SG11201909393SA - Positive-type photosensitive resin composition, thermal crosslinking agent for positive-type photosensitive resins, patterned cured film and method for producing same, semiconductor element, and electronic device - Google Patents

Positive-type photosensitive resin composition, thermal crosslinking agent for positive-type photosensitive resins, patterned cured film and method for producing same, semiconductor element, and electronic device

Info

Publication number
SG11201909393SA
SG11201909393SA SG11201909393SA SG11201909393SA SG 11201909393S A SG11201909393S A SG 11201909393SA SG 11201909393S A SG11201909393S A SG 11201909393SA SG 11201909393S A SG11201909393S A SG 11201909393SA
Authority
SG
Singapore
Prior art keywords
positive
type photosensitive
resin composition
electronic device
semiconductor element
Prior art date
Application number
Other languages
English (en)
Inventor
Yu Aoki
Masahiro Hashimoto
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG11201909393SA publication Critical patent/SG11201909393SA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31058After-treatment of organic layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11201909393S 2017-05-10 2017-05-10 Positive-type photosensitive resin composition, thermal crosslinking agent for positive-type photosensitive resins, patterned cured film and method for producing same, semiconductor element, and electronic device SG11201909393SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2017/017754 WO2018207294A1 (ja) 2017-05-10 2017-05-10 ポジ型感光性樹脂組成物、ポジ型感光性樹脂用熱架橋剤、パターン硬化膜及びその製造方法、半導体素子、並びに電子デバイス

Publications (1)

Publication Number Publication Date
SG11201909393SA true SG11201909393SA (en) 2019-11-28

Family

ID=64104604

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201909393S SG11201909393SA (en) 2017-05-10 2017-05-10 Positive-type photosensitive resin composition, thermal crosslinking agent for positive-type photosensitive resins, patterned cured film and method for producing same, semiconductor element, and electronic device

Country Status (6)

Country Link
JP (1) JP7092121B2 (zh)
KR (1) KR102425708B1 (zh)
CN (1) CN110582726B (zh)
SG (1) SG11201909393SA (zh)
TW (1) TWI781171B (zh)
WO (1) WO2018207294A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020194612A1 (ja) * 2019-03-27 2020-10-01 日立化成株式会社 樹脂組成物、硬化物、半導体素子及び電子デバイス

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006243563A (ja) * 2005-03-04 2006-09-14 Fuji Photo Film Co Ltd 感光性ソルダーレジスト組成物及び感光性ソルダーレジストフィルム、並びに、永久パターン及びその形成方法
JP4640037B2 (ja) 2005-08-22 2011-03-02 Jsr株式会社 ポジ型感光性絶縁樹脂組成物およびその硬化物
JP5067028B2 (ja) 2007-06-12 2012-11-07 日立化成工業株式会社 ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子デバイス
EP2221666B1 (en) * 2007-11-12 2013-09-18 Hitachi Chemical Company, Ltd. Positive-type photosensitive resin composition, method for production of resist pattern, and semiconductor device
JP2010073948A (ja) 2008-09-19 2010-04-02 Gigaphoton Inc パルスレーザ用電源装置
CN103091987B (zh) 2008-12-26 2016-11-23 日立化成株式会社 正型感光性树脂组合物、抗蚀图形的制造方法、半导体装置以及电子器件
JP5915532B2 (ja) * 2010-09-16 2016-05-11 日立化成株式会社 ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子部品
JP5846110B2 (ja) 2011-12-09 2016-01-20 信越化学工業株式会社 化学増幅ネガ型レジスト組成物、光硬化性ドライフィルム、その製造方法、パターン形成方法、及び電気・電子部品保護用皮膜
JP2014202849A (ja) * 2013-04-03 2014-10-27 日立化成株式会社 感光性接着剤組成物、それを用いたパターン硬化膜の製造方法及び電子部品
JP5981465B2 (ja) * 2014-01-10 2016-08-31 信越化学工業株式会社 ネガ型レジスト材料及びこれを用いたパターン形成方法
JP6034326B2 (ja) 2014-03-26 2016-11-30 富士フイルム株式会社 半導体素子及び絶縁層形成用組成物
JP2015200819A (ja) * 2014-04-09 2015-11-12 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物及びそれを用いたパターン硬化膜とその製造方法
JP2015206013A (ja) 2014-04-23 2015-11-19 日立化成株式会社 感光性接着剤組成物、それを用いた半導体装置の製造方法、及び半導体装置
JP6199811B2 (ja) * 2014-06-18 2017-09-20 信越化学工業株式会社 ポジ型感光性樹脂組成物、光硬化性ドライフィルム並びにその製造方法、積層体、及びパターン形成方法
JP2016177027A (ja) * 2015-03-19 2016-10-06 日立化成株式会社 感光性樹脂組成物、該感光性樹脂組成物を用いた形成したパターン硬化膜、及び該パターン硬化膜を撥インク性バンク膜として備える有機el用表示装置

Also Published As

Publication number Publication date
KR20200006522A (ko) 2020-01-20
JPWO2018207294A1 (ja) 2020-03-12
JP7092121B2 (ja) 2022-06-28
KR102425708B1 (ko) 2022-07-28
TWI781171B (zh) 2022-10-21
CN110582726A (zh) 2019-12-17
TW201901301A (zh) 2019-01-01
CN110582726B (zh) 2023-08-04
WO2018207294A1 (ja) 2018-11-15

Similar Documents

Publication Publication Date Title
RU2015119967A (ru) Отверждающий агент эпоксидной смолы
RU2017103513A (ru) Амин для низкоэмиссионных композиций эпоксидных смол
RU2018101970A (ru) Композиция эпоксидной смолы с низким уровнем выбросов
EP2444431A4 (en) NOVOLAQUE OF CARBAZOLE
HK1151810A1 (en) Dimethylformamide-free formulations using dicyanadiamide as curing agent for thermosetting epoxy resins
TW200942580A (en) Radiation-sensitive resin composition, cured product thereof, and interlayer insulation film and optical device using the composition
SG11201807157QA (en) Anticorrosion coating composition, anticorrosion coating film, substrate with anticorrosion coating film, and method of manufacturing same
TW200734375A (en) Organosilane polymers, hardmask compositions including the same and methods of producing semiconductor devices using organosilane hardmask compositions
TW201129614A (en) Epoxy-containing polymer compound, photocurable resin composition comprising the same, method for forming pattern, and film for protecting electric/electronic part
DE602006002808D1 (de) Härtbare silikonzusammensetzung und daraus hergestellte elektronische vorrichtung
DE602007006345D1 (de) Härtbare silikonzusammensetzung und elektronikbauteil
MY187481A (en) Photosensitive resin composition
TW200736852A (en) Resist composition, method for forming resist pattern, and semiconductor device and method for manufacturing the same
DE60306554D1 (de) Flammhemmende formbare zusammensetzungen
MY185987A (en) Curable composition, method for producing curable composition, cured product, use of curable composition, and optical device
MY155689A (en) Resin composition for encapsulating semiconductor and semiconductor device
MY186932A (en) Photosensitive resin composition
MY174577A (en) Photosensitive resin composition and photosensitive resin laminate
TW200708889A (en) Photosensitive dry film for producing three-dimensional micromolded product and photosensitive resin composition
DE50106154D1 (de) Latente Kombinationsverbindungen und latente Ammoniumsalze aus Epoxidharzhärter und Flammschutzmittel sowie daraus hergestellte Epoxidharz-Systeme und -Produkte
SG11201909393SA (en) Positive-type photosensitive resin composition, thermal crosslinking agent for positive-type photosensitive resins, patterned cured film and method for producing same, semiconductor element, and electronic device
TW200801062A (en) Epoxy resin molding material for sealing and device of electronic part
TW200740870A (en) Epoxy resin composition for encapsulating semiconductor and semiconductor device
EP3885378A4 (en) ACTINIC RAY OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD AND PRODUCTION METHOD FOR ELECTRONIC DEVICE
EP4166537A4 (en) RESIN COMPOSITION SENSITIVE TO ACTIVE RAY OR RADIATION, RESIST FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE AND COMPOUND