JP6559218B2 - 極紫外線キャッピング層、及び極紫外線キャッピング層の製造及びリソグラフィの方法 - Google Patents
極紫外線キャッピング層、及び極紫外線キャッピング層の製造及びリソグラフィの方法 Download PDFInfo
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- JP6559218B2 JP6559218B2 JP2017500330A JP2017500330A JP6559218B2 JP 6559218 B2 JP6559218 B2 JP 6559218B2 JP 2017500330 A JP2017500330 A JP 2017500330A JP 2017500330 A JP2017500330 A JP 2017500330A JP 6559218 B2 JP6559218 B2 JP 6559218B2
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- layer
- extreme ultraviolet
- capping layer
- reflective
- multilayer stack
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optics & Photonics (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- High Energy & Nuclear Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Optical Elements Other Than Lenses (AREA)
Description
Claims (12)
- 極紫外線反射素子を製造する方法であって、
基板を提供することと、
前記基板に多層スタックを形成することであって、前記多層スタックが、ブラッグリフレクタを形成するために、第1の反射層と第2の反射層とを有する複数の反射層ペアを含む、形成することと、
前記多層スタックの上に被せてキャッピング層を形成することであって、ルテニウムタングステンから形成され、且つ酸化及び物理的浸食を減らすことによって前記多層スタックを保護する、キャッピング層を形成することと
を含む方法。 - 前記キャッピング層を形成することが、物理的気相堆積を使用して前記キャッピング層を形成することと、20オングストロームと50オングストロームの間の厚さを有する前記キャッピング層、及び極紫外線に対して透明である前記キャッピング層を形成することを含む、請求項1に記載の方法。
- 前記キャッピング層を形成することが、5.5以上のモース硬度を有する前記キャッピング層を形成することを含む、請求項1に記載の方法。
- 前記キャッピング層を形成することが、0.2ナノメートル二乗平均平方根(RMS)未満の表面粗度を有する前記キャッピング層を形成することを含む、請求項1に記載の方法。
- 極紫外線反射素子であって、
基板と、
前記基板上の多層スタックであって、第1の反射層と、第2の反射層とを有する複数の反射層ペアを含む多層スタックと、
前記多層スタックの上に被せられたキャッピング層であって、ルテニウムタングステンから形成され、酸化及び物理的浸食を減らすことによって、前記多層スタックを保護するキャッピング層と
を備える、極紫外線反射素子。 - 前記キャッピング層が、物理的気相堆積によって形成されたことによる特性を有し、20オングストロームと50オングストロームの間の厚さを有し、極紫外線に対して透明である、請求項5に記載の極紫外線反射素子。
- 前記キャッピング層が、5.5以上のモース硬度を有する、請求項5に記載の極紫外線反射素子。
- 前記キャッピング層が、0.2ナノメートル二乗平均平方根(RMS)未満の表面粗度を有する、請求項5に記載の極紫外線反射素子。
- 極紫外線リソグラフィシステムであって、
極紫外線を生成する極紫外線源と、
基板上の多層スタックを含む、前記極紫外線を反射可能な反射素子であって、前記多層スタックが第1の反射層と第2の反射層とを有する複数の反射層ペアを含む、反射素子と、
前記多層スタック上のキャッピング層であって、ルテニウムタングステンから形成されるキャッピング層と、
を備える極紫外線リソグラフィシステム。 - 前記キャッピング層が、20オングストロームと50オングストロームの間の厚さを有し、極紫外線に対して透明である、請求項9に記載の極紫外線リソグラフィシステム。
- 前記キャッピング層が、5.5以上のモース硬度を有する、請求項9に記載の極紫外線リソグラフィシステム。
- 前記キャッピング層が、0.2ナノメートル二乗平均平方根(RMS)未満の表面粗度を有する、請求項9に記載の極紫外線リソグラフィシステム。
Applications Claiming Priority (5)
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US201462023438P | 2014-07-11 | 2014-07-11 | |
US62/023,438 | 2014-07-11 | ||
US14/696,322 | 2015-04-24 | ||
US14/696,322 US9739913B2 (en) | 2014-07-11 | 2015-04-24 | Extreme ultraviolet capping layer and method of manufacturing and lithography thereof |
PCT/US2015/039158 WO2016007394A1 (en) | 2014-07-11 | 2015-07-03 | Extreme ultraviolet capping layer and method of manufacturing and lithography thereof |
Publications (2)
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JP2017521711A JP2017521711A (ja) | 2017-08-03 |
JP6559218B2 true JP6559218B2 (ja) | 2019-08-14 |
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JP2017500330A Active JP6559218B2 (ja) | 2014-07-11 | 2015-07-03 | 極紫外線キャッピング層、及び極紫外線キャッピング層の製造及びリソグラフィの方法 |
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US (1) | US9739913B2 (ja) |
EP (1) | EP3167472A4 (ja) |
JP (1) | JP6559218B2 (ja) |
KR (1) | KR102405253B1 (ja) |
CN (1) | CN106663601B (ja) |
MY (1) | MY182792A (ja) |
SG (1) | SG11201610504QA (ja) |
TW (1) | TWI655458B (ja) |
WO (1) | WO2016007394A1 (ja) |
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-
2015
- 2015-04-24 US US14/696,322 patent/US9739913B2/en active Active
- 2015-07-03 WO PCT/US2015/039158 patent/WO2016007394A1/en active Application Filing
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- 2015-07-03 JP JP2017500330A patent/JP6559218B2/ja active Active
- 2015-07-03 KR KR1020177003861A patent/KR102405253B1/ko active IP Right Grant
- 2015-07-03 SG SG11201610504QA patent/SG11201610504QA/en unknown
- 2015-07-03 CN CN201580036643.4A patent/CN106663601B/zh active Active
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US9739913B2 (en) | 2017-08-22 |
EP3167472A4 (en) | 2018-03-14 |
WO2016007394A1 (en) | 2016-01-14 |
EP3167472A1 (en) | 2017-05-17 |
KR20170031199A (ko) | 2017-03-20 |
KR102405253B1 (ko) | 2022-06-02 |
CN106663601B (zh) | 2020-01-10 |
CN106663601A (zh) | 2017-05-10 |
US20160011344A1 (en) | 2016-01-14 |
TW201606358A (zh) | 2016-02-16 |
TWI655458B (zh) | 2019-04-01 |
MY182792A (en) | 2021-02-05 |
JP2017521711A (ja) | 2017-08-03 |
SG11201610504QA (en) | 2017-01-27 |
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