JP5875864B2 - 統合型流量平衡器と改良されたコンダクタンスとを備える下部ライナ - Google Patents
統合型流量平衡器と改良されたコンダクタンスとを備える下部ライナ Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 16
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 238000004891 communication Methods 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
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Description
本発明の実施形態は、概して、下部チャンバライナを有するプラズマ処理チャンバに関する。
現代の集積回路は、シングルチップに何百万もの構成部品を含み得る複雑なデバイスである。しかしながら、速く、小さな電子デバイスの需要は、一層増加している。この需要は、速い回路だけでなく、各チップにおける大きな回路密度を必要とする。大きな回路密度を達成するために、集積回路部品の最小寸法又は限界寸法も低減する必要がある。
equalizer)が、プラズマ処理チャンバに提供される。一実施形態において、統合型流量平衡器は、プラズマへの暴露から下部チャンバの壁を保護し、及び改良されたガス流コンダクタンスを許容するように構成される。一実施形態において、下部チャンバライナは、チャンバ底壁から高くされ、下部チャンバライナと底壁の間に高コンダクタンスのプレナムを形成する。一実施形態において、下部チャンバライナは、それを通って形成された開口を有し、プレナムと流体連通状態にある真空ポンプによって吸引された処理ガスの流れを均一にし、プラズマ処理チャンバに位置する基板での均一なプラズマ流及び均一なエッチングを生じるように構成される。
Claims (15)
- プラズマ処理のための装置であって、
チャンバ本体と、
該チャンバ本体内に配置された第1のチャンバライナと、
該第1のチャンバライナの下方で該チャンバ本体内に配置され、該第1のチャンバライナに電気的に結合された、第2のチャンバライナであって、
底壁と、
該底壁から上方へ延びる内壁と、
該底壁から上方へ傾斜する外壁とを備える第2のチャンバライナとを備え、
該第2のチャンバライナが、該底壁及び該外壁に亘って貫通して延びる、処理ガスの均一な真空吸引を更に促進するためのサイズ及び位置決めを調整した複数の開口を有し、該第2のチャンバライナが、該チャンバ本体の底面に対して高い位置にあり、これによって、環状プレナムが該第2のチャンバライナと該チャンバ本体の底面との間に画定され、
該環状プレナムが、該第1のチャンバライナの背後に設けられた排出口と流体連通状態にあるプラズマ処理のための装置。 - 前記環状プレナムの第1の部分が、前記第2のチャンバライナの底壁と前記チャンバ本体の底面との間に画定され、
前記環状プレナムの第2の部分が、前記第2のチャンバライナの外壁と前記チャンバ本体の壁との間に画定される請求項1記載の装置。 - 少なくとも1つの開口が前記第2のチャンバライナのそれぞれの四分円に存在する請求項1記載の装置。
- 対向する四分円より少ない開口が、前記第2のチャンバライナの第1の四分円に存在する請求項3記載の装置。
- 前記第2のチャンバライナの第1の四分円が、チャンバ本体内の排出口に隣接して位置する請求項4記載の装置。
- 対向する四分円より小さい開口が、前記第2のチャンバライナの第1の四分円に存在する請求項3記載の装置。
- 前記第2のチャンバライナの第1の四分円が、チャンバ本体内の排出口に隣接して位置する請求項6記載の装置。
- プラズマチャンバのための環状チャンバライナであって、
底壁と、
該底壁から上方へ延びる内壁と、
該底壁から上方へ延びる外壁とを備え、
該環状チャンバライナが、該底壁及び該外壁に亘って貫通して延びる複数のスロットを有し、
少なくとも1つのスロットが、該環状チャンバライナのそれぞれの四分円内に存在するように、該複数のスロットが配置されるプラズマチャンバのための環状チャンバライナ。 - 前記環状チャンバライナの1つの四分円が、他の3つの四分円より少ないスロットを有する請求項8記載の環状チャンバライナ。
- 前記環状チャンバライナの1つの四分円が、他の3つの四分円より多い数のスロットを有する請求項8記載の環状チャンバライナ。
- 前記環状チャンバライナの1つの四分円が、他の3つの四分円より大きいスロットを有する請求項8記載の環状チャンバライナ。
- 前記環状チャンバライナの1つの四分円が、他の3つの四分円より小さいスロットを有する請求項8記載の環状チャンバライナ。
- エッチング装置であって、
チャンバ本体と、
該チャンバ本体に配置された基板支持ペデスタルと、
該基板支持ペデスタルに対向してチャンバ本体内に配置されたガス導入シャワーヘッドと、
上部チャンバライナであって、該チャンバ本体内に配置され、これによって、該基板支持ペデスタル、該ガス導入シャワーヘッド、及び上部チャンバライナが少なくとも部分的に処理領域を包囲する上部チャンバライナと、
該基板支持ペデスタルに連結し、該ペデスタルを包囲する環状バッフルと、
下部チャンバライナであって、
底壁と、
該環状バッフルの下方に構成され、該基板支持ペデスタルを包囲する内壁と、
該底壁から上方へ傾斜する外壁とを備える下部チャンバライナとを備え、
該下部チャンバライナが、該底壁及び該外壁に亘って貫通して延びる、処理ガスの均一な真空吸引を更に促進するためのサイズ及び位置決めを調整した複数のスロットを有し、該下部チャンバライナが該チャンバ本体内に配置され、これによって、環状プレナムが該下部チャンバライナの底壁及び外壁と該チャンバ本体の底部及び外壁との間に画定され、
該環状プレナムが、該上部チャンバライナの背後に設けられた排出口と流体連通状態にあるエッチング装置。 - 前記下部チャンバライナの1つの四分円が、対向する四分円より少ないスロットを有する請求項13記載の装置。
- 前記下部チャンバライナの1つの四分円が、対向する四分円より大きいスロットを有する請求項13記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US12/099,007 | 2008-04-07 | ||
US12/099,007 US7987814B2 (en) | 2008-04-07 | 2008-04-07 | Lower liner with integrated flow equalizer and improved conductance |
PCT/US2009/039662 WO2009126576A2 (en) | 2008-04-07 | 2009-04-06 | Lower liner with integrated flow equalizer and improved conductance |
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JP2011517116A JP2011517116A (ja) | 2011-05-26 |
JP2011517116A5 JP2011517116A5 (ja) | 2012-05-31 |
JP5875864B2 true JP5875864B2 (ja) | 2016-03-02 |
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US (4) | US7987814B2 (ja) |
JP (1) | JP5875864B2 (ja) |
KR (4) | KR101267452B1 (ja) |
CN (2) | CN101990789B (ja) |
TW (4) | TWI387035B (ja) |
WO (1) | WO2009126576A2 (ja) |
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CN103402299A (zh) | 2013-11-20 |
US8440019B2 (en) | 2013-05-14 |
KR20100135894A (ko) | 2010-12-27 |
CN103402299B (zh) | 2018-10-09 |
CN101990789B (zh) | 2013-07-17 |
TWI397145B (zh) | 2013-05-21 |
US8282736B2 (en) | 2012-10-09 |
TW201308501A (zh) | 2013-02-16 |
US20120145326A1 (en) | 2012-06-14 |
TW201334104A (zh) | 2013-08-16 |
TWI397144B (zh) | 2013-05-21 |
KR20120123161A (ko) | 2012-11-07 |
KR20130071504A (ko) | 2013-06-28 |
US8118938B2 (en) | 2012-02-21 |
US20090250169A1 (en) | 2009-10-08 |
JP2011517116A (ja) | 2011-05-26 |
TWI387035B (zh) | 2013-02-21 |
KR101267452B1 (ko) | 2013-05-31 |
TWI435401B (zh) | 2014-04-21 |
US20120325406A1 (en) | 2012-12-27 |
WO2009126576A3 (en) | 2010-03-18 |
US7987814B2 (en) | 2011-08-02 |
CN101990789A (zh) | 2011-03-23 |
TW200947592A (en) | 2009-11-16 |
WO2009126576A2 (en) | 2009-10-15 |
US20110284166A1 (en) | 2011-11-24 |
TW201308502A (zh) | 2013-02-16 |
KR20120123162A (ko) | 2012-11-07 |
KR101267431B1 (ko) | 2013-05-30 |
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