JP6819943B2 - 気密パッケージの製造方法及び気密パッケージ - Google Patents
気密パッケージの製造方法及び気密パッケージ Download PDFInfo
- Publication number
- JP6819943B2 JP6819943B2 JP2018522372A JP2018522372A JP6819943B2 JP 6819943 B2 JP6819943 B2 JP 6819943B2 JP 2018522372 A JP2018522372 A JP 2018522372A JP 2018522372 A JP2018522372 A JP 2018522372A JP 6819943 B2 JP6819943 B2 JP 6819943B2
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- JP
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- material layer
- sealing material
- ceramic substrate
- airtight package
- glass lid
- Prior art date
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- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
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- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
- 229910000500 β-quartz Inorganic materials 0.000 description 1
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Classifications
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- C03C3/14—Silica-free oxide glass compositions containing boron
-
- H—ELECTRICITY
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/59—Aspects relating to the structure of the interlayer
- C04B2237/592—Aspects relating to the structure of the interlayer whereby the interlayer is not continuous, e.g. not the whole surface of the smallest substrate is covered by the interlayer
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/62—Forming laminates or joined articles comprising holes, channels or other types of openings
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Structural Engineering (AREA)
- Glass Compositions (AREA)
Description
10 窒化アルミニウム基体
11 ガラス蓋
12 基部
13 枠部
14 内部素子
15 枠部の頂部
16 封着材料層
17 レーザー照射装置
L レーザー光
Claims (14)
- セラミック基体を用意する工程と、
ガラス蓋を用意する工程と、
ガラス蓋上に、照射すべきレーザー光の波長における厚み方向の全光線透過率が10%以上、且つ80%以下になり、且つ実質的にレーザー吸収材を含んでいない封着材料層を形成する工程と、
封着材料層を介して、ガラス蓋とセラミック基体とを積層配置する工程と、
ガラス蓋側から封着材料層に向けてレーザー光を照射し、封着材料層を軟化変形させることにより、セラミック基体とガラス蓋とを気密一体化して、気密パッケージを得る工程と、を備えることを特徴とする気密パッケージの製造方法。 - セラミック基体を用意する工程と、
ガラス蓋を用意する工程と、
ガラス蓋上に、波長808nmにおける厚み方向の全光線透過率が10%以上、且つ80%以下になり、且つ実質的にレーザー吸収材を含んでいない封着材料層を形成する工程と、
封着材料層を介して、ガラス蓋とセラミック基体とを積層配置する工程と、
ガラス蓋側から封着材料層に向けてレーザー光を照射し、封着材料層を軟化変形させることにより、セラミック基体とガラス蓋とを気密一体化して、気密パッケージを得る工程と、を備えることを特徴とする気密パッケージの製造方法。 - 平均厚みが8.0μm未満になるように、封着材料層を形成することを特徴とする請求項1又は2に記載の気密パッケージの製造方法。
- 少なくともビスマス系ガラス粉末と耐火性フィラー粉末を含む複合粉末を焼成して、ガラス蓋上に封着材料層を形成することを特徴とする請求項1〜3の何れかに記載の気密パッケージの製造方法。
- 基部と基部上に設けられた枠部とを有するセラミック基体を用いることを特徴とする請求項1〜4の何れかに記載の気密パッケージの製造方法。
- セラミック基体が、照射すべきレーザー光を吸収する性質を有することを特徴とする請求項1〜5の何れかに記載の気密パッケージの製造方法。
- 黒色顔料が分散されたセラミック基体を用意する工程と、
ガラス蓋を用意する工程と、
ガラス蓋上に、照射すべきレーザー光の波長における厚み方向の全光線透過率が10%以上、且つ80%以下になり、且つ実質的にレーザー吸収材を含んでいない封着材料層を形成する工程と、
封着材料層を介して、ガラス蓋とセラミック基体とを積層配置する工程と、
ガラス蓋側から封着材料層に向けてレーザー光を照射し、封着材料層を軟化変形させると共に、セラミック基体を加熱することにより、セラミック基体とガラス蓋とを気密一体化して、気密パッケージを得る工程と、を備えることを特徴とする気密パッケージの製造方法。 - 実質的にレーザー吸収材を含んでいない封着材料層を介して、セラミック基体とガラス蓋とが気密一体化された気密パッケージにおいて、
波長808nmにおける封着材料層の厚み方向の全光線透過率が10%以上、且つ80%以下であることを特徴とする気密パッケージ。 - 封着材料層の平均厚みが8.0μm未満であることを特徴とする請求項8に記載の気密パッケージ。
- 封着材料層が、少なくともビスマス系ガラス粉末と耐火性フィラー粉末を含む複合粉末の焼結体であることを特徴とする請求項8又は9に記載の気密パッケージ。
- セラミック基体が、基部と基部上に設けられた枠部とを有することを特徴とする請求項8〜10の何れかに記載の気密パッケージ。
- セラミック基体の熱伝導率が1W/(m・K)以上であることを特徴とする請求項8〜11の何れかに記載の気密パッケージ。
- セラミック基体がガラスセラミック、窒化アルミニウム、アルミナの何れか、或いはこれらの複合材料であることを特徴とする請求項8〜12の何れかに記載の気密パッケージ。
- 紫外LED素子、センサー素子、圧電振動素子、樹脂中に量子ドットを分散させた波長変換素子の何れかが収容されていることを特徴とする請求項8〜13の何れかに記載の気密パッケージ。
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PCT/JP2017/016975 WO2017212828A1 (ja) | 2016-06-10 | 2017-04-28 | 気密パッケージの製造方法及び気密パッケージ |
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JP (1) | JP6819943B2 (ja) |
KR (1) | KR102361856B1 (ja) |
CN (1) | CN109075128B (ja) |
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CN110249421B (zh) * | 2017-02-07 | 2023-10-24 | 日本电气硝子株式会社 | 气密封装体 |
JP7168903B2 (ja) * | 2018-09-06 | 2022-11-10 | 日本電気硝子株式会社 | 気密パッケージ |
JP2020057736A (ja) * | 2018-10-04 | 2020-04-09 | 日本電気硝子株式会社 | 気密パッケージ |
KR102656315B1 (ko) * | 2018-10-05 | 2024-04-09 | 에이지씨 가부시키가이샤 | 창재, 광학 패키지 |
CN109896497A (zh) * | 2019-01-31 | 2019-06-18 | 厦门大学 | 一种面向mems封装的纳米玻璃粉回流工艺 |
JP7487601B2 (ja) | 2020-03-31 | 2024-05-21 | 日本電気硝子株式会社 | 接合体の製造方法 |
CN114981227A (zh) * | 2020-03-31 | 2022-08-30 | 日本电气硝子株式会社 | 接合体的制造方法以及接合体 |
CN115213561B (zh) * | 2022-07-29 | 2023-11-24 | 苏州大学 | 添加钛作为过渡层实现玻璃与不锈钢的激光封接方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5180310A (ja) * | 1975-01-06 | 1976-07-13 | Hitachi Ltd | |
JP2943275B2 (ja) * | 1990-08-07 | 1999-08-30 | 住友電気工業株式会社 | 高熱伝導性着色窒化アルミニウム焼結体およびその製造方法 |
JP2000233939A (ja) * | 1999-11-26 | 2000-08-29 | Asahi Techno Glass Corp | 固体撮像素子パッケージ用窓ガラス |
US20060231737A1 (en) * | 2005-04-15 | 2006-10-19 | Asahi Glass Company, Limited | Light emitting diode element |
JP2010140848A (ja) * | 2008-12-15 | 2010-06-24 | Canon Inc | 有機発光装置の製造方法 |
US20110014731A1 (en) * | 2009-07-15 | 2011-01-20 | Kelvin Nguyen | Method for sealing a photonic device |
CN102574727B (zh) * | 2009-10-15 | 2015-06-24 | 旭硝子株式会社 | 有机led元件的散射层用玻璃以及使用该玻璃的有机led元件 |
WO2011130632A1 (en) * | 2010-04-15 | 2011-10-20 | Ferro Corporation | Low-melting lead-free bismuth sealing glasses |
US8871664B2 (en) * | 2010-05-10 | 2014-10-28 | Nippon Electric Glass Co., Ltd. | Refractory filler, sealing material using same, and manufacturing method for refractory filler |
CN102745903A (zh) * | 2011-04-21 | 2012-10-24 | 日本电气硝子株式会社 | 料片及使用其的料片一体型排气管 |
WO2013015414A1 (ja) * | 2011-07-27 | 2013-01-31 | 日本電気硝子株式会社 | 封着材料層付きガラス基板、これを用いた有機elデバイス、及び電子デバイスの製造方法 |
US20130155629A1 (en) * | 2011-12-19 | 2013-06-20 | Tong Hsing Electronic Industries, Ltd. | Hermetic Semiconductor Package Structure and Method for Manufacturing the same |
JP2013239609A (ja) | 2012-05-16 | 2013-11-28 | Asahi Glass Co Ltd | 気密部材とその製造方法 |
KR20140039740A (ko) * | 2012-09-25 | 2014-04-02 | 엘지이노텍 주식회사 | 발광소자 패키지 |
WO2014092013A1 (ja) * | 2012-12-10 | 2014-06-19 | 旭硝子株式会社 | 封着材料、封着材料層付き基板、積層体および電子デバイス |
JP2014236202A (ja) | 2013-06-05 | 2014-12-15 | 旭硝子株式会社 | 発光装置 |
JP6237989B2 (ja) * | 2013-07-24 | 2017-11-29 | 日本電気硝子株式会社 | 電気素子パッケージの製造方法及び電気素子パッケージ |
WO2015060248A1 (ja) * | 2013-10-21 | 2015-04-30 | 日本電気硝子株式会社 | 封着材料 |
CN103840063A (zh) * | 2013-11-15 | 2014-06-04 | 芜湖德豪润达光电科技有限公司 | Led封装基板及其制作方法 |
JP6414076B2 (ja) * | 2013-12-11 | 2018-10-31 | Agc株式会社 | 発光ダイオードパッケージ用カバーガラス、封着構造体および発光装置 |
JP2016027610A (ja) * | 2014-06-27 | 2016-02-18 | 旭硝子株式会社 | パッケージ基板、パッケージ、および電子デバイス |
JP6311530B2 (ja) * | 2014-08-22 | 2018-04-18 | 旭硝子株式会社 | 封着用無鉛ガラス、封着材料、封着材料ペーストおよび封着パッケージ |
WO2017057375A1 (ja) * | 2015-09-30 | 2017-04-06 | 旭硝子株式会社 | 紫外線透過ガラス |
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