TWI731903B - 非化學計量電阻式切換記憶體裝置和製造方法 - Google Patents

非化學計量電阻式切換記憶體裝置和製造方法 Download PDF

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Publication number
TWI731903B
TWI731903B TW105138758A TW105138758A TWI731903B TW I731903 B TWI731903 B TW I731903B TW 105138758 A TW105138758 A TW 105138758A TW 105138758 A TW105138758 A TW 105138758A TW I731903 B TWI731903 B TW I731903B
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TW
Taiwan
Prior art keywords
resistive switching
memory
forming
item
patent application
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TW105138758A
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English (en)
Chinese (zh)
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TW201742282A (zh
Inventor
周承賢
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美商橫杆股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
TW105138758A 2016-05-20 2016-11-23 非化學計量電阻式切換記憶體裝置和製造方法 TWI731903B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662339536P 2016-05-20 2016-05-20
US62/339,536 2016-05-20

Publications (2)

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TW201742282A TW201742282A (zh) 2017-12-01
TWI731903B true TWI731903B (zh) 2021-07-01

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TW105138758A TWI731903B (zh) 2016-05-20 2016-11-23 非化學計量電阻式切換記憶體裝置和製造方法

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Country Link
JP (1) JP6865561B2 (ja)
KR (1) KR20170131189A (ja)
CN (1) CN107403866B (ja)
TW (1) TWI731903B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2749028C9 (ru) * 2020-07-29 2021-09-07 Федеральное государственное бюджетное учреждение Институт физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук (ИФП СО РАН) Способ получения активной структуры элемента энергонезависимой резистивной памяти

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201347253A (zh) * 2012-03-30 2013-11-16 Sony Corp 儲存裝置及儲存單元

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2468471C1 (ru) * 2011-04-07 2012-11-27 Государственное образовательное учреждение высшего профессионального образования "Петрозаводский государственный университет" Способ получения энергонезависимого элемента памяти
US8853099B2 (en) * 2011-12-16 2014-10-07 Intermolecular, Inc. Nonvolatile resistive memory element with a metal nitride containing switching layer
TWI489461B (zh) * 2012-09-04 2015-06-21 Ind Tech Res Inst 電阻式記憶體結構、其操作方法及製作方法
CN103280526B (zh) * 2013-05-29 2015-03-11 北京大学 一种忆阻层及忆阻器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201347253A (zh) * 2012-03-30 2013-11-16 Sony Corp 儲存裝置及儲存單元

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Publication number Publication date
KR20170131189A (ko) 2017-11-29
CN107403866B (zh) 2020-02-21
TW201742282A (zh) 2017-12-01
JP2017208523A (ja) 2017-11-24
CN107403866A (zh) 2017-11-28
JP6865561B2 (ja) 2021-04-28

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