JP7223075B2 - 熱質量が小さい加圧チャンバ - Google Patents
熱質量が小さい加圧チャンバ Download PDFInfo
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- JP7223075B2 JP7223075B2 JP2021123267A JP2021123267A JP7223075B2 JP 7223075 B2 JP7223075 B2 JP 7223075B2 JP 2021123267 A JP2021123267 A JP 2021123267A JP 2021123267 A JP2021123267 A JP 2021123267A JP 7223075 B2 JP7223075 B2 JP 7223075B2
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- 238000012545 processing Methods 0.000 claims description 123
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- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims 3
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 30
- 239000002904 solvent Substances 0.000 description 24
- 238000012546 transfer Methods 0.000 description 24
- 239000007788 liquid Substances 0.000 description 20
- 229910002092 carbon dioxide Inorganic materials 0.000 description 15
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- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
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- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
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- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
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- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
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- 239000001569 carbon dioxide Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- 239000008367 deionised water Substances 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
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- 238000003672 processing method Methods 0.000 description 1
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- 239000012858 resilient material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/14—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects using gases or vapours other than air or steam, e.g. inert gases
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02101—Cleaning only involving supercritical fluids
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H01L21/67098—Apparatus for thermal treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H—ELECTRICITY
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- H—ELECTRICITY
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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Description
半導体デバイスの洗浄においては、多くの場合、液体及び固体の汚染物質を基板の表面から除去し、ひいては表面を清浄にしておくことが望ましい。湿式洗浄プロセスは概して、水性洗浄溶液などの洗浄液の使用を伴う。基板の湿式洗浄後には、多くの場合、洗浄チャンバ内の基板の表面から洗浄液を除去することが望ましい。
Claims (14)
- 水平面に対してチルト配向で配置されたチャンバ本体、
前記チャンバ本体に隣接するドア、
前記チャンバ本体内に配置されたライナであって、前記チャンバ本体と共に処理空間を画定するライナ、
前記ドアに連結され、前記処理空間内に出入りするように動くように構成された基板支持体であって、加熱要素を含む基板支持体、
前記ライナと前記チャンバ本体との間に介在させられ、前記処理空間の長手軸に沿って延在する1つ以上の断熱要素であって、前記1つ以上の断熱要素のうちの少なくとも1つは、前記基板支持体が前記処理空間内に配置されている際に、前記基板支持体の前記加熱要素と前記チャンバ本体との間に配置され、前記ライナが前記断熱要素により覆われて前記断熱要素を前記処理空間から分離するように、前記ライナと前記断熱要素とが接触状態にある、1つ以上の断熱要素、及び
前記処理空間内に移動可能に配置されたバッフルプレート
を備える処理チャンバ。 - 前記ライナが2mmから5mmの厚さを有する、請求項1に記載の処理チャンバ。
- 前記基板支持体は、横方向に移動して前記処理空間に出入りするように動作可能であり、前記ドアは、横方向に移動して前記チャンバ本体に近づくように及び離れるように動作可能である、請求項1に記載の処理チャンバ。
- 前記ライナの間の、前記処理空間の端から端までの距離が約5cm未満である、請求項1に記載の処理チャンバ。
- 前記1つ以上の断熱要素のうちの少なくとも1つが、0.1インチから1.0インチの厚さを有する、請求項1に記載の処理チャンバ。
- 前記1つ以上の断熱要素のうちの少なくとも1つがセラミックである、請求項5に記載の処理チャンバ。
- 前記ライナ及び前記チャンバ本体により画定される前記処理空間が、2リットル未満である、請求項1に記載の処理チャンバ。
- 前記バッフルプレートが、前記処理空間内に水平に配置され、かつアクチュエータに連結されており、前記アクチュエータは、前記基板支持体が前記処理空間内にある際に、前記処理空間内において前記バッフルプレートを前記基板支持体に近づけるように及び離すように動かすよう動作可能である、請求項7に記載の処理チャンバ。
- 水平面に対してチルト配向で配置されたチャンバ本体であって、該チャンバ本体のライナによって画定される処理空間に対する出入りのため、該チャンバ本体に形成された開口を有する、チャンバ本体、
前記チャンバ本体内に配置された前記ライナ、
前記処理空間内に配置されたバッフルプレートであって、該バッフルプレートを前記処理空間内において上昇位置と下降位置との間で動かすためにアクチュエータに連結された、バッフルプレート、
前記チャンバ本体に移動可能に連結されるドアであって、開放位置と閉鎖位置との間で並進移動するように構成されたドア、
前記ドアに連結される基板支持体であって、該基板支持体は、前記処理空間外の第1の位置と、前記処理空間内の第2の位置との間で、前記ドアと共に並進移動するように構成されており、前記バッフルプレートは前記基板支持体とは関係なく移動可能であり、前記基板支持体は、基板処理中において前記第2の位置に留まる、基板支持体、及び
前記ライナと前記チャンバ本体との間に介在させられ、前記処理空間の長手軸に沿って延在する断熱要素であって、前記ライナが前記断熱要素により覆われて前記断熱要素を前記処理空間から分離するように、前記ライナと前記断熱要素とが接触状態にある、断熱要素
を備える処理チャンバ。 - 前記ライナが2mmから5mmの厚さを有する、請求項9に記載の処理チャンバ。
- 前記断熱要素は、0.1インチから1.0インチの厚さを有し、前記ライナを前記チャンバ本体から断熱するように配置されている、請求項9に記載の処理チャンバ。
- 前記断熱要素がセラミックである、請求項9に記載の処理チャンバ。
- 前記ライナ及び前記チャンバ本体により画定される前記処理空間が、2リットル未満である、請求項9に記載の処理チャンバ。
- 水平面に対してチルト配向で配置されたチャンバ本体であって、該チャンバ本体のライナによって画定される処理空間に対する出入りのため、該チャンバ本体に形成された開口を有する、チャンバ本体、
前記チャンバ本体内に配置された前記ライナ、
前記処理空間内に配置されたバッフルプレートであって、該バッフルプレートは、該バッフルプレートを前記処理空間内で動かすためにアクチュエータに連結されており、前記アクチュエータは、基板支持体に近接した処理位置と、前記基板支持体から離れた上昇位置との間で、前記バッフルプレートを選択的に移動させるように動作可能である、バッフルプレート、
前記チャンバ本体に移動可能に連結されるドアであって、開放位置と閉鎖位置との間で並進移動するように構成されたドア、
前記ドアに連結され加熱要素を含む前記基板支持体であって、該基板支持体は、前記処理空間外の第1の位置と、前記処理空間内の第2の位置との間で、前記ドアと共に並進移動するように構成されており、前記バッフルプレートは前記基板支持体とは関係なく移動可能であり、前記基板支持体は、基板処理中において前記第2の位置に留まる、基板支持体、及び
前記ライナと前記チャンバ本体との間に介在させられ、前記処理空間の長手軸に沿って延在するセラミック製の断熱要素であって、前記断熱要素は、前記基板支持体が前記処理空間内にある際に、前記基板支持体の前記加熱要素と前記チャンバ本体との間に配置され、前記ライナが前記断熱要素により覆われて前記断熱要素を前記処理空間から分離するように、前記ライナと前記断熱要素とが接触状態にある、断熱要素
を備える処理チャンバ。
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US11424137B2 (en) | 2022-08-23 |
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US20170098555A1 (en) | 2017-04-06 |
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US20190273002A1 (en) | 2019-09-05 |
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