JP6047132B2 - 老朽化したプリント回路基板のリサイクル方法 - Google Patents
老朽化したプリント回路基板のリサイクル方法 Download PDFInfo
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- JP6047132B2 JP6047132B2 JP2014197031A JP2014197031A JP6047132B2 JP 6047132 B2 JP6047132 B2 JP 6047132B2 JP 2014197031 A JP2014197031 A JP 2014197031A JP 2014197031 A JP2014197031 A JP 2014197031A JP 6047132 B2 JP6047132 B2 JP 6047132B2
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- Prior art keywords
- acid
- composition
- pwb
- triazole
- leaching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000000203 mixture Substances 0.000 claims description 472
- 238000000034 method Methods 0.000 claims description 213
- 238000002386 leaching Methods 0.000 claims description 163
- 229910000510 noble metal Inorganic materials 0.000 claims description 160
- 239000010931 gold Substances 0.000 claims description 152
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 148
- 229910052737 gold Inorganic materials 0.000 claims description 148
- 239000010953 base metal Substances 0.000 claims description 112
- 229910000679 solder Inorganic materials 0.000 claims description 105
- 229910052751 metal Inorganic materials 0.000 claims description 104
- 239000002184 metal Substances 0.000 claims description 104
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 96
- 229910001868 water Inorganic materials 0.000 claims description 85
- 239000010949 copper Substances 0.000 claims description 81
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 79
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 78
- 229910052802 copper Inorganic materials 0.000 claims description 75
- 239000007800 oxidant agent Substances 0.000 claims description 72
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 claims description 61
- -1 2,6-diaminobenzenesulfonic acid 3,5-diaminobenzenes Chemical class 0.000 claims description 56
- 229910052718 tin Inorganic materials 0.000 claims description 52
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 50
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 43
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical group I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 43
- 229910017604 nitric acid Inorganic materials 0.000 claims description 43
- 229940098779 methanesulfonic acid Drugs 0.000 claims description 39
- 239000003365 glass fiber Substances 0.000 claims description 38
- 239000003795 chemical substances by application Substances 0.000 claims description 37
- 229910052715 tantalum Inorganic materials 0.000 claims description 36
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 34
- 150000001875 compounds Chemical class 0.000 claims description 32
- 150000002739 metals Chemical class 0.000 claims description 29
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 25
- 239000003638 chemical reducing agent Substances 0.000 claims description 24
- 239000002253 acid Substances 0.000 claims description 21
- 239000012964 benzotriazole Substances 0.000 claims description 21
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 claims description 19
- 238000005363 electrowinning Methods 0.000 claims description 17
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 16
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 15
- 229940071870 hydroiodic acid Drugs 0.000 claims description 15
- 150000003839 salts Chemical class 0.000 claims description 15
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 14
- 239000011684 sodium molybdate Substances 0.000 claims description 14
- 235000015393 sodium molybdate Nutrition 0.000 claims description 14
- TVXXNOYZHKPKGW-UHFFFAOYSA-N sodium molybdate (anhydrous) Chemical compound [Na+].[Na+].[O-][Mo]([O-])(=O)=O TVXXNOYZHKPKGW-UHFFFAOYSA-N 0.000 claims description 14
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 13
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 13
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 11
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 8
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 8
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 6
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 6
- SUMDYPCJJOFFON-UHFFFAOYSA-N isethionic acid Chemical compound OCCS(O)(=O)=O SUMDYPCJJOFFON-UHFFFAOYSA-N 0.000 claims description 6
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 claims description 6
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 6
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 5
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 150000004694 iodide salts Chemical group 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- NHAZGSRLKBTDBF-UHFFFAOYSA-N 1,2,4-triazol-1-amine Chemical compound NN1C=NC=N1 NHAZGSRLKBTDBF-UHFFFAOYSA-N 0.000 claims description 4
- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical compound SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 claims description 4
- UNUKEKVIHNLAMU-UHFFFAOYSA-N 2,3,4,6-tetrahydroxybenzenesulfonic acid Chemical compound OC1=CC(O)=C(S(O)(=O)=O)C(O)=C1O UNUKEKVIHNLAMU-UHFFFAOYSA-N 0.000 claims description 4
- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 claims description 4
- ZCLXQTGLKVQKFD-UHFFFAOYSA-N 3-hydroxybenzenesulfonic acid Chemical compound OC1=CC=CC(S(O)(=O)=O)=C1 ZCLXQTGLKVQKFD-UHFFFAOYSA-N 0.000 claims description 4
- WZUUZPAYWFIBDF-UHFFFAOYSA-N 5-amino-1,2-dihydro-1,2,4-triazole-3-thione Chemical compound NC1=NNC(S)=N1 WZUUZPAYWFIBDF-UHFFFAOYSA-N 0.000 claims description 4
- AJNQPSCMOSUVKK-UHFFFAOYSA-N 5-propan-2-yl-1h-1,2,4-triazole Chemical compound CC(C)C=1N=CNN=1 AJNQPSCMOSUVKK-UHFFFAOYSA-N 0.000 claims description 4
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims description 4
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 4
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 4
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 claims description 4
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 4
- 235000009518 sodium iodide Nutrition 0.000 claims description 4
- 235000010344 sodium nitrate Nutrition 0.000 claims description 4
- 239000004317 sodium nitrate Substances 0.000 claims description 4
- MPSUGQWRVNRJEE-UHFFFAOYSA-N triazol-1-amine Chemical compound NN1C=CN=N1 MPSUGQWRVNRJEE-UHFFFAOYSA-N 0.000 claims description 4
- XZXYQEHISUMZAT-UHFFFAOYSA-N 2-[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=CC=C(C)C=2)O)=C1 XZXYQEHISUMZAT-UHFFFAOYSA-N 0.000 claims description 3
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 claims description 3
- BGIVXKVLORRHQX-UHFFFAOYSA-N 2-methylprop-1-ene-1-sulfonic acid Chemical compound CC(C)=CS(O)(=O)=O BGIVXKVLORRHQX-UHFFFAOYSA-N 0.000 claims description 3
- JMTMSDXUXJISAY-UHFFFAOYSA-N 2H-benzotriazol-4-ol Chemical compound OC1=CC=CC2=C1N=NN2 JMTMSDXUXJISAY-UHFFFAOYSA-N 0.000 claims description 3
- YTZPUTADNGREHA-UHFFFAOYSA-N 2h-benzo[e]benzotriazole Chemical compound C1=CC2=CC=CC=C2C2=NNN=C21 YTZPUTADNGREHA-UHFFFAOYSA-N 0.000 claims description 3
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 3
- YZTYEGCWRPJWEE-UHFFFAOYSA-N 5-(benzotriazol-2-yl)pentan-1-amine Chemical compound C1=CC=CC2=NN(CCCCCN)N=C21 YZTYEGCWRPJWEE-UHFFFAOYSA-N 0.000 claims description 3
- HCEKEODXLSQFDV-UHFFFAOYSA-N 5-methyltriazol-1-amine Chemical compound CC1=CN=NN1N HCEKEODXLSQFDV-UHFFFAOYSA-N 0.000 claims description 3
- AOCDQWRMYHJTMY-UHFFFAOYSA-N 5-nitro-2h-benzotriazole Chemical compound C1=C([N+](=O)[O-])C=CC2=NNN=C21 AOCDQWRMYHJTMY-UHFFFAOYSA-N 0.000 claims description 3
- WXSBVEKBZGNSDY-UHFFFAOYSA-N 5-phenyl-2h-benzotriazole Chemical compound C1=CC=CC=C1C1=CC2=NNN=C2C=C1 WXSBVEKBZGNSDY-UHFFFAOYSA-N 0.000 claims description 3
- UNMYWSMUMWPJLR-UHFFFAOYSA-L Calcium iodide Chemical compound [Ca+2].[I-].[I-] UNMYWSMUMWPJLR-UHFFFAOYSA-L 0.000 claims description 3
- 229910000978 Pb alloy Inorganic materials 0.000 claims description 3
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 3
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 229940107816 ammonium iodide Drugs 0.000 claims description 3
- KBKZYWOOZPIUJT-UHFFFAOYSA-N azane;hypochlorous acid Chemical compound N.ClO KBKZYWOOZPIUJT-UHFFFAOYSA-N 0.000 claims description 3
- 229910001640 calcium iodide Inorganic materials 0.000 claims description 3
- 229940046413 calcium iodide Drugs 0.000 claims description 3
- 238000007323 disproportionation reaction Methods 0.000 claims description 3
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 claims description 3
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 claims description 3
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 claims description 3
- BLQJIBCZHWBKSL-UHFFFAOYSA-L magnesium iodide Chemical compound [Mg+2].[I-].[I-] BLQJIBCZHWBKSL-UHFFFAOYSA-L 0.000 claims description 3
- 229910001641 magnesium iodide Inorganic materials 0.000 claims description 3
- WLGDAKIJYPIYLR-UHFFFAOYSA-N octane-1-sulfonic acid Chemical compound CCCCCCCCS(O)(=O)=O WLGDAKIJYPIYLR-UHFFFAOYSA-N 0.000 claims description 3
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 3
- 229960004839 potassium iodide Drugs 0.000 claims description 3
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 claims description 3
- HNDXKIMMSFCCFW-UHFFFAOYSA-N propane-2-sulphonic acid Chemical compound CC(C)S(O)(=O)=O HNDXKIMMSFCCFW-UHFFFAOYSA-N 0.000 claims description 3
- 229940083599 sodium iodide Drugs 0.000 claims description 3
- 125000005207 tetraalkylammonium group Chemical group 0.000 claims description 3
- ZCWKIFAQRXNZCH-UHFFFAOYSA-M tetramethylazanium;perchlorate Chemical compound C[N+](C)(C)C.[O-]Cl(=O)(=O)=O ZCWKIFAQRXNZCH-UHFFFAOYSA-M 0.000 claims description 3
- SPXOTSHWBDUUMT-UHFFFAOYSA-N 138-42-1 Chemical compound OS(=O)(=O)C1=CC=C([N+]([O-])=O)C=C1 SPXOTSHWBDUUMT-UHFFFAOYSA-N 0.000 claims description 2
- RLIDQZXQFBZZRI-UHFFFAOYSA-N 2,3,4,5-tetrahydroxybenzenesulfonic acid Chemical compound OC1=CC(S(O)(=O)=O)=C(O)C(O)=C1O RLIDQZXQFBZZRI-UHFFFAOYSA-N 0.000 claims description 2
- RUESGWAQQFPVIF-UHFFFAOYSA-N 2,3,4-trihydroxybenzenesulfonic acid Chemical compound OC1=CC=C(S(O)(=O)=O)C(O)=C1O RUESGWAQQFPVIF-UHFFFAOYSA-N 0.000 claims description 2
- IQSNOBRLEUDOAF-UHFFFAOYSA-N 2,3,5,6-tetrahydroxybenzenesulfonic acid Chemical compound OC1=CC(O)=C(O)C(S(O)(=O)=O)=C1O IQSNOBRLEUDOAF-UHFFFAOYSA-N 0.000 claims description 2
- NIRNCHUTYHSUSR-UHFFFAOYSA-N 2,3,5-trihydroxybenzenesulfonic acid Chemical compound OC1=CC(O)=C(O)C(S(O)(=O)=O)=C1 NIRNCHUTYHSUSR-UHFFFAOYSA-N 0.000 claims description 2
- APFTZGWMGKJYBL-UHFFFAOYSA-N 2,3,6-trihydroxybenzenesulfonic acid Chemical compound OC1=CC=C(O)C(S(O)(=O)=O)=C1O APFTZGWMGKJYBL-UHFFFAOYSA-N 0.000 claims description 2
- UGEHFOSBNBEWMP-UHFFFAOYSA-N 2,3-diaminobenzenesulfonic acid Chemical compound NC1=CC=CC(S(O)(=O)=O)=C1N UGEHFOSBNBEWMP-UHFFFAOYSA-N 0.000 claims description 2
- XJLCMPSREKXGAK-UHFFFAOYSA-N 2,3-dimethoxybenzenesulfonic acid Chemical compound COC1=CC=CC(S(O)(=O)=O)=C1OC XJLCMPSREKXGAK-UHFFFAOYSA-N 0.000 claims description 2
- IORISFYTXJVNFE-UHFFFAOYSA-N 2,3-dinitrobenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC([N+]([O-])=O)=C1[N+]([O-])=O IORISFYTXJVNFE-UHFFFAOYSA-N 0.000 claims description 2
- UTONEBGRZQYUKQ-UHFFFAOYSA-N 2,4,5-trihydroxybenzenesulfonic acid Chemical compound OC1=CC(O)=C(S(O)(=O)=O)C=C1O UTONEBGRZQYUKQ-UHFFFAOYSA-N 0.000 claims description 2
- MGRLXPDNBRDFQX-UHFFFAOYSA-N 2,4,6-triaminobenzenesulfonic acid Chemical compound NC1=CC(N)=C(S(O)(=O)=O)C(N)=C1 MGRLXPDNBRDFQX-UHFFFAOYSA-N 0.000 claims description 2
- JLYIGXJCYFBIJB-UHFFFAOYSA-N 2,4,6-trihydroxybenzenesulfonic acid Chemical compound OC1=CC(O)=C(S(O)(=O)=O)C(O)=C1 JLYIGXJCYFBIJB-UHFFFAOYSA-N 0.000 claims description 2
- RTBNEJHMNWQEBM-UHFFFAOYSA-N 2,4,6-trimethoxybenzenesulfonic acid Chemical compound COC1=CC(OC)=C(S(O)(=O)=O)C(OC)=C1 RTBNEJHMNWQEBM-UHFFFAOYSA-N 0.000 claims description 2
- NHJVRSWLHSJWIN-UHFFFAOYSA-N 2,4,6-trinitrobenzenesulfonic acid Chemical compound OS(=O)(=O)C1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O NHJVRSWLHSJWIN-UHFFFAOYSA-N 0.000 claims description 2
- JVMSQRAXNZPDHF-UHFFFAOYSA-N 2,4-diaminobenzenesulfonic acid Chemical compound NC1=CC=C(S(O)(=O)=O)C(N)=C1 JVMSQRAXNZPDHF-UHFFFAOYSA-N 0.000 claims description 2
- ZPHMCVPMYLSOJH-UHFFFAOYSA-N 2,4-dimethoxybenzenesulfonic acid Chemical compound COC1=CC=C(S(O)(=O)=O)C(OC)=C1 ZPHMCVPMYLSOJH-UHFFFAOYSA-N 0.000 claims description 2
- GWGBNENHEGYJSN-UHFFFAOYSA-N 2,4-dinitrobenzenesulfonic acid;hydrate Chemical compound O.OS(=O)(=O)C1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O GWGBNENHEGYJSN-UHFFFAOYSA-N 0.000 claims description 2
- HEAHMJLHQCESBZ-UHFFFAOYSA-N 2,5-diaminobenzenesulfonic acid Chemical compound NC1=CC=C(N)C(S(O)(=O)=O)=C1 HEAHMJLHQCESBZ-UHFFFAOYSA-N 0.000 claims description 2
- IKQCSJBQLWJEPU-UHFFFAOYSA-N 2,5-dihydroxybenzenesulfonic acid Chemical compound OC1=CC=C(O)C(S(O)(=O)=O)=C1 IKQCSJBQLWJEPU-UHFFFAOYSA-N 0.000 claims description 2
- YKPVMVVSUJOBHF-UHFFFAOYSA-N 2,5-dimethoxybenzenesulfonic acid Chemical compound COC1=CC=C(OC)C(S(O)(=O)=O)=C1 YKPVMVVSUJOBHF-UHFFFAOYSA-N 0.000 claims description 2
- DHEZBDZMYYAOKR-UHFFFAOYSA-N 2,5-dinitrobenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC([N+]([O-])=O)=CC=C1[N+]([O-])=O DHEZBDZMYYAOKR-UHFFFAOYSA-N 0.000 claims description 2
- ZZJVDYQPZOHNIK-UHFFFAOYSA-N 2,6-dihydroxybenzenesulfonic acid Chemical compound OC1=CC=CC(O)=C1S(O)(=O)=O ZZJVDYQPZOHNIK-UHFFFAOYSA-N 0.000 claims description 2
- YVBBSZGKRJZXOY-UHFFFAOYSA-N 2,6-dimethoxybenzenesulfonic acid Chemical compound COC1=CC=CC(OC)=C1S(O)(=O)=O YVBBSZGKRJZXOY-UHFFFAOYSA-N 0.000 claims description 2
- JIBYVYTYCPNJJO-UHFFFAOYSA-N 2,6-dinitrobenzenesulfonic acid Chemical compound OS(=O)(=O)C1=C([N+]([O-])=O)C=CC=C1[N+]([O-])=O JIBYVYTYCPNJJO-UHFFFAOYSA-N 0.000 claims description 2
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 2
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 claims description 2
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 claims description 2
- UAZLASMTBCLJKO-UHFFFAOYSA-N 2-decylbenzenesulfonic acid Chemical compound CCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O UAZLASMTBCLJKO-UHFFFAOYSA-N 0.000 claims description 2
- XATFRRKBXKIIRM-UHFFFAOYSA-N 2-heptylbenzenesulfonic acid Chemical compound CCCCCCCC1=CC=CC=C1S(O)(=O)=O XATFRRKBXKIIRM-UHFFFAOYSA-N 0.000 claims description 2
- SYSFRXFRWRDPIJ-UHFFFAOYSA-N 2-hexylbenzenesulfonic acid Chemical compound CCCCCCC1=CC=CC=C1S(O)(=O)=O SYSFRXFRWRDPIJ-UHFFFAOYSA-N 0.000 claims description 2
- IULJSGIJJZZUMF-UHFFFAOYSA-N 2-hydroxybenzenesulfonic acid Chemical compound OC1=CC=CC=C1S(O)(=O)=O IULJSGIJJZZUMF-UHFFFAOYSA-N 0.000 claims description 2
- SGBQUMZTGSQNAO-UHFFFAOYSA-N 2-hydroxynaphthalene-1-sulfonic acid Chemical compound C1=CC=CC2=C(S(O)(=O)=O)C(O)=CC=C21 SGBQUMZTGSQNAO-UHFFFAOYSA-N 0.000 claims description 2
- WPFCHJIUEHHION-UHFFFAOYSA-N 2-nitronaphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=C([N+]([O-])=O)C=CC2=C1 WPFCHJIUEHHION-UHFFFAOYSA-N 0.000 claims description 2
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- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 description 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 1
- ABMFBCRYHDZLRD-UHFFFAOYSA-N naphthalene-1,4-dicarboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1 ABMFBCRYHDZLRD-UHFFFAOYSA-N 0.000 description 1
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 1
- WPUMVKJOWWJPRK-UHFFFAOYSA-N naphthalene-2,7-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=CC2=CC(C(=O)O)=CC=C21 WPUMVKJOWWJPRK-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- FTMKAMVLFVRZQX-UHFFFAOYSA-N octadecylphosphonic acid Chemical compound CCCCCCCCCCCCCCCCCCP(O)(O)=O FTMKAMVLFVRZQX-UHFFFAOYSA-N 0.000 description 1
- YTJSFYQNRXLOIC-UHFFFAOYSA-N octadecylsilane Chemical class CCCCCCCCCCCCCCCCCC[SiH3] YTJSFYQNRXLOIC-UHFFFAOYSA-N 0.000 description 1
- 229920002114 octoxynol-9 Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229960002740 oxyphenonium Drugs 0.000 description 1
- HWGNBUXHKFFFIH-UHFFFAOYSA-I pentasodium;[oxido(phosphonatooxy)phosphoryl] phosphate Chemical group [Na+].[Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])(=O)OP([O-])([O-])=O HWGNBUXHKFFFIH-UHFFFAOYSA-I 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- 229960005152 pentetrazol Drugs 0.000 description 1
- ZWBAMYVPMDSJGQ-UHFFFAOYSA-N perfluoroheptanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F ZWBAMYVPMDSJGQ-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 description 1
- 150000003007 phosphonic acid derivatives Chemical class 0.000 description 1
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 235000010482 polyoxyethylene sorbitan monooleate Nutrition 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 229920000053 polysorbate 80 Polymers 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- GNSKLFRGEWLPPA-UHFFFAOYSA-M potassium dihydrogen phosphate Chemical compound [K+].OP(O)([O-])=O GNSKLFRGEWLPPA-UHFFFAOYSA-M 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 229940107700 pyruvic acid Drugs 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000003352 sequestering agent Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 description 1
- 235000010267 sodium hydrogen sulphite Nutrition 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 235000011008 sodium phosphates Nutrition 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 description 1
- UELAIMNOXLAYRW-UHFFFAOYSA-M sodium;1,4-dicyclohexyloxy-1,4-dioxobutane-2-sulfonate Chemical compound [Na+].C1CCCCC1OC(=O)C(S(=O)(=O)[O-])CC(=O)OC1CCCCC1 UELAIMNOXLAYRW-UHFFFAOYSA-M 0.000 description 1
- PDEFQWNXOUGDJR-UHFFFAOYSA-M sodium;2,2-dichloropropanoate Chemical compound [Na+].CC(Cl)(Cl)C([O-])=O PDEFQWNXOUGDJR-UHFFFAOYSA-M 0.000 description 1
- RWVGQQGBQSJDQV-UHFFFAOYSA-M sodium;3-[[4-[(e)-[4-(4-ethoxyanilino)phenyl]-[4-[ethyl-[(3-sulfonatophenyl)methyl]azaniumylidene]-2-methylcyclohexa-2,5-dien-1-ylidene]methyl]-n-ethyl-3-methylanilino]methyl]benzenesulfonate Chemical compound [Na+].C1=CC(OCC)=CC=C1NC1=CC=C(C(=C2C(=CC(C=C2)=[N+](CC)CC=2C=C(C=CC=2)S([O-])(=O)=O)C)C=2C(=CC(=CC=2)N(CC)CC=2C=C(C=CC=2)S([O-])(=O)=O)C)C=C1 RWVGQQGBQSJDQV-UHFFFAOYSA-M 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000008247 solid mixture Substances 0.000 description 1
- 239000002910 solid waste Substances 0.000 description 1
- 238000005063 solubilization Methods 0.000 description 1
- 230000007928 solubilization Effects 0.000 description 1
- 230000003381 solubilizing effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000001593 sorbitan monooleate Substances 0.000 description 1
- 235000011069 sorbitan monooleate Nutrition 0.000 description 1
- 229940035049 sorbitan monooleate Drugs 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- FBWNMEQMRUMQSO-UHFFFAOYSA-N tergitol NP-9 Polymers CCCCCCCCCC1=CC=C(OCCOCCOCCOCCOCCOCCOCCOCCOCCO)C=C1 FBWNMEQMRUMQSO-UHFFFAOYSA-N 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- HQHCYKULIHKCEB-UHFFFAOYSA-N tetradecanedioic acid Chemical compound OC(=O)CCCCCCCCCCCCC(O)=O HQHCYKULIHKCEB-UHFFFAOYSA-N 0.000 description 1
- BVQJQTMSTANITJ-UHFFFAOYSA-N tetradecylphosphonic acid Chemical compound CCCCCCCCCCCCCCP(O)(O)=O BVQJQTMSTANITJ-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- LDGFRUUNCRYSQK-UHFFFAOYSA-N triazin-4-ylmethanediamine Chemical compound NC(N)C1=CC=NN=N1 LDGFRUUNCRYSQK-UHFFFAOYSA-N 0.000 description 1
- 150000003627 tricarboxylic acid derivatives Chemical class 0.000 description 1
- 150000003628 tricarboxylic acids Chemical class 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 150000004072 triols Chemical class 0.000 description 1
- ZQTYRTSKQFQYPQ-UHFFFAOYSA-N trisiloxane Chemical compound [SiH3]O[SiH2]O[SiH3] ZQTYRTSKQFQYPQ-UHFFFAOYSA-N 0.000 description 1
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 231100000925 very toxic Toxicity 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B7/00—Working up raw materials other than ores, e.g. scrap, to produce non-ferrous metals and compounds thereof; Methods of a general interest or applied to the winning of more than two metals
- C22B7/006—Wet processes
- C22B7/007—Wet processes by acid leaching
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B1/00—Preliminary treatment of ores or scrap
- C22B1/005—Preliminary treatment of scrap
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B11/00—Obtaining noble metals
- C22B11/04—Obtaining noble metals by wet processes
- C22B11/042—Recovery of noble metals from waste materials
- C22B11/046—Recovery of noble metals from waste materials from manufactured products, e.g. from printed circuit boards, from photographic films, paper or baths
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B7/00—Working up raw materials other than ores, e.g. scrap, to produce non-ferrous metals and compounds thereof; Methods of a general interest or applied to the winning of more than two metals
- C22B7/006—Wet processes
- C22B7/008—Wet processes by an alkaline or ammoniacal leaching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
- C25C1/20—Electrolytic production, recovery or refining of metals by electrolysis of solutions of noble metals
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/17—Post-manufacturing processes
- H05K2203/176—Removing, replacing or disconnecting component; Easily removable component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/17—Post-manufacturing processes
- H05K2203/178—Demolishing, e.g. recycling, reverse engineering, destroying for security purposes; Using biodegradable materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/582—Recycling of unreacted starting or intermediate materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/50—Reuse, recycling or recovery technologies
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49815—Disassembling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Geology (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Geochemistry & Mineralogy (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Processing Of Solid Wastes (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Laminated Bodies (AREA)
- Electrolytic Production Of Metals (AREA)
- ing And Chemical Polishing (AREA)
Description
[0001] 本出願は、Svitlana Grigorenko及びAndre Brosseauの、「Method of Selective Recovery of Precious Metals by the Use of Ultrasonic Irradiation」と題した2010年4月15日出願の米国仮特許出願第61/324,390号、Svitlana Grigorenko及びAndre Brosseauの、「Methods of Removal of Components on Populated Circuit Boards by Means of Selective Recovery of Tin, Lead and/or Lead-Tin Solder Intensified by the Application of Ultrasound」と題した2010年8月24日出願の米国仮特許出願第61/376,549号、Andre Brosseau及びSvitlana Grigorenkoの、「Methods for Recycling of Obsolete Printed Circuit Boards」と題した2010年11月10日出願の米国仮特許出願第61/412,390号、Michael B. Korzenski及びPing Jiangの、「Processes for Reclaiming Precious Metals and Copper from Printed Wire Boards」と題した2010年7月7日出願の米国仮特許出願第61/362,118号、Michael B. Korzenski及びPing Jiangの、「Processes for Reclaiming Precious Metals and Copper from Printed Wire Boards」と題した2010年7月28日出願の米国仮特許出願第61/368,360号、Michael B. Korzenski及びPing Jiangの、「Processes for Reclaiming Prccious Mctals and Copper from Printed Wire Boards」と題した2010年9月23日出願の米国仮特許出願第61/385,586号、Ping Jiang及びMichael B, Korzenskiの、「Formulation and Method for Leaching Gold from Material」と題した2010年10月1日出願の米国仮特許出願第61/388,643号、及びAndre Brosseau、Svitlana Grigorenko、Ping Jiang及びMichael B. Korzenskiの、「Method for Recycling of Printed Circuit Boards」と題した2010年11月11日出願の米国仮特許出願第61/412,628号に対する優先権を主張し、上記各出願は参照により全体を本明細書に組み込むものとする。
(a)PWBから少なくとも1つの構成部品を分離することと、
(b)PWBから少なくとも1つの金属、少なくとも1つの構成部品、又はその両方を除去することと、を含む。
(a)PWBから構成部品をはずす。
(b)PWB及び/又はPWBの構成部品から貴金属を回収する。
(c)PWBから卑金属を回収する。
[0047] 構成部品は通常、鉛、スズ又は鉛とスズのはんだでPWBの表面に取り付けられ、これは通常、70Sn/30Pb、60Sn/40Pb又は63Sn/37Pbの組合せになる。特定の用途では、Ag−Snはんだが使用される。現在、構成部品除去のためのPWBのはんだ除去は、はんだを融点まで加熱することを含み、これにより遊離した構成部品がPWBから分離し、液体はんだが収集される。PWBのリサイクルに適用されるこの方法には、主に2つの欠点がある。すなわち、(i)鉛及びスズは低揮発金属であるので、このような加熱及び溶解は大気に対して高レベルの汚染排出物質を生成し、(ii)熱は構成部品を損傷し、再使用に不適格なものにする。
[0057] 第2の態様では、貴金属、タンタル含有金属、及び/又は卑金属に対してはんだ(例えば鉛及び/又はスズ含有材料)を選択的に除去する第1の組成物について説明する。はんだを除去する第1の組成物は、以下の性質を有する。
1.鉛及びスズのみを溶解するために可能な限り選択的である。PWBは、銅、亜鉛、アルミニウム及び鉄など、大量の様々な金属を含有している。望ましくない金属は第1の組成物を飽和することになり、それによってターゲット金属の溶解に対する効果が低下する。
2.第1の組成物は、はんだの溶解に効果的であり、したがって装着された構成部品をPWBの表面から迅速に引き離すことができる。
3.装着された構成部品は販売可能な状態で回収される。すなわち、第1の組成物によって損傷又は腐食しないことが好ましい。例えば、チップをPWBの表面に接続するはんだによって覆われた微小なリード線は影響されないことが好ましい。
4.第1の組成物は、第1の態様のプロセス中に金メッキを除去する。PWBは、ニッケル及び銅上に薄いメッキの形態で存在し、いわゆる「ゴールドフィンガー」を形成する金属金を含有する。したがって、理想的な第1の組成物は金メッキを無影響のままにする。
[0076] 第3の態様では、貴金属、例えば金を表面から除去する方法について説明する。当技術分野では、PWBは「ゴールドフィンガー」を含み、これは、はんだ及び構成部品(例えばトランジスタ、コンデンサ、ヒートシンク、IC、抵抗器、集積スイッチ、プロセッサなど)をPWBから除去した後、即座に露出することが周知である。(金のコネクタ又は「ゴールドフィンガー」としての)金は、銅及び/又はニッケル含有層などの卑金属に重なっている。
[0083] 第4の態様では、貴金属(例えば金)に対して銅及び/又はニッケル含有材料などの卑金属を選択的に除去する第2の組成物について説明し、上記組成物は少なくとも1つの酸化剤を含む、それらで構成される、又は基本的にそれらで構成される。第2の組成物はさらに、少なくとも1つの卑金属錯化剤、少なくとも1つの有機溶媒及び/又は貴金属を不動態化する少なくとも1つの不動態化剤を含むことができる。したがって一実施形態では、第2の組成物は少なくとも1つの卑金属錯化剤及び少なくとも1つの酸化剤を含む、それらで構成される、又は基本的にそれらで構成される。別の実施形態では、第2の組成物は少なくとも1つの酸化剤及び貴金属を不動態化する少なくとも1つの不動態化剤を含む、それらで構成される、又は基本的にそれらで構成される。さらに別の実施形態では、第2の組成物は少なくとも1つの酸化剤及び少なくとも1つの有機溶媒を含む、それらで構成される、又は基本的にそれらで構成される。さらに別の実施形態では、第2の組成物は少なくとも1つの卑金属錯化剤、少なくとも1つの酸化剤、及び貴金属を不動態化する少なくとも1つの不動態化剤を含む、それらで構成される、又は基本的にそれらで構成される。別の実施形態では、第2の組成物は少なくとも1つの卑金属錯化剤、少なくとも1つの酸化剤、及び少なくとも1つの有機溶媒を含む、それらで構成される、又は基本的にそれらで構成される。第2の組成物の別の実施形態は少なくとも1つの卑金属錯化剤、少なくとも1つの酸化剤、及び少なくとも1つの有機溶媒を含む、それらで構成される、又は基本的にそれらで構成され、組成物には実質的に過酸化水素がない。さらに別の実施形態では、第2の組成物は少なくとも1つの有機溶媒、少なくとも1つの酸化剤、及び貴金属を不動態化する少なくとも1つの不動態化剤を含む、それらで構成される、又は基本的にそれらで構成される。さらに別の実施形態では、第2の組成物は少なくとも1つの卑金属錯化剤、少なくとも1つの酸化剤、少なくとも1つの有機溶媒、及び貴金属を不動態化する少なくとも1つの不動態化剤を含む、それらで構成される、又は基本的にそれらで構成される。卑金属に選択的なイオン交換樹脂を第2の組成物と化合させて使用し、浴の寿命を延長することができる。第2の組成物は水性組成物であることを認識されたい。
[0097] 第5の態様では、貴金属、例えば金を貴金属含有材料から回収する組成物及び方法について説明し、この方法は、三ヨウ化物を含む浸出組成物に貴金属含有材料を投入することを含む。上記貴金属含有材料は、金のスクラップ、鉱石及び他の採掘尾鉱及び電子廃棄物(e廃棄物)、例えばPWB及び/又はPWBの構成部品を含むが、これらに限定されない。一実施形態では、第5の態様の上記方法は、容器内で三ヨウ化物を含む浸出組成物に貴金属含有材料を投入すること、及び任意選択で上記容器内で超音波キャビテーションを生成することを含み、上記浸出組成物は三ヨウ化物を含み、貴金属は上記貴金属含有材料から実質的に除去される。貴金属は金を含むことが好ましい。例えば、はんだを除去し、(例えば第1の態様の方法又はその同等物に従って)PWBの表面から構成部品をはずした後、光学システム又は何らかの他の手段を使用して構成部品を部分に分離することができ、それにより再使用可能な構成部品を、貴金属を含有する構成部品の部分、卑金属を含有する構成部品の部分、及び任意選択でタンタルを含有する構成部品の部分から分離することができる。一実施形態では、貴金属を含有する構成部品の部分をさらに処理し、PWBの構成部品の部分から貴金属を浸出させる。
[00112] 第5の態様のさらに別の実施形態では、金又は他の貴金属をe廃棄物から除去する組成物及び方法について説明し、この方法は、金又は他の貴金属を上記e廃棄物から浸出させるために、e廃棄物を浸出組成物と接触させることを含み、浸出組成物の超音波照射を施す。所望の効果を以下の方法で達成することができる。すなわち、a)貴金属に対する選択的浸出液として働くことができる三ヨウ化物浸出組成物を使用すること、b)卑金属の溶解を最小化するために、浸出組成物のpHをわずかに酸性に(好ましくは少なくともほぼpH=5に、及びさらに好ましくは酸性・中性付近に)、酸化還元電位電位(ORP)を100mVと900mVの間に維持すること、c)卑金属の溶解を防止するために、第2の燐酸アンモニウム又は第2の燐酸カリウム/燐酸などの特殊な化学物質を添加すること、及びd)卑金属は捕捉するが、三ヨウ化物及び貴金属は通過させる市販の強酸陽イオン交換樹脂に組成物を通すことである。
[00120] 別の実施形態では、e廃棄物、例えばPWB及び/又はPWBの構成部品から金又は他の貴金属を除去する方法について説明し、この方法は、現場で生成したヨウ素を含む浸出組成物を形成するために、ヨウ素(I2)を現場で生成すること、及びPWB及び/又はPWBの構成部品から金又は他の貴金属を浸出させるために、PWB及び/又はPWBの構成部品を浸出組成物と接触させることを含む。PWB及び/又はPWBの構成部品は、浸出組成物に接触する前に破砕することが好ましい。好ましい実施形態では、上記方法は、金又は他の貴金属を含む浸出組成物をe廃棄物から分離することをさらに含む。浸出組成物中で金又は他の貴金属を(例えばこのような目的に適した還元剤で)還元することにより、固体金属を入手することができる。上記方法は室温で実行することができるので有利である。金は、e廃棄物から分離された貴金属であることが好ましい。
[00147] (例えば第1の態様の方法で説明されているように)PWBの構成部品及び(例えば第3又は第5の態様の方法で説明されているように)貴金属を除去した後、通常、元のPWBは剥がされて、エポキシなどの接着剤によって相互に保持されたガラス繊維層及び銅板を含む「裸基板」になっている。裸基板をさらに処理して、銅からガラス繊維−エポキシ層を遊離させることができる。
[00150] 第7の態様の一実施形態は、図1で一般化されているように、例えばPWBなどの表面から少なくとも1つの構成部品を除去するプロセスに対応し、この方法は、
(a)第1の態様の方法、及び
(b)第3の態様の方法を含む、
又は
(a)表面からはんだを除去することを含み、はんだの除去は表面から少なくとも1つの構成部品をはずし、さらに、
(b)表面から卑金属を除去し、それにより表面から貴金属をアンダーカットすることを含む、
又は
(a)表面からはんだを除去することを含み、はんだの除去は表面から少なくとも1つの構成部品を除去し、さらに、
(b)上記表面上に存在する貴金属に対して卑金属を選択的に除去し、それにより表面から貴金属をアンダーカットするために、容器内で上記表面を第2の組成物と接触させる、及び任意選択で上記容器内で超音波キャビテーション又は他の攪拌手段を生成することを含む、
又は
(a)上記表面上に同時に存在する貴金属、タンタル含有金属、及び/又は卑金属に対してはんだを選択的に除去するために、容器中ではんだを第1の組成物と接触させる、及び任意選択で上記容器内で超音波キャビテーション又は攪拌手段を生成することを含み、それによりはんだの除去が表面から少なくとも1つの構成部品をはずし、さらに、
(b)表面から卑金属を除去し、それにより表面から貴金属をアンダーカットすることを含む、
又は
(a)上記表面上に同時に存在する貴金属、タンタル含有金属、及び/又は卑金属に対してはんだを選択的に除去するために、容器内ではんだを第1の組成物と接触させる、及び任意選択で上記容器内で超音波キャビテーション又は攪拌手段を生成することを含み、はんだの除去が表面から少なくとも1つの構成部品をはずし、さらに、
(b)上記表面上に存在する貴金属に対して卑金属を選択的に除去し、それにより表面から貴金属をアンダーカットするために、容器内で上記表面を第2の組成物に接触させる、及び任意選択で上記容器内で超音波キャビテーション又は攪拌手段を生成することを含む。
(a)第1の態様の方法、
(b)第3の態様の方法、及び
(c)第6の態様の方法を含む、
又は
(a)表面からはんだを除去することを含み、はんだの除去は表面から少なくとも1つの構成部品をはずし、さらに、
(b)ガラス繊維及び銅を含む裸基板を産出するために、表面から卑金属を除去し、それにより表面から貴金属をアンダーカットすること、及び
(c)裸基板のガラス繊維及び銅を分離することを含む、
又は
(a)表面からはんだを除去することを含み、はんだの除去は表面から少なくとも1つの構成部品をはずし、さらに、
(b)上記表面上に存在する貴金属に対して卑金属を選択的に除去し、それにより表面から貴金属をアンダーカットして、ガラス繊維及び銅を含む裸基板を産出するために、容器内で上記表面を第2の組成物と接触させる、及び任意選択で上記容器内で超音波キャビテーション又は攪拌手段を生成すること、及び
(c)裸基板のガラス繊維及び銅を分離することを含む、
又は
(a)上記表面上に同時に存在する貴金属、タンタル含有金属、及び/又は卑金属に対してはんだを選択的に除去するために、容器内ではんだを第1の組成物に接触させる、及び任意選択で上記容器内で超音波キャビテーション又は攪拌手段を生成することを含み、はんだが除去されると、少なくとも1つの構成部品が表面からはずされ、はんだの除去が表面から少なくとも1つの構成部品をはずし、さらに、
(b)ガラス繊維層及び銅を含む裸基板を産出するために、表面から卑金属を除去し、それにより表面から貴金属をアンダーカットすること、及び
(c)裸基板のガラス繊維層及び銅を分離することを含む、
又は
(a)上記表面上に同時に存在する貴金属、タンタル含有金属、及び/又は卑金属に対してはんだを選択的に除去するために、容器内ではんだを第1の組成物に接触させる、及び任意選択で上記容器内で超音波キャビテーション又は攪拌手段を生成することを含み、はんだが除去されると、少なくとも1つの構成部品が表面からはずされ、はんだの除去は表面から少なくとも1つの構成部品をはずし、さらに、
(b)上記表面上に存在する貴金属に対して卑金属を選択的に除去し、それにより表面から貴金属をアンダーカットして、ガラス繊維層及び銅を含む裸金属を産出するために、容器内で上記表面を第2の組成物と接触させる、及び任意選択で上記容器内で超音波キャビテーション又は攪拌手段を生成すること、及び
(c)裸基板のガラス繊維層及び銅を分離することを含む。
(a)第3の態様の方法、及び
(b)第6の態様の方法を含む、
又は
(a)ガラス繊維層及び銅を含む裸基板を産出するために、表面から卑金属を除去し、それにより表面から貴金属をアンダーカットすること、
(b)裸基板のガラス繊維材料及び銅を分離することを含む、
又は
(a)上記表面上に存在する貴金属に対して卑金属を選択的に除去し、それによりガラス繊維及び銅を含む裸基板を産出するために、容器内で上記表面を第2の組成物と接触させる、及び任意選択で上記容器内で超音波キャビテーション又は攪拌手段を生成すること、
(b)裸基板のガラス繊維材料及び銅を分離することを含む。
(a)第1の態様の方法、及び
(b)第5の態様の方法を含む、
又は
(a)表面からはんだを除去することを含み、はんだの除去は表面から少なくとも1つの構成部品をはずし、さらに、
(b)上記表面及び/又は上記少なくとも1つの構成部品から貴金属を浸出させることを含む、
又は
(a)表面からはんだを除去することを含み、はんだの除去は表面から少なくとも1つの構成部品をはずし、さらに、
(b)容器内で表面及び/又は少なくとも1つの構成部品を浸出組成物に投入する、及び任意選択で上記容器内で超音波キャビテーション又は他の攪拌手段を生成することを含み、上記浸出組成物は、上記表面及び/又は上記少なくとも1つの構成部品から貴金属を実質的に除去するために三ヨウ化物を含む、
又は
(a)上記表面上に同時に存在する貴金属、タンタル含有金属、及び/又は卑金属に対してはんだを選択的に除去するために、容器内ではんだを第1の組成物と接触させる、及び任意選択で上記容器内で超音波キャビテーション又は他の攪拌手段を生成することを含み、はんだの除去は表面から少なくとも1つの構成部品をはずし、さらに、
(b)上記表面及び/又は上記少なくとも1つの構成部品から貴金属を浸出させることを含む、
又は
(a)上記表面上に同時に存在する貴金属、タンタル含有金属、及び/又は卑金属に対してはんだを選択的に除去するために、容器内ではんだを第1の組成物と接触させる、及び任意選択で上記容器内で超音波キャビテーション又は他の攪拌手段を生成することを含み、はんだの除去は表面から少なくとも1つの構成部品をはずし、さらに、
(b)容器内で表面及び/又は上記少なくとも1つの構成部品を浸出組成物に投入する、及び任意選択で上記容器内で超音波キャビテーション又は他の攪拌手段を生成することを含み、上記浸出組成物は三ヨウ化物を含み、上記表面及び/又は上記少なくとも1つの構成部品から貴金属を除去する。
(a)第1の態様の方法、
(b)第5の態様の方法、及び
(c)第6の態様の方法を含む、
又は
(a)表面からはんだを除去することを含み、はんだの除去は表面から少なくとも1つの構成部品をはずし、さらに、
(b)ガラス繊維層及び銅を含む裸基板を産出するために、上記表面から貴金属を浸出させること、及び
(c)裸基板のガラス繊維層及び銅を分離することを含む、
又は
(a)表面からはんだを除去することを含み、はんだの除去は表面から少なくとも1つの構成部品をはずし、さらに、
(b)容器内で表面を浸出組成物に投入する、及び任意選択で上記容器内で超音波キャビテーション又は他の攪拌手段を生成することを含み、上記浸出組成物は、上記表面から貴金属を実質的に除去し、ガラス繊維層及び銅を含む裸基板を産出するために三ヨウ化物を含み、さらに、
(c)裸基板のガラス繊維層及び銅を分離することを含む、
又は
(a)上記表面上に同時に存在する貴金属、タンタル含有金属、及び/又は卑金属に対してはんだを選択的に除去するために、容器内ではんだを第1の組成物と接触させる、及び任意選択で上記容器内で超音波キャビテーション又は他の攪拌手段を生成することを含み、はんだの除去は表面から少なくとも1つの構成部品をはずし、さらに、
(b)ガラス繊維層及び銅を含む裸金属を産出するために、上記表面から貴金属を浸出させること、及び
(c)裸基板のガラス繊維層及び銅を分離することを含む、
又は
(a)上記表面上に同時に存在する貴金属、タンタル含有金属、及び/又は卑金属に対してはんだを選択的に除去するために、容器内ではんだを第1の組成物と接触させる、及び任意選択で上記容器内で超音波キャビテーション又は攪拌手段を生成することを含み、はんだの除去は表面から少なくとも1つの構成部品をはずし、さらに、
(b)容器内で表面を浸出組成物に投入する、及び任意選択で上記容器内で超音波キャビテーション又は他の攪拌手段を生成することを含み、上記浸出組成物は三ヨウ化物を含み、上記表面から貴金属を実質的に除去して、ガラス繊維層及び銅を含む裸金属を産出し、さらに
(c)裸基板のガラス繊維層及び銅を分離することを含む。
[00161] 3つの組成物を比較した。すなわち、1:1v/vのHEDP/30wt%のH2O2の溶液(配合A)、1:1v/vのEDDS/30wt%のH2O2の溶液(配合B)、及び1:1v/vのHEIDA/30wt%のH2O2の溶液(配合C)である。約0.3gの銅線、ニッケル箔、顆粒状スズ、鉛箔、アルミニウム線、鉄粉及び顆粒状亜鉛を個別に、及び静的に清浄な配合A〜Cに40℃で30分間浸漬した。残りの固体を除去した後、溶液を誘導結合プラズマ(ICP)分析にかけて、各溶液中の各金属の濃度を(ppmで)割り出した。結果が表1〜3に要約されている。
[00163] 組成物を下記の表4に示すように調製した。銅線、鉛箔、顆粒状スズ、ニッケル箔、アルミニウム線、鉄粉及び顆粒状亜鉛を個別に、及び静的に各配合に40℃で30分間浸漬した。残りの固体を除去した後、溶液を誘導結合プラズマ(ICP)分析にかけて、各溶液中の各金属の濃度を(ppmで)割り出した。結果が表4に要約されている。
[00166] 250mLの70%メタンスルホン酸及び250mLの脱イオン(DI)水を含む水性第1の組成物を調製した。廃棄ビデオカードNVIDIAモデルP118をサイレント浸出モードで第1の組成物に浸漬した。装着された構成部品は4日で分離し、金メッキは影響を受けず、分離した構成部品上の幾つかのピンは腐食し、スラッジ及び気体形成は検出されなかった。同じ溶液に3分間超音波を照射したが、構成部品の分離に顕著な結果はなかった。
[00170] 組成物A及びBを配合した。
組成物A:10gのKI、2.5gの過硫酸ナトリウム、25mLの水
組成物B:10gのKI、2.5gの過硫酸アンモニウム、25mLの水
[00172] 組成物C〜Gを配合した。
組成物C:40.08gのKI、10.03gのI2、100gの水
組成物D:40gのKI、10.02gのHNO3(70%)、100gの水
組成物E:40.08gのKI、9.98gのHIO4、0.04gのHCl(37%)、90.08gの水
組成物F:39.99gのKI、10.00gのオキソン、100.04gの水
組成物G:40.10gのIK、9.99gのNaOCl、10.06gのHCl(37%)、89.96gの水
[00174] 浸出速度、浴処理量及び浴寿命を、(a)KI、過硫酸ナトリウム、及び水、(b)KI、過硫酸アンモニウム、及び水、及び(c)KI、オキソン、及び水を含有する溶液について比較し、各溶液のヨウ化物塩、酸化剤及び水の量は同じであった。0.05%〜0.5%の金でコーティングしたプリント配線板(2cm×2cm未満)を、室温で各組成物に浸漬し、ICP−OESを使用して30分で金の溶解程度をモニタした。幾つかの金属について、浸出結果が表6に示してある。
[00176] プリント配線板の部片を室温及び40℃で組成物Fに浸漬し、ICP−OESを使用して間隔をあけて金属の溶解程度をモニタした。各サンプルは、分析前に水で50倍に希釈した。結果が表7に示してある。
[00177] 目に見える金メッキがあり、総重量380gの裸プリント回路基板の部片を2リットルのガラスのビーカーに入れ、1リットルのヨウ化カリウム水溶液(100mLの脱イオン水当たり72.5gの固体ヨウ化カリウム)を添加した。実験は21℃の周囲温度に保持された。超音波装置UIP 1000hd(20kHz、1000W、Heilscher Ultrasonics GmbH製)のソノトロードをビーカーに入れ、溶液に浸漬されてPWBに接触しないような方法で位置決めした。20kHzの超音波周波数及び25ミクロンの振幅で超音波装置を2分間操作し、その後にビーカーから超音波ホーンを取り出した。溶液体積に超音波照射を加えると強力なキャビテーションが発生し、これは液体の体積中に形成された強力なキャビテーション泡として目に見えた。溶液は透明から茶色に変色し、これは三ヨウ化物イオンの形成を示した。1mLの70%硝酸を溶液に添加した。処理した基盤の表面を目視検査することにより、目に見える金メッキの残りは検出されず、同時に卑金属は影響を受けていなかった。基板の部片をビーカーから取り出し、溶液を1810 Whatman Acid-Treated Low Metal TCLPフィルタに通して濾過し、固体不純物を全て除去した。次に貴液を重亜硫酸ナトリウムの飽和水溶液と混合し、機械的混合機で30分間攪拌した。溶液は透明な黄色に変色し、金属金のブラウンの微粉末が析出した。粉末を濾過して除去し、脱イオン水ですすいで乾燥した。回収した析出物の別個の分析は、99.2±0.2%の金を示した。析出物を磁製るつぼに入れて1200℃で加熱し、それにより金属金のボタンを形成した。
[00180] 廃棄電子機器の機械的リサイクルの結果として生じた200gの「レッドメタル」濃縮物を、実施例8で説明したものと同じであるが、燐酸二水素カリウム/水酸化ナトリウムで衝剤してpH=5.6にした浸出組成物で処理した。濃縮物は、混合した電子廃棄物に粉砕及び研削作業を加え、その後に磁気及び渦電流で分離し、振盪機テーブル上で濃縮した出力材料を表す。粒子サイズ0.4〜1mmの最初の金属混合物の組成が表8に示してある。
Claims (24)
- プリント配線板(PWB)の処理方法であって、
(a)少なくとも1つのPWB構成部品を前記PWBから分離することと、
(b)前記PWB、前記少なくとも1つのPWB構成部品、又は両方から、少なくとも1つの貴金属を除去することと、を含み、
前記除去は、前記PWB、前記少なくとも1つのPWB構成部品、又は両方に浸出組成物を接触させることによって実行され、前記少なくとも1つの貴金属は浸出組成物中に溶解し、前記浸出組成物は少なくとも1つの酸化剤、少なくとも1つのヨウ化物塩又はヨウ化水素酸、水、及び少なくとも1つの金属不動態化剤を含み、
前記少なくとも1つの金属不動態化剤は、1,2,4−トリアゾール(TAZ)、ベンゾトリアゾール(BTA)、トリルトリアゾール、5−フェニル−ベンゾトリアゾール、5−ニトロ−ベンゾトリアゾール、3−アミノ−5−メルカプト−1,2,4−トリアゾール、1−アミノ−1,2,4−トリアゾール、ヒドロキシベンゾトリアゾール、2−(5−アミノ−ペンチル)−ベンゾトリアゾール、1−アミノ−1,2,3−トリアゾール、1−アミノ−5−メチル−1,2,3−トリアゾール、3−アミノ−1,2,4−トリアゾール、3−メルカプト−1,2,4−トリアゾール、3−イソプロピル−1,2,4−トリアゾール、5−フェニルチオール−ベンゾトリアゾール、ハロゲン−ベンゾトリアゾール、ナフトトリアゾール、アスコルビン酸、モリブデン酸ナトリウム、及びこれらの組合せからなる群から選択される種を含む、
方法。 - 処理前に、前記少なくとも1つのPWB構成部品は、前記PWBの表面に取り付けられるものであって、トランジスタ、コンデンサ、ヒートシンク、集積回路、抵抗器、集積スイッチ、チップ、プロセッサ、及びこれらの組合せからなる群から選択されるものである、
請求項1に記載の方法。 - 前記少なくとも1つのPWB構成部品は前記PWBの表面にはんだで取り付けられており、前記分離することは、前記はんだを溶解すること、前記はんだを融解すること、又は前記少なくとも1つのPWB構成部品を前記PWBから切断、剪断又は引っ張ることを含む、
請求項1に記載の方法。 - 前記はんだは、鉛、スズ、又は鉛/スズ合金を含む、
請求項3に記載の方法。 - 前記はんだは第1の組成物を使用して溶解され、前記第1の組成物は、貴金属、卑金属及び/又はタンタル含有金属に対してはんだを選択的に除去する、
請求項3に記載の方法。 - 前記第1の組成物は、少なくとも1つの酸化剤、少なくとも1つの不動態化剤を含み、前記第1の組成物は、フッ化塩、硝酸酸化鉄及び他の第二鉄塩、チタニウム(IV)塩、研磨剤、及びフルオロホウ酸のうち少なくとも1つがない、
請求項5に記載の方法。 - 前記第1の組成物の前記少なくとも1つの酸化剤は、硝酸、メタンスルホン酸、エタンスルホン酸、2−ヒドロキシエタンスルホン酸、n−プロパンスルホン酸、イソプロパンスルホン酸、イソブテンスルホン酸、n−ブタンスルホン酸、n−オクタンスルホン酸、ベンゼンスルホン酸、4−メトキシベンゼンスルホン酸、4−ヒドロキシベンゼンスルホン酸、4−アミノベンゼンスルホン酸、4−ニトロベンゼンスルホン酸、トルエンスルホン酸、ヘキシルベンゼンスルホン酸、ヘプチルベンゼンスルホン酸、オクチルベンゼンスルホン酸、ノニルベンゼンスルホン酸、デシルベンゼンスルホン酸、ウンデシルベンゼンスルホン酸、ドデシルベンゼンスルホン酸、トリデシルベンゼンスルホン酸、テトラデシルベンゼンスルホン酸、ヘキサデシルベンゼンスルホン酸、3−ニトロベンゼンスルホン酸、2−ニトロベンゼンスルホン酸、2−ニトロナフタレンスルホン酸、3−ニトロナフタレンスルホン酸、2,3−ジニトロベンゼンスルホン酸、2,4−ジニトロベンゼンスルホン酸、2,5−ジニトロベンゼンスルホン酸、2,6−ジニトロベンゼンスルホン酸、3,5−ジニトロベンゼンスルホン酸、2,4,6−トリニトロベンゼンスルホン酸、3−アミノベンゼンスルホン酸、2−アミノベンゼンスルホン酸、2−アミノナフタレンスルホン酸、3−アミノナフタレンスルホン酸、2,3−ジアミノベンゼンスルホン酸、2,4−ジアミノベンゼンスルホン酸、2,5−ジアミノベンゼンスルホン酸、2,6−ジアミノベンゼンスルホン酸、3,5−ジアミノベンゼンスルホン酸、2,4,6−トリアミノベンゼンスルホン酸、3−ヒドロキシベンゼンスルホン酸、2−ヒドロキシベンゼンスルホン酸、2−ヒドロキシナフタレンスルホン酸、3−ヒドロキシナフタレンスルホン酸、2,3−ジヒドロキシベンゼンスルホン酸、2,4−ジヒドロキシベンゼンスルホン酸、2,5−ジヒドロキシベンゼンスルホン酸、2,6−ジヒドロキシベンゼンスルホン酸、3,5−ジヒドロキシベンゼンスルホン酸、2,3,4−トリヒドロキシベンゼンスルホン酸、2,3,5−トリヒドロキシベンゼンスルホン酸、2,3,6−トリヒドロキシベンゼンスルホン酸、2,4,5−トリヒドロキシベンゼンスルホン酸、2,4,6−トリヒドロキシベンゼンスルホン酸、3,4,5−トリヒドロキシベンゼンスルホン酸、2,3,4,5−テトラヒドロキシベンゼンスルホン酸、2,3,4,6−テトラヒドロキシベンゼンスルホン酸、2,3,5,6−テトラヒドロキシベンゼンスルホン酸、2,4,5,6−テトラヒドロキシベンゼンスルホン酸、3−メトキシベンゼンスルホン酸、2−メトキシベンゼンスルホン酸、2,3−ジメトキシベンゼンスルホン酸、2,4−ジメトキシベンゼンスルホン酸、2,5−ジメトキシベンゼンスルホン酸、2,6−ジメトキシベンゼンスルホン酸、3,5−ジメトキシベンゼンスルホン酸、2,4,6−トリメトキシベンゼンスルホン酸、アルカンスルホン酸、オゾン、シクロヘキシルアミノスルホン酸、過酸化水素、オキソン、ペルオキソ一硫酸アンモニウム、次亜塩素酸アンモニウム、過塩素酸アンモニウム、ヨウ素酸アンモニウム、過ホウ酸アンモニウム、過塩素酸アンモニウム、過ヨウ素酸アンモニウム、過硫酸アンモニウム、次亜塩素酸アンモニウム、過硫酸ナトリウム、次亜塩素酸ナトリウム、ヨウ素酸カリウム、過マンガン酸カリウム、過硫酸カリウム、次亜塩素酸カリウム、過塩素酸テトラメチルアンモニウム、次亜塩素酸テトラメチルアンモニウム、ヨウ素酸テトラメチルアンモニウム、過ホウ酸テトラメチルアンモニウム、過塩素酸テトラメチルアンモニウム、過ヨウ素酸テトラメチルアンモニウム、過硫酸テトラメチルアンモニウム、ペルオキソ一硫酸テトラブチルアンモニウム、ペルオキソ一硫酸、尿素過酸化水素、過酢酸、硝酸ナトリウム、硝酸カリウム、硝酸アンモニウム、及びこれらの化合物を含む、
請求項6に記載の方法。 - 前記第1の組成物の前記少なくとも1つの酸化剤は、硝酸を含む、
請求項6に記載の方法。 - 前記第1の組成物の前記少なくとも1つの酸化剤は、メタンスルホン酸、エタンスルホン酸、2−ヒドロキシエタンスルホン酸、n−プロパンスルホン酸、イソプロパンスルホン酸、イソブテンスルホン酸、n−ブタンスルホン酸、及びn−オクタンスルホン酸からなる群から選択されるアルカンスルホン酸を含む、
請求項6に記載の方法。 - 前記アルカンスルホン酸は、メタンスルホン酸を含む、
請求項9に記載の方法。 - 前記第1の組成物の前記少なくとも1つの不動態化剤は、トリアゾール誘導体を含む、
請求項6に記載の方法。 - 前記トリアゾール誘導体は、1,2,4−トリアゾール、ベンゾトリアゾール、トリルトリアゾール、5−フェニル−ベンゾトリアゾール、5−ニトロ−ベンゾトリアゾール、3−アミノ−5−メルカプト−1,2,4−トリアゾール、1−アミノ−1,2,4−トリアゾール、ヒドロキシベンゾトリアゾール、2−(5−アミノ−ペンチル)−ベンゾトリアゾール、1−アミノ−1,2,3−トリアゾール、1−アミノ−5−メチル−1,2,3−トリアゾール、3−アミノ−1,2,4−トリアゾール、3−メルカプト−1,2,4−トリアゾール、3−イソプロピル−1,2,4−トリアゾール、5−フェニルチオール−ベンゾトリアゾール、ハロゲン−ベンゾトリアゾール、ナフトトリアゾール、及び4−メチル−4H−1,2,4−トリアゾール−3−チオールからなる群から選択される、
請求項11に記載の方法。 - 分離後に、前記PWBにPWB構成部品がない、
請求項1から12のいずれか一項に記載の方法。 - 前記浸出組成物は、三ヨウ化物イオンを含む、
請求項1に記載の方法。 - 前記少なくとも1つの貴金属は、前記PWB構成部品から除去される、
請求項1に記載の方法。 - 前記浸出組成物に接触させる前に、前記PWB構成部品を破砕するステップをさらに含む、
請求項15に記載の方法。 - 前記少なくとも1つの貴金属は金を含み、前記金は、不均化反応、還元剤を使用して、又は電解採取によって回収される、
請求項14から16のいずれか一項に記載の方法。 - 前記PWBは、ガラス繊維層、銅膜、及び接着剤を含む、
請求項1から17のいずれか一項に記載の方法。 - (b)前記PWB、前記少なくとも1つのPWB構成部品、又は両方からの少なくとも1つの貴金属の前記除去の後に、前記接着剤を劣化させて、前記銅膜を前記ガラス繊維層から遊離させる、
請求項18に記載の方法。 - (a)前記PWBからの少なくとも1つのPWB構成部品の前記分離中、又は(b)前記PWB、前記少なくとも1つのPWB構成部品、又は両方からの少なくとも1つの貴金属の前記除去中に、超音波放射を生成するステップを含む、
請求項1から19のいずれか一項に記載の方法。 - 前記少なくとも1つのPWB構成部品は再使用可能又はリサイクル可能である、
請求項1から20のいずれか一項に記載の方法。 - 前記PWB構成部品は、前記浸出組成物との接触後にすすぎ水によりすすがれ、前記すすぎ水は、非分割セルを使用した大表面積電解採取によって処理される、
請求項14から17のいずれか一項に記載の方法。 - 前記酸化剤は、オキソン、過硫酸ナトリウム、過硫酸アンモニウム、過硫酸カリウム、硝酸、過ヨウ素酸、次亜塩素酸ナトリウム、過酸化水素、塩化第二鉄、硝酸第二鉄、又はこれらの化合物からなる群から選択される種を含み、
前記ヨウ化物塩は、ヨウ化リチウム、ヨウ化ナトリウム、ヨウ化カリウム、ヨウ化アンモニウム、ヨウ化カルシウム、ヨウ化マグネシウム、及びヨウ化テトラアルキルアンモニウムからなる群から選択される種を含み、前記アルキル基は相互に同じ、又は異なってよく、直鎖C1−C6アルキル及び分枝C1−C6アルキルからなる群から選択される、
請求項1に記載の方法。 - 前記浸出組成物には、実質的に王水及びシアン化物含有成分がない、
請求項1に記載の方法。
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US32439010P | 2010-04-15 | 2010-04-15 | |
US61/324,390 | 2010-04-15 | ||
US36211810P | 2010-07-07 | 2010-07-07 | |
US61/362,118 | 2010-07-07 | ||
US36836010P | 2010-07-28 | 2010-07-28 | |
US61/368,360 | 2010-07-28 | ||
US37654910P | 2010-08-24 | 2010-08-24 | |
US61/376,549 | 2010-08-24 | ||
US38558610P | 2010-09-23 | 2010-09-23 | |
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