JP7092121B2 - ポジ型感光性樹脂組成物、ポジ型感光性樹脂用熱架橋剤、パターン硬化膜及びその製造方法、半導体素子、並びに電子デバイス - Google Patents
ポジ型感光性樹脂組成物、ポジ型感光性樹脂用熱架橋剤、パターン硬化膜及びその製造方法、半導体素子、並びに電子デバイス Download PDFInfo
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- JP7092121B2 JP7092121B2 JP2019516802A JP2019516802A JP7092121B2 JP 7092121 B2 JP7092121 B2 JP 7092121B2 JP 2019516802 A JP2019516802 A JP 2019516802A JP 2019516802 A JP2019516802 A JP 2019516802A JP 7092121 B2 JP7092121 B2 JP 7092121B2
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- 238000010438 heat treatment Methods 0.000 claims description 32
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- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 4
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- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
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- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
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- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
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- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
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- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 2
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- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000001302 tertiary amino group Chemical group 0.000 description 2
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- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- SPEUIVXLLWOEMJ-UHFFFAOYSA-N 1,1-dimethoxyethane Chemical group COC(C)OC SPEUIVXLLWOEMJ-UHFFFAOYSA-N 0.000 description 1
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- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
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- HSVFKFNNMLUVEY-UHFFFAOYSA-N sulfuryl diazide Chemical group [N-]=[N+]=NS(=O)(=O)N=[N+]=[N-] HSVFKFNNMLUVEY-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
Landscapes
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- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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| PCT/JP2017/017754 WO2018207294A1 (ja) | 2017-05-10 | 2017-05-10 | ポジ型感光性樹脂組成物、ポジ型感光性樹脂用熱架橋剤、パターン硬化膜及びその製造方法、半導体素子、並びに電子デバイス |
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| JPWO2018207294A1 JPWO2018207294A1 (ja) | 2020-03-12 |
| JP7092121B2 true JP7092121B2 (ja) | 2022-06-28 |
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| JP2019516802A Active JP7092121B2 (ja) | 2017-05-10 | 2017-05-10 | ポジ型感光性樹脂組成物、ポジ型感光性樹脂用熱架橋剤、パターン硬化膜及びその製造方法、半導体素子、並びに電子デバイス |
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| JP (1) | JP7092121B2 (zh) |
| KR (1) | KR102425708B1 (zh) |
| CN (1) | CN110582726B (zh) |
| SG (1) | SG11201909393SA (zh) |
| TW (1) | TWI781171B (zh) |
| WO (1) | WO2018207294A1 (zh) |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013015856A (ja) | 2008-12-26 | 2013-01-24 | Hitachi Chem Co Ltd | ポジ型感光性樹脂組成物、レジストパターンの製造方法、半導体装置及び電子デバイス |
| JP2013140338A (ja) | 2011-12-09 | 2013-07-18 | Shin Etsu Chem Co Ltd | 化学増幅ネガ型レジスト組成物、光硬化性ドライフィルム、その製造方法、パターン形成方法、及び電気・電子部品保護用皮膜 |
| JP2015132676A (ja) | 2014-01-10 | 2015-07-23 | 信越化学工業株式会社 | ネガ型レジスト材料及びこれを用いたパターン形成方法 |
| JP2015188011A (ja) | 2014-03-26 | 2015-10-29 | 富士フイルム株式会社 | 半導体素子及び絶縁層形成用組成物 |
| JP2015206013A (ja) | 2014-04-23 | 2015-11-19 | 日立化成株式会社 | 感光性接着剤組成物、それを用いた半導体装置の製造方法、及び半導体装置 |
| JP2016004209A (ja) | 2014-06-18 | 2016-01-12 | 信越化学工業株式会社 | ポジ型感光性樹脂組成物、光硬化性ドライフィルム並びにその製造方法、積層体、パターン形成方法、及び基板 |
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|---|---|---|---|---|
| JP2006243563A (ja) * | 2005-03-04 | 2006-09-14 | Fuji Photo Film Co Ltd | 感光性ソルダーレジスト組成物及び感光性ソルダーレジストフィルム、並びに、永久パターン及びその形成方法 |
| JP4640037B2 (ja) | 2005-08-22 | 2011-03-02 | Ｊｓｒ株式会社 | ポジ型感光性絶縁樹脂組成物およびその硬化物 |
| JP5067028B2 (ja) | 2007-06-12 | 2012-11-07 | 日立化成工業株式会社 | ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子デバイス |
| EP2221666B1 (en) * | 2007-11-12 | 2013-09-18 | Hitachi Chemical Company, Ltd. | Positive-type photosensitive resin composition, method for production of resist pattern, and semiconductor device |
| JP2010073948A (ja) | 2008-09-19 | 2010-04-02 | Gigaphoton Inc | パルスレーザ用電源装置 |
| JP5915532B2 (ja) * | 2010-09-16 | 2016-05-11 | 日立化成株式会社 | ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子部品 |
| JP2014202849A (ja) * | 2013-04-03 | 2014-10-27 | 日立化成株式会社 | 感光性接着剤組成物、それを用いたパターン硬化膜の製造方法及び電子部品 |
| JP2015200819A (ja) * | 2014-04-09 | 2015-11-12 | 日立化成デュポンマイクロシステムズ株式会社 | ポジ型感光性樹脂組成物及びそれを用いたパターン硬化膜とその製造方法 |
| JP2016177027A (ja) * | 2015-03-19 | 2016-10-06 | 日立化成株式会社 | 感光性樹脂組成物、該感光性樹脂組成物を用いた形成したパターン硬化膜、及び該パターン硬化膜を撥インク性バンク膜として備える有機ｅｌ用表示装置 |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013015856A (ja) | 2008-12-26 | 2013-01-24 | Hitachi Chem Co Ltd | ポジ型感光性樹脂組成物、レジストパターンの製造方法、半導体装置及び電子デバイス |
| JP2013140338A (ja) | 2011-12-09 | 2013-07-18 | Shin Etsu Chem Co Ltd | 化学増幅ネガ型レジスト組成物、光硬化性ドライフィルム、その製造方法、パターン形成方法、及び電気・電子部品保護用皮膜 |
| JP2015132676A (ja) | 2014-01-10 | 2015-07-23 | 信越化学工業株式会社 | ネガ型レジスト材料及びこれを用いたパターン形成方法 |
| JP2015188011A (ja) | 2014-03-26 | 2015-10-29 | 富士フイルム株式会社 | 半導体素子及び絶縁層形成用組成物 |
| JP2015206013A (ja) | 2014-04-23 | 2015-11-19 | 日立化成株式会社 | 感光性接着剤組成物、それを用いた半導体装置の製造方法、及び半導体装置 |
| JP2016004209A (ja) | 2014-06-18 | 2016-01-12 | 信越化学工業株式会社 | ポジ型感光性樹脂組成物、光硬化性ドライフィルム並びにその製造方法、積層体、パターン形成方法、及び基板 |
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| KR20200006522A (ko) | 2020-01-20 |
| JPWO2018207294A1 (ja) | 2020-03-12 |
| KR102425708B1 (ko) | 2022-07-28 |
| TWI781171B (zh) | 2022-10-21 |
| CN110582726A (zh) | 2019-12-17 |
| TW201901301A (zh) | 2019-01-01 |
| SG11201909393SA (en) | 2019-11-28 |
| CN110582726B (zh) | 2023-08-04 |
| WO2018207294A1 (ja) | 2018-11-15 |
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