JPH03173156A - Package for housing semiconductor element - Google Patents
Package for housing semiconductor elementInfo
- Publication number
- JPH03173156A JPH03173156A JP1312722A JP31272289A JPH03173156A JP H03173156 A JPH03173156 A JP H03173156A JP 1312722 A JP1312722 A JP 1312722A JP 31272289 A JP31272289 A JP 31272289A JP H03173156 A JPH03173156 A JP H03173156A
- Authority
- JP
- Japan
- Prior art keywords
- external lead
- lead terminal
- semiconductor element
- lid
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 239000011521 glass Substances 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052810 boron oxide Inorganic materials 0.000 claims abstract description 8
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 239000011734 sodium Substances 0.000 claims abstract description 7
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical class [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 claims description 5
- 229910001950 potassium oxide Inorganic materials 0.000 claims description 5
- 229910001948 sodium oxide Inorganic materials 0.000 claims description 5
- 238000007789 sealing Methods 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 8
- 239000000956 alloy Substances 0.000 abstract description 6
- 229910045601 alloy Inorganic materials 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 5
- 239000010949 copper Substances 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001374 Invar Inorganic materials 0.000 abstract description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 229910052700 potassium Inorganic materials 0.000 abstract description 2
- 239000011591 potassium Substances 0.000 abstract description 2
- 229910052708 sodium Inorganic materials 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract 1
- 230000000704 physical effect Effects 0.000 abstract 1
- 239000005394 sealing glass Substances 0.000 description 22
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 229910000833 kovar Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体素子を収容する半導体素子収納用パッケ
ージの改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a semiconductor element housing package that houses a semiconductor element.
（従来の技術）
従来、半導体素子を収容するためのパッケージ、特にガ
ラスの溶着によって封止するガラス封止型半導体素子収
納用パッケージは、絶縁基体と蓋体とから成り、内部に
半導体素子を収容する空所を有する絶縁容器と、該容器
内に収容される半導体素子を外部電気回路に電気的に接
続するための外部リード端子とから構成されており、絶
縁基体及び蓋体の相対向する主面に予め封止用のガラス
部材を被着形成すると共に、絶縁基体主面に外部リード
端子を固定し、半導体素子の各電極と外部リード端子と
をワイヤボンド接続した後、絶縁基体及び蓋体のそれぞ
に被着させた封止用のガラス部材を溶融一体止させるこ
とによって内部に半導体素子を気密に封止している。(Prior Art) Conventionally, a package for accommodating a semiconductor element, particularly a glass-sealed semiconductor element accommodating package sealed by glass welding, consists of an insulating base and a lid body, and the semiconductor element is housed inside. The device is composed of an insulating container having a cavity to open the container, and an external lead terminal for electrically connecting the semiconductor element housed in the container to an external electric circuit. After forming a glass member for sealing on the surface in advance, fixing external lead terminals to the main surface of the insulating substrate, and connecting each electrode of the semiconductor element and the external lead terminal by wire bonding, the insulating substrate and the lid are attached. The semiconductor element is hermetically sealed inside by melting and integrally sealing glass members attached to each of the parts.
（発明が解決しようとする課Ｂ）
しかし乍ら、この従来のガラス封止型半導体素子収納用
パッケージは通常、外部リード端子がコバール（２９し
χＮｉ−１６ＷｔχＣｏ−５５ＷｔＺＦｅ合金）や４２
Ａｌｌｏｙ（４２れχＮｉ−５８ＷｔχＦｅ合金）の導
電性材料から成っており、該コバールや４２ＡＩＩｏｙ
等は導電率が低いことから以下に述べる欠点を有する。(Problem B to be solved by the invention) However, in this conventional glass-sealed semiconductor element storage package, the external lead terminals are usually made of Kovar (29% χNi-16WtχCo-55WtZFe alloy) or 42%
It is made of conductive material such as Alloy (42xNi-58WtxFe alloy), and is made of conductive material such as Kovar and 42AIIoy.
etc. have the following disadvantages due to their low conductivity.
即ち、
■コバールや４２Ａ１１ｏｙはその導電率が３．０〜３
．５χ（ＩＡＣＳ）と低い、そのためこのコバールや４
２＾１１ｏν等から成る外部リード端子に信号を伝搬さ
せた場合、信号の伝搬速度が極めて遅いものとなり、高
速駆動を行う半導体素子はその収容が不可となってしま
う、
■半導体素子収納用パ・７ケージの内部に収容する半導
体素子の高密度化、高集積化の進展に伴い、半導体素子
の電極数が大幅に増大しており、半導体素子の各電極を
外部電気回路に接続する外部リード端子の線幅も極めて
細くなってきている。そのため外部リード端子は上記の
に記載のコバールや４２＾１１ｏｙの導電率が低いこと
と相俊って電気抵抗が極めて大きなものになってきてお
り、外部リード端子に信号を伝搬させると、該外部リー
ド端子の電気抵抗に起因して信号が大きく減衰し、内部
に収容する半導体素子に信号を正確に人力することがで
きず、半導体素子に誤動作を生じさせてしまう、
等の欠点を有していた。That is, ■ Kovar and 42A11oy have an electrical conductivity of 3.0 to 3.
．． As low as 5χ (IACS), this Kovar and 4
When a signal is propagated to an external lead terminal made of 2^11oν, etc., the propagation speed of the signal becomes extremely slow, making it impossible to accommodate semiconductor devices that drive at high speed. 7 With the progress of higher density and higher integration of semiconductor elements housed inside cages, the number of electrodes on semiconductor elements has increased significantly, and external lead terminals connect each electrode of semiconductor elements to an external electric circuit. The line width has also become extremely thin. Therefore, the electrical resistance of the external lead terminal has become extremely large due to the low conductivity of Kovar and 42^11oy described above, and when a signal is propagated to the external lead terminal, It has the disadvantage that the signal is greatly attenuated due to the electrical resistance of the lead terminal, making it impossible to accurately transmit the signal to the semiconductor element housed inside, which may cause the semiconductor element to malfunction. Ta.
（発明の目的）
本発明は上記欠点に鑑み案出されたもので、その目的は
外部リード端子における信号の減衰を極小となし、内部
に収容する半導体素子への信号の入出力を確実に行うこ
とを可能として半導体素子を長期間にわたり正常、且つ
安定に作動させることができる半導体素子収納用パッケ
ージを提供することにある。(Object of the Invention) The present invention was devised in view of the above drawbacks, and its purpose is to minimize the attenuation of signals at external lead terminals and ensure the input and output of signals to and from semiconductor elements housed inside. It is an object of the present invention to provide a package for storing a semiconductor element, which enables the semiconductor element to operate normally and stably for a long period of time.
また本発明の他の目的は高速駆動を行う半導体素子を収
容することができる半導体素子収納用パッケージを提供
することにある。Another object of the present invention is to provide a semiconductor device storage package that can accommodate semiconductor devices that operate at high speed.
（課題を解決するための手段）
本発明は内部に半導体素子を収容するための空所を有す
る絶縁容器に外部リード端子をガラス部材を介して取着
して成る半導体素子収納用パッケージにおいて、前記絶
縁容器を炭化珪素質焼結体で、外部リード端子を熱膨張
係数３０乃至４０ Ｘ １０− ’／℃、導電率２０χ
（ＩＡＣＳ）以上の金属で、ガラス部材をシリカ６５．
０乃至８０．ＯＷｔχ、酸化ホウ素１０．０乃至２５．
０Ｗｔ％、アルミナ１．０乃至１０．０ＷＬχ、ナトリ
ウム、カリウムの酸化物の少なくとも１種１８０乃至１
０．０ＷｔＸから成るガラスで形成したことを特徴とす
るものである。(Means for Solving the Problems) The present invention provides a package for storing a semiconductor element, which is formed by attaching an external lead terminal to an insulating container having a cavity for accommodating a semiconductor element through a glass member. The insulating container is made of silicon carbide sintered body, and the external lead terminal has a thermal expansion coefficient of 30 to 40 x 10-'/℃ and an electrical conductivity of 20χ.
(IACS) or higher, and the glass member is made of silica 65.
0 to 80. OWtχ, boron oxide 10.0 to 25.
0 Wt%, alumina 1.0 to 10.0 WLχ, at least one of sodium and potassium oxides 180 to 1
It is characterized in that it is made of glass made of 0.0 WtX.
（実施例） 次に本発明を添付図面に基づき詳細に説明する。(Example) Next, the present invention will be explained in detail based on the accompanying drawings.
第１図及び第２図は本発明の半導体素子収納用パッケー
ジの一実施例を示し、１は絶縁基体、２は蓋体である。FIGS. 1 and 2 show an embodiment of the semiconductor element storage package of the present invention, where 1 is an insulating base and 2 is a lid.
この絶縁基体ｌと蓋体２とにより絶縁容器３が構成され
る。The insulating base 1 and the lid 2 constitute an insulating container 3.
前記絶縁基体Ｉ及び蓋体２はそれぞれの中央部に半導体
素子を収容する空所を形成するための凹部が設けてあり
、絶縁基体ｌの凹部底面には半導体素子４が樹脂、ガラ
ス、ロウ剤等の接着剤を介し取着固定される。The insulating base I and the lid 2 are each provided with a recess in the center thereof to form a cavity for accommodating the semiconductor element, and the semiconductor element 4 is placed on the bottom of the recess of the insulating base I with resin, glass, or brazing agent. It is attached and fixed via adhesive such as.
前記絶縁基体ｌ及び蓋体２は炭化珪素質焼結体から成り
、第１図に示すような絶縁基体ｌ及び蓋体２に対応した
形状を有するプレス型内に、炭化珪素（ＳｉＣ） 、へ
ＩＪ ＩＪア（Ｂｅｄ）等の原料粉末を充填させ、しか
る後、これに一定圧力を印加しながら約２０００〜２２
００℃の温度で加熱焼成することによって製作される。The insulating base 1 and the lid 2 are made of a silicon carbide sintered body, and silicon carbide (SiC) is placed in a press mold having a shape corresponding to the insulating base 1 and the lid 2 as shown in FIG. Fill the raw material powder such as IJ IJA (Bed) and then heat it to about 2000 to 2200 ml while applying constant pressure.
It is manufactured by heating and firing at a temperature of 00°C.
尚、前記絶縁基体１及び蓋体２を形成する炭化珪素質焼
結体はその熱膨張係数が３０〜４０ＸｌＯ−’／℃であ
り、後述する封止用ガラス部材の熱膨張係数との関係に
おいて絶縁基体１及び蓋体２と封止用ガラス部材間に大
きな熱膨張の差が生じることはない。The silicon carbide sintered body forming the insulating substrate 1 and the lid 2 has a thermal expansion coefficient of 30 to 40XlO-'/°C, and in relation to the thermal expansion coefficient of the sealing glass member described later. A large difference in thermal expansion does not occur between the insulating base 1, the lid 2, and the sealing glass member.
また前記絶縁基体１及び蓋体２にはその相対向する主面
に封止用のガラス部材６が予め被着形成されており、該
絶縁基体１及び蓋体２の各々に被着されている封止用ガ
ラス部材６を加熱溶融させ一体化させることにより絶縁
容器３内の半導体素子４を気密に封止する。Further, a sealing glass member 6 is formed in advance on the opposing main surfaces of the insulating base 1 and the lid 2, and is adhered to each of the insulating base 1 and the lid 2. The semiconductor element 4 inside the insulating container 3 is hermetically sealed by heating and melting the sealing glass member 6 to integrate it.
前記絶縁基体１及び蓋体２の相対向する主面に被着され
る封止用ガラス部材６は、シリカ６５．０乃至８０．０
詩ｔχ、酸化ホウ素１Ｏ１０乃至２５．Ｏれχ、アルミ
ナ１．０乃至１０．０Ｗｔχ、ナトリウム、カリウムの
酸化物の少なくとも１種１．０乃至１０．０Ｗｔχから
成るガラスより成り、上記各成分を所定の値に秤量混合
すると共に、該混合粉末を約１５００〜１６００℃の温
度で加熱溶融させることによって製作される。The sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2 is made of silica 65.0 to 80.0.
Poem tχ, boron oxide 1O10 to 25. It is made of glass consisting of 1.0 to 10.0 Wtχ of alumina, 1.0 to 10.0 Wtχ of at least one of the oxides of sodium and potassium, and the above components are weighed and mixed to a predetermined value. It is manufactured by heating and melting mixed powder at a temperature of approximately 1,500 to 1,600°C.
このガラス部材６はその熱膨張係数が３０乃至４５×１
０−’／ ’Ｃである。This glass member 6 has a coefficient of thermal expansion of 30 to 45×1.
0-'/'C.
前記封止用ガラス部材６はその熱膨張係数が３０乃至４
５×１０−’／ ”ｃであり、絶１体１及び蓋体２の各
々の熱膨張係数と近似することから絶縁基体１及び蓋体
２の各々に被着されている封止用ガラス部材６を加熱溶
融させ一体化させることにより絶縁容器３内の半導体素
子４を気密に封止する際、絶縁基体１及び蓋体２と封止
用ガラス部材６との間には両者の熱膨張係数の相違に起
因する熱応力が発生することは殆どなく、絶縁基体ｌと
蓋体２とを封止用ガラス部材６を介し強固に接合するこ
とが可能となる。The sealing glass member 6 has a thermal expansion coefficient of 30 to 4.
5×10-'/''c, which approximates the coefficient of thermal expansion of each of the insulating base 1 and the lid 2. Therefore, the sealing glass member attached to each of the insulating base 1 and the lid 2 When the semiconductor element 4 in the insulating container 3 is hermetically sealed by heating and melting and integrating the insulating base 1 and the lid 2, there is a gap between the sealing glass member 6 and the thermal expansion coefficient of both. Almost no thermal stress is generated due to the difference between the two, and it becomes possible to firmly join the insulating base 1 and the lid 2 via the sealing glass member 6.
尚、前記封止用ガラス部材６はシリカ（ＳｉＯｚ）が６
５．０ＷｔＸ未満であるとガラスの結晶化が進んで絶縁
容器３の気密封止が困難とり、また８０．０ＷｔＸを越
えるとガラスの熱膨張が小さくなって絶縁基体１と蓋体
２の熱膨張と合わなくなることからシリカ（Ｓｉｎ、）
は６５．０〜Ｂ０．ＯＷｔχの範囲に限定される。Note that the sealing glass member 6 is made of silica (SiOz).
If it is less than 5.0 WtX, crystallization of the glass will progress and it will be difficult to hermetically seal the insulating container 3, and if it exceeds 80.0 WtX, the thermal expansion of the glass will be small and the thermal expansion of the insulating base 1 and the lid 2 will be reduced. Silica (Sin,) because it does not match with
is 65.0~B0. limited to the range of OWtχ.
また酸化ホウ素（Ｂ２Ｏ２）が１０．ＯＷｔχ未満であ
るとガラスの結晶化が進んで絶縁容器３の気密封止が困
難とり、また２５．０Ｗｔχを越えるとガラスの耐薬品
形が劣化して絶縁容器３の気密封止の信頼性が大きく低
下するため酸化ホウ素（ＢｚＯｚ）は１０．０乃至２５
．ＯＷｔχの範囲に限定される。Also, boron oxide (B2O2) is 10. If it is less than OWtχ, crystallization of the glass will progress and it will be difficult to hermetically seal the insulating container 3, and if it exceeds 25.0Wtχ, the chemical resistance of the glass will deteriorate and the reliability of hermetically sealing the insulating container 3 will deteriorate. Boron oxide (BzOz) decreases significantly from 10.0 to 25
．． limited to the range of OWtχ.
またアルミナ（Ａｈ（ｈ ）が１．ＯＷｔＸ未満である
とガラスの耐薬品性が劣化して絶縁容器３の気密封止の
信頼性が大きく低下し、また１０．ＯＷｔχを越えると
ガラスの熱膨張が小さくなって絶縁基体１と蓋体２の熱
膨張と合わなくなることからアルミナ（Ａ１２０３）は
１．０乃至１Ｏ１ＯＷｔχの範囲に限定される。Furthermore, if alumina (Ah (h)) is less than 1.OWtX, the chemical resistance of the glass will deteriorate and the reliability of hermetic sealing of the insulating container 3 will be greatly reduced, and if it exceeds 10.OWtχ, the thermal expansion of the glass will deteriorate. Alumina (A1203) is limited to a range of 1.0 to 1O1OWtχ because it becomes small and does not match the thermal expansion of the insulating base 1 and the lid 2.
またナトリウム、カリウムの酸化物が１．ＯＷｔＸ未満
であるとガラスを製作する際のガラスの溶融温度が大幅
に上がって作業性が著しく悪くなり、またｌＯ，０Ｗｔ
Ｘを越えるとガラスの耐薬品性が劣化して絶縁容器３の
気密封止の信頼性が大きく低下するためナトリウム、カ
リウムの酸化物は１．０乃至１０．０Ｗｔχの範囲に限
定される。Also, sodium and potassium oxides are 1. If it is less than OWt
If X is exceeded, the chemical resistance of the glass deteriorates and the reliability of hermetic sealing of the insulating container 3 is greatly reduced, so the amount of sodium and potassium oxides is limited to a range of 1.0 to 10.0 Wtχ.
前記封止用ガラス部材６は前述した成分から成るガラス
の粉末に適当な有機溶剤、溶媒を添加して得たガラスペ
ーストを従来周知の厚膜手法を採用することによって絶
縁基体１及び蓋体２の相対向する主面に被着形成される
。The sealing glass member 6 is formed by applying a well-known thick film method to a glass paste obtained by adding a suitable organic solvent to a glass powder made of the above-mentioned components to form an insulating base 1 and a lid 2. are adhered to and formed on opposing main surfaces of.
前記絶縁基体１と蓋体２との間には導電性材料から成る
外部リード端子５が配されており、該外部リード端子５
は半導体素子４の各電極がワイヤ７を介し電気的に接続
され、外部リート端子５を外部電気回路に接続すること
によって半導体素子４が外部電気回路に接続されること
となる。An external lead terminal 5 made of a conductive material is disposed between the insulating base 1 and the lid 2.
Each electrode of the semiconductor element 4 is electrically connected via the wire 7, and the semiconductor element 4 is connected to the external electric circuit by connecting the external lead terminal 5 to the external electric circuit.
前記外部リード端子５は絶縁基体１と蓋体２の相対向す
る主面に被着させた封止用ガラス部材６を溶融一体止さ
せ、絶縁容器３を気密封止する際に同時に絶縁基体ｌと
蓋体２との間に取着される。The external lead terminal 5 is formed by melting and integrally bonding the sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2, and simultaneously sealing the insulating base l when the insulating container 3 is hermetically sealed. and the lid body 2.
前記外部リード端子５はインバー合金（３６，５Ｗｔχ
Ｎｉ−６３，５ＷｔＸ Ｆｅ合金）の上下面に非磁性体
金属である銅（Ｃｕ）を接合させたもの等から成り、そ
の導電率は２０χ（ＩＡＣＳ）以上、熱膨張係数は３０
乃至４０×１０−’／ ”ｃである。The external lead terminal 5 is made of invar alloy (36.5Wtχ
It is made by bonding copper (Cu), a non-magnetic metal, to the upper and lower surfaces of Ni-63,5Wt
to 40×10-'/''c.
前記外部リード端子５はその導電率が２０χ（ＩＡＣＳ
）以上であり、電気を流し易いことから外部リード端子
５の信号伝搬速度を極めて速いものとなすことができ、
絶縁容器３内に収容した半導体素子４を高速駆動させた
としても半４体素子４と外部電気回路との間における信
号の出し入れは常に安定、且つ確実となすことができる
。The external lead terminal 5 has a conductivity of 20χ (IACS
), and since electricity can easily flow, the signal propagation speed of the external lead terminal 5 can be made extremely fast,
Even when the semiconductor element 4 housed in the insulating container 3 is driven at high speed, signals can always be input and output stably and reliably between the half-quad element 4 and the external electric circuit.
また外部リード端子５の導電率が高いことから外部リー
ド端子５の線幅が細くなったとしても外部リード端子５
の電気抵抗を低く抑えることができ、その結果、外部リ
ード端子５における信号の減衰を極小として内部に収容
する半導体素子４に外部電気回路から供給される電気信
号を正確に入力することができる。Furthermore, since the conductivity of the external lead terminal 5 is high, even if the line width of the external lead terminal 5 becomes thin, the external lead terminal 5
As a result, the attenuation of the signal at the external lead terminal 5 is minimized, and the electrical signal supplied from the external electrical circuit can be accurately input to the semiconductor element 4 housed inside.
更に前記外部リード端子５はその熱膨張係数が３０乃至
４０Ｘ１０−’／ ’Ｃであり、封止用ガラス部材６の
熱膨張係数と近似することから外部リード端子５を絶縁
基体１と蓋体２の間に封止用ガラス部材６を用いて固定
する際、外部リード端子５と封止用ガラス部材６との間
には両者の熱膨張係数の相違に起因する熱応力が発生す
ることはなく、外部リード端子５を封止用ガラス部材６
で強固に固定することも可能となる。Furthermore, the external lead terminal 5 has a thermal expansion coefficient of 30 to 40X10-'/'C, which is similar to the thermal expansion coefficient of the sealing glass member 6. When fixing using the sealing glass member 6 between the external lead terminals 5 and the sealing glass member 6, no thermal stress is generated between the external lead terminals 5 and the sealing glass member 6 due to the difference in coefficient of thermal expansion between the two. , a glass member 6 for sealing the external lead terminal 5
It can also be firmly fixed.
かくして、この半導体素子収納用パッケージによれば絶
縁基体１の四部底面に半導体素子４を取着固定するとと
もに該半導体素子４の各電極をボンディングワイヤ７に
より外部リード端子５に１妄続させ、しかる後、絶縁基
体１と蓋体２とを該絶縁基体ｌ及び蓋体２の相対向する
主面に予め被着させておいた封止用ガラス部材６を溶融
一体止させることによって接合させ、これによって最終
製品としての半導体装置が完成する。Thus, according to this semiconductor element storage package, the semiconductor element 4 is attached and fixed to the bottom surface of the four parts of the insulating substrate 1, and each electrode of the semiconductor element 4 is connected to the external lead terminal 5 by the bonding wire 7. After that, the insulating base 1 and the lid 2 are joined by melting and integrally bonding the sealing glass member 6 which has been previously applied to the opposing main surfaces of the insulating base 1 and the lid 2. As a result, a semiconductor device as a final product is completed.
（発明の効果）
本発明の半導体素子収納用パッケージによれば、絶縁基
体及び蓋体を炭化珪素質焼結体で、外部リード端子を熱
膨張係数が３０乃至４０×１０−’／ ’ｃ、導電率が
２０χ（ＩＡＣＳ）以上の金属で、ガラス部材をシリカ
６５．０乃至８０．ＯＷｔχ、酸化ホウ素１０．０乃至
２５．０れχ−、アルミナ１．０乃至１０．ＯＷｔχ、
ナトリウム、カリウムの酸化物の少なくとも１種１．０
乃至１０．０れχから成るガラスで形成したことから外
部リード端子の信号伝搬速度を極めて速いものとなすこ
とができ、絶縁容器内に収容した半導体素子を高速駆動
させたとしても半導体素子と外部電気回路との間におけ
る信号の出し入れを常に安定、且つ確実となすことが可
能となる。(Effects of the Invention) According to the semiconductor device storage package of the present invention, the insulating base and the lid are made of silicon carbide sintered body, and the external lead terminal has a thermal expansion coefficient of 30 to 40×10-'/'c. A metal with an electrical conductivity of 20χ (IACS) or more, and a glass member made of silica 65.0 to 80. OWtχ, boron oxide 10.0 to 25.0 χ-, alumina 1.0 to 10. OWtχ,
At least one of sodium and potassium oxides 1.0
Since the external lead terminal is made of glass with a coefficient of It becomes possible to always stably and reliably transfer signals into and out of the electric circuit.
また外部リード端子の線幅が細くなったとしても外部リ
ード端子の電気抵抗を低く抑えることができ、その結果
、外部リード端子における信号の減衰を極小として内部
に収容する半導体素子に外部電気回路から供給される電
気信号を正確に入力することが可能となる。In addition, even if the line width of the external lead terminal becomes thinner, the electrical resistance of the external lead terminal can be kept low, and as a result, the signal attenuation at the external lead terminal is minimized, and the external electrical circuit is connected to the semiconductor element housed inside. It becomes possible to accurately input the supplied electrical signal.
更に外部リード端子はその熱膨張係数が絶縁基体、蓋体
及び封止用ガラス部材の各々の熱膨張係数と近領し、絶
縁基体と蓋体との間に外部リード端子を挟み、各々を封
止用ガラス部材で取着接合したとしても絶縁基体及び蓋
体と封止用ガラス部材との間、外部リード端子と封止用
ガラス部材との間のいずれにも熱膨張係数の相違に起因
する熱応力は発生せず、すべてを強固に取着接合するこ
とも可能となる。Furthermore, the coefficient of thermal expansion of the external lead terminal is close to that of each of the insulating base, the lid, and the sealing glass member, and the external lead terminal is sandwiched between the insulating base and the lid, and each is sealed. Even if they are attached and bonded using a sealing glass member, there may be differences in thermal expansion coefficients between the insulating base and lid and the sealing glass member, and between the external lead terminal and the sealing glass member. No thermal stress is generated, and everything can be firmly attached and joined.
第１図は本発明の半導体素子収納用パッケージの一実施
例を示す断面図、第２図は第１図に示すパッケージの絶
縁基体上面より見た平面図である。
１ ・・絶縁基体 ２ ・・蓋体
３ ・・絶縁容器
５ ・・外部リード端子
６ ・・封止用ガラス部材FIG. 1 is a sectional view showing an embodiment of the semiconductor element storage package of the present invention, and FIG. 2 is a plan view of the package shown in FIG. 1, viewed from the top surface of the insulating base. 1...Insulating base 2...Lid 3...Insulating container 5...External lead terminal 6...Glass member for sealing
Claims (1)
器に外部リード端子をガラス部材を介して取着して成る
半導体素子収納用パッケージにおいて、前記絶縁容器を
炭化珪素質焼結体で、外部リード端子を熱膨張係数３０
乃至４０×１０＾−＾７／℃、導電率２０％（ＩＡＣＳ
）以上の金属で、ガラス部材をシリカ６５．０乃至８０
．０Ｗｔ％、酸化ホウ素１０．０乃至２５．０Ｗｔ％、
アルミナ１．０乃至１０．０Ｗｔ％、ナトリウム、カリ
ウムの酸化物の少なくとも１種１．０乃至１０．０Ｗｔ
％から成るガラスで形成したことを特徴とする半導体素
子収納用パッケージ。In a package for storing a semiconductor element, the insulating container is made of a silicon carbide sintered body, and the external lead terminal is attached via a glass member to an insulating container having a cavity for accommodating the semiconductor element inside. The lead terminal has a thermal expansion coefficient of 30
to 40×10^-^7/℃, conductivity 20% (IACS
) or above, and the glass member is made of silica 65.0 to 80
．． 0 Wt%, boron oxide 10.0 to 25.0 Wt%,
Alumina 1.0 to 10.0 Wt%, at least one of sodium and potassium oxides 1.0 to 10.0 Wt%
A package for storing semiconductor elements, characterized in that it is formed of glass consisting of %.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1312722A JP2736459B2 (en) | 1989-11-30 | 1989-11-30 | Package for storing semiconductor elements |
| US07/574,472 US5168126A (en) | 1989-08-25 | 1990-08-27 | Container package for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1312722A JP2736459B2 (en) | 1989-11-30 | 1989-11-30 | Package for storing semiconductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03173156A true JPH03173156A (en) | 1991-07-26 |
| JP2736459B2 JP2736459B2 (en) | 1998-04-02 |
Family
ID=18032633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1312722A Expired - Lifetime JP2736459B2 (en) | 1989-08-25 | 1989-11-30 | Package for storing semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2736459B2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5851405A (en) * | 1981-09-12 | 1983-03-26 | 京セラ株式会社 | Method of producing electrically insulating silicon carbide sintered material |
| JPS6243155A (en) * | 1985-08-21 | 1987-02-25 | Hitachi Ltd | Integrated circuit package |
| JPS6265954A (en) * | 1985-09-18 | 1987-03-25 | Nippon Electric Glass Co Ltd | Borosilicate glass for sealing alumina |
-
1989
- 1989-11-30 JP JP1312722A patent/JP2736459B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5851405A (en) * | 1981-09-12 | 1983-03-26 | 京セラ株式会社 | Method of producing electrically insulating silicon carbide sintered material |
| JPS6243155A (en) * | 1985-08-21 | 1987-02-25 | Hitachi Ltd | Integrated circuit package |
| JPS6265954A (en) * | 1985-09-18 | 1987-03-25 | Nippon Electric Glass Co Ltd | Borosilicate glass for sealing alumina |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2736459B2 (en) | 1998-04-02 |
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