JP7301575B2 - 基板処理方法、記憶媒体及び基板処理装置 - Google Patents
基板処理方法、記憶媒体及び基板処理装置 Download PDFInfo
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02041—Cleaning
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B3/00—Drying solid materials or objects by processes involving the application of heat
- F26B3/28—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun
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- H01L21/02052—Wet cleaning only
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67017—Apparatus for fluid treatment
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67248—Temperature monitoring
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Description
基板の表面に保護液の液膜を形成することと、
前記基板を超臨界流体を用いて乾燥させて前記基板の表面から前記保護液を除去することと、
前記基板を乾燥させた後、前記基板の表面に残存するパーティクルを除去することと、を備えた、基板処理方法、
が提供される。
基板処理装置の動作を制御するためのコンピュータにより実行されたときに、前記コンピュータが前記基板処理装置を制御して上述の基板処理方法を実行させるプログラムが記録された記憶媒体、
が提供される。
基板の表面に保護液の液膜を形成する液膜形成部と、
前記基板を超臨界流体を用いて乾燥させて前記基板の表面から前記保護液を除去する乾燥処理部と、
前記乾燥処理部において前記基板の表面に残存するパーティクルを除去するパーティクル処理部と、を備えた、基板処理装置、
が提供される。
流量調整弁27は、超臨界流体供給タンク24から乾燥処理チャンバ162Bに供給される超臨界流体の流量を調節するためのものである。流量調整弁27は、例えばニードルバルブなどから構成され、超臨界流体供給タンク24からの超臨界CO2の供給を遮断する遮断部としても兼用されていてもよい。
この場合、超臨界流体供給ライン22に設けられた開閉弁25を閉じるとともに、排出ライン23に設けられた減圧弁28の開度を大きくする。そして、乾燥処理チャンバ162B内の圧力を、大気圧まで下げる。このことにより、乾燥処理チャンバ162B内の超臨界流体は気体状態に変化する。このため、図5Dに示すように、パターン倒壊を生じさせることなく、ウエハWの表面を乾燥させることができる。
- ウエハWの表面(ウエハWの表面に形成されたパターンの凹部内も含む)上にある保護液が、超臨界乾燥処理ユニット16B内においてウエハWに供給される超臨界流体で容易に置換されること。
- 液処理ユニット16Aから超臨界乾燥処理ユニット16Bに搬送される間に揮発により容易に消失しないこと。(保護液が超臨界流体で置換される前に、パターンが露出すると、保護液の表面張力によりパターンが倒壊するおそれがある。)
- 保護液を供給する前の工程がリンス工程である場合、ウエハWの表面(ウエハWの表面に形成されたパターンの凹部内も含む)上にあるリンス液(例えば純水)が、保護液により容易に置換されること。
高温ガスに乾燥空気を用いる場合には、高温ガスに水分が含まれることを抑制できる。このことにより、ウエハWの表面に残存しているパーティクルPを効率良く揮発させることができる。また、高温ガスに不活性ガスを用いる場合には、高温ガスに水分や酸素が含まれることを抑制できる。このため、乾燥空気の場合と同様にパーティクルPを効率良く揮発させることができるとともに、ウエハWの表面に形成されたパターンを形成する金属材料が酸化されて、パターンによって構成されるデバイス特性が低下することを抑制できる。
16A 液処理ユニット
16B 超臨界乾燥処理ユニット
162B 乾燥処理チャンバ
16C パーティクル処理ユニット
161C パーティクル処理チャンバ
40 ガス供給部
46 ガス排出部
50 チャンバ用ヒータ
60 紫外線ランプ
70 赤外線ランプ
80 ノズル部
100 ガスクラスター
L 保護液
P パーティクル
W ウエハ
Claims (4)
- 基板の表面に保護液の液膜を形成することと、
前記基板を超臨界流体を用いて乾燥させて前記基板の表面から前記保護液を除去することと、
前記基板を乾燥させた後、前記基板の表面に残存するパーティクルを除去することと、を備え、
前記基板を乾燥させる際、前記基板は乾燥処理チャンバに収容され、
前記基板を乾燥させた後、前記基板は、前記乾燥処理チャンバからパーティクル処理チャンバに搬送され、
前記パーティクルを除去する際、前記基板は前記パーティクル処理チャンバに収容され、前記パーティクル処理チャンバ内の圧力よりも高い圧力を有する領域から前記パーティクル処理チャンバに供給されたガスにより、前記基板にガスクラスターが照射される、基板処理方法。 - 基板処理装置の動作を制御するためのコンピュータにより実行されたときに、前記コンピュータが前記基板処理装置を制御して請求項1に記載の基板処理方法を実行させるプログラムが記録された記憶媒体。
- 基板の表面に保護液の液膜を形成する液膜形成部と、
乾燥処理チャンバを有する乾燥処理部であって、前記乾燥処理チャンバに収容された前記基板を超臨界流体を用いて乾燥させて前記基板の表面から前記保護液を除去する乾燥処理部と、
パーティクル処理チャンバを有するパーティクル処理部であって、前記パーティクル処理チャンバに収容された前記基板の表面に残存するパーティクルを除去するパーティクル処理部と、
前記乾燥処理部において乾燥させた前記基板を前記パーティクル処理部に搬送する搬送装置と、を備え、
前記パーティクル処理部は、前記パーティクル処理チャンバ内の圧力よりも高い圧力を有する領域から前記パーティクル処理チャンバに供給されたガスにより、前記基板にガスクラスターを照射するガスクラスター照射部を有している、基板処理装置。 - 前記乾燥処理部は、前記乾燥処理チャンバに高温ガスを供給するガス供給部と、前記乾燥処理チャンバから前記高温ガスを排出するガス排出部と、を有している、請求項3に記載の基板処理装置。
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TW108115326A TWI797328B (zh) | 2018-05-15 | 2019-05-03 | 基板處理方法、記憶媒體及基板處理裝置 |
KR1020190056285A KR102651514B1 (ko) | 2018-05-15 | 2019-05-14 | 기판 처리 방법, 기억 매체 및 기판 처리 장치 |
US16/411,404 US11201050B2 (en) | 2018-05-15 | 2019-05-14 | Substrate processing method, recording medium and substrate processing apparatus |
CN201910402577.8A CN110491770B (zh) | 2018-05-15 | 2019-05-15 | 基板处理方法、存储介质以及基板处理装置 |
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JP6925219B2 (ja) * | 2017-09-29 | 2021-08-25 | 東京エレクトロン株式会社 | 基板処理装置 |
KR102225957B1 (ko) * | 2018-09-12 | 2021-03-11 | 세메스 주식회사 | 기판 처리 장치 |
KR102666133B1 (ko) * | 2019-01-14 | 2024-05-17 | 삼성전자주식회사 | 초임계 건조 장치 및 그를 이용한 기판 건조방법 |
JP2021034561A (ja) * | 2019-08-23 | 2021-03-01 | キオクシア株式会社 | 半導体製造装置 |
US11688630B2 (en) * | 2021-03-15 | 2023-06-27 | Micron Technology, Inc. | Shallow trench isolation filling structure in semiconductor device |
WO2022224822A1 (ja) * | 2021-04-20 | 2022-10-27 | 東京エレクトロン株式会社 | 基板処理装置及び固化膜除去方法 |
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