SG11202001343SA - Liner, reaction chamber, and semiconductor processing device - Google Patents
Liner, reaction chamber, and semiconductor processing deviceInfo
- Publication number
- SG11202001343SA SG11202001343SA SG11202001343SA SG11202001343SA SG11202001343SA SG 11202001343S A SG11202001343S A SG 11202001343SA SG 11202001343S A SG11202001343S A SG 11202001343SA SG 11202001343S A SG11202001343S A SG 11202001343SA SG 11202001343S A SG11202001343S A SG 11202001343SA
- Authority
- SG
- Singapore
- Prior art keywords
- liner
- processing device
- reaction chamber
- semiconductor processing
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201721033212.5U CN207183210U (en) | 2017-08-17 | 2017-08-17 | Reaction chamber and semiconductor processing equipment |
CN201710708391.6A CN107578975B (en) | 2017-08-17 | 2017-08-17 | Reaction chamber and semiconductor processing equipment |
PCT/CN2018/095437 WO2019033878A1 (en) | 2017-08-17 | 2018-07-12 | Liner, reaction chamber and semiconductor processing equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202001343SA true SG11202001343SA (en) | 2020-03-30 |
Family
ID=65362125
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202001343SA SG11202001343SA (en) | 2017-08-17 | 2018-07-12 | Liner, reaction chamber, and semiconductor processing device |
Country Status (3)
Country | Link |
---|---|
US (1) | US20210193434A1 (en) |
SG (1) | SG11202001343SA (en) |
WO (1) | WO2019033878A1 (en) |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5641375A (en) * | 1994-08-15 | 1997-06-24 | Applied Materials, Inc. | Plasma etching reactor with surface protection means against erosion of walls |
EP0821395A3 (en) * | 1996-07-19 | 1998-03-25 | Tokyo Electron Limited | Plasma processing apparatus |
US6273022B1 (en) * | 1998-03-14 | 2001-08-14 | Applied Materials, Inc. | Distributed inductively-coupled plasma source |
US6170429B1 (en) * | 1998-09-30 | 2001-01-09 | Lam Research Corporation | Chamber liner for semiconductor process chambers |
JP3606198B2 (en) * | 2000-12-14 | 2005-01-05 | 株式会社日立製作所 | Plasma processing equipment |
US6830622B2 (en) * | 2001-03-30 | 2004-12-14 | Lam Research Corporation | Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof |
US20040027781A1 (en) * | 2002-08-12 | 2004-02-12 | Hiroji Hanawa | Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling |
JP4889326B2 (en) * | 2006-03-13 | 2012-03-07 | 東京エレクトロン株式会社 | Processing device and lid opening / closing mechanism |
US7938931B2 (en) * | 2006-05-24 | 2011-05-10 | Lam Research Corporation | Edge electrodes with variable power |
US20090188625A1 (en) * | 2008-01-28 | 2009-07-30 | Carducci James D | Etching chamber having flow equalizer and lower liner |
US7987814B2 (en) * | 2008-04-07 | 2011-08-02 | Applied Materials, Inc. | Lower liner with integrated flow equalizer and improved conductance |
US8485128B2 (en) * | 2010-06-30 | 2013-07-16 | Lam Research Corporation | Movable ground ring for a plasma processing chamber |
CN106783490B (en) * | 2015-11-23 | 2018-09-18 | 北京北方华创微电子装备有限公司 | Liner grounding assembly, reaction chamber and semiconductor processing equipment |
CN207183210U (en) * | 2017-08-17 | 2018-04-03 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
CN107578975B (en) * | 2017-08-17 | 2020-06-19 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
-
2018
- 2018-07-12 SG SG11202001343SA patent/SG11202001343SA/en unknown
- 2018-07-12 WO PCT/CN2018/095437 patent/WO2019033878A1/en active Application Filing
- 2018-07-12 US US16/638,688 patent/US20210193434A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2019033878A1 (en) | 2019-02-21 |
US20210193434A1 (en) | 2021-06-24 |
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