JP6363202B2 - 化学機械平坦化用金属酸化物‐ポリマー複合粒子 - Google Patents
化学機械平坦化用金属酸化物‐ポリマー複合粒子 Download PDFInfo
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- JP6363202B2 JP6363202B2 JP2016540653A JP2016540653A JP6363202B2 JP 6363202 B2 JP6363202 B2 JP 6363202B2 JP 2016540653 A JP2016540653 A JP 2016540653A JP 2016540653 A JP2016540653 A JP 2016540653A JP 6363202 B2 JP6363202 B2 JP 6363202B2
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- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical class OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229940081066 picolinic acid Drugs 0.000 description 1
- 229920002432 poly(vinyl methyl ether) polymer Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- HSJXWMZKBLUOLQ-UHFFFAOYSA-M potassium;2-dodecylbenzenesulfonate Chemical compound [K+].CCCCCCCCCCCCC1=CC=CC=C1S([O-])(=O)=O HSJXWMZKBLUOLQ-UHFFFAOYSA-M 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001812 pycnometry Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- LOAUVZALPPNFOQ-UHFFFAOYSA-N quinaldic acid Chemical compound C1=CC=CC2=NC(C(=O)O)=CC=C21 LOAUVZALPPNFOQ-UHFFFAOYSA-N 0.000 description 1
- 239000012066 reaction slurry Substances 0.000 description 1
- 230000002468 redox effect Effects 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical compound O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000004819 silanols Chemical class 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 238000002336 sorption--desorption measurement Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- SWAXTRYEYUTSAP-UHFFFAOYSA-N tert-butyl ethaneperoxoate Chemical compound CC(=O)OOC(C)(C)C SWAXTRYEYUTSAP-UHFFFAOYSA-N 0.000 description 1
- 150000003585 thioureas Chemical class 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F130/00—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
- C08F130/04—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
- C08F130/08—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/18—Other polishing compositions based on non-waxy substances on other substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
- C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
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- C—CHEMISTRY; METALLURGY
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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Description
本件は、その開示が参照により本開示に組み入れられる米国仮出願第61/919251号(2013年12月20日出願)に関し、35U.S.C.§119(e)に基づく優先権を主張する。
CMPとしても知られる化学機械平坦化は、プロセス中に半導体ウェハーの上面を、若しくはその後の工程の調製において他の基材を平坦化するのに用いられ、又はその位置にしたがい材料を選択的に除去する技術である。化学的及び機械的作用の両方が一般的に含まれる。
本開示に記載された実施態様は、金属酸化物‐ポリマー複合粒子に関する。種々の実装において、複合粒子は、例えば、化学機械平坦化(CMP)等の化学及び研削作用の組み合わせを通じた、加工対象からの材料の除去のための方法、組成物又は装置において用いられる。複合粒子は、ガラス、セラミック、歯科材料、ソーラーパネル又はこれらの構成要素等の種々の材料、光学表面、光電池又はこれらの構成要素などの研磨に好適な研磨動作、材料及び/又は装置においても用いることができる。
例が実施され、金属酸化物‐ポリマー複合粒子の4種のサンプルが調製された。金属酸化物(MO)は、ヒュームドシリカ又はヒュームド及びコロイド状(ゾルゲル)シリカの混合物であった。具体的には、金属酸化物は、L‐90ヒュームドシリカ(商品名Cab‐O‐Sperse1015A)の安定な分散液、及び任意選択的に25nmのゾルゲルシリカ(商品名ST‐O40)を含んでいた(両方がCabot Corporationから入手可能)。用いられたポリマーはポリ‐メタクリルオキシプロピルトリメトキシシラン(pMPS)であり、ラジカル開始剤はアゾビスイソブチロニトリル(AIBN)であった。
本開示は以下も包含する。
[1]
化学及び研削作用を通して基材から材料を除去する方法であって、方法は、
研磨パッド又はスラリー組成物又は両方が、金属酸化物粒子とポリマーコアとを含む金属酸化物‐ポリマー複合粒子を含む、研磨パッド又はスラリー組成物により、基材から材料を除去して処理された表面を作り出すことを含み、
金属酸化物粒子が修飾剤により修飾されており、金属酸化物粒子の一部が、ポリマーコア内に部分的に又は完全に埋め込まれている、方法。
[2]
処理された表面を洗浄することをさらに含む、上記態様1に記載の方法。
[3]
金属酸化粒子が、修飾剤により修飾されており、金属酸化物粒子が、修飾剤を介してポリマーコアにおけるポリマーに共有結合されている、上記態様1又は2に記載の方法。
[4]
ポリマーコアが、修飾剤と同一又は異なるポリマーを含む、上記態様1〜3のいずれかに記載の方法。
[5]
金属酸化物粒子の一部が、ポリマーコア内に部分的に又は完全に埋め込まれている、上記態様1〜4のいずれかに記載の方法。
[6]
金属酸化物‐ポリマー複合粒子が、CMP化学エッチング液、CMP処理加速剤、及びCMP保護剤からなる群から選択される1種又はそれより多くの材料をさらに含む、上記態様1〜5のいずれかに記載の方法。
[7]
CMPスラリー組成物が、界面活性剤、レオロジー剤、防蝕剤、酸化剤、キレート剤、錯化剤、金属酸化物‐ポリマー複合粒子以外の粒子、又はこれらの任意の組合せをさらに含む、上記態様1〜6のいずれかに記載の方法。
[8]
水性媒体中に分散した金属酸化物‐ポリマー複合粒子を含む、CMPスラリー組成物であって、金属酸化物‐ポリマー複合粒子が、金属酸化物粒子とポリマーコアとを含み、
金属酸化物粒子が修飾剤により修飾されており、金属酸化物粒子の一部が、ポリマーコア内に部分的に又は完全に埋め込まれている、CMPスラリー組成物。
[9]
金属酸化粒子が、修飾剤により修飾されており、金属酸化物粒子が、修飾剤を介してポリマーコアにおけるポリマーに共有結合されている、上記態様8に記載のCMPスラリー組成物。
[10]
ポリマーコアが、修飾剤のポリマー又はコポリマーを含む、上記態様8又は9に記載のCMPスラリー組成物。
[11]
金属酸化物‐ポリマー複合粒子が、少なくとも1種の追加の修飾剤により処理されている、上記態様8〜10のいずれかに記載のCMPスラリー組成物。
[12]
金属酸化物‐ポリマー粒子が、約20nmから約500nmの範囲内の体積平均直径を有する、上記態様8〜11のいずれかに記載のCMPスラリー組成物。
[13]
ポリマーコアが、スチレンのポリマー、非置換の、又は置換されたアクリレート又はメタクリレート、オレフィン、ビニルエステル、及びアクリロニトリル、並びに上記のコポリマー及び混合物を含む、上記態様8〜12のいずれかに記載のCMPスラリー組成物。
[14]
金属酸化物粒子が、沈殿した、発熱性の、又はゾルゲル金属酸化物粒子、又はこれらの2種若しくはそれより多くの混合物を含む、上記態様8〜13のいずれかに記載のCMPスラリー組成物。
[15]
金属酸化物粒子が、シリカ、アルミナ、セリア、チタニア、ジルコニア、酸化亜鉛、酸化鉄、酸化ニオブ、酸化バナジウム、酸化タングステン、酸化スズ、酸化バリウム、酸化ストロンチウム、酸化カルシウム、酸化マグネシウム、酸化リン、これらの任意の2種又はそれより多くの混合物及び混合酸化物からなる群から選択される、上記態様8〜14のいずれかに記載のCMPスラリー組成物。
[16]
金属酸化物が、ヒュームドシリカを含む、上記態様8〜15のいずれかに記載のCMPスラリー組成物。
[17]
金属酸化物‐ポリマー複合粒子が、CMP化学エッチング液、CMP処理加速剤、及びCMP保護剤からなる群から選択される1種又はそれより多くの材料をさらに含む、上記態様8〜16のいずれかに記載のCMPスラリー組成物。
[18]
ポリマーコアが、金属酸化物と組成が異なる無機材料を含む、上記態様8〜17のいずれかに記載のCMPスラリー組成物。
[19]
金属酸化物粒子とポリマーコアとを含む金属酸化物‐ポリマー複合粒子を含む、CMP研磨パッドであって、金属酸化物粒子が修飾剤により修飾されており、金属酸化物粒子の一部が、ポリマーコア内に部分的に又は完全に埋め込まれている、CMP研磨パッド。
[20]
金属酸化粒子が、修飾剤により修飾されており、金属酸化物粒子が、修飾剤を介してポリマーコアにおけるポリマーに共有結合されている、上記態様19に記載のCMP研磨パッド。
[21]
金属酸化物‐ポリマー複合粒子が、CMP化学エッチング液、CMP処理加速剤、及びCMP保護剤からなる群から選択される1種又はそれより多くの材料をさらに含む、上記態様19又は20に記載のCMP研磨パッド。
[22]
金属酸化物粒子と、
ポリマーコアと、
CMP化学エッチング液、CMP処理加速剤、及びCMP保護剤からなる群から選択される1種又はそれより多くの材料と、
を含む、金属酸化物‐ポリマー複合粒子であって、
金属酸化物粒子の一部が、ポリマーコア内に部分的に又は完全に埋め込まれている、金属酸化物‐ポリマー複合粒子。
Claims (18)
- 化学及び研削作用を通して基材から材料を除去する方法であって、方法は、
研磨パッド又はスラリー組成物又は両方が、複数の金属酸化物粒子とポリマーコアとを含む金属酸化物‐ポリマー複合粒子を含む、研磨パッド又はスラリー組成物により、基材から材料を除去して処理された表面を作り出すことを含み、
金属酸化物粒子が修飾剤により修飾されており、金属酸化物粒子の一部が、ポリマーコア内に部分的に埋め込まれ、かつ、ポリマーコアから突き出ており、
金属酸化物粒子が、修飾剤を介してポリマーコアにおけるポリマーに共有結合されている、方法。 - 処理された表面を洗浄することをさらに含む、請求項1に記載の方法。
- ポリマーコアが、修飾剤と同一又は異なるポリマーを含む、請求項1又は2に記載の方法。
- 金属酸化物‐ポリマー複合粒子が、CMP化学エッチング剤、CMP処理加速剤、及びCMP保護剤からなる群から選択される1種又はそれより多くの材料をさらに含む、請求項1〜3のいずれか1項に記載の方法。
- CMPスラリー組成物が、界面活性剤、レオロジー剤、防蝕剤、酸化剤、キレート剤、錯化剤、金属酸化物‐ポリマー複合粒子以外の粒子、又はこれらの任意の組合せをさらに含む、請求項1〜4のいずれか1項に記載の方法。
- 水性媒体中に分散した金属酸化物‐ポリマー複合粒子を含む、CMPスラリー組成物であって、金属酸化物‐ポリマー複合粒子が、複数の金属酸化物粒子とポリマーコアとを含み、
金属酸化物粒子が修飾剤により修飾されており、金属酸化物粒子の一部が、ポリマーコア内に部分的に埋め込まれ、かつ、ポリマーコアから突き出ており、
金属酸化物粒子が、修飾剤を介してポリマーコアにおけるポリマーに共有結合されている、CMPスラリー組成物。 - ポリマーコアが、修飾剤のポリマー又はコポリマーを含む、請求項6に記載のCMPスラリー組成物。
- 金属酸化物‐ポリマー複合粒子が、少なくとも1種の追加の修飾剤により処理されている、請求項6又は7に記載のCMPスラリー組成物。
- 金属酸化物‐ポリマー粒子が、20nmから500nmの範囲内の体積平均直径を有する、請求項6〜8のいずれか1項に記載のCMPスラリー組成物。
- ポリマーコアが、スチレンのポリマー、非置換の、又は置換されたアクリレート又はメタクリレート、オレフィン、ビニルエステル、及びアクリロニトリル、並びに上記のコポリマー及び混合物を含む、請求項6〜9のいずれか1項に記載のCMPスラリー組成物。
- 金属酸化物粒子が、沈殿した、発熱性の、又はゾルゲル金属酸化物粒子、又はこれらの2種若しくはそれより多くの混合物を含む、請求項6〜10のいずれか1項に記載のCMPスラリー組成物。
- 金属酸化物粒子が、シリカ、アルミナ、セリア、チタニア、ジルコニア、酸化亜鉛、酸化鉄、酸化ニオブ、酸化バナジウム、酸化タングステン、酸化スズ、酸化バリウム、酸化ストロンチウム、酸化カルシウム、酸化マグネシウム、酸化リン、これらの任意の2種又はそれより多くの混合物及び混合酸化物からなる群から選択される、請求項6〜11のいずれか1項に記載のCMPスラリー組成物。
- 金属酸化物が、ヒュームドシリカを含む、請求項6〜12のいずれか1項に記載のCMPスラリー組成物。
- 金属酸化物‐ポリマー複合粒子が、CMP化学エッチング剤、CMP処理加速剤、及びCMP保護剤からなる群から選択される1種又はそれより多くの材料をさらに含む、請求項6〜13のいずれか1項に記載のCMPスラリー組成物。
- ポリマーコアが、金属酸化物と組成が異なる無機材料を含む、請求項6〜14のいずれか1項に記載のCMPスラリー組成物。
- 複数の金属酸化物粒子とポリマーコアとを含む金属酸化物‐ポリマー複合粒子を含む、CMP研磨パッドであって、金属酸化物粒子が、修飾剤により修飾されており、金属酸化物粒子の一部が、ポリマーコア内に部分的に埋め込まれ、かつ、ポリマーコアから突き出ており、金属酸化物粒子が、修飾剤を介してポリマーコアにおけるポリマーに共有結合されている、CMP研磨パッド。
- 金属酸化物‐ポリマー複合粒子が、CMP化学エッチング剤、CMP処理加速剤、及びCMP保護剤からなる群から選択される1種又はそれより多くの材料をさらに含む、請求項16に記載のCMP研磨パッド。
- 複数の金属酸化物粒子と、
ポリマーコアと、
CMP化学エッチング剤、CMP処理加速剤、及びCMP保護剤からなる群から選択される1種又はそれより多くの材料と、
を含む、金属酸化物‐ポリマー複合粒子であって、
金属酸化物粒子の一部が、ポリマーコア内に部分的に埋め込まれ、かつ、ポリマーコアから突き出ており、
金属酸化物粒子が、修飾剤により修飾されており、金属酸化物粒子が、修飾剤を介してポリマーコアにおけるポリマーに共有結合されている、金属酸化物‐ポリマー複合粒子。
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