SG11202001343SA - Liner, reaction chamber, and semiconductor processing device - Google Patents

Liner, reaction chamber, and semiconductor processing device

Info

Publication number
SG11202001343SA
SG11202001343SA SG11202001343SA SG11202001343SA SG11202001343SA SG 11202001343S A SG11202001343S A SG 11202001343SA SG 11202001343S A SG11202001343S A SG 11202001343SA SG 11202001343S A SG11202001343S A SG 11202001343SA SG 11202001343S A SG11202001343S A SG 11202001343SA
Authority
SG
Singapore
Prior art keywords
liner
processing device
reaction chamber
semiconductor processing
semiconductor
Prior art date
Application number
SG11202001343SA
Inventor
Jinrong Zhao
Kai Chang
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201721033212.5U external-priority patent/CN207183210U/en
Priority claimed from CN201710708391.6A external-priority patent/CN107578975B/en
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of SG11202001343SA publication Critical patent/SG11202001343SA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32477Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495Means for protecting the vessel against plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
SG11202001343SA 2017-08-17 2018-07-12 Liner, reaction chamber, and semiconductor processing device SG11202001343SA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201721033212.5U CN207183210U (en) 2017-08-17 2017-08-17 Reaction chamber and semiconductor processing equipment
CN201710708391.6A CN107578975B (en) 2017-08-17 2017-08-17 Reaction chamber and semiconductor processing equipment
PCT/CN2018/095437 WO2019033878A1 (en) 2017-08-17 2018-07-12 Liner, reaction chamber and semiconductor processing equipment

Publications (1)

Publication Number Publication Date
SG11202001343SA true SG11202001343SA (en) 2020-03-30

Family

ID=65362125

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202001343SA SG11202001343SA (en) 2017-08-17 2018-07-12 Liner, reaction chamber, and semiconductor processing device

Country Status (3)

Country Link
US (1) US20210193434A1 (en)
SG (1) SG11202001343SA (en)
WO (1) WO2019033878A1 (en)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5641375A (en) * 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
EP0821395A3 (en) * 1996-07-19 1998-03-25 Tokyo Electron Limited Plasma processing apparatus
US6273022B1 (en) * 1998-03-14 2001-08-14 Applied Materials, Inc. Distributed inductively-coupled plasma source
US6170429B1 (en) * 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
JP3606198B2 (en) * 2000-12-14 2005-01-05 株式会社日立製作所 Plasma processing equipment
US6830622B2 (en) * 2001-03-30 2004-12-14 Lam Research Corporation Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof
US20040027781A1 (en) * 2002-08-12 2004-02-12 Hiroji Hanawa Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling
JP4889326B2 (en) * 2006-03-13 2012-03-07 東京エレクトロン株式会社 Processing device and lid opening / closing mechanism
US7938931B2 (en) * 2006-05-24 2011-05-10 Lam Research Corporation Edge electrodes with variable power
US20090188625A1 (en) * 2008-01-28 2009-07-30 Carducci James D Etching chamber having flow equalizer and lower liner
US7987814B2 (en) * 2008-04-07 2011-08-02 Applied Materials, Inc. Lower liner with integrated flow equalizer and improved conductance
US8485128B2 (en) * 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
CN106783490B (en) * 2015-11-23 2018-09-18 北京北方华创微电子装备有限公司 Liner grounding assembly, reaction chamber and semiconductor processing equipment
CN207183210U (en) * 2017-08-17 2018-04-03 北京北方华创微电子装备有限公司 Reaction chamber and semiconductor processing equipment
CN107578975B (en) * 2017-08-17 2020-06-19 北京北方华创微电子装备有限公司 Reaction chamber and semiconductor processing equipment

Also Published As

Publication number Publication date
WO2019033878A1 (en) 2019-02-21
US20210193434A1 (en) 2021-06-24

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