JP5450494B2 - 半導体基板の超臨界乾燥方法 - Google Patents
半導体基板の超臨界乾燥方法 Download PDFInfo
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- JP5450494B2 JP5450494B2 JP2011068537A JP2011068537A JP5450494B2 JP 5450494 B2 JP5450494 B2 JP 5450494B2 JP 2011068537 A JP2011068537 A JP 2011068537A JP 2011068537 A JP2011068537 A JP 2011068537A JP 5450494 B2 JP5450494 B2 JP 5450494B2
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- semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02101—Cleaning only involving supercritical fluids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
Description
なお、降圧時のチャンバ210内の温度Tは、75℃以上、かつIPAの臨界温度(235.6℃)未満であれば多少変動してもよい。
202、203 冷却器
204 昇圧ポンプ
205 ヒータ
206、207 バルブ
208 気液分離器
210 チャンバ
Claims (4)
- 金属膜が形成された半導体基板を、表面がアルコールで濡れた状態でチャンバ内に導入する工程と、
前記チャンバ内に二酸化炭素の超臨界流体を供給する工程と、
前記チャンバ内の温度を97℃以上かつ前記アルコールの臨界温度未満の所定温度にして、前記半導体基板上の前記アルコールを前記超臨界流体に置換する工程と、
前記チャンバ内の温度を前記所定温度に維持しながら、前記チャンバから前記超臨界流体及び前記アルコールを排出し、前記チャンバ内の圧力を下げる工程と、
を備え、
前記チャンバ内の圧力を下げる工程において、凝集したアルコールを気化させる半導体基板の超臨界乾燥方法。 - 薬液を用いて前記半導体基板を洗浄し、
前記半導体基板の洗浄後に、純水を用いて前記半導体基板をリンスし、
前記純水を用いた前記半導体基板のリンス後、前記半導体基板を前記チャンバ内に導入する前に、前記アルコールを用いて前記半導体基板をリンスすることを特徴とする請求項1に記載の半導体基板の超臨界乾燥方法。 - 前記金属膜は、タングステン、チタン、又は窒化チタンを含むことを特徴とする請求項1又は2に記載の半導体基板の超臨界乾燥方法。
- 前記アルコールはイソプロピルアルコールであり、前記臨界温度は235.6℃であることを特徴とする請求項1乃至3のいずれかに記載の半導体基板の超臨界乾燥方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011068537A JP5450494B2 (ja) | 2011-03-25 | 2011-03-25 | 半導体基板の超臨界乾燥方法 |
US13/231,956 US9437416B2 (en) | 2011-03-25 | 2011-09-13 | Supercritical drying method for semiconductor substrate |
TW100133291A TWI471920B (zh) | 2011-03-25 | 2011-09-15 | 半導體基板用超臨界乾燥方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011068537A JP5450494B2 (ja) | 2011-03-25 | 2011-03-25 | 半導体基板の超臨界乾燥方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012204656A JP2012204656A (ja) | 2012-10-22 |
JP5450494B2 true JP5450494B2 (ja) | 2014-03-26 |
Family
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Family Applications (1)
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JP2011068537A Active JP5450494B2 (ja) | 2011-03-25 | 2011-03-25 | 半導体基板の超臨界乾燥方法 |
Country Status (3)
Country | Link |
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US (1) | US9437416B2 (ja) |
JP (1) | JP5450494B2 (ja) |
TW (1) | TWI471920B (ja) |
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KR102037844B1 (ko) * | 2013-03-12 | 2019-11-27 | 삼성전자주식회사 | 초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법 |
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KR102055712B1 (ko) | 2015-10-04 | 2019-12-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 감소된 용적의 처리 챔버 |
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CN110998801B (zh) * | 2017-08-10 | 2023-10-31 | 株式会社富士金 | 流体供给装置和流体供给方法 |
KR102405723B1 (ko) | 2017-08-18 | 2022-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 및 고온 어닐링 챔버 |
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2011
- 2011-03-25 JP JP2011068537A patent/JP5450494B2/ja active Active
- 2011-09-13 US US13/231,956 patent/US9437416B2/en active Active
- 2011-09-15 TW TW100133291A patent/TWI471920B/zh active
Also Published As
Publication number | Publication date |
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US9437416B2 (en) | 2016-09-06 |
TWI471920B (zh) | 2015-02-01 |
JP2012204656A (ja) | 2012-10-22 |
US20120240426A1 (en) | 2012-09-27 |
TW201239967A (en) | 2012-10-01 |
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