JP6698685B2 - シリコン基板を活性化する方法 - Google Patents
シリコン基板を活性化する方法 Download PDFInfo
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- JP6698685B2 JP6698685B2 JP2017549294A JP2017549294A JP6698685B2 JP 6698685 B2 JP6698685 B2 JP 6698685B2 JP 2017549294 A JP2017549294 A JP 2017549294A JP 2017549294 A JP2017549294 A JP 2017549294A JP 6698685 B2 JP6698685 B2 JP 6698685B2
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/1601—Process or apparatus
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
Description
(i)少なくとも1つのシリコン基板を準備する工程、
(ii)パラジウムイオン源、フッ化物イオン源、並びに芳香族カルボン酸、芳香族スルホン酸、芳香族スルフィン酸、芳香族ホスホン酸及び芳香族ホスフィン酸からなる群から選択される(互いに独立した)少なくとも2種の芳香族酸を含む水溶液を、活性化組成物として用いて、前記少なくとも1つのシリコン基板の表面の少なくとも一部を活性化する工程
を所与の順序で含む、方法によって、更に解決される。
(i)少なくとも1つのシリコン基板を準備する工程、
(ii)本発明の活性化組成物を用いて、前記少なくとも1つのシリコン基板の表面の少なくとも一部を活性化する工程
を所与の順序で含む。
(iii)活性化されたシリコン基板上に、金属又は金属合金を無電解めっきする工程
を含んでいてもよい。
(iv)シリコン基板を熱処理し、
それによって金属シリサイドを形成する工程
を含んでいてもよい。
n-ドープポリシリコン基板を、0.1g/lのPd2+イオン(PdSO4から)及び1重量%のHFを含有する水溶液に、室温で120秒間浸漬した。表面は、平均表面被覆率が(32.0±1.3)%で、パラジウム粒子によって不均一に被覆された(図1を参照)。
n-ドープポリシリコン基板を、0.1g/lのPd2+イオン(PdSO4から)、1重量%のHF及び0.5ml/lの氷酢酸を含有する水溶液に、室温で120秒間浸漬した。表面は、平均表面被覆率が(32.0±1.2)%で、パラジウム粒子によって不均一に被覆された(図2を参照)。
n-ドープポリシリコン基板を、0.1g/lのPd2+イオン(PdSO4から)、及び表Iに示す芳香族酸を更に含む1重量%のHFの水溶液に、室温で120秒間浸漬した。結果及び処理条件も同表に示す。
ポリシリコン基板を、0.1g/lのPd2+イオン(PdSO4から)、1重量%のHF、及び以下の表IIに見出し得るようなそれぞれの濃度で、2種以上の芳香族酸をそれぞれ含有する水溶液に、60秒間又は120秒間浸漬した。
n-ドープポリシリコン基板を、例3eの水性活性化組成物に、60秒間(例5a)及び120秒間(例5b)、それぞれ浸漬した。このようにして活性化されたシリコン基板を、それぞれ、pHが4.3で、6g/lのニッケルイオン(硫酸ニッケルとして供給)、錯化剤として、ジカルボン酸、トリカルボン酸及びヒドロキシカルボン酸、並びに還元剤として0.25g/lのジメチルアミノボランを含有する無電解ニッケルめっき浴に、65℃で600秒間浸漬した。
Claims (10)
- シリコン基板を活性化するための活性化組成物であって、パラジウムイオン源及びフッ化物イオン源を含む水溶液であり、前記水溶液が、式(I)及び(II)の芳香族酸から選択される少なくとも2種の芳香族酸を含むことを特徴とする、活性化組成物。
但し、前記活性化組成物における少なくとも2種の芳香族酸は、スルホン酸基を含み、かつ、
前記芳香族スルホン酸において、残りのR 1 〜R 14 の少なくとも1つが、ヒドロキシル及び/又はアミノであることを条件とする。] - 前記少なくとも2種の芳香族酸が、5-アミノ-1-ナフタレンスルホン酸、5-アミノ-2-ナフタレンスルホン酸、及び7-アミノ-4-ヒドロキシ-2-ナフタレンスルホン酸からなる群から選択される、請求項1に記載の活性化組成物。
- 活性化組成物中における前記少なくとも2種の芳香族酸の濃度が、0.1〜1000mg/Lの範囲である、請求項1又は2に記載の活性化組成物。
- 活性化組成物中における前記少なくとも2種の芳香族酸の濃度が、1〜750mg/Lの範囲である、請求項1から3のいずれか一項に記載の活性化組成物。
- メタンスルホン酸、並びに/又は硫酸、塩酸、硝酸、リン酸、臭化水素酸、ヨウ化水素、過塩素酸、王水、次亜塩素酸、ヨウ素酸及び亜硝酸からなる群から選択される鉱酸を含む、請求項1から4のいずれか一項に記載の活性化組成物。
- 少なくとも1つのシリコン基板を活性化するための方法であって、
(i)少なくとも1つのシリコン基板を準備する工程、
(ii)請求項1から5のいずれか一項に記載の活性化組成物を用いて、前記少なくとも1つのシリコン基板の表面の少なくとも一部を活性化する工程
を所与の順序で含む、方法。 - 前記シリコン基板が、酸化ケイ素、ポリシリコン、p-ドープポリシリコン、n-ドープポリシリコン、窒化ケイ素及びオキシ窒化ケイ素で作製された表面を含むことを特徴とする、請求項6に記載の方法。
- 工程(ii)の後に、更なる工程
(iii)活性化された前記シリコン基板上に、金属又は金属合金を無電解めっきする工程
を含むことを特徴とする、請求項6又は7に記載の方法。 - めっきされる前記金属が、銅、コバルト、ニッケル、銅合金、コバルト合金及びニッケル合金から選択される、請求項8に記載の方法。
- 工程(iii)の後に、
(iv)シリコン基板を熱処理し、
それによって金属シリサイドを形成する工程
を更に含むことを特徴とする、請求項6から9のいずれか一項に記載の方法。
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EP15160122 | 2015-03-20 | ||
EP15160122.6 | 2015-03-20 | ||
PCT/EP2016/056047 WO2016150879A1 (en) | 2015-03-20 | 2016-03-18 | Activation method for silicon substrates |
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TWI707061B (zh) * | 2015-11-27 | 2020-10-11 | 德商德國艾托特克公司 | 鈀之電鍍浴組合物及無電電鍍方法 |
CN109251677B (zh) * | 2017-07-13 | 2021-08-13 | 安集微电子科技(上海)股份有限公司 | 一种化学机械抛光液 |
JP7028592B2 (ja) * | 2017-09-19 | 2022-03-02 | 株式会社フジミインコーポレーテッド | 表面処理組成物、表面処理組成物の製造方法、表面処理方法、および半導体基板の製造方法 |
JP2019210501A (ja) * | 2018-06-01 | 2019-12-12 | 奥野製薬工業株式会社 | 無電解ニッケルめっき液用安定剤、並びにそれを用いためっき液、めっき方法及び分析方法 |
AU2019299000B2 (en) * | 2018-07-06 | 2023-01-19 | Merlin Solar Technologies, Inc. | Method for blackening a metallic article |
JP7080781B2 (ja) * | 2018-09-26 | 2022-06-06 | 株式会社東芝 | 多孔質層の形成方法、エッチング方法、物品の製造方法、半導体装置の製造方法、及びめっき液 |
CN113881993A (zh) * | 2021-09-29 | 2022-01-04 | 新阳硅密(上海)半导体技术有限公司 | 一种可优化电镀填孔能力的工艺方法 |
CN114250501A (zh) * | 2021-12-24 | 2022-03-29 | 新阳硅密(上海)半导体技术有限公司 | 一种可连续进行电镀和化镀的设备和方法 |
CN114232062A (zh) * | 2021-12-24 | 2022-03-25 | 新阳硅密(上海)半导体技术有限公司 | 一种金属镀覆设备 |
CN114182333B (zh) * | 2021-12-24 | 2023-06-23 | 新阳硅密(上海)半导体技术有限公司 | 一种共享晶圆夹具的金属镀覆设备和方法 |
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SG11201706122SA (en) | 2017-10-30 |
JP2018510266A (ja) | 2018-04-12 |
PH12017501562A1 (en) | 2018-02-05 |
KR102513653B1 (ko) | 2023-03-23 |
WO2016150879A1 (en) | 2016-09-29 |
US20180019137A1 (en) | 2018-01-18 |
JP2020100901A (ja) | 2020-07-02 |
TW201641745A (zh) | 2016-12-01 |
EP3271500B1 (en) | 2018-06-20 |
KR20170129793A (ko) | 2017-11-27 |
US9960051B2 (en) | 2018-05-01 |
MY187868A (en) | 2021-10-26 |
CN107429399A (zh) | 2017-12-01 |
EP3271500A1 (en) | 2018-01-24 |
JP7037859B2 (ja) | 2022-03-17 |
CN107429399B (zh) | 2020-02-07 |
TWI680206B (zh) | 2019-12-21 |
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