SG11201909393SA - Positive-type photosensitive resin composition, thermal crosslinking agent for positive-type photosensitive resins, patterned cured film and method for producing same, semiconductor element, and electronic device - Google Patents
Positive-type photosensitive resin composition, thermal crosslinking agent for positive-type photosensitive resins, patterned cured film and method for producing same, semiconductor element, and electronic deviceInfo
- Publication number
- SG11201909393SA SG11201909393SA SG11201909393SA SG11201909393SA SG 11201909393S A SG11201909393S A SG 11201909393SA SG 11201909393S A SG11201909393S A SG 11201909393SA SG 11201909393S A SG11201909393S A SG 11201909393SA
- Authority
- SG
- Singapore
- Prior art keywords
- positive
- type photosensitive
- resin composition
- electronic device
- semiconductor element
- Prior art date
Links
- 239000011347 resin Substances 0.000 title abstract 2
- 229920005989 resin Polymers 0.000 title abstract 2
- 239000011342 resin composition Substances 0.000 title abstract 2
- 239000003431 cross linking reagent Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 150000001875 compounds Chemical class 0.000 abstract 3
- 125000000217 alkyl group Chemical group 0.000 abstract 2
- 125000004432 carbon atom Chemical group C* 0.000 abstract 2
- 125000003700 epoxy group Chemical group 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2017/017754 WO2018207294A1 (ja) | 2017-05-10 | 2017-05-10 | ポジ型感光性樹脂組成物、ポジ型感光性樹脂用熱架橋剤、パターン硬化膜及びその製造方法、半導体素子、並びに電子デバイス |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201909393SA true SG11201909393SA (en) | 2019-11-28 |
Family
ID=64104604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201909393S SG11201909393SA (en) | 2017-05-10 | 2017-05-10 | Positive-type photosensitive resin composition, thermal crosslinking agent for positive-type photosensitive resins, patterned cured film and method for producing same, semiconductor element, and electronic device |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP7092121B2 (zh) |
KR (1) | KR102425708B1 (zh) |
CN (1) | CN110582726B (zh) |
SG (1) | SG11201909393SA (zh) |
TW (1) | TWI781171B (zh) |
WO (1) | WO2018207294A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020194612A1 (ja) * | 2019-03-27 | 2020-10-01 | 日立化成株式会社 | 樹脂組成物、硬化物、半導体素子及び電子デバイス |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006243563A (ja) * | 2005-03-04 | 2006-09-14 | Fuji Photo Film Co Ltd | 感光性ソルダーレジスト組成物及び感光性ソルダーレジストフィルム、並びに、永久パターン及びその形成方法 |
JP4640037B2 (ja) | 2005-08-22 | 2011-03-02 | Jsr株式会社 | ポジ型感光性絶縁樹脂組成物およびその硬化物 |
JP5067028B2 (ja) | 2007-06-12 | 2012-11-07 | 日立化成工業株式会社 | ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子デバイス |
EP2221666B1 (en) * | 2007-11-12 | 2013-09-18 | Hitachi Chemical Company, Ltd. | Positive-type photosensitive resin composition, method for production of resist pattern, and semiconductor device |
JP2010073948A (ja) | 2008-09-19 | 2010-04-02 | Gigaphoton Inc | パルスレーザ用電源装置 |
CN103091987B (zh) | 2008-12-26 | 2016-11-23 | 日立化成株式会社 | 正型感光性树脂组合物、抗蚀图形的制造方法、半导体装置以及电子器件 |
JP5915532B2 (ja) * | 2010-09-16 | 2016-05-11 | 日立化成株式会社 | ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子部品 |
JP5846110B2 (ja) | 2011-12-09 | 2016-01-20 | 信越化学工業株式会社 | 化学増幅ネガ型レジスト組成物、光硬化性ドライフィルム、その製造方法、パターン形成方法、及び電気・電子部品保護用皮膜 |
JP2014202849A (ja) * | 2013-04-03 | 2014-10-27 | 日立化成株式会社 | 感光性接着剤組成物、それを用いたパターン硬化膜の製造方法及び電子部品 |
JP5981465B2 (ja) * | 2014-01-10 | 2016-08-31 | 信越化学工業株式会社 | ネガ型レジスト材料及びこれを用いたパターン形成方法 |
JP6034326B2 (ja) | 2014-03-26 | 2016-11-30 | 富士フイルム株式会社 | 半導体素子及び絶縁層形成用組成物 |
JP2015200819A (ja) * | 2014-04-09 | 2015-11-12 | 日立化成デュポンマイクロシステムズ株式会社 | ポジ型感光性樹脂組成物及びそれを用いたパターン硬化膜とその製造方法 |
JP2015206013A (ja) | 2014-04-23 | 2015-11-19 | 日立化成株式会社 | 感光性接着剤組成物、それを用いた半導体装置の製造方法、及び半導体装置 |
JP6199811B2 (ja) * | 2014-06-18 | 2017-09-20 | 信越化学工業株式会社 | ポジ型感光性樹脂組成物、光硬化性ドライフィルム並びにその製造方法、積層体、及びパターン形成方法 |
JP2016177027A (ja) * | 2015-03-19 | 2016-10-06 | 日立化成株式会社 | 感光性樹脂組成物、該感光性樹脂組成物を用いた形成したパターン硬化膜、及び該パターン硬化膜を撥インク性バンク膜として備える有機el用表示装置 |
-
2017
- 2017-05-10 SG SG11201909393S patent/SG11201909393SA/en unknown
- 2017-05-10 CN CN201780090330.6A patent/CN110582726B/zh active Active
- 2017-05-10 KR KR1020197029304A patent/KR102425708B1/ko active IP Right Grant
- 2017-05-10 JP JP2019516802A patent/JP7092121B2/ja active Active
- 2017-05-10 WO PCT/JP2017/017754 patent/WO2018207294A1/ja active Application Filing
-
2018
- 2018-05-09 TW TW107115716A patent/TWI781171B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR20200006522A (ko) | 2020-01-20 |
JPWO2018207294A1 (ja) | 2020-03-12 |
JP7092121B2 (ja) | 2022-06-28 |
KR102425708B1 (ko) | 2022-07-28 |
TWI781171B (zh) | 2022-10-21 |
CN110582726A (zh) | 2019-12-17 |
TW201901301A (zh) | 2019-01-01 |
CN110582726B (zh) | 2023-08-04 |
WO2018207294A1 (ja) | 2018-11-15 |
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