SG11201706122SA - Activation method for silicon substrates - Google Patents
Activation method for silicon substratesInfo
- Publication number
- SG11201706122SA SG11201706122SA SG11201706122SA SG11201706122SA SG11201706122SA SG 11201706122S A SG11201706122S A SG 11201706122SA SG 11201706122S A SG11201706122S A SG 11201706122SA SG 11201706122S A SG11201706122S A SG 11201706122SA SG 11201706122S A SG11201706122S A SG 11201706122SA
- Authority
- SG
- Singapore
- Prior art keywords
- silicon substrates
- activation method
- activation
- substrates
- silicon
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
- H01L21/32053—Deposition of metallic or metal-silicide layers of metal-silicide layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
- C23C18/1882—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
- C23C18/1642—Substrates other than metallic, e.g. inorganic or organic or non-conductive semiconductor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1678—Heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1689—After-treatment
- C23C18/1692—Heat-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
- C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
- C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP15160122 | 2015-03-20 | ||
PCT/EP2016/056047 WO2016150879A1 (en) | 2015-03-20 | 2016-03-18 | Activation method for silicon substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201706122SA true SG11201706122SA (en) | 2017-10-30 |
Family
ID=52692547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201706122SA SG11201706122SA (en) | 2015-03-20 | 2016-03-18 | Activation method for silicon substrates |
Country Status (10)
Country | Link |
---|---|
US (1) | US9960051B2 (en) |
EP (1) | EP3271500B1 (en) |
JP (2) | JP6698685B2 (en) |
KR (1) | KR102513653B1 (en) |
CN (1) | CN107429399B (en) |
MY (1) | MY187868A (en) |
PH (1) | PH12017501562A1 (en) |
SG (1) | SG11201706122SA (en) |
TW (1) | TWI680206B (en) |
WO (1) | WO2016150879A1 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI707061B (en) * | 2015-11-27 | 2020-10-11 | 德商德國艾托特克公司 | Plating bath composition and method for electroless plating of palladium |
CN109251677B (en) * | 2017-07-13 | 2021-08-13 | 安集微电子科技(上海)股份有限公司 | Chemical mechanical polishing solution |
JP7028592B2 (en) * | 2017-09-19 | 2022-03-02 | 株式会社フジミインコーポレーテッド | A surface treatment composition, a method for producing a surface treatment composition, a surface treatment method, and a method for producing a semiconductor substrate. |
JP2019210501A (en) * | 2018-06-01 | 2019-12-12 | 奥野製薬工業株式会社 | Stabilizer for electroless nickel plating solution, electroless nickel plating solution using the same, plating method and analytical method |
WO2020009891A1 (en) * | 2018-07-06 | 2020-01-09 | Merlin Solar Technologies, Inc. | Method for blackening a metallic article |
JP7080781B2 (en) * | 2018-09-26 | 2022-06-06 | 株式会社東芝 | Porous layer forming method, etching method, article manufacturing method, semiconductor device manufacturing method, and plating solution |
CN113881993A (en) * | 2021-09-29 | 2022-01-04 | 新阳硅密(上海)半导体技术有限公司 | Process method capable of optimizing electroplating hole filling capacity |
CN114182333B (en) * | 2021-12-24 | 2023-06-23 | 新阳硅密(上海)半导体技术有限公司 | Metal plating equipment and method for sharing wafer clamp |
CN114232062A (en) * | 2021-12-24 | 2022-03-25 | 新阳硅密(上海)半导体技术有限公司 | Metal plating equipment |
CN114250501A (en) * | 2021-12-24 | 2022-03-29 | 新阳硅密(上海)半导体技术有限公司 | Equipment and method capable of continuously carrying out electroplating and chemical plating |
Family Cites Families (30)
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GB976656A (en) | 1962-09-28 | 1964-12-02 | Lucas Industries Ltd | Electroless nickel plating process |
US4297393A (en) | 1980-02-28 | 1981-10-27 | Rca Corporation | Method of applying thin metal deposits to a substrate |
US4617205A (en) | 1984-12-21 | 1986-10-14 | Omi International Corporation | Formaldehyde-free autocatalytic electroless copper plating |
US5405656A (en) * | 1990-04-02 | 1995-04-11 | Nippondenso Co., Ltd. | Solution for catalytic treatment, method of applying catalyst to substrate and method of forming electrical conductor |
US5753304A (en) * | 1997-06-23 | 1998-05-19 | The Metal Arts Company, Inc. | Activation bath for electroless nickel plating |
US6406743B1 (en) | 1997-07-10 | 2002-06-18 | Industrial Technology Research Institute | Nickel-silicide formation by electroless Ni deposition on polysilicon |
GB0025989D0 (en) * | 2000-10-24 | 2000-12-13 | Shipley Co Llc | Plating catalysts |
US6913651B2 (en) | 2002-03-22 | 2005-07-05 | Blue29, Llc | Apparatus and method for electroless deposition of materials on semiconductor substrates |
US7205233B2 (en) * | 2003-11-07 | 2007-04-17 | Applied Materials, Inc. | Method for forming CoWRe alloys by electroless deposition |
US7169215B2 (en) | 2004-01-02 | 2007-01-30 | Ramot At Tel Aviv University Ltd. | Copper molybdenum electroless deposition process and materials |
JP2006009130A (en) * | 2004-06-29 | 2006-01-12 | Ebara Corp | Method and apparatus for processing substrate |
US20050170650A1 (en) * | 2004-01-26 | 2005-08-04 | Hongbin Fang | Electroless palladium nitrate activation prior to cobalt-alloy deposition |
US20050161338A1 (en) | 2004-01-26 | 2005-07-28 | Applied Materials, Inc. | Electroless cobalt alloy deposition process |
JP2006057167A (en) * | 2004-08-23 | 2006-03-02 | Toyota Motor Corp | Method for forming wiring by plating |
US7220296B1 (en) | 2005-12-15 | 2007-05-22 | Intel Corporation | Electroless plating baths for high aspect features |
KR20080083790A (en) | 2007-03-13 | 2008-09-19 | 삼성전자주식회사 | Eletroless copper plating solution, production process of the same and eletroless copper plating method |
US20100133654A1 (en) * | 2007-06-25 | 2010-06-03 | Hee Han | Method for manufacturing capacitor of semiconductor |
CN101240416B (en) * | 2008-03-06 | 2010-11-17 | 复旦大学 | Chemical palladium-plating method on silicon used for surface enhancement infrared spectrum |
EP2261396B1 (en) * | 2008-03-07 | 2013-05-29 | Japan Science and Technology Agency | Compound material, method of producing the same and apparatus for producing the same |
CN102245806A (en) * | 2008-12-05 | 2011-11-16 | Omg美国公司 | Electroless palladium plating solution and method of use |
CN102108537A (en) * | 2011-01-29 | 2011-06-29 | 常州天合光能有限公司 | Solar battery electroplating pretreatement process |
EP2551375A1 (en) | 2011-07-26 | 2013-01-30 | Atotech Deutschland GmbH | Electroless nickel plating bath composition |
TWI526573B (en) * | 2011-08-17 | 2016-03-21 | 羅門哈斯電子材料有限公司 | Stable catalysts for electroless metallization |
EP2809825B1 (en) | 2012-02-01 | 2018-07-18 | ATOTECH Deutschland GmbH | Electroless nickel plating bath |
EP2626891A3 (en) * | 2012-02-07 | 2018-01-24 | Rohm and Haas Electronic Materials LLC | Activation process to improve metal adhesion |
EP2639335B1 (en) | 2012-03-14 | 2015-09-16 | Atotech Deutschland GmbH | Alkaline plating bath for electroless deposition of cobalt alloys |
EP2671969A1 (en) | 2012-06-04 | 2013-12-11 | ATOTECH Deutschland GmbH | Plating bath for electroless deposition of nickel layers |
FR3002545B1 (en) * | 2013-02-22 | 2016-01-08 | Alchimer | PROCESS FOR FORMING A METAL SILICIDE USING A SOLUTION CONTAINING GOLD IONS AND FLUOR IONS |
JP6388910B2 (en) | 2013-03-27 | 2018-09-12 | アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングAtotech Deutschland GmbH | Electroless copper plating solution |
ES2639300T3 (en) | 2014-12-16 | 2017-10-26 | Atotech Deutschland Gmbh | Plating bath compositions for non-electrolytic plating of metals and metal alloys |
-
2016
- 2016-03-18 TW TW105108607A patent/TWI680206B/en active
- 2016-03-18 SG SG11201706122SA patent/SG11201706122SA/en unknown
- 2016-03-18 WO PCT/EP2016/056047 patent/WO2016150879A1/en active Application Filing
- 2016-03-18 US US15/545,758 patent/US9960051B2/en active Active
- 2016-03-18 EP EP16712782.8A patent/EP3271500B1/en active Active
- 2016-03-18 CN CN201680015500.XA patent/CN107429399B/en active Active
- 2016-03-18 JP JP2017549294A patent/JP6698685B2/en active Active
- 2016-03-18 KR KR1020177027776A patent/KR102513653B1/en active IP Right Grant
- 2016-03-18 MY MYPI2017702907A patent/MY187868A/en unknown
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2017
- 2017-08-31 PH PH12017501562A patent/PH12017501562A1/en unknown
-
2020
- 2020-03-16 JP JP2020045263A patent/JP7037859B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201641745A (en) | 2016-12-01 |
TWI680206B (en) | 2019-12-21 |
CN107429399B (en) | 2020-02-07 |
US9960051B2 (en) | 2018-05-01 |
KR20170129793A (en) | 2017-11-27 |
WO2016150879A1 (en) | 2016-09-29 |
KR102513653B1 (en) | 2023-03-23 |
JP2018510266A (en) | 2018-04-12 |
US20180019137A1 (en) | 2018-01-18 |
JP2020100901A (en) | 2020-07-02 |
EP3271500B1 (en) | 2018-06-20 |
JP7037859B2 (en) | 2022-03-17 |
PH12017501562A1 (en) | 2018-02-05 |
CN107429399A (en) | 2017-12-01 |
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EP3271500A1 (en) | 2018-01-24 |
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