JP6865561B2 - 非確率論抵抗性スイッチングメモリデバイス及び製造方法 - Google Patents
非確率論抵抗性スイッチングメモリデバイス及び製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000000463 material Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 48
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 150000004767 nitrides Chemical class 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 6
- 239000007789 gas Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 230000015654 memory Effects 0.000 description 118
- 239000010410 layer Substances 0.000 description 86
- 238000003860 storage Methods 0.000 description 21
- 238000005516 engineering process Methods 0.000 description 16
- 238000012545 processing Methods 0.000 description 16
- 230000004044 response Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 238000003491 array Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000004891 communication Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000002609 medium Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 239000002923 metal particle Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000006163 transport media Substances 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010416 ion conductor Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008672 reprogramming Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
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Description
Claims (11)
- 抵抗性スイッチングデバイスであって、
半導体基板上に配置された下部電極と、
前記下部電極上に配置され、アルミニウム及び窒素材料:AlNyを含む抵抗性スイッチング材料と、
前記抵抗性スイッチング材料上に配置され、非化学量論比のアルミニウム及び窒素材料:xが0.60〜0.80の範囲にあるAlNx(y>x)を含む導体材料と、
前記導体材料上に配置された上部電極とを備える抵抗性スイッチングデバイス。 - 前記下部電極は、金属窒化物を含む、請求項1に記載の抵抗性スイッチングデバイス。
- AlNyは、化学量論比又は非化学量論比のアルミニウム窒化物であり、yは、1.00〜1.50の範囲である、請求項1に記載の抵抗性スイッチングデバイス。
- yは、1.00〜1.50の範囲である、請求項1に記載の抵抗性スイッチングデバイス。
- 前記抵抗性スイッチング材料は、2nm〜20nmの厚みを備える、請求項1に記載の抵抗性スイッチングデバイス。
- 前記導体材料は、4nm〜100nmの厚みを備える、請求項1に記載の抵抗性スイッチングデバイス。
- 前記抵抗性スイッチング材料は、1メガオーム(MOhms)〜100メガオーム(MOhms)の範囲内で初期抵抗と関連する、請求項1に記載の抵抗性スイッチングデバイス。
- 前記導体材料は、1キロオーム(KOhms)〜100キロオーム(KOhms)の範囲内で初期抵抗と関連する、請求項1に記載の抵抗性スイッチングデバイス。
- 前記下部電極は、銅、窒化チタン、窒化タンタルからなる群から選択された材料を含む、請求項1に記載の抵抗性スイッチングデバイス。
- 半導体デバイスの形成方法であって、
半導体基板上に下部電極を形成する工程と、
前記下部電極上に、アルミニウム及び窒素材料:AlNyを含む抵抗性スイッチング材料層を形成する工程と、
前記抵抗性スイッチング材料層上に、非化学量論比のアルミニウム及び窒素材料:xが0.60〜0.80の範囲にあるAlNx(y>x)を含む導体材料を形成する工程と、
前記導体材料上に上部電極を形成する工程を備える半導体デバイスの形成方法。 - 前記抵抗性スイッチング材料層を形成する工程は、窒素ガスの第一濃度に関連するアルゴンガス及び窒素ガス環境中に前記アルミニウム材料を配置する工程を備え、
前記導体材料を形成する工程は、窒素ガスの第二濃度に関連する第二アルゴンガス及び窒素ガス環境中に前記アルミニウム材料を配置する工程を備え、
窒素ガスの前記第一濃度は、窒素ガスの前記第二濃度を超えてなる、請求項10に記載の半導体デバイスの形成方法。
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KR (1) | KR20170131189A (ja) |
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RU2749028C9 (ru) * | 2020-07-29 | 2021-09-07 | Федеральное государственное бюджетное учреждение Институт физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук (ИФП СО РАН) | Способ получения активной структуры элемента энергонезависимой резистивной памяти |
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US8853099B2 (en) * | 2011-12-16 | 2014-10-07 | Intermolecular, Inc. | Nonvolatile resistive memory element with a metal nitride containing switching layer |
JP6050015B2 (ja) * | 2012-03-30 | 2016-12-21 | ソニーセミコンダクタソリューションズ株式会社 | 記憶素子および記憶装置 |
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CN107403866B (zh) | 2020-02-21 |
TWI731903B (zh) | 2021-07-01 |
TW201742282A (zh) | 2017-12-01 |
JP2017208523A (ja) | 2017-11-24 |
CN107403866A (zh) | 2017-11-28 |
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