supplied electrical signal.
また更に外部リード端子はその熱膨張係数が絶縁基体、
蓋体及び封止用ガラス部材の各々の熱膨張係数と近似し
、絶縁基体と蓋体この間に外部リード端子を挟み、各々
を封止用ガラス部材で取着接合したとしても絶縁基体及
び蓋体と封止用ガラス部材との間、外部リード端子と封
止用ガラス部材との間のいずれにも熱膨張係数の相違に
起因する熱応力は発生せず、すべてを強固に取着接合す
ることも可能となる。Furthermore, the coefficient of thermal expansion of the external lead terminal is
The coefficient of thermal expansion is similar to that of each of the lid and the sealing glass member, and even if an external lead terminal is sandwiched between the insulating base and the lid and each is attached and bonded with the sealing glass member, the insulating base and the lid are and the sealing glass member, and between the external lead terminal and the sealing glass member, all of which are firmly attached and bonded without generating thermal stress due to differences in thermal expansion coefficients. is also possible.
第１図は本発明の半導体素子収納用バ・７ケージの一実
施例を示す断面図、第２図は第１図に示すパ・ノケージ
の絶縁基体上面より見た平面図である。
ｌ ・・絶縁基体 ２ ・・蓋体
３ ・・絶縁容器
５ ・・外部リード端子
６ ・・封止用ガラス部材FIG. 1 is a cross-sectional view showing one embodiment of the semiconductor element housing bar cage of the present invention, and FIG. 2 is a plan view of the insulating base of the cage shown in FIG. 1, as viewed from above. l...Insulating base 2...Lid 3...Insulating container 5...External lead terminal 6...Glass member for sealing
Claims (1)
するための空所を有する絶縁容器と、該容器内に収容さ
れる半導体素子を外部電気回路に接続するための外部リ
ード端子とから成る半導体素子収納用パッケージにおい
て、前記絶縁基体及び蓋体を窒化アルミニウム質焼結体
、ムライト質焼結体、ジルコン質焼結体の少なくとも１
種で、外部リード端子をニッケル２８．５乃至２９．５
Ｗｔ％、コバルト１５．５乃至１６．５Ｗｔ％、鉄５４
．０乃至５６．０Ｗｔ％の合金から成る板状体の上下面
に、該板状体の厚みに対し１０乃至２０％の厚みの銅板
を接合させた金属体で形成したことを特徴とする半導体
素子収納用パッケージ。An insulating container consisting of an insulating base and a lid and having a cavity for accommodating a semiconductor element therein, and an external lead terminal for connecting the semiconductor element housed in the container to an external electric circuit. In the semiconductor element storage package, the insulating base and the lid are made of at least one of an aluminum nitride sintered body, a mullite sintered body, and a zircon sintered body.
Separately, the external lead terminal is nickel 28.5 to 29.5.
Wt%, cobalt 15.5 to 16.5 Wt%, iron 54
．． A semiconductor device characterized in that it is formed of a metal body in which copper plates having a thickness of 10 to 20% of the thickness of the plate-shaped body are bonded to the upper and lower surfaces of a plate-shaped body made of an alloy of 0 to 56.0 Wt%. Packaging for storage.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1308596A JP2736452B2 (en) | 1989-11-27 | 1989-11-27 | Package for storing semiconductor elements |
| US07/573,406 US5057905A (en) | 1989-08-25 | 1990-08-24 | Container package for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1308596A JP2736452B2 (en) | 1989-11-27 | 1989-11-27 | Package for storing semiconductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03167852A true JPH03167852A (en) | 1991-07-19 |
| JP2736452B2 JP2736452B2 (en) | 1998-04-02 |
Family
ID=17982944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1308596A Expired - Lifetime JP2736452B2 (en) | 1989-08-25 | 1989-11-27 | Package for storing semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2736452B2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6043851A (en) * | 1983-07-27 | 1985-03-08 | オリン コ−ポレ−シヨン | Coated metal lead frame substrate |
| JPS6243155A (en) * | 1985-08-21 | 1987-02-25 | Hitachi Ltd | Integrated circuit package |
| JPS63169056A (en) * | 1987-01-05 | 1988-07-13 | Kobe Steel Ltd | Lead frame material |
| JPS63314855A (en) * | 1987-06-17 | 1988-12-22 | Shinko Electric Ind Co Ltd | Ceramic package |
-
1989
- 1989-11-27 JP JP1308596A patent/JP2736452B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6043851A (en) * | 1983-07-27 | 1985-03-08 | オリン コ−ポレ−シヨン | Coated metal lead frame substrate |
| JPS6243155A (en) * | 1985-08-21 | 1987-02-25 | Hitachi Ltd | Integrated circuit package |
| JPS63169056A (en) * | 1987-01-05 | 1988-07-13 | Kobe Steel Ltd | Lead frame material |
| JPS63314855A (en) * | 1987-06-17 | 1988-12-22 | Shinko Electric Ind Co Ltd | Ceramic package |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2736452B2 (en) | 1998-04-02 |
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