JPWO2017212828A1 - 気密パッケージの製造方法及び気密パッケージ - Google Patents
気密パッケージの製造方法及び気密パッケージ Download PDFInfo
- Publication number
- JPWO2017212828A1 JPWO2017212828A1 JP2018522372A JP2018522372A JPWO2017212828A1 JP WO2017212828 A1 JPWO2017212828 A1 JP WO2017212828A1 JP 2018522372 A JP2018522372 A JP 2018522372A JP 2018522372 A JP2018522372 A JP 2018522372A JP WO2017212828 A1 JPWO2017212828 A1 JP WO2017212828A1
- Authority
- JP
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- Prior art keywords
- material layer
- sealing material
- glass lid
- ceramic substrate
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 23
- 239000000945 filler Substances 0.000 claims description 23
- 229910052797 bismuth Inorganic materials 0.000 claims description 17
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 12
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
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- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
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- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
- 229910000500 β-quartz Inorganic materials 0.000 description 1
Images
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/14—Silica-free oxide glass compositions containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C25/00—Surface treatment of fibres or filaments made from glass, minerals or slags
- C03C25/62—Surface treatment of fibres or filaments made from glass, minerals or slags by application of electric or wave energy; by particle radiation or ion implantation
- C03C25/6206—Electromagnetic waves
- C03C25/6208—Laser
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
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- C03C3/142—Silica-free oxide glass compositions containing boron containing lead
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
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- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/59—Aspects relating to the structure of the interlayer
- C04B2237/592—Aspects relating to the structure of the interlayer whereby the interlayer is not continuous, e.g. not the whole surface of the smallest substrate is covered by the interlayer
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/62—Forming laminates or joined articles comprising holes, channels or other types of openings
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Geochemistry & Mineralogy (AREA)
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- Manufacturing & Machinery (AREA)
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Abstract
Description
10 窒化アルミニウム基体
11 ガラス蓋
12 基部
13 枠部
14 内部素子
15 枠部の頂部
16 封着材料層
17 レーザー照射装置
L レーザー光
Claims (15)
- セラミック基体を用意する工程と、
ガラス蓋を用意する工程と、
ガラス蓋上に、照射すべきレーザー光の波長における厚み方向の全光線透過率が10%以上、且つ80%以下になる封着材料層を形成する工程と、
封着材料層を介して、ガラス蓋とセラミック基体とを積層配置する工程と、
ガラス蓋側から封着材料層に向けてレーザー光を照射し、封着材料層を軟化変形させることにより、セラミック基体とガラス蓋とを気密一体化して、気密パッケージを得る工程と、を備えることを特徴とする気密パッケージの製造方法。 - セラミック基体を用意する工程と、
ガラス蓋を用意する工程と、
ガラス蓋上に、波長808nmにおける厚み方向の全光線透過率が10%以上、且つ80%以下になる封着材料層を形成する工程と、
封着材料層を介して、ガラス蓋とセラミック基体とを積層配置する工程と、
ガラス蓋側から封着材料層に向けてレーザー光を照射し、封着材料層を軟化変形させることにより、セラミック基体とガラス蓋とを気密一体化して、気密パッケージを得る工程と、を備えることを特徴とする気密パッケージの製造方法。 - 平均厚みが8.0μm未満になるように、封着材料層を形成することを特徴とする請求項1又は2に記載の気密パッケージの製造方法。
- 少なくともビスマス系ガラス粉末と耐火性フィラー粉末を含む複合粉末を焼成して、ガラス蓋上に封着材料層を形成することを特徴とする請求項1〜3の何れかに記載の気密パッケージの製造方法。
- 基部と基部上に設けられた枠部とを有するセラミック基体を用いることを特徴とする請求項1〜4の何れかに記載の気密パッケージの製造方法。
- セラミック基体が、照射すべきレーザー光を吸収する性質を有することを特徴とする請求項1〜5の何れかに記載の気密パッケージの製造方法。
- 黒色顔料が分散されたセラミック基体を用意する工程と、
ガラス蓋を用意する工程と、
ガラス蓋上に、照射すべきレーザー光の波長における厚み方向の全光線透過率が10%以上、且つ80%以下になる封着材料層を形成する工程と、
封着材料層を介して、ガラス蓋とセラミック基体とを積層配置する工程と、
ガラス蓋側から封着材料層に向けてレーザー光を照射し、封着材料層を軟化変形させると共に、セラミック基体を加熱することにより、セラミック基体とガラス蓋とを気密一体化して、気密パッケージを得る工程と、を備えることを特徴とする気密パッケージの製造方法。 - 封着材料層を介して、セラミック基体とガラス蓋とが気密一体化された気密パッケージにおいて、
波長808nmにおける封着材料層の厚み方向の全光線透過率が10%以上、且つ80%以下であることを特徴とする気密パッケージ。 - 封着材料層の平均厚みが8.0μm未満であることを特徴とする請求項8に記載の気密パッケージ。
- 封着材料層が、少なくともビスマス系ガラス粉末と耐火性フィラー粉末を含む複合粉末の焼結体であることを特徴とする請求項8又は9に記載の気密パッケージ。
- 封着材料層が実質的にレーザー吸収材を含んでいないことを特徴とする請求項8〜10の何れかに記載の気密パッケージ。
- セラミック基体が、基部と基部上に設けられた枠部とを有することを特徴とする請求項8〜11の何れかに記載の気密パッケージ。
- セラミック基体の熱伝導率が1W/(m・K)以上であることを特徴とする請求項8〜12の何れかに記載の気密パッケージ。
- セラミック基体がガラスセラミック、窒化アルミニウム、アルミナの何れか、或いはこれらの複合材料であることを特徴とする請求項8〜13の何れかに記載の気密パッケージ。
- 紫外LED素子、センサー素子、圧電振動素子、樹脂中に量子ドットを分散させた波長変換素子の何れかが収容されていることを特徴とする請求項8〜14の何れかに記載の気密パッケージ。
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CN110249421B (zh) * | 2017-02-07 | 2023-10-24 | 日本电气硝子株式会社 | 气密封装体 |
JP7168903B2 (ja) * | 2018-09-06 | 2022-11-10 | 日本電気硝子株式会社 | 気密パッケージ |
JP2020057736A (ja) * | 2018-10-04 | 2020-04-09 | 日本電気硝子株式会社 | 気密パッケージ |
KR102656315B1 (ko) * | 2018-10-05 | 2024-04-09 | 에이지씨 가부시키가이샤 | 창재, 광학 패키지 |
CN109896497A (zh) * | 2019-01-31 | 2019-06-18 | 厦门大学 | 一种面向mems封装的纳米玻璃粉回流工艺 |
JP7487601B2 (ja) | 2020-03-31 | 2024-05-21 | 日本電気硝子株式会社 | 接合体の製造方法 |
CN114981227A (zh) * | 2020-03-31 | 2022-08-30 | 日本电气硝子株式会社 | 接合体的制造方法以及接合体 |
CN115213561B (zh) * | 2022-07-29 | 2023-11-24 | 苏州大学 | 添加钛作为过渡层实现玻璃与不锈钢的激光封接方法 |
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