CN103402299B - 具有整合的均流器并具有改善的传导性的下部内衬件 - Google Patents
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Abstract
等离子体处理室具有带有整合均流器的下部内衬件。在蚀刻处理中,处理气体会被不均匀地从处理室抽吸,其可导致衬底的不均匀蚀刻。所述整合均流器配置成将使从该室经由下部内衬件排出的处理气体的流动均匀。
Description
本申请是在2010年10月8日提交的申请号为200980112419.3且名称为“具有整合的均流器并具有改善的传导性的下部内衬件”的专利申请的分案申请。
技术领域
本发明的实施例大体上涉及等离子体处理室,其具有下部室内衬件。
背景技术
现代的集成电路是复杂的装置,其在单一芯片上可包含数百万个部件;不过,对更快、更小的电子装置的需求总是不停在增加。此需求不仅需要更快的电路,其亦需要各芯片上的更大的电路密度。为了达到更大的电路密度,集成电路部件的特征结构的最小尺寸或临界尺寸同样必须缩小。
缩小集成电路部件的特征结构的临界尺寸需要衬底各处严格的处理均匀性以维持高成品率。与用于制造集成电路的传统等离子体蚀刻处理相关的一个问题在于衬底各处的蚀刻速度不均匀。这类不均匀可部分地归因于真空泵将蚀刻气体向设在蚀刻室中的排气端口抽吸,并使其远离衬底。由于气体更容易从室中最接近排气端口的区域抽离,所以蚀刻气体被吸向排气端口并远离衬底。这在放置于其中的衬底上产生不均匀蚀刻,其可显著降低所生产的集成电路的效能并显著增加制造成本。
因此,对在集成电路制造期间均匀蚀刻材料层的设备存在有需求。
发明内容
在一实施例中,整合均流器设置在等离子体处理室中。在一实施例中,整合均流器被配置为保护下部室壁免于暴露于等离子体,并允许改善的气流传导性。在一实施例中,下部室内衬件从室底部壁升高,以在该下部室内衬件与该底部壁之间产生高传导性气室。在一实施例中,下部室内衬件具有形成为通过该下部室内衬件的孔,其被配置成使由与该气室流体连通的真空泵所抽吸的处理气体的流动均匀,其导致均匀的等离子体流及位于该等离子体处理室中的衬底上分布的均匀蚀刻。
在本发明的一实施例中,一种用于等离子体处理的设备包含:室主体;第一室内衬件,其布置在所述室主体内;以及第二室内衬件,其布置在所述室主体内,位于所述第一室内衬件下方。所述第二室内衬件电耦合至所述第一室内衬件。所述第二室内衬件相对所述室主体的底表面位于升高的位置,使得在所述第二室内衬件与所述室主体的所述底表面之间界定环形气室。所述第二室内衬件具有形成为通过所述第二内衬件的孔,并被配置为使由与所述气室连通的真空泵抽吸的处理气体的流动均匀。
在本发明的另一实施例中,一种用于等离子体室的环形室内衬件包含:底部壁;内侧壁,其从所述底部壁向上延伸;以及外侧壁,其从所述底部壁向上且向外延伸。所述环形室内衬件具有延伸通过所述底部壁及外侧壁的多个缝隙。所述多个缝隙被配置成使得在所述环形室内衬件的各四分之一圆内均存在至少一个缝隙。
在本发明的另一实施例中,一种蚀刻设备包含:室主体;衬底支撑基座,其被布置在所述室主体中;气体引入喷气头,其被布置在所述室中并与所述衬底支撑基座相对;以及上部室内衬件,其被布置在所述室主体中。所述上部室内衬件被布置在所述室主体中,使得所述衬底支撑基座、所述气体引入喷气头、及所述第一室内衬件至少部分地围绕处理区域。环形挡板耦合至所述衬底支撑基座并围绕所述衬底支撑基座。包含底部壁、内侧壁和外侧壁的下部室内衬件设置在所述环形挡板下方并围绕所述衬底支撑基座,所述外侧壁从所述底部壁向上且向外倾斜延伸。所述下部室内衬件被布置在所述室主体内,使得在所述下部室内衬件的所述底部壁和所述外侧壁与所述室主体的底部和外侧壁之间界定环形气室。所述下部室衬件具有形成为通过所述下部室内衬件的缝隙,以使由与所述气室流体连通的真空泵所抽吸的处理气体的流动均匀。
附图说明
因此,为了可以详细理解本发明的以上所述特征,下面将参照附图中示出的实施例,对本发明的以上简要叙述进行更具体的描述。然而,应该注意,附图中只示出了本发明典型的实施例,因此不能认为其是对本发明范围的限定,本发明可以允许其它等同的有效实施例。
图1是根据本发明的一个实施例的蚀刻设备的示意性剖视图。
图2A是根据本发明的一实施例的具有整合均流器的下部室内衬件的示意性部分剖视图。
图2B是图2A的室内衬件的示意性底视图。
图3是本发明的下部室内衬件的另一实施例的示意性底视图。
具体实施方式
本发明的实施例大体上包含等离子体处理室,其具有下部室内衬件,其中该下部室内衬件具有整合的均流器。本发明的不同实施例将在下文关于蚀刻室进行叙述。不过,数种等离子体沉积及蚀刻室可受益于此处所揭示的教导,尤其是电介质蚀刻室,例如,可成为为如***的半导体晶片处理***的一部分的蚀刻室、蚀刻室、蚀刻室等,上述皆可由加州圣塔克拉拉的应用材料公司购得。所构思的是,其他等离子体反应器(包含来自其他制造商者的那些)也可适于从本发明受益。
图1是根据本发明的一个实施例的蚀刻设备100的示意性剖视图。设备100包含室主体102,在室主体102中衬底104可布置在与气体引入喷气头108相对的基座106上。处理气体可透过喷气头108供应给室102。处理气体可从气源110透过喷气头108供应给室102。在一个实施例中,基座106可利用来自电源130的电流而偏压。在另一实施例中,喷气头108可以利用来自电源112的电流而偏压。
在处理期间,处理气体系透过喷气头108供应至处理区域128中,在处理区域128中,处理气体以等离子体的形式从衬底104蚀刻材料。等离子体不仅可延伸至衬底104,而且亦可延伸至室壁。可存在有上部内衬件126以保护室壁免于等离子体。上部内衬件126可保护室壁免于暴露于等离子体。此外,上部内衬件126可在欲清洁或更换的处理停机期间移除。
环形挡板116可围绕衬底104及基座106。环形挡板116可延伸接近上部内衬件126并具有多个缝隙穿过。挡板116中的缝隙允许欲抽吸的处理气体通过其中以排出处理室主体102。缝隙可制成一定的尺寸以消除或减少通过挡板116的等离子体的量。
处理气体亦可在挡板116与上部内衬件126之间的区域中围绕挡板116被抽吸。一般说来,大部分等离子体局限在处理区域128中,但某些等离子体可延伸超出挡板116的外径并被引至挡板116下方。可存在下部室内衬件120以保护下部室壁免于等离子体。下部内衬件120可在欲清洁或更换的处理停机期间移除。下部内衬件120可藉由紧固机构124耦合至室主体102底部。在一实施例中,紧固机构124可包含螺栓。在一实施例中,紧固机构124可钻孔装埋在下部内衬件120中。
真空泵114可对处理室主体102进行排气,并因而将处理气体抽吸通过挡板116及通过挡板116与上部内衬件126之间的区域。下部室内衬件120可被配置在相对室主体102底部的升高位置,以致大气室122可围绕室主体102的整个周围位于下部室内衬件120的底表面121与室主体102的底表面101之间。此外,下部室内衬件120可具有向上倾斜的外部壁123,使得气室122围绕下部室内衬件120的整个周围在下部室内衬件的外部壁123与室主体102的壁103之间向上延伸。下部室内衬件120可包含多个孔(在图1中未示出)以将抽吸通过其中的处理气体的流动均匀。合适的孔的范例可在图2B及3中看到。大气室122用于使真空抽吸广泛地分布。在一实施例中,可在与室主体102的排气端口113最接近的区域中产生通过下部室内衬件120的最大程度抽吸,这可导致蚀刻等离子体在衬底104各处的不均匀。在一实施例中,欲进一步促进处理气体在环形下部室内衬件120各处的均匀的真空抽吸,下部室内衬件120中的孔的尺寸及定位可如下文针对图2B及3所述的那样安排。
此外,下部室内衬件120电耦合至上部室内衬件126,两者皆为接地。当射频等离子体存在时,寻求接地回路的射频电流可沿上部内衬件126及/或下部内衬件120具有最小电阻的路径行进。将下部室内衬件120电耦合至上部室内衬件126提供了实质性的表面积给寻求接地路径的射频电流。结果,等离子体可在室100中于衬底104上方更为均匀地延伸,导致增加的蚀刻均匀性。
图2A是根据本发明的一个实施例的下部室内衬件200的示意性剖视图。下部内衬件包含从底部壁204向上延伸的内侧壁202。内侧壁202保护基座下方的区域使之免于等离子体暴露。外侧壁206从底部壁204向上倾斜地延伸至下部室内衬件200的外周。多个气体通道208如图2B及3所描绘并如下文所述那样延伸遍及外部壁206及底部壁204且穿过外部壁206及底部壁204。
图2B是图2A的下部室内衬件200的示意性底视图。如图2B所示,底部壁204及侧壁206中的气体通道208在第一四分之一圆210中以间距间隔开,其中第一四分之一圆210位于与室主体102中的排气端口113相邻的位置。气体通道208可在延伸远离下部室内衬件200的第一四分之一圆210的第二四分之一圆220及第三四分之一圆230中间距以更窄的间距间隔开。在一实施例中,气体通道208的间隔可在第二四分之一圆220及第三四分之一圆230处随着延伸远离第一四分之一圆210而减少。在另一实施例中,气体通道可在第二四分之一圆220及第三四分之一圆230各处等间隔。气体通道208在第四四分之一圆240上为最窄间隔,其中第四四分之一圆240位于最远离室主体102的排气端口113的位置处。
图3是根据本发明的另一实施例的下部室内衬件300的示意性底视图。在此实施例中,细气体通路307在室内衬件300的第一四分之一圆310上以宽间距间隔开,其中第一四分之一圆310位于与室主体102中的排气端口113相邻的位置处。比细气体通路307大的中尺寸气体通路308在延伸远离第一四分之一圆310的第二四分之一圆320及第三四分之一圆330上以更窄的间隔布置。比中尺寸气体通路308大的大气体通路309分布在下部室内衬件300的第四四分之一圆340上,其中第四四分之一圆340位于最远离室主体102的排气端口113的位置处。大气体通路309以细结构肋片分隔。在一实施例中,单一气体信道309延伸过整个第四四分之一圆340。在另一实施例中,第四四分之一圆340被划分为两个气体通路309,在所述两个气体通路309之间具有单一结构肋片341。
藉由配置延伸通过下部室内衬件120、200、300的气体通路208、307至309,使得最远离室100的排气端口113的区域具有最大开口,而与排气端口113相邻的区域具有最小面积,来自处理区域128的真空抽吸的均匀性可因而增加。相应地,藉由使来自处理区域128的真空抽吸均匀化,等离子体分布及最终的蚀刻均匀性亦可因而增加。
虽然前文针对本发明的实施例,本发明的其它及进一步的实施例可在不偏离其基本范围的情况下构思得到,且本发明的范围由所附权利要求决定。
Claims (8)
1.一种蚀刻设备,所述蚀刻设备包含:
具有底部壁的室主体;
衬底支撑基座,所述衬底支撑基座被布置在所述室主体中;
气体引入喷气头,所述气体引入喷气头被布置在所述蚀刻设备中并与所述衬底支撑基座相对;
上部室内衬件,所述上部室内衬件被布置在所述室主体中,使得所述衬底支撑基座、所述气体引入喷气头、以及所述上部室内衬件至少部分地围绕处理区域;
环形挡板,所述环形挡板耦合至所述衬底支撑基座并围绕所述衬底支撑基座;以及
下部室内衬件,所述下部室内衬件包含:
环形底部壁;
内侧壁,所述内侧壁被配置在所述环形挡板下方并围绕所述衬底支撑基座;以及
外侧壁,所述外侧壁从所述环形底部壁向上且向外倾斜延伸,其中所述环形底部壁与所述外侧壁整合在一起,其中所述下部室内衬件具有多个缝隙,所述多个缝隙连续地延伸通过所述环形底部壁和所述外侧壁并被布置在所述室主体内,使得在所述下部室内衬件的所述环形底部壁和所述外侧壁与所述室主体的所述底部壁和外侧壁之间界定环形气室,其中所述多个缝隙被配置为使得处理气体通过所述下部室内衬件的流动均匀;以及
排气端口,所述排气端口被布置在所述室主体的所述外侧壁中,其中所述排气端口在所述下部室内衬件的所述外侧壁上方,且其中所述环形气室与所述排气端口流体连通。
2.根据权利要求1所述的设备,其中所述下部室内衬件的一个四分之一圆比其他的四分之一圆具有更少的缝隙。
3.根据权利要求1所述的设备,其中所述下部室内衬件的一个四分之一圆比其他的四分之一圆具有更大的缝隙。
4.一种用于等离子体处理的设备,所述设备包含:
具有底部壁的室主体;
第一室内衬件,所述第一室内衬件布置在所述室主体内;
第二室内衬件,所述第二室内衬件布置在所述室主体内,位于所述第一室内衬件下方,并电耦合至所述第一室内衬件,其中所述第二室内衬件包含:
环形底部壁;
外侧壁,所述外侧壁从所述环形底部壁向上且向外倾斜延伸,其中所述环形底部壁与所述外侧壁整合在一起,其中所述第二室内衬件具有连续地延伸通过所述环形底部壁和所述外侧壁两者的多个缝隙,其中所述多个缝隙被配置为使得处理气体通过所述第二室内衬件的流动均匀,并且其中所述多个缝隙被配置成使得在所述第二室内衬件的各四分之一圆内均存在至少一个缝隙;以及
环形气室,所述环形气室布置在所述室主体的所述底部壁与所述第二室内衬件的所述外侧壁之间;以及
排气端口,所述排气端口被布置在所述室主体中,其中所述排气端口在所述第二室内衬件的所述外侧壁上方,且其中所述环形气室与所述排气端口和所述多个缝隙流体连通。
5.根据权利要求4所述的设备,其中所述第二室内衬件的所述环形底部壁耦合至所述室主体的所述底部壁。
6.一种等离子体处理设备,所述等离子体处理设备包含:
具有底部壁的室主体;
衬底支撑基座,所述衬底支撑基座被布置在所述室主体中;
气体引入喷气头,所述气体引入喷气头被布置在所述等离子体处理设备中并与所述衬底支撑基座相对;
上部室内衬件,所述上部室内衬件被布置在所述室主体中,使得所述衬底支撑基座、所述气体引入喷气头、以及所述上部室内衬件至少部分地围绕处理区域;
下部室内衬件,所述下部室内衬件布置在所述室主体内,位于所述上部室内衬件下方,并电耦合至所述上部室内衬件,其中所述下部室内衬件包含:
环形底部壁;
外侧壁,所述外侧壁从所述环形底部壁向上且向外倾斜延伸,其中所述环形底部壁与所述外侧壁整合在一起,其中所述下部室内衬件具有连续地延伸通过所述底部壁和所述外侧壁两者的多个缝隙,其中所述多个缝隙被配置为使得处理气体通过所述下部室内衬件的流动均匀,并且其中所述多个缝隙被配置成使得在所述下部室内衬件的各四分之一圆内均存在至少一个缝隙;以及
环形气室,所述环形气室布置在所述室主体的所述底部壁与所述下部室内衬件的所述外侧壁之间;以及
排气端口,所述排气端口被布置在所述室主体中,其中所述排气端口位于所述下部室内衬件的所述外侧壁上方,且其中所述环形气室与所述排气端口和所述多个缝隙流体连通。
7.根据权利要求6所述的设备,还包括环形挡板,所述环形挡板被布置成围绕所述衬底支撑基座。
8.根据权利要求6所述的设备,其中所述下部室内衬垫耦合至所述室主体。
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- 2009-04-06 WO PCT/US2009/039662 patent/WO2009126576A2/en active Application Filing
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- 2009-04-06 KR KR1020137015604A patent/KR20130071504A/ko not_active Application Discontinuation
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WO2009126576A3 (en) | 2010-03-18 |
TWI435401B (zh) | 2014-04-21 |
CN101990789A (zh) | 2011-03-23 |
KR20120123161A (ko) | 2012-11-07 |
US8118938B2 (en) | 2012-02-21 |
KR20100135894A (ko) | 2010-12-27 |
KR20120123162A (ko) | 2012-11-07 |
TW201334104A (zh) | 2013-08-16 |
CN101990789B (zh) | 2013-07-17 |
KR101267452B1 (ko) | 2013-05-31 |
WO2009126576A2 (en) | 2009-10-15 |
CN103402299A (zh) | 2013-11-20 |
TW200947592A (en) | 2009-11-16 |
TW201308502A (zh) | 2013-02-16 |
TWI397145B (zh) | 2013-05-21 |
US7987814B2 (en) | 2011-08-02 |
JP2011517116A (ja) | 2011-05-26 |
US20110284166A1 (en) | 2011-11-24 |
JP5875864B2 (ja) | 2016-03-02 |
US8440019B2 (en) | 2013-05-14 |
US20120145326A1 (en) | 2012-06-14 |
US20090250169A1 (en) | 2009-10-08 |
KR101267431B1 (ko) | 2013-05-30 |
US8282736B2 (en) | 2012-10-09 |
TWI397144B (zh) | 2013-05-21 |
KR20130071504A (ko) | 2013-06-28 |
US20120325406A1 (en) | 2012-12-27 |
TWI387035B (zh) | 2013-02-21 |
TW201308501A (zh) | 2013-02-16 |
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