TWI731903B - 非化學計量電阻式切換記憶體裝置和製造方法 - Google Patents
非化學計量電阻式切換記憶體裝置和製造方法 Download PDFInfo
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- TWI731903B TWI731903B TW105138758A TW105138758A TWI731903B TW I731903 B TWI731903 B TW I731903B TW 105138758 A TW105138758 A TW 105138758A TW 105138758 A TW105138758 A TW 105138758A TW I731903 B TWI731903 B TW I731903B
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- Prior art keywords
- resistive switching
- memory
- forming
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- 238000004519 manufacturing process Methods 0.000 title description 7
- 239000000463 material Substances 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 150000004767 nitrides Chemical class 0.000 claims abstract description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- 239000004020 conductor Substances 0.000 claims description 20
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662339536P | 2016-05-20 | 2016-05-20 | |
US62/339,536 | 2016-05-20 |
Publications (2)
Publication Number | Publication Date |
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TW201742282A TW201742282A (zh) | 2017-12-01 |
TWI731903B true TWI731903B (zh) | 2021-07-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW105138758A TWI731903B (zh) | 2016-05-20 | 2016-11-23 | 非化學計量電阻式切換記憶體裝置和製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6865561B2 (ja) |
KR (1) | KR20170131189A (ja) |
CN (1) | CN107403866B (ja) |
TW (1) | TWI731903B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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RU2749028C9 (ru) * | 2020-07-29 | 2021-09-07 | Федеральное государственное бюджетное учреждение Институт физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук (ИФП СО РАН) | Способ получения активной структуры элемента энергонезависимой резистивной памяти |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201347253A (zh) * | 2012-03-30 | 2013-11-16 | Sony Corp | 儲存裝置及儲存單元 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2468471C1 (ru) * | 2011-04-07 | 2012-11-27 | Государственное образовательное учреждение высшего профессионального образования "Петрозаводский государственный университет" | Способ получения энергонезависимого элемента памяти |
US8853099B2 (en) * | 2011-12-16 | 2014-10-07 | Intermolecular, Inc. | Nonvolatile resistive memory element with a metal nitride containing switching layer |
TWI489461B (zh) * | 2012-09-04 | 2015-06-21 | Ind Tech Res Inst | 電阻式記憶體結構、其操作方法及製作方法 |
CN103280526B (zh) * | 2013-05-29 | 2015-03-11 | 北京大学 | 一种忆阻层及忆阻器 |
-
2016
- 2016-11-22 KR KR1020160155762A patent/KR20170131189A/ko not_active Application Discontinuation
- 2016-11-22 JP JP2016226818A patent/JP6865561B2/ja active Active
- 2016-11-23 CN CN201611042583.XA patent/CN107403866B/zh active Active
- 2016-11-23 TW TW105138758A patent/TWI731903B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201347253A (zh) * | 2012-03-30 | 2013-11-16 | Sony Corp | 儲存裝置及儲存單元 |
Also Published As
Publication number | Publication date |
---|---|
KR20170131189A (ko) | 2017-11-29 |
CN107403866B (zh) | 2020-02-21 |
TW201742282A (zh) | 2017-12-01 |
JP2017208523A (ja) | 2017-11-24 |
CN107403866A (zh) | 2017-11-28 |
JP6865561B2 (ja) | 2021-04-28 |
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