JP5700750B2 - 印刷ベースの組立により製作される光学システム - Google Patents
印刷ベースの組立により製作される光学システム Download PDFInfo
- Publication number
- JP5700750B2 JP5700750B2 JP2009546361A JP2009546361A JP5700750B2 JP 5700750 B2 JP5700750 B2 JP 5700750B2 JP 2009546361 A JP2009546361 A JP 2009546361A JP 2009546361 A JP2009546361 A JP 2009546361A JP 5700750 B2 JP5700750 B2 JP 5700750B2
- Authority
- JP
- Japan
- Prior art keywords
- millimeters
- printable semiconductor
- printable
- range
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title claims description 285
- 238000007639 printing Methods 0.000 title description 56
- 239000004065 semiconductor Substances 0.000 claims description 601
- 238000000034 method Methods 0.000 claims description 287
- 239000000758 substrate Substances 0.000 claims description 286
- 238000002508 contact lithography Methods 0.000 claims description 94
- 238000012546 transfer Methods 0.000 claims description 85
- 238000004519 manufacturing process Methods 0.000 claims description 72
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 65
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 65
- 229910052751 metal Inorganic materials 0.000 claims description 57
- 239000002184 metal Substances 0.000 claims description 57
- 239000011521 glass Substances 0.000 claims description 42
- 229920001971 elastomer Polymers 0.000 claims description 23
- 238000000576 coating method Methods 0.000 claims description 22
- 239000000806 elastomer Substances 0.000 claims description 22
- 239000011248 coating agent Substances 0.000 claims description 14
- 150000002739 metals Chemical class 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical group C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims 2
- 239000010410 layer Substances 0.000 description 220
- 210000004027 cell Anatomy 0.000 description 189
- 239000000463 material Substances 0.000 description 103
- 230000008569 process Effects 0.000 description 98
- 238000010586 diagram Methods 0.000 description 90
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 71
- 235000012431 wafers Nutrition 0.000 description 71
- 238000012545 processing Methods 0.000 description 57
- 229910052710 silicon Inorganic materials 0.000 description 55
- 239000010703 silicon Substances 0.000 description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 53
- 238000005530 etching Methods 0.000 description 30
- 238000003491 array Methods 0.000 description 29
- 239000010409 thin film Substances 0.000 description 28
- 229920000642 polymer Polymers 0.000 description 26
- 239000011159 matrix material Substances 0.000 description 25
- 238000000151 deposition Methods 0.000 description 23
- 239000000203 mixture Substances 0.000 description 23
- 238000000059 patterning Methods 0.000 description 22
- 238000005452 bending Methods 0.000 description 21
- 239000004033 plastic Substances 0.000 description 21
- 229920003023 plastic Polymers 0.000 description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 20
- 229910052796 boron Inorganic materials 0.000 description 19
- 238000000206 photolithography Methods 0.000 description 19
- 239000013078 crystal Substances 0.000 description 18
- 230000008901 benefit Effects 0.000 description 17
- 238000005538 encapsulation Methods 0.000 description 17
- 238000004891 communication Methods 0.000 description 16
- 230000010354 integration Effects 0.000 description 16
- 239000002019 doping agent Substances 0.000 description 15
- 239000010931 gold Substances 0.000 description 15
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 14
- 239000002131 composite material Substances 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 14
- 230000006870 function Effects 0.000 description 14
- 238000005286 illumination Methods 0.000 description 14
- 229920000307 polymer substrate Polymers 0.000 description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 13
- 239000012790 adhesive layer Substances 0.000 description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 12
- 238000003306 harvesting Methods 0.000 description 12
- 238000001465 metallisation Methods 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 11
- 238000010023 transfer printing Methods 0.000 description 11
- 238000013461 design Methods 0.000 description 10
- 230000014509 gene expression Effects 0.000 description 10
- 238000000820 replica moulding Methods 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 238000002161 passivation Methods 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 238000003466 welding Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000013307 optical fiber Substances 0.000 description 7
- 230000005693 optoelectronics Effects 0.000 description 7
- 238000003672 processing method Methods 0.000 description 7
- 238000002174 soft lithography Methods 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 7
- 239000007858 starting material Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000013459 approach Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 230000005670 electromagnetic radiation Effects 0.000 description 6
- 238000010030 laminating Methods 0.000 description 6
- 238000004377 microelectronic Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 6
- 238000007670 refining Methods 0.000 description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- -1 etc.) Substances 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000003631 wet chemical etching Methods 0.000 description 4
- 229910005542 GaSb Inorganic materials 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910007709 ZnTe Inorganic materials 0.000 description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000708 deep reactive-ion etching Methods 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 229920002457 flexible plastic Polymers 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 230000008520 organization Effects 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 229910017115 AlSb Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 241000252506 Characiformes Species 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910002665 PbTe Inorganic materials 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004299 exfoliation Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000037230 mobility Effects 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 230000008450 motivation Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 238000013082 photovoltaic technology Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 2
- 229920002725 thermoplastic elastomer Polymers 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910005543 GaSe Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 101100515452 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) rca-1 gene Proteins 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 229920002367 Polyisobutene Polymers 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 238000010170 biological method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- FACXGONDLDSNOE-UHFFFAOYSA-N buta-1,3-diene;styrene Chemical compound C=CC=C.C=CC1=CC=CC=C1.C=CC1=CC=CC=C1 FACXGONDLDSNOE-UHFFFAOYSA-N 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910052949 galena Inorganic materials 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 210000002287 horizontal cell Anatomy 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 238000002493 microarray Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 239000005445 natural material Substances 0.000 description 1
- 229940110728 nitrogen / oxygen Drugs 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000006223 plastic coating Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000012995 silicone-based technology Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920000468 styrene butadiene styrene block copolymer Polymers 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/042—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
- H01L31/0525—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells including means to utilise heat energy directly associated with the PV cell, e.g. integrated Seebeck elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
- H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3013—AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0183—Selective deposition
- B81C2201/0185—Printing, e.g. microcontact printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75753—Means for optical alignment, e.g. sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/759—Means for monitoring the connection process
- H01L2224/75901—Means for monitoring the connection process using a computer, e.g. fully- or semi-automatic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7598—Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/83005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
[0167]光起電力(PV)エネルギー変換は、半導体デバイス構造を使用して太陽光を電気へと直接変換するものである。PV産業における最も一般的な技術は、単結晶及び多結晶シリコン技術に基づいている。現在、シリコンPV技術は、バルクシリコン材料を比較的非効率に使用しているため、材料コストが高い。従来方法では、バルク結晶シリコンをソーイングしてウェーハにし、次いでウェーハを太陽電池に加工し、一緒にはんだ付けして最終モジュールを形成する。典型的な多結晶効率は15%程度であり、高性能単結晶シリコンは、20%の効率で製作されている。このタイプの太陽電池では、コストの57%が材料にあり、その総材料コストのうち42%が、結晶Siから生じている。さらに、これらのモジュールは剛性であり、重量がある。
1.単結晶シリコンウェーハ上で成長させてエッチングした、超薄型(厚さ20ミクロン未満)結晶シリコン太陽電池。この電池のサイズは、これまでのシリコン移転プロセスで使用されたサイズよりもずっと(例えば2桁)小さく、例えば、この太陽電池は、いくつかの実施形態では100ミクロン程度の長さ及び幅を有する。
2.シリコン太陽電池をマザーウェーハから取り外し、それを可撓性ポリマー基板に移転する、革新的なマイクロスタンピングプロセス。
3.必要に応じて、最終モジュールを形成するための、移転された電池の自動化相互接続。
[0190]本発明は、無機発光ダイオードを薄い可撓性基板と集積化する手段をもたらす印刷ベースの技法を提供する。自動化高精度プリンタシステムを用いて実施されるこの手法は、自動車及び他の用途向けの軽量で機械的共形性のある室内照明要素を、低コスト製造に適合する様式で製作するのに有用である。
[0202]図44は、低レベル集光レンズを有するマイクロ単結晶シリコン太陽電池の作製に関する概略図を示す。第1のステップ(a)では、マイクロ構造をPDMSからデバイスの裏面電気接点として働く埋込み電極上に転写する。シリコンは、電極表面上にPDMSをラミネートし、PDMSを後方にゆっくりと剥がすことにより転写される。次に、ステップ(b)では、平坦化と、それに続いて上部金属接点の作製を実施する。デバイスは、PDMSから作製した低集光円柱レンズアレイをデバイス上に集積化することにより、完全なものになる(ステップc)。この最終ステップでは、シリコン電池の並びがレンズアレイの焦点と整合するようにデバイスが設計されたことが分かる。
[0210]本発明は、コンタクト印刷方法により製作される半導体ベース光学システムの良好な電気接続を確立するのに有用な方法及びシステムを提供する。本発明の加工ステップ及びデバイス幾何形状は、コンタクト印刷により組み立てられた、電子デバイスと電子デバイス構成要素との間、或いは電子デバイス間又は電子デバイス構成要素間の、効率の良い、機械的に堅固な、高導電性の電気接続を可能にする。本加工ステップ及びデバイス幾何形状は、フォトリソグラフィ処理、堆積技法、及び/又はソフトリソグラフィ(例えばコンタクト印刷)パターニングを含めた、電気相互接続の一連のパターニング及び加工技法に適合する。
[0211]一態様では、本発明は、デバイス基板上にコンタクト印刷により組み立てられた半導体電子デバイス及びデバイス構成要素などの半導体要素の段差エッジから生じる、デバイス電気相互接続の電子的性能の劣化を最小限に抑え、又は完全に回避する、平坦化処理ステップ及び平坦なデバイス幾何形状を提供する。この記載の文脈では、「平坦化」とは、1つ又は複数の印刷可能半導体要素がデバイス基板と、実質的に平坦な幾何形状を有する露出面を有して表面構造が作製されるように集積化されるプロセスを指す。好ましくは、いくつかの用途では、実質的に平坦な幾何形状を有する露出面が、(1つ又は複数の)印刷半導体要素の、例えば光リソグラフィ及び堆積技法を使用してデバイス電気相互接続構造でパターニングすることができる1つ又は複数の個々の表面を含む。平坦な幾何形状とは一般に、表面上のあらゆる点が共通平面を占める表面形状を指す。しかし、この記載の文脈では、実質的に平坦な幾何形状は、絶対的に平坦な形状からのいくらかのずれを含む。いくつかの実施形態では、例えば、実質的に平坦な幾何形状が、絶対的に平坦な形状からの2ミクロン未満の表面位置のずれ、好ましくは、いくつかの実施形態では、絶対的に平坦な形状からの1ミクロン未満の表面位置のずれ、より好ましくは、いくつかの実施形態では、絶対的に平坦な形状からの500ナノメートル未満の表面位置のずれを含む。
[0228]本発明は、電気伝導性メッシュ又はグリッド電極を使用して、コンタクト印刷により組み立てられた印刷可能半導体要素を電気的に相互接続する、デバイス幾何形状及び加工方法も含む。メッシュ及びグリッドの電気相互接続要素及び/又は電極は、任意選択で共形性転写デバイスを使用して、任意選択で、コンタクト印刷方法によりデバイス基板、光学システム、又は光学構成要素の受取面上に組み立てられ、又はコンタクト印刷方法により印刷半導体要素の露出面上に組み立てられる。メッシュ及びグリッド電極を使用する利点には、それらを大面積にわたって効果的にパターニングし、それにより、コンタクト印刷デュー(due)により組み立てられる印刷可能半導体要素の配置精度の面でより大きな許容差を可能にできることがある。この加工及び設計上の利点は、印刷可能半導体要素のコンタクト印刷ベース組立に関係する加工上の制約及びデバイス幾何形状の許容差の緩和をもたらす。例えば、メッシュ及びグリッドの電極及びデバイス相互接続を使用すると、コンタクト印刷により組み立てられる印刷可能半導体要素の整合及び位置に対する設計及び配置の制約が大幅に緩和する。さらに、メッシュ及びグリッド電極を使用すると、多数の印刷可能半導体要素を、単一(又は少数の)加工ステップで効果的に電気的に相互接続することが可能になる。さらに、メッシュ又はグリッド電極の厚さ及び/又は充填率を、これらの電極が光学的に透明となるように選択することができ、それにより、そうした構成要素を、ディスプレイ、光起電力システム、感光システム、及び多機能光学システムなど、メッシュ又はグリッドを通って電磁放射を透過させる必要のある光学システム内に実装することが可能になる。いくつかの実施形態では、グリッド又はメッシュは、選択された電磁放射波長で50%を超えて光学的に透明である。
[0239]本発明は、コンタクト印刷による組立としての電極のパターニング及び電気相互接続を容易にする、印刷可能半導体デバイス及びデバイス構成要素などの印刷可能半導体要素用の電極相互接続幾何形状も含む。こうした相互接続幾何形状は、太陽電池、LED、トランジスタ、ダイオード、レーザ、及びセンサを含む、さまざまな印刷可能電子デバイス及びその構成要素に適用可能である。
[0241]本発明のコンタクト印刷ベースの加工方法の利点は、その方法が、さまざまな光学システム及びその光学構成要素上への直接的なデバイスの組立及び集積化に適合することである。これにより、さまざまな有用な構造及びデバイス幾何形状を、本製作方法を使用して効率的に得ることが可能になる。
[0248]本方法は、太陽電池アレイを含む高性能光起電力システムを製作するための、効果的な加工基盤を提供する。
[0266]本発明の方法及びシステムは、広範な物理的寸法及び形状を有する、印刷可能半導体ベースデバイス及びデバイス構成要素を含む印刷可能半導体要素を用いて実施することが可能である。コンタクト印刷により組み立てられる印刷可能半導体要素の物理的寸法及び形状に対する本発明の汎用性により、広範なデバイス製作用途が可能になり、広範な電子、光学、光電子デバイスの構成及びレイアウトが得られる。
[0274]図76は、PET基板上に印刷した、印刷可能GaAs/InGaAlP赤色LEDアレイを示す。このデバイスを作製するには、PET基板をPDMSの薄い(1〜2ミクロン)層で被覆し、PDMSを熱により硬化し、基板上に疎な金メッシュアレイをコンタクト印刷により印刷する。次いで、メッシュ電極上に1mm×1mm×約0.3mmのLEDをコンタクト印刷する。LEDを印刷した後、その基板に対して、別のメッシュアレイを収容した薄いPDMS基板をラミネートして、LEDの上面への電気的接触を作製し、約5Vで動作させる(上部左側及び右側)。薄いPDMS基板は、LEDアレイを機械的にカプセル化する働きもする。
Claims (23)
- 半導体ベースの光学システムを作製する方法であって、
内面を有する光学構成要素を準備するステップと、
前記光学構成要素の前記内面上に、電気伝導性グリッド又はメッシュを設けるステップと、
受取面を有するデバイス基板を準備するステップと、
前記デバイス基板の前記受取面上に複数の印刷可能半導体要素を乾式転写マイクロスタンピングコンタクト印刷により組み立てるステップであり、前記複数の印刷可能半導体要素のそれぞれが、0.0001ミリメートル〜1000ミリメートルの範囲から選択される長さ、0.0001ミリメートル〜1000ミリメートルの範囲から選択される幅、及び0.00001ミリメートル〜3ミリメートルの範囲から選択される厚さを有する半導体構造を備える前記ステップと、
前記グリッド又はメッシュと前記グリッド又はメッシュを有する前記光学構成要素とを前記デバイス基板にコンタクト印刷により転写するステップであり、前記グリッド又はメッシュ及び前記光学構成要素が、前記デバイス基板の前記受取面上に組み立てられた前記複数の印刷可能半導体要素の上面に配置され、前記グリッド又はメッシュが、前記光学構成要素と前記複数の印刷可能半導体要素との間に設けられ、前記グリッド又はメッシュが、前記複数の印刷可能半導体要素の少なくとも一部分と電気的に接触した状態で設けられる前記ステップと
を含み、前記乾式転写マイクロスタンピングコンタクト印刷は同時に前記複数の印刷可能半導体要素を前記受取面に転写する、方法。 - 前記複数の印刷可能半導体要素のそれぞれが、0.02ミリメートル〜30ミリメートルの範囲から選択される長さ、及び0.02ミリメートル〜30ミリメートルの範囲から選択される幅を有する半導体構造を備える、請求項1に記載の方法。
- 前記複数の印刷可能半導体要素のそれぞれが、0.1ミリメートル〜1ミリメートルの範囲から選択される長さ、及び0.1ミリメートル〜1ミリメートルの範囲から選択される幅を有する半導体構造を備える、請求項1に記載の方法。
- 前記複数の印刷可能半導体要素のそれぞれが、1ミリメートル〜10ミリメートルの範囲から選択される長さ、及び1ミリメートル〜10ミリメートルの範囲から選択される幅を有する半導体構造を備える、請求項1に記載の方法。
- 前記複数の印刷可能半導体要素のそれぞれが、0.0003ミリメートル〜0.3ミリメートルの範囲から選択される厚さを有する半導体構造を備える、請求項1に記載の方法。
- 前記複数の印刷可能半導体要素のそれぞれが、0.002ミリメートル〜0.02ミリメートルの範囲から選択される厚さを有する半導体構造を備える、請求項1に記載の方法。
- 前記メッシュ又はグリッドが1種又は複数種の金属を含む、請求項1に記載の方法。
- 前記グリッド又はメッシュが、50%を超える光学的透明度を有する、請求項1に記載の方法。
- 前記グリッド又はメッシュが、ラミネートされた構造である、請求項1に記載の方法。
- 前記グリッド又はメッシュがエラストマー層に接合される、請求項1に記載の方法。
- 前記エラストマー層が、ガラス基板に結合され、前記エラストマー層が、前記グリッド又はメッシュと前記ガラス基板との間に配置される、請求項10に記載の方法。
- 前記グリッド又はメッシュが30%未満の充填率を有する、請求項1に記載の方法。
- 前記グリッド又はメッシュが前記光学構成要素の前記内面上に、コンタクト印刷により組み立てられる、請求項1に記載の方法。
- 前記グリッド又はメッシュが前記光学構成要素の前記内面上に、共形性転写デバイスを使用して組み立てられる、請求項1に記載の方法。
- 前記グリッド又はメッシュが前記光学構成要素の前記内面上に、エラストマー転写デバイスを使用して組み立てられる、請求項1に記載の方法。
- 前記光学構成要素が、収光光学構成要素、集光光学構成要素、光拡散光学構成要素、分散光学構成要素、又は光フィルタリング光学構成要素である、請求項1に記載の方法。
- 前記光学構成要素がレンズ又はレンズアレイである、請求項1に記載の方法。
- 前記光学構成要素が、PDMS成形されたレンズ又はPDMS成形されたレンズアレイである、請求項1に記載の方法。
- 前記複数の印刷可能半導体要素が、電子デバイス又は電子デバイス構成要素である、請求項1に記載の方法。
- 前記複数の印刷可能半導体要素が、LED、レーザ、太陽電池、センサ、ダイオード、トランジスタ、p−n接合、集積回路、及びフォトダイオードからなる群から選択される1つ又は複数の電子デバイスである、請求項1に記載の方法。
- 前記印刷可能半導体要素が、別の半導体構造、誘電体構造、導電性構造、及び光学構造からなる群から選択される少なくとも1つの追加構造と共に集積化された前記半導体構造を備える、請求項1に記載の方法。
- 前記印刷可能半導体要素が、電極、誘電体層、光学コーティング、金属接点パッド、及び半導体チャネルからなる群から選択される少なくとも1つの電子デバイス構成要素と共に集積化された前記半導体構造を備える、請求項1に記載の方法。
- 前記印刷可能半導体要素が、100ナノメートル〜100ミクロンの範囲から選択される厚さを有する、請求項1に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US88530607P | 2007-01-17 | 2007-01-17 | |
US60/885,306 | 2007-01-17 | ||
US94461107P | 2007-06-18 | 2007-06-18 | |
US60/944,611 | 2007-06-18 | ||
PCT/US2007/022959 WO2008143635A1 (en) | 2007-01-17 | 2007-10-31 | Optical systems fabricated by printing-based assembly |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014049106A Division JP5804610B2 (ja) | 2007-01-17 | 2014-03-12 | 印刷ベースの組立により製作される光学システム |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010517265A JP2010517265A (ja) | 2010-05-20 |
JP5700750B2 true JP5700750B2 (ja) | 2015-04-15 |
Family
ID=40032188
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009546361A Active JP5700750B2 (ja) | 2007-01-17 | 2007-10-31 | 印刷ベースの組立により製作される光学システム |
JP2014049106A Active JP5804610B2 (ja) | 2007-01-17 | 2014-03-12 | 印刷ベースの組立により製作される光学システム |
JP2015169007A Active JP6245767B2 (ja) | 2007-01-17 | 2015-08-28 | 印刷ベースの組立により製作される光学システム |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014049106A Active JP5804610B2 (ja) | 2007-01-17 | 2014-03-12 | 印刷ベースの組立により製作される光学システム |
JP2015169007A Active JP6245767B2 (ja) | 2007-01-17 | 2015-08-28 | 印刷ベースの組立により製作される光学システム |
Country Status (8)
Country | Link |
---|---|
US (9) | US7972875B2 (ja) |
EP (1) | EP2104954B1 (ja) |
JP (3) | JP5700750B2 (ja) |
KR (3) | KR101519038B1 (ja) |
CN (4) | CN105826345B (ja) |
MY (1) | MY149292A (ja) |
TW (4) | TWI609204B (ja) |
WO (1) | WO2008143635A1 (ja) |
Families Citing this family (657)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7799699B2 (en) | 2004-06-04 | 2010-09-21 | The Board Of Trustees Of The University Of Illinois | Printable semiconductor structures and related methods of making and assembling |
US7521292B2 (en) | 2004-06-04 | 2009-04-21 | The Board Of Trustees Of The University Of Illinois | Stretchable form of single crystal silicon for high performance electronics on rubber substrates |
WO2005122285A2 (en) | 2004-06-04 | 2005-12-22 | The Board Of Trustees Of The University Of Illinois | Methods and devices for fabricating and assembling printable semiconductor elements |
US8217381B2 (en) | 2004-06-04 | 2012-07-10 | The Board Of Trustees Of The University Of Illinois | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
KR20140072135A (ko) * | 2006-01-31 | 2014-06-12 | 다우 코닝 코포레이션 | 유기 발광 다이오드용 표면 릴리프 출력 커플러의 소프트 리소그래픽 몰딩 |
MY149190A (en) | 2006-09-20 | 2013-07-31 | Univ Illinois | Release strategies for making transferable semiconductor structures, devices and device components |
KR101519038B1 (ko) | 2007-01-17 | 2015-05-11 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 프린팅기반 어셈블리에 의해 제조되는 광학 시스템 |
US8852467B2 (en) | 2007-05-31 | 2014-10-07 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a printable composition of a liquid or gel suspension of diodes |
US8809126B2 (en) | 2007-05-31 | 2014-08-19 | Nthdegree Technologies Worldwide Inc | Printable composition of a liquid or gel suspension of diodes |
US9534772B2 (en) | 2007-05-31 | 2017-01-03 | Nthdegree Technologies Worldwide Inc | Apparatus with light emitting diodes |
US8877101B2 (en) | 2007-05-31 | 2014-11-04 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a light emitting, power generating or other electronic apparatus |
US8415879B2 (en) | 2007-05-31 | 2013-04-09 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
US8846457B2 (en) | 2007-05-31 | 2014-09-30 | Nthdegree Technologies Worldwide Inc | Printable composition of a liquid or gel suspension of diodes |
US9419179B2 (en) | 2007-05-31 | 2016-08-16 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
US8674593B2 (en) | 2007-05-31 | 2014-03-18 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
US8456393B2 (en) | 2007-05-31 | 2013-06-04 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system |
US9343593B2 (en) | 2007-05-31 | 2016-05-17 | Nthdegree Technologies Worldwide Inc | Printable composition of a liquid or gel suspension of diodes |
US9425357B2 (en) | 2007-05-31 | 2016-08-23 | Nthdegree Technologies Worldwide Inc. | Diode for a printable composition |
US9018833B2 (en) | 2007-05-31 | 2015-04-28 | Nthdegree Technologies Worldwide Inc | Apparatus with light emitting or absorbing diodes |
CN102113089B (zh) | 2008-03-05 | 2014-04-23 | 伊利诺伊大学评议会 | 可拉伸和可折叠的电子器件 |
FR2933786B1 (fr) * | 2008-07-11 | 2010-08-20 | Thales Sa | Dispositif optique comportant un cristal photonique a base de gainp sans absorption a deux photons |
US7927976B2 (en) | 2008-07-23 | 2011-04-19 | Semprius, Inc. | Reinforced composite stamp for dry transfer printing of semiconductor elements |
US8679888B2 (en) | 2008-09-24 | 2014-03-25 | The Board Of Trustees Of The University Of Illinois | Arrays of ultrathin silicon solar microcells |
US8886334B2 (en) | 2008-10-07 | 2014-11-11 | Mc10, Inc. | Systems, methods, and devices using stretchable or flexible electronics for medical applications |
US9289132B2 (en) | 2008-10-07 | 2016-03-22 | Mc10, Inc. | Catheter balloon having stretchable integrated circuitry and sensor array |
US8389862B2 (en) | 2008-10-07 | 2013-03-05 | Mc10, Inc. | Extremely stretchable electronics |
US8097926B2 (en) | 2008-10-07 | 2012-01-17 | Mc10, Inc. | Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy |
US8372726B2 (en) | 2008-10-07 | 2013-02-12 | Mc10, Inc. | Methods and applications of non-planar imaging arrays |
GB0819449D0 (en) * | 2008-10-23 | 2008-12-03 | Cambridge Display Tech Ltd | Display drivers |
GB0819450D0 (en) * | 2008-10-23 | 2008-12-03 | Cambridge Display Tech Ltd | Oled driver chiplet integration |
WO2010059781A1 (en) | 2008-11-19 | 2010-05-27 | Semprius, Inc. | Printing semiconductor elements by shear-assisted elastomeric stamp transfer |
DE102009016289A1 (de) * | 2009-01-02 | 2010-07-15 | Singulus Technologies Ag | Verfahren und Vorrichtung zur Identifizierung von Gegenständen sowie zum Verfolgen von Gegenständen in einem Produktionsprozess |
WO2010081137A2 (en) * | 2009-01-12 | 2010-07-15 | Mc10, Inc. | Methods and applications of non-planar imaging arrays |
KR20100087932A (ko) * | 2009-01-29 | 2010-08-06 | 삼성전기주식회사 | 자기 조립 단분자막을 이용한 다이 어태치 방법 및 자기 조립 단분자막을 이용하여 다이가 어태치된 패키지 기판 |
MX2011008352A (es) | 2009-02-09 | 2011-11-28 | Semprius Inc | Modulos, receptores y sub-receptores fotovoltaicos tipo concentrador y metodos para formar los mismos. |
US8877648B2 (en) | 2009-03-26 | 2014-11-04 | Semprius, Inc. | Methods of forming printable integrated circuit devices by selective etching to suspend the devices from a handling substrate and devices formed thereby |
JP4871973B2 (ja) * | 2009-04-28 | 2012-02-08 | 株式会社沖データ | 半導体薄膜素子の製造方法並びに半導体ウエハ、及び、半導体薄膜素子 |
EP2430652B1 (en) * | 2009-05-12 | 2019-11-20 | The Board of Trustees of the University of Illionis | Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays |
US8889482B2 (en) * | 2009-06-14 | 2014-11-18 | Jayna Sheats | Methods to fabricate integrated circuits by assembling components |
US20110203638A1 (en) * | 2009-07-16 | 2011-08-25 | Entech Solar, Inc. | Concentrating linear photovoltaic receiver and method for manufacturing same |
US8261660B2 (en) | 2009-07-22 | 2012-09-11 | Semprius, Inc. | Vacuum coupled tool apparatus for dry transfer printing semiconductor elements |
US20120065937A1 (en) * | 2009-10-01 | 2012-03-15 | Mc10, Inc. | Methods and apparatus for measuring technical parameters of equipment, tools and components via conformal electronics |
US9723122B2 (en) | 2009-10-01 | 2017-08-01 | Mc10, Inc. | Protective cases with integrated electronics |
US8611388B2 (en) | 2009-10-13 | 2013-12-17 | Skorpios Technologies, Inc. | Method and system for heterogeneous substrate bonding of waveguide receivers |
US8368995B2 (en) | 2009-10-13 | 2013-02-05 | Skorpios Technologies, Inc. | Method and system for hybrid integration of an opto-electronic integrated circuit |
US9316785B2 (en) | 2013-10-09 | 2016-04-19 | Skorpios Technologies, Inc. | Integration of an unprocessed, direct-bandgap chip into a silicon photonic device |
US8559470B2 (en) | 2009-10-13 | 2013-10-15 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser and a phase modulator |
US9923105B2 (en) | 2013-10-09 | 2018-03-20 | Skorpios Technologies, Inc. | Processing of a direct-bandgap chip after bonding to a silicon photonic device |
US8867578B2 (en) | 2009-10-13 | 2014-10-21 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser for a cable TV transmitter |
US11181688B2 (en) | 2009-10-13 | 2021-11-23 | Skorpios Technologies, Inc. | Integration of an unprocessed, direct-bandgap chip into a silicon photonic device |
US8615025B2 (en) * | 2009-10-13 | 2013-12-24 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser |
US8630326B2 (en) | 2009-10-13 | 2014-01-14 | Skorpios Technologies, Inc. | Method and system of heterogeneous substrate bonding for photonic integration |
US8605766B2 (en) | 2009-10-13 | 2013-12-10 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser and a mach zehnder modulator |
US9936574B2 (en) | 2009-12-16 | 2018-04-03 | The Board Of Trustees Of The University Of Illinois | Waterproof stretchable optoelectronics |
US10441185B2 (en) | 2009-12-16 | 2019-10-15 | The Board Of Trustees Of The University Of Illinois | Flexible and stretchable electronic systems for epidermal electronics |
JP6046491B2 (ja) | 2009-12-16 | 2016-12-21 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | コンフォーマル電子機器を使用した生体内での電気生理学 |
EP2544598B1 (en) | 2010-03-12 | 2020-05-06 | The Board of Trustees of the University of Illionis | Waterproof stretchable optoelectronics |
CN102892356B (zh) | 2010-03-17 | 2016-01-13 | 伊利诺伊大学评议会 | 基于生物可吸收基质的可植入生物医学装置 |
US9161448B2 (en) | 2010-03-29 | 2015-10-13 | Semprius, Inc. | Laser assisted transfer welding process |
DE112011101135B4 (de) | 2010-03-29 | 2021-02-11 | X-Celeprint Limited | Elektrisch verbundene Felder von aktiven Bauteilen in Überführungsdrucktechnik |
EP2577742A2 (en) * | 2010-06-07 | 2013-04-10 | Semprius, Inc. | Photovoltaic devices with off-axis image display |
CN102309106A (zh) * | 2010-07-08 | 2012-01-11 | 富士迈半导体精密工业(上海)有限公司 | 发光太阳能伞 |
TWI427829B (zh) | 2010-07-26 | 2014-02-21 | Epistar Corp | 一種半導體光電元件及其製作方法 |
TWI419317B (zh) * | 2010-08-09 | 2013-12-11 | Memsor Corp | 感光結構之製造方法 |
US9142468B2 (en) | 2010-08-26 | 2015-09-22 | Semprius, Inc. | Structures and methods for testing printable integrated circuits |
CN103594460B (zh) * | 2010-09-01 | 2016-10-05 | 无限科技全球公司 | 二极管、二极管或其他二端集成电路的液体或胶体悬浮液的可印组成物及其制备方法 |
EP2617781B1 (en) * | 2010-09-01 | 2020-11-25 | Nthdegree Technologies Worldwide Inc. | Printable composition of a liquid or gel suspension of diodes and method of using the same |
DE102010044404A1 (de) * | 2010-09-04 | 2012-03-08 | Leica Microsystems (Schweiz) Ag | Bildsensor, Videokamera und Mikroskop |
US9455242B2 (en) | 2010-09-06 | 2016-09-27 | Epistar Corporation | Semiconductor optoelectronic device |
CA2813041C (en) | 2010-10-06 | 2018-08-21 | Natalie Ann Wisniewski | Tissue-integrating sensors |
US9899329B2 (en) | 2010-11-23 | 2018-02-20 | X-Celeprint Limited | Interconnection structures and methods for transfer-printed integrated circuit elements with improved interconnection alignment tolerance |
WO2012073604A1 (en) * | 2010-12-01 | 2012-06-07 | Panasonic Corporation | Fresnel-fly's eye microlens arrays for concentrating solar cell |
US9922967B2 (en) | 2010-12-08 | 2018-03-20 | Skorpios Technologies, Inc. | Multilevel template assisted wafer bonding |
US9442285B2 (en) | 2011-01-14 | 2016-09-13 | The Board Of Trustees Of The University Of Illinois | Optical component array having adjustable curvature |
EP2482333A1 (de) * | 2011-01-31 | 2012-08-01 | AZURSPACE Solar Power GmbH | Solarzellenempfänger |
TWI404638B (zh) * | 2011-03-16 | 2013-08-11 | Wistron Corp | 利用超臨界流體轉印薄膜至工件之方法與轉印系統 |
WO2012158709A1 (en) | 2011-05-16 | 2012-11-22 | The Board Of Trustees Of The University Of Illinois | Thermally managed led arrays assembled by printing |
KR102000302B1 (ko) * | 2011-05-27 | 2019-07-15 | 엠씨10, 인크 | 전자, 광학, 및/또는 기계 장치 및 시스템, 그리고 이를 제조하기 위한 방법 |
EP2713863B1 (en) | 2011-06-03 | 2020-01-15 | The Board of Trustees of the University of Illionis | Conformable actively multiplexed high-density surface electrode array for brain interfacing |
US8934259B2 (en) | 2011-06-08 | 2015-01-13 | Semprius, Inc. | Substrates with transferable chiplets |
US9977188B2 (en) | 2011-08-30 | 2018-05-22 | Skorpios Technologies, Inc. | Integrated photonics mode expander |
US9412727B2 (en) | 2011-09-20 | 2016-08-09 | Semprius, Inc. | Printing transferable components using microstructured elastomeric surfaces with pressure modulated reversible adhesion |
US10038113B1 (en) | 2011-09-22 | 2018-07-31 | National Technology & Engineering Solutions Of Sandia, Llc | Moldable photovoltaic solar cell module |
TWI442587B (zh) * | 2011-11-11 | 2014-06-21 | Hon Hai Prec Ind Co Ltd | 外殼面板及使用該外殼面板的電子設備 |
US8794501B2 (en) | 2011-11-18 | 2014-08-05 | LuxVue Technology Corporation | Method of transferring a light emitting diode |
US8518204B2 (en) | 2011-11-18 | 2013-08-27 | LuxVue Technology Corporation | Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer |
US8349116B1 (en) | 2011-11-18 | 2013-01-08 | LuxVue Technology Corporation | Micro device transfer head heater assembly and method of transferring a micro device |
US9620478B2 (en) | 2011-11-18 | 2017-04-11 | Apple Inc. | Method of fabricating a micro device transfer head |
US8573469B2 (en) | 2011-11-18 | 2013-11-05 | LuxVue Technology Corporation | Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer |
US8912020B2 (en) | 2011-11-23 | 2014-12-16 | International Business Machines Corporation | Integrating active matrix inorganic light emitting diodes for display devices |
KR101979354B1 (ko) | 2011-12-01 | 2019-08-29 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 프로그램 변형을 실행하도록 설계된 과도 장치 |
CN104205348B (zh) * | 2011-12-09 | 2017-05-31 | 森普留斯公司 | 高浓度光电模块及其制造方法 |
US8736008B2 (en) | 2012-01-04 | 2014-05-27 | General Electric Company | Photodiode array and methods of fabrication |
US8896010B2 (en) | 2012-01-24 | 2014-11-25 | Cooledge Lighting Inc. | Wafer-level flip chip device packages and related methods |
WO2013112435A1 (en) | 2012-01-24 | 2013-08-01 | Cooledge Lighting Inc. | Light - emitting devices having discrete phosphor chips and fabrication methods |
US8907362B2 (en) | 2012-01-24 | 2014-12-09 | Cooledge Lighting Inc. | Light-emitting dies incorporating wavelength-conversion materials and related methods |
US9773750B2 (en) | 2012-02-09 | 2017-09-26 | Apple Inc. | Method of transferring and bonding an array of micro devices |
US8456969B1 (en) | 2012-03-27 | 2013-06-04 | Seagate Technology Llc | Laser integrated recording head for heat assisted magnetic recording |
CN105283122B (zh) | 2012-03-30 | 2020-02-18 | 伊利诺伊大学评议会 | 可共形于表面的可安装于附肢的电子器件 |
US9548332B2 (en) | 2012-04-27 | 2017-01-17 | Apple Inc. | Method of forming a micro LED device with self-aligned metallization stack |
US9105492B2 (en) | 2012-05-08 | 2015-08-11 | LuxVue Technology Corporation | Compliant micro device transfer head |
US8415771B1 (en) | 2012-05-25 | 2013-04-09 | LuxVue Technology Corporation | Micro device transfer head with silicon electrode |
US9034754B2 (en) | 2012-05-25 | 2015-05-19 | LuxVue Technology Corporation | Method of forming a micro device transfer head with silicon electrode |
US8900911B2 (en) | 2012-05-29 | 2014-12-02 | Essence Solar Solutions Ltd. | Frame holder |
US8415768B1 (en) | 2012-07-06 | 2013-04-09 | LuxVue Technology Corporation | Compliant monopolar micro device transfer head with silicon electrode |
US8415767B1 (en) | 2012-07-06 | 2013-04-09 | LuxVue Technology Corporation | Compliant bipolar micro device transfer head with silicon electrodes |
US8569115B1 (en) | 2012-07-06 | 2013-10-29 | LuxVue Technology Corporation | Method of forming a compliant bipolar micro device transfer head with silicon electrodes |
US8383506B1 (en) | 2012-07-06 | 2013-02-26 | LuxVue Technology Corporation | Method of forming a compliant monopolar micro device transfer head with silicon electrode |
US8933433B2 (en) | 2012-07-30 | 2015-01-13 | LuxVue Technology Corporation | Method and structure for receiving a micro device |
US20140048128A1 (en) * | 2012-08-16 | 2014-02-20 | Semprius, Inc. | Surface mountable solar receiver with integrated through substrate interconnect and optical element cradle |
KR101922118B1 (ko) * | 2012-08-27 | 2018-11-26 | 삼성전자주식회사 | 플렉서블 반도체소자 및 그 제조방법 |
US20140065359A1 (en) * | 2012-08-30 | 2014-03-06 | Jawaharial Nehru Centre for Advanced Scientific Researc | Graphene ribbons and methods for their preparation and use |
US8791530B2 (en) | 2012-09-06 | 2014-07-29 | LuxVue Technology Corporation | Compliant micro device transfer head with integrated electrode leads |
US9162880B2 (en) | 2012-09-07 | 2015-10-20 | LuxVue Technology Corporation | Mass transfer tool |
US8941215B2 (en) | 2012-09-24 | 2015-01-27 | LuxVue Technology Corporation | Micro device stabilization post |
US8835940B2 (en) | 2012-09-24 | 2014-09-16 | LuxVue Technology Corporation | Micro device stabilization post |
US9171794B2 (en) | 2012-10-09 | 2015-10-27 | Mc10, Inc. | Embedding thin chips in polymer |
US9558721B2 (en) | 2012-10-15 | 2017-01-31 | Apple Inc. | Content-based adaptive refresh schemes for low-power displays |
TWI485452B (zh) * | 2012-10-31 | 2015-05-21 | Compal Electronics Inc | 複合導光板的製造方法 |
CN108447855B (zh) | 2012-11-12 | 2020-11-24 | 晶元光电股份有限公司 | 半导体光电元件的制作方法 |
KR101402228B1 (ko) * | 2012-11-19 | 2014-06-20 | 한국기계연구원 | 금속 메쉬 전극 및 이를 포함하는 태양전지 |
KR101968637B1 (ko) * | 2012-12-07 | 2019-04-12 | 삼성전자주식회사 | 유연성 반도체소자 및 그 제조방법 |
US9255001B2 (en) | 2012-12-10 | 2016-02-09 | LuxVue Technology Corporation | Micro device transfer head array with metal electrodes |
US9029880B2 (en) | 2012-12-10 | 2015-05-12 | LuxVue Technology Corporation | Active matrix display panel with ground tie lines |
US9178123B2 (en) | 2012-12-10 | 2015-11-03 | LuxVue Technology Corporation | Light emitting device reflective bank structure |
US9236815B2 (en) | 2012-12-10 | 2016-01-12 | LuxVue Technology Corporation | Compliant micro device transfer head array with metal electrodes |
US9159700B2 (en) | 2012-12-10 | 2015-10-13 | LuxVue Technology Corporation | Active matrix emissive micro LED display |
US9166114B2 (en) * | 2012-12-11 | 2015-10-20 | LuxVue Technology Corporation | Stabilization structure including sacrificial release layer and staging cavity |
US9105714B2 (en) * | 2012-12-11 | 2015-08-11 | LuxVue Technology Corporation | Stabilization structure including sacrificial release layer and staging bollards |
US9391042B2 (en) | 2012-12-14 | 2016-07-12 | Apple Inc. | Micro device transfer system with pivot mount |
US9314930B2 (en) | 2012-12-14 | 2016-04-19 | LuxVue Technology Corporation | Micro pick up array with integrated pivot mount |
US9153171B2 (en) | 2012-12-17 | 2015-10-06 | LuxVue Technology Corporation | Smart pixel lighting and display microcontroller |
US11673155B2 (en) | 2012-12-27 | 2023-06-13 | Kateeva, Inc. | Techniques for arrayed printing of a permanent layer with improved speed and accuracy |
CN105073434B (zh) | 2012-12-27 | 2017-12-26 | 科迪华公司 | 用于打印油墨体积控制以在精确公差内沉积流体的方法和*** |
US10840536B2 (en) | 2013-02-06 | 2020-11-17 | The Board Of Trustees Of The University Of Illinois | Stretchable electronic systems with containment chambers |
US9613911B2 (en) | 2013-02-06 | 2017-04-04 | The Board Of Trustees Of The University Of Illinois | Self-similar and fractal design for stretchable electronics |
US10497633B2 (en) | 2013-02-06 | 2019-12-03 | The Board Of Trustees Of The University Of Illinois | Stretchable electronic systems with fluid containment |
WO2014126927A1 (en) | 2013-02-13 | 2014-08-21 | The Board Of Trustees Of The University Of Illinois | Injectable and implantable cellular-scale electronic devices |
US9308649B2 (en) | 2013-02-25 | 2016-04-12 | LuxVue Techonology Corporation | Mass transfer tool manipulator assembly |
US9095980B2 (en) | 2013-02-25 | 2015-08-04 | LuxVue Technology Corporation | Micro pick up array mount with integrated displacement sensor |
WO2014138465A1 (en) | 2013-03-08 | 2014-09-12 | The Board Of Trustees Of The University Of Illinois | Processing techniques for silicon-based transient devices |
US8846416B1 (en) * | 2013-03-13 | 2014-09-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming biochips and biochips with non-organic landings for improved thermal budget |
EP2967454B1 (en) | 2013-03-14 | 2020-04-22 | Profusa, Inc. | Method and device for correcting optical signals |
US8791474B1 (en) | 2013-03-15 | 2014-07-29 | LuxVue Technology Corporation | Light emitting diode display with redundancy scheme |
US9252375B2 (en) | 2013-03-15 | 2016-02-02 | LuxVue Technology Corporation | Method of fabricating a light emitting diode display with integrated defect detection test |
WO2014165686A2 (en) | 2013-04-04 | 2014-10-09 | The Board Of Trustees Of The University Of Illinois | Purification of carbon nanotubes via selective heating |
JP6578562B2 (ja) | 2013-04-12 | 2019-09-25 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | 無機及び有機の過渡電子デバイス |
US10292263B2 (en) | 2013-04-12 | 2019-05-14 | The Board Of Trustees Of The University Of Illinois | Biodegradable materials for multilayer transient printed circuit boards |
US9484504B2 (en) | 2013-05-14 | 2016-11-01 | Apple Inc. | Micro LED with wavelength conversion layer |
US9217541B2 (en) | 2013-05-14 | 2015-12-22 | LuxVue Technology Corporation | Stabilization structure including shear release posts |
US9136161B2 (en) | 2013-06-04 | 2015-09-15 | LuxVue Technology Corporation | Micro pick up array with compliant contact |
US10219729B2 (en) | 2013-06-06 | 2019-03-05 | Profusa, Inc. | Apparatus and methods for detecting optical signals from implanted sensors |
ES2952036T3 (es) | 2013-06-12 | 2023-10-26 | Rohinni Inc | Teclado de retroiluminación con fuentes generadoras de luz depositadas |
US8987765B2 (en) | 2013-06-17 | 2015-03-24 | LuxVue Technology Corporation | Reflective bank structure and method for integrating a light emitting device |
US8928021B1 (en) | 2013-06-18 | 2015-01-06 | LuxVue Technology Corporation | LED light pipe |
US9111464B2 (en) | 2013-06-18 | 2015-08-18 | LuxVue Technology Corporation | LED display with wavelength conversion layer |
US9035279B2 (en) | 2013-07-08 | 2015-05-19 | LuxVue Technology Corporation | Micro device with stabilization post |
EP3022779B1 (en) * | 2013-07-19 | 2020-03-18 | Lumileds Holding B.V. | Pc led with optical element and without substrate carrier |
US9296111B2 (en) | 2013-07-22 | 2016-03-29 | LuxVue Technology Corporation | Micro pick up array alignment encoder |
US9087764B2 (en) | 2013-07-26 | 2015-07-21 | LuxVue Technology Corporation | Adhesive wafer bonding with controlled thickness variation |
US9153548B2 (en) | 2013-09-16 | 2015-10-06 | Lux Vue Technology Corporation | Adhesive wafer bonding with sacrificial spacers for controlled thickness variation |
EP3052017B1 (en) | 2013-10-02 | 2019-12-11 | The Board of Trustees of the University of Illionis | Organ mounted electronics |
US9573516B2 (en) | 2013-11-21 | 2017-02-21 | Ford Global Technologies, Llc | Rear vehicle lighting system |
US9649877B2 (en) | 2013-11-21 | 2017-05-16 | Ford Global Technologies, Llc | Vehicle light system with illuminating wheel assembly |
US9463739B2 (en) | 2013-11-21 | 2016-10-11 | Ford Global Technologies, Llc | Sun visor with photoluminescent structure |
US10064256B2 (en) | 2013-11-21 | 2018-08-28 | Ford Global Technologies, Llc | System and method for remote activation of vehicle lighting |
US9682651B2 (en) | 2013-11-21 | 2017-06-20 | Ford Global Technologies, Llc | Vehicle lighting system with improved substrate |
US9434301B2 (en) | 2013-11-21 | 2016-09-06 | Ford Global Technologies, Llc | Hidden photoluminescent vehicle user interface |
US9586523B2 (en) | 2013-11-21 | 2017-03-07 | Ford Global Technologies, Llc | Vehicle lighting assembly |
US9688192B2 (en) | 2013-11-21 | 2017-06-27 | Ford Global Technologies, Llc | Vehicle having interior and exterior lighting on tailgate |
US9446709B2 (en) | 2013-11-21 | 2016-09-20 | Ford Global Technologies, Llc | Vehicle backlit assembly with photoluminescent structure |
US9393905B2 (en) | 2013-11-21 | 2016-07-19 | Ford Global Technologies, Llc | Photoluminescent vehicle compartment light |
US10041650B2 (en) | 2013-11-21 | 2018-08-07 | Ford Global Technologies, Llc | Illuminated instrument panel storage compartment |
US9961745B2 (en) | 2013-11-21 | 2018-05-01 | Ford Global Technologies, Llc | Printed LED rylene dye welcome/farewell lighting |
US9839098B2 (en) | 2013-11-21 | 2017-12-05 | Ford Global Technologies, Llc | Light assembly operable as a dome lamp |
US9464887B2 (en) | 2013-11-21 | 2016-10-11 | Ford Global Technologies, Llc | Illuminated hitch angle detection component |
US9464803B2 (en) | 2013-11-21 | 2016-10-11 | Ford Global Technologies, Llc | Illuminated speaker |
US9905743B2 (en) | 2013-11-21 | 2018-02-27 | Ford Global Technologies, Llc | Printed LED heat sink double lock |
US9434304B2 (en) | 2013-11-21 | 2016-09-06 | Ford Global Technologies, Llc | Illuminated vehicle compartment |
US9682649B2 (en) | 2013-11-21 | 2017-06-20 | Ford Global Technologies, Inc. | Photoluminescent winch apparatus |
US9539939B2 (en) | 2013-11-21 | 2017-01-10 | Ford Global Technologies, Llc | Photoluminescent logo for vehicle trim and fabric |
US9782504B2 (en) | 2013-11-21 | 2017-10-10 | Ford Global Technologies, Inc. | Self-disinfecting surface with printed LEDs for a surface of a vehicle |
US9481297B2 (en) | 2013-11-21 | 2016-11-01 | Ford Global Technologies, Llc | Illuminated steering assembly |
US9393904B2 (en) | 2013-11-21 | 2016-07-19 | Ford Global Technologies, Llc | Photoluminescent engine compartment lighting |
US9533613B2 (en) | 2013-11-21 | 2017-01-03 | Ford Global Technologies, Llc | Photoluminescent fuel filler door |
US9495040B2 (en) | 2013-11-21 | 2016-11-15 | Ford Global Technologies, Llc | Selectively visible user interface |
US9849831B2 (en) | 2013-11-21 | 2017-12-26 | Ford Global Technologies, Llc | Printed LED storage compartment |
US9969323B2 (en) | 2013-11-21 | 2018-05-15 | Ford Global Technologies, Llc | Vehicle lighting system employing a light strip |
US9989216B2 (en) | 2013-11-21 | 2018-06-05 | Ford Global Technologies, Llc | Interior exterior moving designs |
US9469244B2 (en) | 2013-11-21 | 2016-10-18 | Ford Global Technologies, Llc | Luminescent vehicle seal |
US9434302B2 (en) | 2013-11-21 | 2016-09-06 | Ford Global Technologies,Llc | Photoluminescent bin lamp |
US9499090B2 (en) | 2013-11-21 | 2016-11-22 | Ford Global Technologies, Llc | Spoiler using photoluminescent illumination |
US9463736B2 (en) | 2013-11-21 | 2016-10-11 | Ford Global Technologies, Llc | Illuminated steering assembly |
US9487136B2 (en) | 2013-11-21 | 2016-11-08 | Ford Global Technologies, Llc | System and method to locate vehicle equipment |
US9434297B2 (en) | 2013-11-21 | 2016-09-06 | Ford Global Technologies, Llc | Photoluminescent vehicle graphics |
US9399427B2 (en) | 2013-11-21 | 2016-07-26 | Ford Global Technologies, Llc | Photoluminescent device holder |
US9487127B2 (en) | 2013-11-21 | 2016-11-08 | Ford Global Technologies, Llc | Photoluminescent vehicle step lamp |
US9583968B2 (en) | 2013-11-21 | 2017-02-28 | Ford Global Technologies, Llc | Photoluminescent disinfecting and charging bin |
US9527438B2 (en) | 2013-11-21 | 2016-12-27 | Ford Global Technologies, Llc | Photoluminescent blind spot warning indicator |
US9463737B2 (en) | 2013-11-21 | 2016-10-11 | Ford Global Technologies, Llc | Illuminated seatbelt assembly |
US9499113B2 (en) | 2013-11-21 | 2016-11-22 | Ford Global Technologies, Llc | Luminescent grille bar assembly |
US9463738B2 (en) | 2013-11-21 | 2016-10-11 | Ford Global Technologies, Llc | Seatbelt lighting system |
US9586518B2 (en) | 2013-11-21 | 2017-03-07 | Ford Global Technologies, Llc | Luminescent grille bar assembly |
US9796304B2 (en) | 2013-11-21 | 2017-10-24 | Ford Global Technologies, Llc | Vehicle floor lighting system having a pivotable base with light-producing assembly coupled to base |
US9464886B2 (en) | 2013-11-21 | 2016-10-11 | Ford Global Technologies, Llc | Luminescent hitch angle detection component |
US9487128B2 (en) | 2013-11-21 | 2016-11-08 | Ford Global Technologies, Llc | Illuminating running board |
US9539941B2 (en) | 2013-11-21 | 2017-01-10 | Ford Global Technologies, Llc | Photoluminescent cupholder illumination |
US9902320B2 (en) | 2013-11-21 | 2018-02-27 | Ford Global Technologies, Llc | Photoluminescent color changing dome map lamp |
US9950658B2 (en) | 2013-11-21 | 2018-04-24 | Ford Global Technologies, Llc | Privacy window system |
US9440583B2 (en) | 2013-11-21 | 2016-09-13 | Ford Global Technologies, Llc | Vehicle dome lighting system with photoluminescent structure |
US9371033B2 (en) | 2013-11-21 | 2016-06-21 | Ford Global Technologies, Llc | Vehicle sunshade assembly |
US10363867B2 (en) | 2013-11-21 | 2019-07-30 | Ford Global Technologies, Llc | Printed LED trim panel lamp |
US9764686B2 (en) | 2013-11-21 | 2017-09-19 | Ford Global Technologies, Llc | Light-producing assembly for a vehicle |
US9821708B2 (en) | 2013-11-21 | 2017-11-21 | Ford Global Technologies, Llc | Illuminated exterior strip |
US9499092B2 (en) | 2013-11-21 | 2016-11-22 | Ford Global Technologies, Llc | Illuminating molding for a vehicle |
US9440579B2 (en) | 2013-11-21 | 2016-09-13 | Ford Global Technologies, Llc | Photoluminescent step handle |
US9452708B2 (en) | 2013-11-21 | 2016-09-27 | Ford Global Technologies, Llc | Vehicle badge |
US9492575B2 (en) | 2013-11-21 | 2016-11-15 | Ford Global Technologies, Llc | Color changing and disinfecting surfaces |
US9868387B2 (en) | 2013-11-21 | 2018-01-16 | Ford Global Technologies, Llc | Photoluminescent printed LED molding |
US9463734B2 (en) | 2013-11-21 | 2016-10-11 | Ford Global Technologies, Llc | Illuminated seatbelt assembly |
US9688186B2 (en) | 2013-11-21 | 2017-06-27 | Ford Global Technologies, Llc | Illuminating decal for a vehicle |
US9587800B2 (en) | 2013-11-21 | 2017-03-07 | Ford Global Technologies, Llc | Luminescent vehicle molding |
US9499096B2 (en) | 2013-11-21 | 2016-11-22 | Ford Global Technologies, Llc | Photoluminescent vehicle reading lamp |
US9598632B2 (en) | 2013-11-21 | 2017-03-21 | Ford Global Technologies, Llc | Method for depositing photoluminescent material |
US9493113B2 (en) | 2013-11-21 | 2016-11-15 | Ford Global Technologies, Llc | Photoluminescent cargo area illumination |
US9539940B2 (en) | 2013-11-21 | 2017-01-10 | Ford Global Technologies, Llc | Illuminated indicator |
US9789810B2 (en) | 2013-11-21 | 2017-10-17 | Ford Global Technologies, Llc | Photoluminescent vehicle panel |
US9457712B2 (en) | 2013-11-21 | 2016-10-04 | Ford Global Technologies, Llc | Vehicle sun visor providing luminescent lighting |
US9387802B2 (en) | 2013-11-21 | 2016-07-12 | Ford Global Technologies, Llc | Photoluminescent power distribution box |
US9810401B2 (en) | 2013-11-21 | 2017-11-07 | Ford Global Technologies, Llc | Luminescent trim light assembly |
US9464776B2 (en) | 2013-11-21 | 2016-10-11 | Ford Global Technologies, Llc | Vehicle light system with illuminating exhaust |
US9487135B2 (en) | 2013-11-21 | 2016-11-08 | Ford Global Technologies, Llc | Dome light assembly |
US9931991B2 (en) | 2013-11-21 | 2018-04-03 | Ford Global Technologies, Llc | Rotating garment hook |
US9771019B2 (en) | 2013-11-21 | 2017-09-26 | Ford Global Technologies, Inc. | Photoluminescent vehicle illumination |
US9796325B2 (en) | 2013-11-21 | 2017-10-24 | Ford Global Technologies, Llc | Exterior light system for a vehicle |
US9625115B2 (en) | 2013-11-21 | 2017-04-18 | Ford Global Technologies, Llc | Photoluminescent vehicle graphics |
US9538874B2 (en) | 2013-11-21 | 2017-01-10 | Ford Global Technologies, Llc | Photoluminescent cupholder illumination |
US9434294B2 (en) | 2013-11-21 | 2016-09-06 | Ford Global Technologies, Llc | Photoluminescent vehicle badge |
US9694743B2 (en) | 2013-11-21 | 2017-07-04 | Ford Global Technologies, Llc | Dual purpose lighting assembly |
US9440584B2 (en) | 2013-11-21 | 2016-09-13 | Ford Global Technologies, Llc | Photoluminescent vehicle console |
US9459453B2 (en) | 2013-11-21 | 2016-10-04 | Ford Global Technologies, Llc | Windshield display system |
US9797575B2 (en) | 2013-11-21 | 2017-10-24 | Ford Global Technologies, Llc | Light-producing assembly for a vehicle |
US9809160B2 (en) | 2013-11-21 | 2017-11-07 | Ford Global Technologies, Llc | Tailgate illumination system |
US9573517B2 (en) | 2013-11-21 | 2017-02-21 | Ford Global Technologies, Llc | Door illumination and warning system |
US9393903B2 (en) | 2013-11-21 | 2016-07-19 | Ford Global Technologies, Llc | Photoluminescent engine compartment lighting |
US9487126B2 (en) | 2013-11-21 | 2016-11-08 | Ford Global Technologies, Llc | Photoluminescent puddle lamp |
US9613549B2 (en) | 2013-11-21 | 2017-04-04 | Ford Global Technologies, Llc | Illuminating badge for a vehicle |
US10400978B2 (en) | 2013-11-21 | 2019-09-03 | Ford Global Technologies, Llc | Photoluminescent lighting apparatus for vehicles |
US10101529B2 (en) * | 2013-12-11 | 2018-10-16 | Empire Technology Development Llc | Preparation and usage of optical waveguides |
CN107825886B (zh) | 2013-12-12 | 2020-04-14 | 科迪华公司 | 制造电子设备的方法 |
US9367094B2 (en) | 2013-12-17 | 2016-06-14 | Apple Inc. | Display module and system applications |
US9768345B2 (en) | 2013-12-20 | 2017-09-19 | Apple Inc. | LED with current injection confinement trench |
US9450147B2 (en) | 2013-12-27 | 2016-09-20 | Apple Inc. | LED with internally confined current injection area |
US9583466B2 (en) | 2013-12-27 | 2017-02-28 | Apple Inc. | Etch removal of current distribution layer for LED current confinement |
US10120266B2 (en) | 2014-01-06 | 2018-11-06 | Lumileds Llc | Thin LED flash for camera |
EP3095137A2 (en) * | 2014-01-15 | 2016-11-23 | The Regents Of The University Of Michigan | Integration of epitaxial lift-off solar cells with mini-parabolic concentrator arrays via printing method |
WO2015119858A1 (en) | 2014-02-05 | 2015-08-13 | Cooledge Lighting Inc. | Light-emitting dies incorporating wavelength-conversion materials and related methods |
US9542638B2 (en) | 2014-02-18 | 2017-01-10 | Apple Inc. | RFID tag and micro chip integration design |
JP6466070B2 (ja) | 2014-03-05 | 2019-02-06 | 株式会社東芝 | 透明導電体およびこれを用いたデバイス |
US9664855B2 (en) | 2014-03-07 | 2017-05-30 | Skorpios Technologies, Inc. | Wide shoulder, high order mode filter for thick-silicon waveguides |
US9583533B2 (en) | 2014-03-13 | 2017-02-28 | Apple Inc. | LED device with embedded nanowire LEDs |
DE102014104240A1 (de) * | 2014-03-26 | 2015-10-01 | Sick Ag | Optischer Sensor |
US10141465B2 (en) | 2014-04-04 | 2018-11-27 | The Regents Of The University Of Michigan | Epitaxial lift-off processed GaAs thin-film solar cells integrated with non-tracking mini-compound parabolic concentrators |
US10003173B2 (en) | 2014-04-23 | 2018-06-19 | Skorpios Technologies, Inc. | Widely tunable laser control |
US9522468B2 (en) | 2014-05-08 | 2016-12-20 | Apple Inc. | Mass transfer tool manipulator assembly with remote center of compliance |
US9318475B2 (en) | 2014-05-15 | 2016-04-19 | LuxVue Technology Corporation | Flexible display and method of formation with sacrificial release layer |
US9202953B1 (en) * | 2014-05-16 | 2015-12-01 | National Cheng Kung University | Method for manufacturing solar cell with nano-structural film |
WO2015183992A1 (en) | 2014-05-27 | 2015-12-03 | Skorpios Technologies, Inc. | Waveguide mode expander using amorphous silicon |
US9741286B2 (en) | 2014-06-03 | 2017-08-22 | Apple Inc. | Interactive display panel with emitting and sensing diodes |
US9624100B2 (en) | 2014-06-12 | 2017-04-18 | Apple Inc. | Micro pick up array pivot mount with integrated strain sensing elements |
US9570002B2 (en) | 2014-06-17 | 2017-02-14 | Apple Inc. | Interactive display panel with IR diodes |
US9425151B2 (en) | 2014-06-17 | 2016-08-23 | Apple Inc. | Compliant electrostatic transfer head with spring support layer |
CN107078094B (zh) | 2014-06-18 | 2020-04-03 | 艾克斯瑟乐普林特有限公司 | 用于制备用于微组装的GaN及相关材料的***及方法 |
TWI677963B (zh) | 2014-06-18 | 2019-11-21 | 愛爾蘭商艾克斯瑟樂普林特有限公司 | 微組裝高頻裝置及陣列 |
US9929053B2 (en) | 2014-06-18 | 2018-03-27 | X-Celeprint Limited | Systems and methods for controlling release of transferable semiconductor structures |
CN111180381B (zh) | 2014-06-18 | 2021-08-27 | 艾克斯展示公司技术有限公司 | 用于控制可转印半导体结构的释放的***及方法 |
US9865600B2 (en) | 2014-06-18 | 2018-01-09 | X-Celeprint Limited | Printed capacitors |
US9991423B2 (en) | 2014-06-18 | 2018-06-05 | X-Celeprint Limited | Micro assembled LED displays and lighting elements |
CN104062765B (zh) * | 2014-07-11 | 2016-11-23 | 张家港康得新光电材料有限公司 | 2d与3d影像切换显示设备和柱状透镜元件 |
MY182253A (en) | 2014-07-20 | 2021-01-18 | X Celeprint Ltd | Apparatus and methods for micro-transfer-printing |
US10252463B2 (en) | 2014-07-22 | 2019-04-09 | Nabil A. Amro | Compact instrument with exchangeable modules for multiple microfabrication and/or nanofabrication methods |
WO2016025468A2 (en) | 2014-08-11 | 2016-02-18 | The Board Of Trustees Of The University Of Illinois | Devices and related methods for epidermal characterization of biofluids |
KR20170041872A (ko) | 2014-08-11 | 2017-04-17 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 온도 및 열 전달 특성분석을 위한 표피 장치 |
US10736551B2 (en) | 2014-08-11 | 2020-08-11 | The Board Of Trustees Of The University Of Illinois | Epidermal photonic systems and methods |
KR20170047324A (ko) | 2014-08-26 | 2017-05-04 | 엑스-셀레프린트 리미티드 | 마이크로 어셈블링된 하이브리드 디스플레이들 및 조명 엘리먼트들 |
US9799261B2 (en) | 2014-09-25 | 2017-10-24 | X-Celeprint Limited | Self-compensating circuit for faulty display pixels |
US9818725B2 (en) | 2015-06-01 | 2017-11-14 | X-Celeprint Limited | Inorganic-light-emitter display with integrated black matrix |
US9468050B1 (en) | 2014-09-25 | 2016-10-11 | X-Celeprint Limited | Self-compensating circuit for faulty display pixels |
US9991163B2 (en) | 2014-09-25 | 2018-06-05 | X-Celeprint Limited | Small-aperture-ratio display with electrical component |
US9537069B1 (en) | 2014-09-25 | 2017-01-03 | X-Celeprint Limited | Inorganic light-emitting diode with encapsulating reflector |
US9799719B2 (en) | 2014-09-25 | 2017-10-24 | X-Celeprint Limited | Active-matrix touchscreen |
US9705432B2 (en) | 2014-09-30 | 2017-07-11 | Apple Inc. | Micro pick up array pivot mount design for strain amplification |
US9828244B2 (en) | 2014-09-30 | 2017-11-28 | Apple Inc. | Compliant electrostatic transfer head with defined cavity |
US9530921B2 (en) * | 2014-10-02 | 2016-12-27 | International Business Machines Corporation | Multi-junction solar cell |
CN107078085B (zh) | 2014-10-28 | 2020-12-08 | 美国亚德诺半导体公司 | 转移打印方法 |
US10538028B2 (en) | 2014-11-17 | 2020-01-21 | The Board Of Trustees Of The University Of Illinois | Deterministic assembly of complex, three-dimensional architectures by compressive buckling |
US9607638B1 (en) | 2014-11-19 | 2017-03-28 | Seagate Technology Llc | Recording head with an on-wafer integrated laser |
US9576595B1 (en) | 2014-11-19 | 2017-02-21 | Seagate Technology Llc | Transfer printing an epitaxial layer to a read/write head to form an integral laser |
US10069029B1 (en) * | 2014-11-19 | 2018-09-04 | Seagate Technology Llc | Transfer-printed photonics |
US10984821B1 (en) | 2014-11-19 | 2021-04-20 | Seagate Technology Llc | Transfer-printed near-field transducer and heat sink |
US9478583B2 (en) | 2014-12-08 | 2016-10-25 | Apple Inc. | Wearable display having an array of LEDs on a conformable silicon substrate |
KR102340855B1 (ko) * | 2015-01-15 | 2021-12-17 | 삼성디스플레이 주식회사 | 신축성 표시 장치 |
CN107851586B (zh) * | 2015-01-23 | 2021-07-06 | 维耶尔公司 | 到受体衬底的选择性微型器件转移 |
US10477354B2 (en) | 2015-02-20 | 2019-11-12 | Mc10, Inc. | Automated detection and configuration of wearable devices based on on-body status, location, and/or orientation |
CN107624197A (zh) | 2015-03-18 | 2018-01-23 | 密歇根大学董事会 | 通过预图案化台面进行的减轻应变的外延剥离 |
US9484332B2 (en) * | 2015-03-18 | 2016-11-01 | Intel Corporation | Micro solar cell powered micro LED display |
US9559245B2 (en) * | 2015-03-23 | 2017-01-31 | Sunpower Corporation | Blister-free polycrystalline silicon for solar cells |
EP3286587A4 (en) | 2015-04-20 | 2018-12-26 | Skorpios Technologies, Inc. | Vertical output couplers for photonic devices |
US9467190B1 (en) | 2015-04-23 | 2016-10-11 | Connor Sport Court International, Llc | Mobile electronic device covering |
US9640715B2 (en) | 2015-05-15 | 2017-05-02 | X-Celeprint Limited | Printable inorganic semiconductor structures |
KR20180034342A (ko) | 2015-06-01 | 2018-04-04 | 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 | 대안적인 자외선 감지방법 |
BR112017025609A2 (pt) | 2015-06-01 | 2018-08-07 | The Board Of Trustees Of The University Of Illinois | sistemas eletrônicos miniaturizados com potência sem fio e capacidades de comunicação de campo próximo |
US10729912B2 (en) * | 2015-06-05 | 2020-08-04 | Gwangju Institute Of Science And Technology | Insertable photoelectric device using absorption of light penetrating skin and electronic apparatus having same photoelectric device |
US9871345B2 (en) | 2015-06-09 | 2018-01-16 | X-Celeprint Limited | Crystalline color-conversion device |
US10102794B2 (en) | 2015-06-09 | 2018-10-16 | X-Celeprint Limited | Distributed charge-pump power-supply system |
US10133426B2 (en) | 2015-06-18 | 2018-11-20 | X-Celeprint Limited | Display with micro-LED front light |
US11061276B2 (en) | 2015-06-18 | 2021-07-13 | X Display Company Technology Limited | Laser array display |
US11160489B2 (en) | 2015-07-02 | 2021-11-02 | The Board Of Trustees Of The University Of Illinois | Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics |
US9704821B2 (en) | 2015-08-11 | 2017-07-11 | X-Celeprint Limited | Stamp with structured posts |
US10255834B2 (en) | 2015-07-23 | 2019-04-09 | X-Celeprint Limited | Parallel redundant chiplet system for controlling display pixels |
US9969078B2 (en) * | 2015-08-03 | 2018-05-15 | Mikro Mesa Technology Co., Ltd. | Transfer head array and transferring method |
US10373856B2 (en) | 2015-08-03 | 2019-08-06 | Mikro Mesa Technology Co., Ltd. | Transfer head array |
US10468363B2 (en) | 2015-08-10 | 2019-11-05 | X-Celeprint Limited | Chiplets with connection posts |
US10168039B2 (en) | 2015-08-10 | 2019-01-01 | Ford Global Technologies, Llc | Illuminated badge for a vehicle |
US9640108B2 (en) | 2015-08-25 | 2017-05-02 | X-Celeprint Limited | Bit-plane pulse width modulated digital display system |
US10380930B2 (en) | 2015-08-24 | 2019-08-13 | X-Celeprint Limited | Heterogeneous light emitter display system |
US10600823B2 (en) | 2015-09-02 | 2020-03-24 | Facebook Technologies, Llc | Assembly of semiconductor devices |
GB2541970B (en) | 2015-09-02 | 2020-08-19 | Facebook Tech Llc | Display manufacture |
GB2544728B (en) | 2015-11-17 | 2020-08-19 | Facebook Tech Llc | Redundancy in inorganic light emitting diode displays |
GB2545155B (en) * | 2015-09-02 | 2020-04-01 | Facebook Tech Llc | Assembly of semiconductor devices |
GB2549734B (en) | 2016-04-26 | 2020-01-01 | Facebook Tech Llc | A display |
US10177127B2 (en) | 2015-09-04 | 2019-01-08 | Hong Kong Beida Jade Bird Display Limited | Semiconductor apparatus and method of manufacturing the same |
US10032757B2 (en) | 2015-09-04 | 2018-07-24 | Hong Kong Beida Jade Bird Display Limited | Projection display system |
US10304811B2 (en) | 2015-09-04 | 2019-05-28 | Hong Kong Beida Jade Bird Display Limited | Light-emitting diode display panel with micro lens array |
US9663967B2 (en) | 2015-09-11 | 2017-05-30 | Ford Global Technologies, Llc | Illuminated latch system |
US9899556B2 (en) | 2015-09-14 | 2018-02-20 | Wisconsin Alumni Research Foundation | Hybrid tandem solar cells with improved tunnel junction structures |
US10230048B2 (en) | 2015-09-29 | 2019-03-12 | X-Celeprint Limited | OLEDs for micro transfer printing |
WO2017105581A2 (en) | 2015-10-02 | 2017-06-22 | Semprius, Inc. | Wafer-integrated, ultra-low profile concentrated photovoltaics (cpv) for space applications |
US9463735B1 (en) | 2015-10-06 | 2016-10-11 | Ford Global Technologies, Llc | Vehicle visor assembly with illuminating check assembly |
US9653640B2 (en) | 2015-10-09 | 2017-05-16 | Wisconsin Alumni Research Foundation | Metal-oxide-semiconductor field-effect phototransistors based on single crystalline semiconductor thin films |
TWI581355B (zh) | 2015-11-06 | 2017-05-01 | 友達光電股份有限公司 | 轉置微元件的方法 |
US9694739B2 (en) | 2015-11-10 | 2017-07-04 | Ford Global Technologies, Llc | Disinfecting handle |
US10925543B2 (en) | 2015-11-11 | 2021-02-23 | The Board Of Trustees Of The University Of Illinois | Bioresorbable silicon electronics for transient implants |
US9889791B2 (en) | 2015-12-01 | 2018-02-13 | Ford Global Technologies, Llc | Illuminated badge for a vehicle |
US10418933B2 (en) | 2015-12-08 | 2019-09-17 | Alta Devices, Inc. | Versatile flexible circuit interconnection for flexible solar cells |
US10066819B2 (en) | 2015-12-09 | 2018-09-04 | X-Celeprint Limited | Micro-light-emitting diode backlight system |
CN105428443A (zh) * | 2015-12-11 | 2016-03-23 | 中国电子科技集团公司第十八研究所 | 一种柔性聚光太阳电池 |
US10023100B2 (en) | 2015-12-14 | 2018-07-17 | Ford Global Technologies, Llc | Illuminated trim assembly |
US9500333B1 (en) | 2015-12-18 | 2016-11-22 | Ford Global Technologies, Llc | Phosphorescent lighting assembly |
US9930277B2 (en) | 2015-12-23 | 2018-03-27 | X-Celeprint Limited | Serial row-select matrix-addressed system |
US9786646B2 (en) | 2015-12-23 | 2017-10-10 | X-Celeprint Limited | Matrix addressed device repair |
US10091446B2 (en) | 2015-12-23 | 2018-10-02 | X-Celeprint Limited | Active-matrix displays with common pixel control |
US9928771B2 (en) | 2015-12-24 | 2018-03-27 | X-Celeprint Limited | Distributed pulse width modulation control |
US9855799B2 (en) | 2016-02-09 | 2018-01-02 | Ford Global Technologies, Llc | Fuel level indicator |
US10501007B2 (en) | 2016-01-12 | 2019-12-10 | Ford Global Technologies, Llc | Fuel port illumination device |
US10235911B2 (en) | 2016-01-12 | 2019-03-19 | Ford Global Technologies, Llc | Illuminating badge for a vehicle |
US10300843B2 (en) | 2016-01-12 | 2019-05-28 | Ford Global Technologies, Llc | Vehicle illumination assembly |
WO2017124109A1 (en) | 2016-01-15 | 2017-07-20 | Rohinni, LLC | Apparatus and method of backlighting through a cover on the apparatus |
US10011219B2 (en) | 2016-01-18 | 2018-07-03 | Ford Global Technologies, Llc | Illuminated badge |
US9927114B2 (en) | 2016-01-21 | 2018-03-27 | Ford Global Technologies, Llc | Illumination apparatus utilizing conductive polymers |
US9517723B1 (en) | 2016-01-21 | 2016-12-13 | Ford Global Technologies, Llc | Illuminated tie-down cleat |
US10090420B2 (en) | 2016-01-22 | 2018-10-02 | Solar Junction Corporation | Via etch method for back contact multijunction solar cells |
US9586519B1 (en) | 2016-01-27 | 2017-03-07 | Ford Global Technologies, Llc | Vehicle rear illumination |
US9623797B1 (en) | 2016-02-04 | 2017-04-18 | Ford Global Technologies, Llc | Lift gate lamp |
US11230471B2 (en) | 2016-02-05 | 2022-01-25 | X-Celeprint Limited | Micro-transfer-printed compound sensor device |
US9499093B1 (en) | 2016-02-08 | 2016-11-22 | Ford Global Technologies, Llc | Retractable running board with long-persistance phosphor lighting |
US9499094B1 (en) | 2016-02-08 | 2016-11-22 | Ford Global Technologies, Llc | Retractable running board with long-persistence phosphor lighting |
US10189401B2 (en) | 2016-02-09 | 2019-01-29 | Ford Global Technologies, Llc | Vehicle light strip with optical element |
US9664354B1 (en) | 2016-02-11 | 2017-05-30 | Ford Global Technologies, Llc | Illumination assembly |
TWI720124B (zh) * | 2016-02-12 | 2021-03-01 | 光澄科技股份有限公司 | 光學裝置 |
US10200013B2 (en) | 2016-02-18 | 2019-02-05 | X-Celeprint Limited | Micro-transfer-printed acoustic wave filter device |
US10361677B2 (en) | 2016-02-18 | 2019-07-23 | X-Celeprint Limited | Transverse bulk acoustic wave filter |
US10109753B2 (en) | 2016-02-19 | 2018-10-23 | X-Celeprint Limited | Compound micro-transfer-printed optical filter device |
EP3420732B8 (en) | 2016-02-22 | 2020-12-30 | Medidata Solutions, Inc. | System, devices, and method for on-body data and power transmission |
US9656598B1 (en) | 2016-02-23 | 2017-05-23 | Ford Global Technologies, Llc | Vehicle badge |
WO2017144573A1 (en) | 2016-02-25 | 2017-08-31 | X-Celeprint Limited | Efficiently micro-transfer printing micro-scale devices onto large-format substrates |
US9751458B1 (en) | 2016-02-26 | 2017-09-05 | Ford Global Technologies, Llc | Vehicle illumination system |
US10193025B2 (en) | 2016-02-29 | 2019-01-29 | X-Celeprint Limited | Inorganic LED pixel structure |
US10150325B2 (en) | 2016-02-29 | 2018-12-11 | X-Celeprint Limited | Hybrid banknote with electronic indicia |
US10150326B2 (en) | 2016-02-29 | 2018-12-11 | X-Celeprint Limited | Hybrid document with variable state |
US10153257B2 (en) | 2016-03-03 | 2018-12-11 | X-Celeprint Limited | Micro-printed display |
US10153256B2 (en) | 2016-03-03 | 2018-12-11 | X-Celeprint Limited | Micro-transfer printable electronic component |
US10501025B2 (en) | 2016-03-04 | 2019-12-10 | Ford Global Technologies, Llc | Vehicle badge |
US10118568B2 (en) | 2016-03-09 | 2018-11-06 | Ford Global Technologies, Llc | Vehicle badge having discretely illuminated portions |
US9688189B1 (en) | 2016-03-09 | 2017-06-27 | Ford Global Technologies, Llc | Illuminated license plate |
US9688190B1 (en) | 2016-03-15 | 2017-06-27 | Ford Global Technologies, Llc | License plate illumination system |
US10917953B2 (en) | 2016-03-21 | 2021-02-09 | X Display Company Technology Limited | Electrically parallel fused LEDs |
US10223962B2 (en) | 2016-03-21 | 2019-03-05 | X-Celeprint Limited | Display with fused LEDs |
US9963001B2 (en) | 2016-03-24 | 2018-05-08 | Ford Global Technologies, Llc | Vehicle wheel illumination assembly using photoluminescent material |
WO2017173339A1 (en) | 2016-04-01 | 2017-10-05 | The Board Of Trustees Of The University Of Illinois | Implantable medical devices for optogenetics |
US10103069B2 (en) | 2016-04-01 | 2018-10-16 | X-Celeprint Limited | Pressure-activated electrical interconnection by micro-transfer printing |
US10008483B2 (en) | 2016-04-05 | 2018-06-26 | X-Celeprint Limited | Micro-transfer printed LED and color filter structure |
US10199546B2 (en) | 2016-04-05 | 2019-02-05 | X-Celeprint Limited | Color-filter device |
US10081296B2 (en) | 2016-04-06 | 2018-09-25 | Ford Global Technologies, Llc | Illuminated exterior strip with photoluminescent structure and retroreflective layer |
US9997102B2 (en) | 2016-04-19 | 2018-06-12 | X-Celeprint Limited | Wirelessly powered display and system |
US10198890B2 (en) | 2016-04-19 | 2019-02-05 | X-Celeprint Limited | Hybrid banknote with electronic indicia using near-field-communications |
KR102417917B1 (ko) | 2016-04-26 | 2022-07-07 | 삼성전자주식회사 | 공정 시스템 및 그 동작 방법 |
US10360846B2 (en) | 2016-05-10 | 2019-07-23 | X-Celeprint Limited | Distributed pulse-width modulation system with multi-bit digital storage and output device |
US9714749B1 (en) | 2016-05-10 | 2017-07-25 | Ford Global Technologies, Llc | Illuminated vehicle grille assembly |
US9758088B1 (en) | 2016-05-10 | 2017-09-12 | Ford Global Technologies, Llc | Auxiliary lighting roof rack |
US10420189B2 (en) | 2016-05-11 | 2019-09-17 | Ford Global Technologies, Llc | Vehicle lighting assembly |
US10064259B2 (en) | 2016-05-11 | 2018-08-28 | Ford Global Technologies, Llc | Illuminated vehicle badge |
US9738219B1 (en) | 2016-05-11 | 2017-08-22 | Ford Global Technologies, Llc | Illuminated vehicle trim |
US9688215B1 (en) | 2016-05-11 | 2017-06-27 | Ford Global Technologies, Llc | Iridescent vehicle applique |
US10631373B2 (en) | 2016-05-12 | 2020-04-21 | Ford Global Technologies, Llc | Heated windshield indicator |
US9821710B1 (en) | 2016-05-12 | 2017-11-21 | Ford Global Technologies, Llc | Lighting apparatus for vehicle decklid |
US10037985B2 (en) | 2016-05-17 | 2018-07-31 | X-Celeprint Limited | Compound micro-transfer-printed power transistor device |
US10622700B2 (en) | 2016-05-18 | 2020-04-14 | X-Celeprint Limited | Antenna with micro-transfer-printed circuit element |
US9821717B1 (en) | 2016-05-18 | 2017-11-21 | Ford Global Technologies, Llc | Box step with release button that illuminates |
US9586527B1 (en) | 2016-05-18 | 2017-03-07 | Ford Global Technologies, Llc | Wheel well step assembly of vehicle |
US9994144B2 (en) | 2016-05-23 | 2018-06-12 | Ford Global Technologies, Llc | Illuminated automotive glazings |
US9896020B2 (en) | 2016-05-23 | 2018-02-20 | Ford Global Technologies, Llc | Vehicle lighting assembly |
US9925917B2 (en) | 2016-05-26 | 2018-03-27 | Ford Global Technologies, Llc | Concealed lighting for vehicles |
US9680035B1 (en) | 2016-05-27 | 2017-06-13 | Solar Junction Corporation | Surface mount solar cell with integrated coverglass |
US9997501B2 (en) | 2016-06-01 | 2018-06-12 | X-Celeprint Limited | Micro-transfer-printed light-emitting diode device |
US9937855B2 (en) | 2016-06-02 | 2018-04-10 | Ford Global Technologies, Llc | Automotive window glazings |
US10453826B2 (en) | 2016-06-03 | 2019-10-22 | X-Celeprint Limited | Voltage-balanced serial iLED pixel and display |
US9803822B1 (en) | 2016-06-03 | 2017-10-31 | Ford Global Technologies, Llc | Vehicle illumination assembly |
US10343622B2 (en) | 2016-06-09 | 2019-07-09 | Ford Global Technologies, Llc | Interior and exterior iridescent vehicle appliques |
US11137641B2 (en) | 2016-06-10 | 2021-10-05 | X Display Company Technology Limited | LED structure with polarized light emission |
US10205338B2 (en) | 2016-06-13 | 2019-02-12 | Ford Global Technologies, Llc | Illuminated vehicle charging assembly |
US9604567B1 (en) | 2016-06-15 | 2017-03-28 | Ford Global Technologies, Llc | Luminescent trailer hitch plug |
WO2017218878A1 (en) | 2016-06-17 | 2017-12-21 | The Board Of Trustees Of The University Of Illinois | Soft, wearable microfluidic systems capable of capture, storage, and sensing of biofluids |
US10131237B2 (en) | 2016-06-22 | 2018-11-20 | Ford Global Technologies, Llc | Illuminated vehicle charging system |
US9855888B1 (en) | 2016-06-29 | 2018-01-02 | Ford Global Technologies, Llc | Photoluminescent vehicle appliques |
FR3053760B1 (fr) * | 2016-07-05 | 2020-07-17 | Valeo Vision | Source lumineuse et module lumineux correspondant pour vehicule automobile |
US9840191B1 (en) | 2016-07-12 | 2017-12-12 | Ford Global Technologies, Llc | Vehicle lamp assembly |
KR102106977B1 (ko) * | 2016-07-13 | 2020-05-08 | 한국전자통신연구원 | 전자 소자 및 그의 제조 방법 |
US9855797B1 (en) | 2016-07-13 | 2018-01-02 | Ford Global Technologies, Llc | Illuminated system for a vehicle |
US9889801B2 (en) | 2016-07-14 | 2018-02-13 | Ford Global Technologies, Llc | Vehicle lighting assembly |
US9840193B1 (en) | 2016-07-15 | 2017-12-12 | Ford Global Technologies, Llc | Vehicle lighting assembly |
US9573518B1 (en) | 2016-07-15 | 2017-02-21 | Ford Global Technologies, Llc | Floor console IR bin light |
US9604569B1 (en) | 2016-07-19 | 2017-03-28 | Ford Global Technologies, Llc | Window lighting system of a vehicle |
US10222698B2 (en) | 2016-07-28 | 2019-03-05 | X-Celeprint Limited | Chiplets with wicking posts |
US11064609B2 (en) | 2016-08-04 | 2021-07-13 | X Display Company Technology Limited | Printable 3D electronic structure |
US9587967B1 (en) | 2016-08-04 | 2017-03-07 | Ford Global Technologies, Llc | Vehicle container illumination |
US9573519B1 (en) | 2016-08-08 | 2017-02-21 | Ford Global Technologies, Llc | Engine compartment lighting to moving parts |
US9845047B1 (en) | 2016-08-08 | 2017-12-19 | Ford Global Technologies, Llc | Light system |
US9573520B1 (en) | 2016-08-09 | 2017-02-21 | Ford Global Technologies, Llc | Luminescent console storage bin |
US10447347B2 (en) | 2016-08-12 | 2019-10-15 | Mc10, Inc. | Wireless charger and high speed data off-loader |
US9997399B2 (en) * | 2016-08-16 | 2018-06-12 | Mikro Mesa Technology Co., Ltd. | Method for transferring semiconductor structure |
US9827903B1 (en) | 2016-08-18 | 2017-11-28 | Ford Global Technologies, Llc | Illuminated trim panel |
US9616823B1 (en) | 2016-08-22 | 2017-04-11 | Ford Global Technologies, Llc | Illuminated badge for a vehicle |
US10173604B2 (en) | 2016-08-24 | 2019-01-08 | Ford Global Technologies, Llc | Illuminated vehicle console |
US10047911B2 (en) | 2016-08-31 | 2018-08-14 | Ford Global Technologies, Llc | Photoluminescent emission system |
US10047659B2 (en) | 2016-08-31 | 2018-08-14 | Ford Global Technologies, Llc | Photoluminescent engine indicium |
US9604568B1 (en) | 2016-09-01 | 2017-03-28 | Ford Global Technologies, Llc | Vehicle light system |
US10065555B2 (en) | 2016-09-08 | 2018-09-04 | Ford Global Technologies, Llc | Directional approach lighting |
US10075013B2 (en) | 2016-09-08 | 2018-09-11 | Ford Global Technologies, Llc | Vehicle apparatus for charging photoluminescent utilities |
US10308175B2 (en) | 2016-09-08 | 2019-06-04 | Ford Global Technologies, Llc | Illumination apparatus for vehicle accessory |
US10043396B2 (en) | 2016-09-13 | 2018-08-07 | Ford Global Technologies, Llc | Passenger pickup system and method using autonomous shuttle vehicle |
US9980341B2 (en) | 2016-09-22 | 2018-05-22 | X-Celeprint Limited | Multi-LED components |
US9863171B1 (en) | 2016-09-28 | 2018-01-09 | Ford Global Technologies, Llc | Vehicle compartment |
US9593820B1 (en) | 2016-09-28 | 2017-03-14 | Ford Global Technologies, Llc | Vehicle illumination system |
US10157880B2 (en) | 2016-10-03 | 2018-12-18 | X-Celeprint Limited | Micro-transfer printing with volatile adhesive layer |
US10137829B2 (en) | 2016-10-06 | 2018-11-27 | Ford Global Technologies, Llc | Smart drop off lighting system |
US10046688B2 (en) | 2016-10-06 | 2018-08-14 | Ford Global Technologies, Llc | Vehicle containing sales bins |
US9707887B1 (en) | 2016-10-19 | 2017-07-18 | Ford Global Technologies, Llc | Vehicle mirror assembly |
US9914390B1 (en) | 2016-10-19 | 2018-03-13 | Ford Global Technologies, Llc | Vehicle shade assembly |
US10086700B2 (en) | 2016-10-20 | 2018-10-02 | Ford Global Technologies, Llc | Illuminated switch |
US9802534B1 (en) | 2016-10-21 | 2017-10-31 | Ford Global Technologies, Llc | Illuminated vehicle compartment |
TWI598859B (zh) | 2016-10-26 | 2017-09-11 | 友達光電股份有限公司 | 電子裝置與其製造方法 |
US10782002B2 (en) | 2016-10-28 | 2020-09-22 | X Display Company Technology Limited | LED optical components |
US10035473B2 (en) | 2016-11-04 | 2018-07-31 | Ford Global Technologies, Llc | Vehicle trim components |
US11027462B2 (en) | 2016-11-09 | 2021-06-08 | The Board Of Trustees Of Western Michigan University | Polydimethylsiloxane films and method of manufacture |
US10347168B2 (en) | 2016-11-10 | 2019-07-09 | X-Celeprint Limited | Spatially dithered high-resolution |
WO2018091459A1 (en) | 2016-11-15 | 2018-05-24 | X-Celeprint Limited | Micro-transfer-printable flip-chip structures and methods |
US10395966B2 (en) | 2016-11-15 | 2019-08-27 | X-Celeprint Limited | Micro-transfer-printable flip-chip structures and methods |
US10600671B2 (en) | 2016-11-15 | 2020-03-24 | X-Celeprint Limited | Micro-transfer-printable flip-chip structures and methods |
US9902314B1 (en) | 2016-11-17 | 2018-02-27 | Ford Global Technologies, Llc | Vehicle light system |
US10916523B2 (en) | 2016-11-25 | 2021-02-09 | Vuereal Inc. | Microdevice transfer setup and integration of micro-devices into system substrate |
US10978530B2 (en) | 2016-11-25 | 2021-04-13 | Vuereal Inc. | Integration of microdevices into system substrate |
US10998352B2 (en) * | 2016-11-25 | 2021-05-04 | Vuereal Inc. | Integration of microdevices into system substrate |
US10220784B2 (en) | 2016-11-29 | 2019-03-05 | Ford Global Technologies, Llc | Luminescent windshield display |
US9994089B1 (en) | 2016-11-29 | 2018-06-12 | Ford Global Technologies, Llc | Vehicle curtain |
US10783917B1 (en) | 2016-11-29 | 2020-09-22 | Seagate Technology Llc | Recording head with transfer-printed laser diode unit formed of non-self-supporting layers |
CN109906518B (zh) * | 2016-12-05 | 2022-07-01 | 歌尔股份有限公司 | 微激光二极管转移方法和微激光二极管显示装置制造方法 |
US20200006924A1 (en) * | 2016-12-05 | 2020-01-02 | Goertek, Inc. | Micro Laser Diode Display Device and Electronics Apparatus |
US10106074B2 (en) | 2016-12-07 | 2018-10-23 | Ford Global Technologies, Llc | Vehicle lamp system |
US10118538B2 (en) | 2016-12-07 | 2018-11-06 | Ford Global Technologies, Llc | Illuminated rack |
US10422501B2 (en) | 2016-12-14 | 2019-09-24 | Ford Global Technologies, Llc | Vehicle lighting assembly |
US10297502B2 (en) | 2016-12-19 | 2019-05-21 | X-Celeprint Limited | Isolation structure for micro-transfer-printable devices |
US10438859B2 (en) | 2016-12-19 | 2019-10-08 | X-Celeprint Limited | Transfer printed device repair |
SG11201809794SA (en) | 2016-12-20 | 2018-12-28 | Zhejiang Kaiying New Materials Co Ltd | Interdigitated back contact metal-insulator-semiconductor solar cell with printed oxide tunnel junctions |
US10832609B2 (en) | 2017-01-10 | 2020-11-10 | X Display Company Technology Limited | Digital-drive pulse-width-modulated output system |
US10144365B2 (en) | 2017-01-10 | 2018-12-04 | Ford Global Technologies, Llc | Vehicle badge |
EP3346238B1 (en) | 2017-01-10 | 2022-03-02 | Melexis Technologies SA | Sensor with multiple sensing elements |
US9815402B1 (en) | 2017-01-16 | 2017-11-14 | Ford Global Technologies, Llc | Tailgate and cargo box illumination |
US10173582B2 (en) | 2017-01-26 | 2019-01-08 | Ford Global Technologies, Llc | Light system |
US10332868B2 (en) | 2017-01-26 | 2019-06-25 | X-Celeprint Limited | Stacked pixel structures |
US10053006B1 (en) | 2017-01-31 | 2018-08-21 | Ford Global Technologies, Llc | Illuminated assembly |
US9849830B1 (en) | 2017-02-01 | 2017-12-26 | Ford Global Technologies, Llc | Tailgate illumination |
US10041163B1 (en) | 2017-02-03 | 2018-08-07 | Ge-Hitachi Nuclear Energy Americas Llc | Plasma spray coating for sealing a defect area in a workpiece |
US10468391B2 (en) | 2017-02-08 | 2019-11-05 | X-Celeprint Limited | Inorganic light-emitting-diode displays with multi-ILED pixels |
US10427593B2 (en) | 2017-02-09 | 2019-10-01 | Ford Global Technologies, Llc | Vehicle light assembly |
US9896023B1 (en) | 2017-02-09 | 2018-02-20 | Ford Global Technologies, Llc | Vehicle rear lighting assembly |
US10166914B2 (en) * | 2017-02-27 | 2019-01-01 | GM Global Technology Operations LLC | Separable display article |
US9849829B1 (en) | 2017-03-02 | 2017-12-26 | Ford Global Technologies, Llc | Vehicle light system |
US9758090B1 (en) | 2017-03-03 | 2017-09-12 | Ford Global Technologies, Llc | Interior side marker |
US10240737B2 (en) | 2017-03-06 | 2019-03-26 | Ford Global Technologies, Llc | Vehicle light assembly |
US10195985B2 (en) | 2017-03-08 | 2019-02-05 | Ford Global Technologies, Llc | Vehicle light system |
US10399483B2 (en) | 2017-03-08 | 2019-09-03 | Ford Global Technologies, Llc | Vehicle illumination assembly |
US10150396B2 (en) | 2017-03-08 | 2018-12-11 | Ford Global Technologies, Llc | Vehicle cup holder assembly with photoluminescent accessory for increasing the number of available cup holders |
US10396137B2 (en) | 2017-03-10 | 2019-08-27 | X-Celeprint Limited | Testing transfer-print micro-devices on wafer |
US10611298B2 (en) | 2017-03-13 | 2020-04-07 | Ford Global Technologies, Llc | Illuminated cargo carrier |
US20180265043A1 (en) * | 2017-03-14 | 2018-09-20 | Ford Global Technologies, Llc | Proximity switch and humidity sensor assembly |
US10166913B2 (en) | 2017-03-15 | 2019-01-01 | Ford Global Technologies, Llc | Side marker illumination |
US10465879B2 (en) | 2017-03-27 | 2019-11-05 | Ford Global Technologies, Llc | Vehicular light assemblies with LED-excited photoluminescent lightguide |
US11024608B2 (en) | 2017-03-28 | 2021-06-01 | X Display Company Technology Limited | Structures and methods for electrical connection of micro-devices and substrates |
US10483678B2 (en) | 2017-03-29 | 2019-11-19 | Ford Global Technologies, Llc | Vehicle electrical connector |
WO2018187176A1 (en) * | 2017-04-03 | 2018-10-11 | The Johns Hopkins University | Flexible integrated concentrators for solar cells |
US10569696B2 (en) | 2017-04-03 | 2020-02-25 | Ford Global Technologies, Llc | Vehicle illuminated airflow control device |
CN110710072B (zh) | 2017-04-12 | 2022-07-22 | 感应光子公司 | 具有结合光束转向的超小型垂直腔表面发射激光发射器的器件 |
US10023110B1 (en) | 2017-04-21 | 2018-07-17 | Ford Global Technologies, Llc | Vehicle badge sensor assembly |
US10468397B2 (en) | 2017-05-05 | 2019-11-05 | X-Celeprint Limited | Matrix addressed tiles and arrays |
US10035463B1 (en) | 2017-05-10 | 2018-07-31 | Ford Global Technologies, Llc | Door retention system |
US10399486B2 (en) | 2017-05-10 | 2019-09-03 | Ford Global Technologies, Llc | Vehicle door removal and storage |
US9963066B1 (en) | 2017-05-15 | 2018-05-08 | Ford Global Technologies, Llc | Vehicle running board that provides light excitation |
CN106970481A (zh) * | 2017-05-23 | 2017-07-21 | 深圳市华星光电技术有限公司 | 显示面板中有机功能层的制作方法 |
US10059238B1 (en) | 2017-05-30 | 2018-08-28 | Ford Global Technologies, Llc | Vehicle seating assembly |
US10144337B1 (en) | 2017-06-02 | 2018-12-04 | Ford Global Technologies, Llc | Vehicle light assembly |
US10804880B2 (en) | 2018-12-03 | 2020-10-13 | X-Celeprint Limited | Device structures with acoustic wave transducers and connection posts |
US10493904B2 (en) | 2017-07-17 | 2019-12-03 | Ford Global Technologies, Llc | Vehicle light assembly |
US10502690B2 (en) | 2017-07-18 | 2019-12-10 | Ford Global Technologies, Llc | Indicator system for vehicle wear components |
US10137831B1 (en) | 2017-07-19 | 2018-11-27 | Ford Global Technologies, Llc | Vehicle seal assembly |
US10943946B2 (en) | 2017-07-21 | 2021-03-09 | X Display Company Technology Limited | iLED displays with substrate holes |
KR102314308B1 (ko) * | 2017-07-25 | 2021-10-18 | 루멘텀 오퍼레이션즈 엘엘씨 | 단일 칩 직렬 연결의 vcsel 어레이 |
US11171249B2 (en) * | 2017-07-25 | 2021-11-09 | Ams Sensors Singapore Pte. Ltd. | Wafer-level methods for manufacturing uniform layers of material on optoelectronic modules |
US10832935B2 (en) | 2017-08-14 | 2020-11-10 | X Display Company Technology Limited | Multi-level micro-device tethers |
US11784458B2 (en) | 2017-08-18 | 2023-10-10 | Suzhou Lekin Semiconductor Co., Ltd. | Surface-emitting laser package |
US10160405B1 (en) | 2017-08-22 | 2018-12-25 | Ford Global Technologies, Llc | Vehicle decal assembly |
EP3457154B1 (en) | 2017-09-13 | 2020-04-08 | Melexis Technologies SA | Stray field rejection in magnetic sensors |
US10186177B1 (en) | 2017-09-13 | 2019-01-22 | Ford Global Technologies, Llc | Vehicle windshield lighting assembly |
DE102017122879A1 (de) * | 2017-10-02 | 2019-04-04 | Bayerisches Zentrum für Angewandte Energieforschung e.V. | Vorrichtung zur sensorgestützten Datenerfassung |
US10137825B1 (en) | 2017-10-02 | 2018-11-27 | Ford Global Technologies, Llc | Vehicle lamp assembly |
US20210190893A1 (en) | 2017-10-06 | 2021-06-24 | Melexis Technologies Nv | Magnetic sensor sensitivity matching calibration |
EP3467528B1 (en) | 2017-10-06 | 2020-05-20 | Melexis Technologies NV | Magnetic sensor sensitivity matching calibration |
US10391943B2 (en) | 2017-10-09 | 2019-08-27 | Ford Global Technologies, Llc | Vehicle lamp assembly |
EP3470862B1 (en) | 2017-10-10 | 2022-03-02 | Melexis Bulgaria Ltd. | Sensor defect diagnostic circuit |
US10207636B1 (en) | 2017-10-18 | 2019-02-19 | Ford Global Technologies, Llc | Seatbelt stowage assembly |
US10649148B2 (en) | 2017-10-25 | 2020-05-12 | Skorpios Technologies, Inc. | Multistage spot size converter in silicon photonics |
US10189414B1 (en) | 2017-10-26 | 2019-01-29 | Ford Global Technologies, Llc | Vehicle storage assembly |
EP3477322B1 (en) | 2017-10-27 | 2021-06-16 | Melexis Technologies SA | Magnetic sensor with integrated solenoid |
US10836200B2 (en) | 2017-11-13 | 2020-11-17 | X Display Company Technology Limited | Rigid micro-modules with ILED and light conductor |
US10510937B2 (en) | 2017-11-22 | 2019-12-17 | X-Celeprint Limited | Interconnection by lateral transfer printing |
US10998296B2 (en) * | 2017-12-07 | 2021-05-04 | Zkw Group Gmbh | In-vehicle display device using semiconductor light-emitting device |
US10325791B1 (en) | 2017-12-13 | 2019-06-18 | Facebook Technologies, Llc | Formation of elastomeric layer on selective regions of light emitting device |
JP2019109101A (ja) * | 2017-12-18 | 2019-07-04 | 株式会社ヨコオ | 検査治具 |
US10297585B1 (en) | 2017-12-21 | 2019-05-21 | X-Celeprint Limited | Multi-resolution compound micro-devices |
EP3732707A4 (en) * | 2017-12-27 | 2021-09-01 | Princeton Optronics, Inc. | SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING THEREOF |
US10723258B2 (en) | 2018-01-04 | 2020-07-28 | Ford Global Technologies, Llc | Vehicle lamp assembly |
US11423928B1 (en) | 2018-01-19 | 2022-08-23 | Seagate Technology Llc | Processing for forming single-grain near-field transducer |
US10593827B2 (en) | 2018-01-24 | 2020-03-17 | X-Celeprint Limited | Device source wafers with patterned dissociation interfaces |
KR102095215B1 (ko) * | 2018-02-08 | 2020-04-23 | 한국과학기술원 | 전사부재 및 선택적 전사 기술을 이용한 액티브 매트릭스 rgb 수직형 마이크로led 디스플레이 |
US10723257B2 (en) | 2018-02-14 | 2020-07-28 | Ford Global Technologies, Llc | Multi-color luminescent grille for a vehicle |
US11069376B1 (en) | 2018-02-21 | 2021-07-20 | Seagate Technology Llc | Waveguide with optical isolator for heat-assisted magnetic recording |
US11189605B2 (en) | 2018-02-28 | 2021-11-30 | X Display Company Technology Limited | Displays with transparent bezels |
US10690920B2 (en) | 2018-02-28 | 2020-06-23 | X Display Company Technology Limited | Displays with transparent bezels |
US10627092B2 (en) | 2018-03-05 | 2020-04-21 | Ford Global Technologies, Llc | Vehicle grille assembly |
DE102018104936A1 (de) * | 2018-03-05 | 2019-09-05 | Osram Opto Semiconductors Gmbh | Halbleiterbauteil und Verfahren zur Herstellung eines Halbleiterbauteils |
US10281113B1 (en) | 2018-03-05 | 2019-05-07 | Ford Global Technologies, Llc | Vehicle grille |
EP3766105A4 (en) * | 2018-03-14 | 2023-08-02 | Boe Technology Group Co., Ltd. | METHOD FOR TRANSFERRING A PLURALITY OF LIGHT EMITTING MICRO-DIODES TO A TARGET SUBSTRATE, MATRIX SUBSTRATE AND ASSOCIATED DISPLAY APPARATUS |
FR3079663B1 (fr) * | 2018-04-03 | 2020-05-08 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Support pour la formation d'un composant optoelectronique, composant optoelectronique et procede de fabrication d'un tel support et d'un tel composant |
US11362229B2 (en) | 2018-04-04 | 2022-06-14 | California Institute Of Technology | Epitaxy-free nanowire cell process for the manufacture of photovoltaics |
US10703263B2 (en) | 2018-04-11 | 2020-07-07 | Ford Global Technologies, Llc | Vehicle light system |
US10457196B1 (en) | 2018-04-11 | 2019-10-29 | Ford Global Technologies, Llc | Vehicle light assembly |
US20190326460A1 (en) * | 2018-04-20 | 2019-10-24 | California Institute Of Technology | Micro-Grid Luminescent Solar Concentrators and Related Methods of Manufacturing |
US10778223B2 (en) | 2018-04-23 | 2020-09-15 | Ford Global Technologies, Llc | Hidden switch assembly |
US10910355B2 (en) | 2018-04-30 | 2021-02-02 | X Display Company Technology Limited | Bezel-free displays |
US10505079B2 (en) | 2018-05-09 | 2019-12-10 | X-Celeprint Limited | Flexible devices and methods using laser lift-off |
CN110504338A (zh) * | 2018-05-18 | 2019-11-26 | 睿明科技股份有限公司 | 微元件工艺及制作显示器面板的方法 |
US10644044B2 (en) | 2018-05-31 | 2020-05-05 | National Research Council Of Canada | Methods of manufacturing printable photodetector array panels |
EP3581951A1 (en) | 2018-06-12 | 2019-12-18 | Melexis Bulgaria Ltd. | Sensor saturation fault detection |
US10832934B2 (en) | 2018-06-14 | 2020-11-10 | X Display Company Technology Limited | Multi-layer tethers for micro-transfer printing |
TWI691068B (zh) * | 2018-06-15 | 2020-04-11 | 群邁通訊股份有限公司 | 顯示模組及具有該顯示模組之電子裝置 |
US10714001B2 (en) | 2018-07-11 | 2020-07-14 | X Display Company Technology Limited | Micro-light-emitting-diode displays |
US10991852B2 (en) * | 2018-07-25 | 2021-04-27 | Jmicro Inc. | Transparent light-emitting display film, method of manufacturing the same, and transparent light-emitting signage using the same |
CN109038207B (zh) * | 2018-07-27 | 2020-11-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种可控温vcsel器件及其制作方法 |
US10796971B2 (en) | 2018-08-13 | 2020-10-06 | X Display Company Technology Limited | Pressure-activated electrical interconnection with additive repair |
WO2020041522A1 (en) | 2018-08-21 | 2020-02-27 | California Institute Of Technology | Windows implementing effectively transparent conductors and related methods of manufacturing |
US20210296852A1 (en) * | 2018-08-22 | 2021-09-23 | Shenzhen Raysees Technology Co., Ltd. | Vertical cavity surface emitting laser (vcsel) array package and manufacturing method |
KR102364569B1 (ko) * | 2018-08-24 | 2022-02-17 | 주식회사 엘지화학 | 투명 발광소자 디스플레이용 전극 기판 및 이를 포함하는 투명 발광소자 디스플레이 |
US10576893B1 (en) | 2018-10-08 | 2020-03-03 | Ford Global Technologies, Llc | Vehicle light assembly |
WO2020081448A1 (en) | 2018-10-15 | 2020-04-23 | Semtech Corporation | Semiconductor package for providing mechanical isolation of assembled diodes |
US10573544B1 (en) | 2018-10-17 | 2020-02-25 | X-Celeprint Limited | Micro-transfer printing with selective component removal |
US10796938B2 (en) | 2018-10-17 | 2020-10-06 | X Display Company Technology Limited | Micro-transfer printing with selective component removal |
EP3647741B1 (en) | 2018-10-29 | 2022-08-03 | Melexis Bulgaria Ltd. | Sensor diagnostic device and method |
US10790173B2 (en) | 2018-12-03 | 2020-09-29 | X Display Company Technology Limited | Printed components on substrate posts |
US11482979B2 (en) | 2018-12-03 | 2022-10-25 | X Display Company Technology Limited | Printing components over substrate post edges |
US11528808B2 (en) | 2018-12-03 | 2022-12-13 | X Display Company Technology Limited | Printing components to substrate posts |
US20210002128A1 (en) | 2018-12-03 | 2021-01-07 | X-Celeprint Limited | Enclosed cavity structures |
US11274035B2 (en) | 2019-04-24 | 2022-03-15 | X-Celeprint Limited | Overhanging device structures and related methods of manufacture |
US11282786B2 (en) | 2018-12-12 | 2022-03-22 | X Display Company Technology Limited | Laser-formed interconnects for redundant devices |
US11483937B2 (en) | 2018-12-28 | 2022-10-25 | X Display Company Technology Limited | Methods of making printed structures |
US10720551B1 (en) | 2019-01-03 | 2020-07-21 | Ford Global Technologies, Llc | Vehicle lamps |
US11322460B2 (en) | 2019-01-22 | 2022-05-03 | X-Celeprint Limited | Secure integrated-circuit systems |
US11251139B2 (en) | 2019-01-22 | 2022-02-15 | X-Celeprint Limited | Secure integrated-circuit systems |
US11360263B2 (en) | 2019-01-31 | 2022-06-14 | Skorpios Technologies. Inc. | Self-aligned spot size converter |
US11088121B2 (en) | 2019-02-13 | 2021-08-10 | X Display Company Technology Limited | Printed LED arrays with large-scale uniformity |
US10748793B1 (en) | 2019-02-13 | 2020-08-18 | X Display Company Technology Limited | Printing component arrays with different orientations |
US11398399B2 (en) | 2019-03-08 | 2022-07-26 | X Display Company Technology Limited | Components with backside adhesive layers |
US11164934B2 (en) | 2019-03-12 | 2021-11-02 | X Display Company Technology Limited | Tiled displays with black-matrix support screens |
US11094870B2 (en) | 2019-03-12 | 2021-08-17 | X Display Company Technology Limited | Surface-mountable pixel packages and pixel engines |
US11939688B2 (en) | 2019-03-29 | 2024-03-26 | California Institute Of Technology | Apparatus and systems for incorporating effective transparent catalyst for photoelectrochemical application |
US10714374B1 (en) | 2019-05-09 | 2020-07-14 | X Display Company Technology Limited | High-precision printed structures |
US10749045B1 (en) * | 2019-05-23 | 2020-08-18 | Zhejiang Kaiying New Materials Co., Ltd. | Solar cell side surface interconnects |
US10622502B1 (en) | 2019-05-23 | 2020-04-14 | Zhejiang Kaiying New Materials Co., Ltd. | Solar cell edge interconnects |
US11488943B2 (en) | 2019-06-14 | 2022-11-01 | X Display Company Technology Limited | Modules with integrated circuits and devices |
US10944027B2 (en) | 2019-06-14 | 2021-03-09 | X Display Company Technology Limited | Pixel modules with controllers and light emitters |
US11101417B2 (en) | 2019-08-06 | 2021-08-24 | X Display Company Technology Limited | Structures and methods for electrically connecting printed components |
CN114402243A (zh) * | 2019-09-20 | 2022-04-26 | 利派克株式会社 | 超小型光发送模块及应用半导体封装方式的其制造方法 |
US11630316B1 (en) | 2019-10-30 | 2023-04-18 | Brigham Young University | Miniaturized collimators |
US11471078B1 (en) | 2019-10-30 | 2022-10-18 | Brigham Young University | Miniaturized spectrometers for wearable devices |
US11626856B2 (en) | 2019-10-30 | 2023-04-11 | X-Celeprint Limited | Non-linear tethers for suspended devices |
US11127889B2 (en) | 2019-10-30 | 2021-09-21 | X Display Company Technology Limited | Displays with unpatterned layers of light-absorbing material |
US11637540B2 (en) | 2019-10-30 | 2023-04-25 | X-Celeprint Limited | Non-linear tethers for suspended devices |
US11877845B1 (en) | 2019-10-30 | 2024-01-23 | Brigham Young University | Miniaturized spectrometers on transparent substrates |
US11589764B1 (en) | 2019-10-30 | 2023-02-28 | Brigham Young University | Methods and devices for aligning miniaturized spectrometers and impedance sensors in wearable devices |
US11062936B1 (en) | 2019-12-19 | 2021-07-13 | X Display Company Technology Limited | Transfer stamps with multiple separate pedestals |
US11315909B2 (en) | 2019-12-20 | 2022-04-26 | X Display Company Technology Limited | Displays with embedded light emitters |
US11037912B1 (en) | 2020-01-31 | 2021-06-15 | X Display Company Technology Limited | LED color displays with multiple LEDs connected in series and parallel in different sub-pixels of a pixel |
US11387178B2 (en) | 2020-03-06 | 2022-07-12 | X-Celeprint Limited | Printable 3D electronic components and structures |
US11850874B2 (en) | 2020-03-30 | 2023-12-26 | X Display Company Technology Limited | Micro-transfer printing stamps and components |
EP4143895A2 (en) | 2020-05-01 | 2023-03-08 | X-Celeprint Limited | Hybrid documents with electronic indicia and piezoelectric power components usable in such documents |
EP4146587A1 (en) | 2020-05-05 | 2023-03-15 | X-Celeprint Limited | Enclosed cavity structures |
US11088007B1 (en) | 2020-05-07 | 2021-08-10 | X-Celeprint Limited | Component tethers with spacers |
US11495561B2 (en) | 2020-05-11 | 2022-11-08 | X Display Company Technology Limited | Multilayer electrical conductors for transfer printing |
US11538849B2 (en) | 2020-05-28 | 2022-12-27 | X Display Company Technology Limited | Multi-LED structures with reduced circuitry |
US11088093B1 (en) | 2020-05-28 | 2021-08-10 | X-Celeprint Limited | Micro-component anti-stiction structures |
CN111599800B (zh) * | 2020-05-29 | 2022-04-01 | 上海天马微电子有限公司 | 显示面板、显示装置及显示面板的制备方法 |
US11777065B2 (en) | 2020-05-29 | 2023-10-03 | X Display Company Technology Limited | White-light-emitting LED structures |
WO2022003431A1 (en) * | 2020-06-28 | 2022-01-06 | Orbotech Ltd. | Laser printing of solder pastes |
US11316086B2 (en) | 2020-07-10 | 2022-04-26 | X Display Company Technology Limited | Printed structures with electrical contact having reflowable polymer core |
US11282439B2 (en) | 2020-07-16 | 2022-03-22 | X Display Company Technology Limited | Analog pulse-width-modulation control circuits |
US11742450B2 (en) | 2020-08-31 | 2023-08-29 | X Display Company Technology Limited | Hybrid electro-optically controlled matrix-addressed systems |
TWI749955B (zh) * | 2020-09-28 | 2021-12-11 | 天虹科技股份有限公司 | 減少非輻射復合的微發光二極體的製作方法及製作機台 |
US11952266B2 (en) | 2020-10-08 | 2024-04-09 | X-Celeprint Limited | Micro-device structures with etch holes |
US11495172B2 (en) | 2020-10-19 | 2022-11-08 | X Display Company Technology Limited | Pixel group and column token display architectures |
US11488518B2 (en) | 2020-10-19 | 2022-11-01 | X Display Company Technology Limited | Pixel group and column token display architectures |
CN114384723B (zh) * | 2020-10-20 | 2023-06-13 | 京东方科技集团股份有限公司 | 一种前置光源及其制作方法、显示装置 |
US11152395B1 (en) | 2020-11-12 | 2021-10-19 | X-Celeprint Limited | Monolithic multi-FETs |
US11588075B2 (en) | 2020-11-24 | 2023-02-21 | X Display Company Technology Limited | Displays with interpolated pixels |
US11482562B2 (en) | 2020-12-30 | 2022-10-25 | Applied Materials, Inc. | Methods for forming image sensors |
KR20220100748A (ko) * | 2021-01-08 | 2022-07-18 | 삼성디스플레이 주식회사 | 잉크 평탄화 장치 및 이를 이용한 표시 장치의 제조 방법 |
US11490519B2 (en) | 2021-01-11 | 2022-11-01 | X-Celeprint Limited | Printed stacked micro-devices |
US11430375B1 (en) | 2021-03-19 | 2022-08-30 | X Display Company Technology Limited | Pulse-density-modulation pixel control circuits and devices including them |
CN113225129A (zh) * | 2021-05-07 | 2021-08-06 | 中国科学院半导体研究所 | 一种共形化空间光通信全向接收设备和方法 |
US11386826B1 (en) | 2021-06-22 | 2022-07-12 | X Display Company Technology Limited | Flat-panel pixel arrays with signal regeneration |
US11568796B1 (en) | 2021-07-29 | 2023-01-31 | X Display Company Technology Limited | Displays with current-controlled pixel clusters |
US11862607B2 (en) | 2021-08-16 | 2024-01-02 | Micron Technology, Inc. | Composite dielectric structures for semiconductor die assemblies and associated systems and methods |
US11677039B2 (en) | 2021-11-18 | 2023-06-13 | International Business Machines Corporation | Vertical silicon and III-V photovoltaics integration with silicon electronics |
WO2023183050A1 (en) * | 2022-03-22 | 2023-09-28 | Ferric Inc. | Method for manufacturing ferromagnetic-dielectric composite material |
US11906133B2 (en) | 2022-03-31 | 2024-02-20 | Alliance Sports Group, L.P. | Outdoor lighting apparatus |
US11568803B1 (en) | 2022-04-27 | 2023-01-31 | X Display Company Technology Limited | Multi-row buffering for active-matrix cluster displays |
WO2023217637A1 (en) | 2022-05-09 | 2023-11-16 | X-Celeprint Limited | High-precision printed structures and methods of making |
CN115274986B (zh) * | 2022-09-29 | 2022-12-16 | 惠科股份有限公司 | 生长基板、显示面板及其制作方法 |
WO2024074715A1 (en) | 2022-10-07 | 2024-04-11 | X-Celeprint Limited | Transfer-printed micro-optical components |
Family Cites Families (265)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3936694A (en) * | 1973-12-28 | 1976-02-03 | Sony Corporation | Display structure having light emitting diodes |
US4058418A (en) | 1974-04-01 | 1977-11-15 | Solarex Corporation | Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth |
JPS5752143A (en) * | 1980-09-16 | 1982-03-27 | Toshiba Corp | Mounting method and device for semiconductor pellet |
US4487162A (en) | 1980-11-25 | 1984-12-11 | Cann Gordon L | Magnetoplasmadynamic apparatus for the separation and deposition of materials |
US4471003A (en) | 1980-11-25 | 1984-09-11 | Cann Gordon L | Magnetoplasmadynamic apparatus and process for the separation and deposition of materials |
US4392451A (en) * | 1980-12-31 | 1983-07-12 | The Boeing Company | Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI2 chalcopyrite compounds |
US4761335A (en) * | 1985-03-07 | 1988-08-02 | National Starch And Chemical Corporation | Alpha-particle protection of semiconductor devices |
US4784720A (en) | 1985-05-03 | 1988-11-15 | Texas Instruments Incorporated | Trench etch process for a single-wafer RIE dry etch reactor |
US4855017A (en) * | 1985-05-03 | 1989-08-08 | Texas Instruments Incorporated | Trench etch process for a single-wafer RIE dry etch reactor |
US4663828A (en) * | 1985-10-11 | 1987-05-12 | Energy Conversion Devices, Inc. | Process and apparatus for continuous production of lightweight arrays of photovoltaic cells |
US4766670A (en) * | 1987-02-02 | 1988-08-30 | International Business Machines Corporation | Full panel electronic packaging structure and method of making same |
US5118361A (en) * | 1990-05-21 | 1992-06-02 | The Boeing Company | Terrestrial concentrator solar cell module |
US5475514A (en) | 1990-12-31 | 1995-12-12 | Kopin Corporation | Transferred single crystal arrayed devices including a light shield for projection displays |
US5300788A (en) * | 1991-01-18 | 1994-04-05 | Kopin Corporation | Light emitting diode bars and arrays and method of making same |
US5204144A (en) * | 1991-05-10 | 1993-04-20 | Celestech, Inc. | Method for plasma deposition on apertured substrates |
JPH06118441A (ja) | 1991-11-05 | 1994-04-28 | Tadanobu Kato | 表示セル |
US5313094A (en) * | 1992-01-28 | 1994-05-17 | International Business Machines Corportion | Thermal dissipation of integrated circuits using diamond paths |
DE4241045C1 (de) | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
US5793107A (en) * | 1993-10-29 | 1998-08-11 | Vlsi Technology, Inc. | Polysilicon pillar heat sinks for semiconductor on insulator circuits |
US6864570B2 (en) * | 1993-12-17 | 2005-03-08 | The Regents Of The University Of California | Method and apparatus for fabricating self-assembling microstructures |
US5904545A (en) * | 1993-12-17 | 1999-05-18 | The Regents Of The University Of California | Apparatus for fabricating self-assembling microstructures |
US5824186A (en) | 1993-12-17 | 1998-10-20 | The Regents Of The University Of California | Method and apparatus for fabricating self-assembling microstructures |
US5545291A (en) * | 1993-12-17 | 1996-08-13 | The Regents Of The University Of California | Method for fabricating self-assembling microstructures |
US5514242A (en) * | 1993-12-30 | 1996-05-07 | Saint Gobain/Norton Industrial Ceramics Corporation | Method of forming a heat-sinked electronic component |
DE69534888T2 (de) * | 1994-04-06 | 2006-11-02 | Denso Corp., Kariya | Herstellungsverfahren für Halbleiterbauelement mit Graben |
US5434751A (en) * | 1994-04-11 | 1995-07-18 | Martin Marietta Corporation | Reworkable high density interconnect structure incorporating a release layer |
US5753529A (en) * | 1994-05-05 | 1998-05-19 | Siliconix Incorporated | Surface mount and flip chip technology for total integrated circuit isolation |
JP3303154B2 (ja) * | 1994-09-30 | 2002-07-15 | ローム株式会社 | 半導体発光素子 |
US5525815A (en) * | 1994-10-03 | 1996-06-11 | General Electric Company | Diamond film structure with high thermal conductivity |
US5767578A (en) * | 1994-10-12 | 1998-06-16 | Siliconix Incorporated | Surface mount and flip chip technology with diamond film passivation for total integated circuit isolation |
US6459418B1 (en) | 1995-07-20 | 2002-10-01 | E Ink Corporation | Displays combining active and non-active inks |
US6639578B1 (en) | 1995-07-20 | 2003-10-28 | E Ink Corporation | Flexible displays |
WO1997006012A1 (en) | 1995-08-04 | 1997-02-20 | International Business Machines Corporation | Stamp for a lithographic process |
US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
US6784023B2 (en) * | 1996-05-20 | 2004-08-31 | Micron Technology, Inc. | Method of fabrication of stacked semiconductor devices |
JP3224396B2 (ja) * | 1996-05-29 | 2001-10-29 | 出光興産株式会社 | 有機el素子 |
JP3944915B2 (ja) | 1996-10-17 | 2007-07-18 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
DE19643550A1 (de) | 1996-10-24 | 1998-05-14 | Leybold Systems Gmbh | Lichttransparentes, Wärmestrahlung reflektierendes Schichtensystem |
US5691245A (en) | 1996-10-28 | 1997-11-25 | He Holdings, Inc. | Methods of forming two-sided HDMI interconnect structures |
JP2980046B2 (ja) * | 1997-02-03 | 1999-11-22 | 日本電気株式会社 | 半導体装置の実装構造および実装方法 |
US5925897A (en) * | 1997-02-14 | 1999-07-20 | Oberman; David B. | Optoelectronic semiconductor diodes and devices comprising same |
US6980196B1 (en) | 1997-03-18 | 2005-12-27 | Massachusetts Institute Of Technology | Printable electronic display |
US5998291A (en) | 1997-04-07 | 1999-12-07 | Raytheon Company | Attachment method for assembly of high density multiple interconnect structures |
US5907189A (en) * | 1997-05-29 | 1999-05-25 | Lsi Logic Corporation | Conformal diamond coating for thermal improvement of electronic packages |
US6142358A (en) | 1997-05-31 | 2000-11-07 | The Regents Of The University Of California | Wafer-to-wafer transfer of microstructures using break-away tethers |
DE19829309B4 (de) * | 1997-07-04 | 2008-02-07 | Fuji Electric Co., Ltd., Kawasaki | Verfahren zur Herstellung eines thermischen Oxidfilms auf Siliciumcarbid |
US5928001A (en) * | 1997-09-08 | 1999-07-27 | Motorola, Inc. | Surface mountable flexible interconnect |
FR2769640B1 (fr) * | 1997-10-15 | 1999-12-17 | Sgs Thomson Microelectronics | Amelioration de la resistance mecanique d'une tranche de silicium monocristallin |
JP3219043B2 (ja) | 1998-01-07 | 2001-10-15 | 日本電気株式会社 | 半導体装置のパッケージ方法および半導体装置 |
US5955781A (en) | 1998-01-13 | 1999-09-21 | International Business Machines Corporation | Embedded thermal conductors for semiconductor chips |
US6316283B1 (en) | 1998-03-25 | 2001-11-13 | Asulab Sa | Batch manufacturing method for photovoltaic cells |
JPH11338385A (ja) * | 1998-05-22 | 1999-12-10 | Stanley Electric Co Ltd | Led表示装置の製造方法およびその製造装置 |
AU2373200A (en) | 1999-02-05 | 2000-08-25 | Alien Technology Corporation | Apparatuses and methods for forming assemblies |
US6274508B1 (en) * | 1999-02-05 | 2001-08-14 | Alien Technology Corporation | Apparatuses and methods used in forming assemblies |
US6850312B2 (en) * | 1999-03-16 | 2005-02-01 | Alien Technology Corporation | Apparatuses and methods for flexible displays |
US6555408B1 (en) * | 1999-02-05 | 2003-04-29 | Alien Technology Corporation | Methods for transferring elements from a template to a substrate |
US6281038B1 (en) * | 1999-02-05 | 2001-08-28 | Alien Technology Corporation | Methods for forming assemblies |
US6683663B1 (en) * | 1999-02-05 | 2004-01-27 | Alien Technology Corporation | Web fabrication of devices |
US6606079B1 (en) * | 1999-02-16 | 2003-08-12 | Alien Technology Corporation | Pixel integrated circuit |
US6380729B1 (en) | 1999-02-16 | 2002-04-30 | Alien Technology Corporation | Testing integrated circuit dice |
US6291896B1 (en) | 1999-02-16 | 2001-09-18 | Alien Technology Corporation | Functionally symmetric integrated circuit die |
US6334960B1 (en) * | 1999-03-11 | 2002-01-01 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
US6316278B1 (en) | 1999-03-16 | 2001-11-13 | Alien Technology Corporation | Methods for fabricating a multiple modular assembly |
US6468638B2 (en) | 1999-03-16 | 2002-10-22 | Alien Technology Corporation | Web process interconnect in electronic assemblies |
KR100434537B1 (ko) * | 1999-03-31 | 2004-06-05 | 삼성전자주식회사 | 다공질 실리콘 혹은 다공질 산화 실리콘을 이용한 두꺼운 희생층을 가진 다층 구조 웨이퍼 및 그 제조방법 |
US6225149B1 (en) * | 1999-05-03 | 2001-05-01 | Feng Yuan Gan | Methods to fabricate thin film transistors and circuits |
US6455347B1 (en) * | 1999-06-14 | 2002-09-24 | Kaneka Corporation | Method of fabricating thin-film photovoltaic module |
JP4948726B2 (ja) * | 1999-07-21 | 2012-06-06 | イー インク コーポレイション | 電子ディスプレイを制御するための電子回路素子を作製する好適な方法 |
US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
AU1348901A (en) | 1999-10-28 | 2001-05-08 | P1 Diamond, Inc. | Improved diamond thermal management components |
TW478089B (en) * | 1999-10-29 | 2002-03-01 | Hitachi Ltd | Semiconductor device and the manufacturing method thereof |
US6479395B1 (en) | 1999-11-02 | 2002-11-12 | Alien Technology Corporation | Methods for forming openings in a substrate and apparatuses with these openings and methods for creating assemblies with openings |
US6420266B1 (en) * | 1999-11-02 | 2002-07-16 | Alien Technology Corporation | Methods for creating elements of predetermined shape and apparatuses using these elements |
US6623579B1 (en) | 1999-11-02 | 2003-09-23 | Alien Technology Corporation | Methods and apparatus for fluidic self assembly |
US6527964B1 (en) * | 1999-11-02 | 2003-03-04 | Alien Technology Corporation | Methods and apparatuses for improved flow in performing fluidic self assembly |
JP4360015B2 (ja) | 2000-03-17 | 2009-11-11 | セイコーエプソン株式会社 | 有機el表示体の製造方法、半導体素子の配置方法、半導体装置の製造方法 |
US6787052B1 (en) | 2000-06-19 | 2004-09-07 | Vladimir Vaganov | Method for fabricating microstructures with deep anisotropic etching of thick silicon wafers |
US6403397B1 (en) * | 2000-06-28 | 2002-06-11 | Agere Systems Guardian Corp. | Process for fabricating organic semiconductor device involving selective patterning |
JP4120184B2 (ja) * | 2000-06-30 | 2008-07-16 | セイコーエプソン株式会社 | 実装用微小構造体および光伝送装置 |
WO2002003142A2 (en) | 2000-06-30 | 2002-01-10 | President And Fellows Of Harvard College | Electric microcontact printing method and apparatus |
US6723576B2 (en) * | 2000-06-30 | 2004-04-20 | Seiko Epson Corporation | Disposing method for semiconductor elements |
US6812057B2 (en) * | 2000-07-07 | 2004-11-02 | Nippon Sheet Glass Co., Ltd. | Method of producing an optical module |
JP3906653B2 (ja) * | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 画像表示装置及びその製造方法 |
DE10037715A1 (de) | 2000-08-02 | 2002-02-14 | Endress Hauser Gmbh Co | Vorrichtung zur Messung des Füllstands eines Füllguts in einem Behälter |
US6780696B1 (en) * | 2000-09-12 | 2004-08-24 | Alien Technology Corporation | Method and apparatus for self-assembly of functional blocks on a substrate facilitated by electrode pairs |
JP2002092984A (ja) | 2000-09-18 | 2002-03-29 | Hitachi Maxell Ltd | スタンパ及びその製造方法、並びにプラスチック基板 |
US6980184B1 (en) | 2000-09-27 | 2005-12-27 | Alien Technology Corporation | Display devices and integrated circuits |
JP4491948B2 (ja) | 2000-10-06 | 2010-06-30 | ソニー株式会社 | 素子実装方法および画像表示装置の製造方法 |
US6814898B1 (en) | 2000-10-17 | 2004-11-09 | Seagate Technology Llc | Imprint lithography utilizing room temperature embossing |
AU2002239287A1 (en) | 2000-11-21 | 2002-06-03 | Avery Dennison Corporation | Display device and methods of manufacture and control |
JP2004521485A (ja) * | 2000-11-27 | 2004-07-15 | コピン コーポレーション | 格子整合されたベース層を有するバイポーラトランジスタ |
US6743982B2 (en) | 2000-11-29 | 2004-06-01 | Xerox Corporation | Stretchable interconnects using stress gradient films |
US6655286B2 (en) | 2001-01-19 | 2003-12-02 | Lucent Technologies Inc. | Method for preventing distortions in a flexibly transferred feature pattern |
FR2820952B1 (fr) * | 2001-02-16 | 2003-05-16 | Lucas Sa G | Melangeuse distributrice de produits pour l'alimentation du betail |
JP3665579B2 (ja) * | 2001-02-26 | 2005-06-29 | ソニーケミカル株式会社 | 電気装置製造方法 |
JP2002289912A (ja) | 2001-03-26 | 2002-10-04 | Canon Inc | 面型発光素子、面型発光素子アレー、およびその製造方法 |
KR101008294B1 (ko) * | 2001-03-30 | 2011-01-13 | 더 리전트 오브 더 유니버시티 오브 캘리포니아 | 나노구조체 및 나노와이어의 제조 방법 및 그로부터 제조되는 디바이스 |
US6417025B1 (en) * | 2001-04-02 | 2002-07-09 | Alien Technology Corporation | Integrated circuit packages assembled utilizing fluidic self-assembly |
US6667548B2 (en) | 2001-04-06 | 2003-12-23 | Intel Corporation | Diamond heat spreading and cooling technique for integrated circuits |
US6864435B2 (en) * | 2001-04-25 | 2005-03-08 | Alien Technology Corporation | Electrical contacts for flexible displays |
AU2002257289A1 (en) | 2001-05-17 | 2002-11-25 | The Board Of Trustees Of The Leland Stanford Junior University | Device and method for three-dimensional spatial localization and functional interconnection of different types of cells |
JP4321978B2 (ja) | 2001-05-21 | 2009-08-26 | イビデン株式会社 | 多層プリント配線板および多層プリント配線板の製造方法 |
US6606247B2 (en) * | 2001-05-31 | 2003-08-12 | Alien Technology Corporation | Multi-feature-size electronic structures |
US6988667B2 (en) | 2001-05-31 | 2006-01-24 | Alien Technology Corporation | Methods and apparatuses to identify devices |
JP2005514906A (ja) | 2001-06-05 | 2005-05-26 | エクセリクシス・インコーポレイテッド | p53経路のモディファイヤーとしてのLCEsおよび使用方法 |
JP4734770B2 (ja) * | 2001-06-12 | 2011-07-27 | ソニー株式会社 | 樹脂形成素子の製造方法、画像表示装置の製造方法、および照明装置の製造方法 |
US6900094B2 (en) * | 2001-06-14 | 2005-05-31 | Amberwave Systems Corporation | Method of selective removal of SiGe alloys |
US20030006527A1 (en) | 2001-06-22 | 2003-01-09 | Rabolt John F. | Method of fabricating micron-and submicron-scale elastomeric templates for surface patterning |
US6984934B2 (en) * | 2001-07-10 | 2006-01-10 | The Trustees Of Princeton University | Micro-lens arrays for display intensity enhancement |
US6657289B1 (en) | 2001-07-13 | 2003-12-02 | Alien Technology Corporation | Apparatus relating to block configurations and fluidic self-assembly processes |
US6590346B1 (en) * | 2001-07-16 | 2003-07-08 | Alien Technology Corporation | Double-metal background driven displays |
US6917061B2 (en) * | 2001-07-20 | 2005-07-12 | Microlink Devices, Inc. | AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor |
AU2002322581A1 (en) * | 2001-07-20 | 2003-03-03 | Microlink Devices, Inc. | Graded base gaassb for high speed gaas hbt |
US6661037B2 (en) | 2001-07-20 | 2003-12-09 | Microlink Devices, Inc. | Low emitter resistance contacts to GaAs high speed HBT |
US6949199B1 (en) | 2001-08-16 | 2005-09-27 | Seagate Technology Llc | Heat-transfer-stamp process for thermal imprint lithography |
US6863219B1 (en) * | 2001-08-17 | 2005-03-08 | Alien Technology Corporation | Apparatuses and methods for forming electronic assemblies |
US6731353B1 (en) * | 2001-08-17 | 2004-05-04 | Alien Technology Corporation | Method and apparatus for transferring blocks |
JP2003077940A (ja) | 2001-09-06 | 2003-03-14 | Sony Corp | 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法 |
US7193504B2 (en) | 2001-10-09 | 2007-03-20 | Alien Technology Corporation | Methods and apparatuses for identification |
TW594947B (en) * | 2001-10-30 | 2004-06-21 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
JP4301950B2 (ja) | 2001-12-04 | 2009-07-22 | オリジン エナジー ソーラー ピーティーワイ リミテッド | 太陽電池用の薄いシリコンシートを製造する方法 |
US6844673B1 (en) * | 2001-12-06 | 2005-01-18 | Alien Technology Corporation | Split-fabrication for light emitting display structures |
US6887450B2 (en) * | 2002-01-02 | 2005-05-03 | Zyvex Corporation | Directional assembly of carbon nanotube strings |
KR20040105705A (ko) | 2002-01-23 | 2004-12-16 | 에이리언 테크놀로지 코포레이션 | 소형 및 대형 부품을 갖는 장치 및 그 장치의 제조 방법 |
US6608370B1 (en) * | 2002-01-28 | 2003-08-19 | Motorola, Inc. | Semiconductor wafer having a thin die and tethers and methods of making the same |
US6693384B1 (en) * | 2002-02-01 | 2004-02-17 | Alien Technology Corporation | Interconnect structure for electronic devices |
DE60310282T2 (de) * | 2002-03-01 | 2007-05-10 | Dai Nippon Printing Co., Ltd. | Thermisch übertragbares Bildschutzblatt, Verfahren zur Schutzschicht-Bildung und durch das Verfahren hergestellte Aufnahme |
JP3889700B2 (ja) | 2002-03-13 | 2007-03-07 | 三井金属鉱業株式会社 | Cofフィルムキャリアテープの製造方法 |
US6950220B2 (en) | 2002-03-18 | 2005-09-27 | E Ink Corporation | Electro-optic displays, and methods for driving same |
JP3833131B2 (ja) * | 2002-03-25 | 2006-10-11 | キヤノン株式会社 | 光伝送装置 |
JP3980918B2 (ja) | 2002-03-28 | 2007-09-26 | 株式会社東芝 | アクティブマトリクス基板及びその製造方法、表示装置 |
JP2003297974A (ja) | 2002-03-29 | 2003-10-17 | Seiko Epson Corp | 半導体装置、電気光学装置および半導体装置の製造方法 |
US6872645B2 (en) | 2002-04-02 | 2005-03-29 | Nanosys, Inc. | Methods of positioning and/or orienting nanostructures |
US20040026684A1 (en) * | 2002-04-02 | 2004-02-12 | Nanosys, Inc. | Nanowire heterostructures for encoding information |
JP2005524110A (ja) | 2002-04-24 | 2005-08-11 | イー−インク コーポレイション | 電子表示装置 |
US6946205B2 (en) * | 2002-04-25 | 2005-09-20 | Matsushita Electric Industrial Co., Ltd. | Wiring transfer sheet and method for producing the same, and wiring board and method for producing the same |
DE10219120A1 (de) | 2002-04-29 | 2003-11-20 | Infineon Technologies Ag | Oberflächenfunktionalisierte anorganische Halbleiterpartikel als elektrische Halbleiter für mikroelektronische Anwendungen |
JP4719464B2 (ja) * | 2002-05-08 | 2011-07-06 | エージェンシー フォー サイエンス,テクノロジー アンド リサーチ | マイクロ/ナノ構造を基板上にインプリントする方法 |
US20040136866A1 (en) * | 2002-06-27 | 2004-07-15 | Nanosys, Inc. | Planar nanowire based sensor elements, devices, systems and methods for using and making same |
US7038373B2 (en) * | 2002-07-16 | 2006-05-02 | Eastman Kodak Company | Organic light emitting diode display |
US7371963B2 (en) | 2002-07-31 | 2008-05-13 | Kyocera Corporation | Photovoltaic power generation system |
US7117581B2 (en) * | 2002-08-02 | 2006-10-10 | Symbol Technologies, Inc. | Method for high volume assembly of radio frequency identification tags |
EP1530510A1 (de) | 2002-08-27 | 2005-05-18 | Nanosys GMBH | Verfahren zur hydrophobierung der oberfläche eines porösen substrats unter beibehaltung seiner porosität |
EP2399970A3 (en) | 2002-09-05 | 2012-04-18 | Nanosys, Inc. | Nanocomposites |
AU2003298998A1 (en) * | 2002-09-05 | 2004-04-08 | Nanosys, Inc. | Oriented nanostructures and methods of preparing |
US6878871B2 (en) * | 2002-09-05 | 2005-04-12 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
CA2497451A1 (en) | 2002-09-05 | 2004-03-18 | Nanosys, Inc. | Organic species that facilitate charge transfer to or from nanostructures |
US20040055777A1 (en) * | 2002-09-24 | 2004-03-25 | David Wiekhorst | Communication wire |
US7067867B2 (en) * | 2002-09-30 | 2006-06-27 | Nanosys, Inc. | Large-area nonenabled macroelectronic substrates and uses therefor |
WO2004032191A2 (en) | 2002-09-30 | 2004-04-15 | Nanosys, Inc. | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
US7051945B2 (en) * | 2002-09-30 | 2006-05-30 | Nanosys, Inc | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
AU2003283973B2 (en) | 2002-09-30 | 2008-10-30 | Oned Material Llc | Large-area nanoenabled macroelectronic substrates and uses therefor |
CA2499944A1 (en) | 2002-09-30 | 2004-04-15 | Nanosys, Inc. | Integrated displays using nanowire transistors |
WO2004034025A2 (en) | 2002-10-10 | 2004-04-22 | Nanosys, Inc. | Nano-chem-fet based biosensors |
TWI239606B (en) * | 2002-11-07 | 2005-09-11 | Kobe Steel Ltd | Heat spreader and semiconductor device and package using the same |
JP2004214478A (ja) * | 2003-01-07 | 2004-07-29 | Rohm Co Ltd | 半導体発光装置 |
WO2005022120A2 (en) | 2003-03-11 | 2005-03-10 | Nanosys, Inc. | Process for producing nanocrystals and nanocrystals produced thereby |
JP4100203B2 (ja) | 2003-03-14 | 2008-06-11 | ソニー株式会社 | 素子転写方法 |
US7253735B2 (en) | 2003-03-24 | 2007-08-07 | Alien Technology Corporation | RFID tags and processes for producing RFID tags |
US7491892B2 (en) | 2003-03-28 | 2009-02-17 | Princeton University | Stretchable and elastic interconnects |
US20050227389A1 (en) | 2004-04-13 | 2005-10-13 | Rabin Bhattacharya | Deformable organic devices |
US7074294B2 (en) | 2003-04-17 | 2006-07-11 | Nanosys, Inc. | Structures, systems and methods for joining articles and materials and uses therefor |
US20050038498A1 (en) * | 2003-04-17 | 2005-02-17 | Nanosys, Inc. | Medical device applications of nanostructured surfaces |
US7056409B2 (en) | 2003-04-17 | 2006-06-06 | Nanosys, Inc. | Structures, systems and methods for joining articles and materials and uses therefor |
US20040211458A1 (en) | 2003-04-28 | 2004-10-28 | General Electric Company | Tandem photovoltaic cell stacks |
JP4871726B2 (ja) | 2003-04-28 | 2012-02-08 | ナノシス・インク. | 超疎液性表面、その作製法及び用途 |
AU2003902270A0 (en) | 2003-05-09 | 2003-05-29 | Origin Energy Solar Pty Ltd | Separating and assembling semiconductor strips |
US7244326B2 (en) | 2003-05-16 | 2007-07-17 | Alien Technology Corporation | Transfer assembly for manufacturing electronic devices |
US7033961B1 (en) * | 2003-07-15 | 2006-04-25 | Rf Micro Devices, Inc. | Epitaxy/substrate release layer |
US7439158B2 (en) | 2003-07-21 | 2008-10-21 | Micron Technology, Inc. | Strained semiconductor by full wafer bonding |
US7091120B2 (en) * | 2003-08-04 | 2006-08-15 | Nanosys, Inc. | System and process for producing nanowire composites and electronic substrates therefrom |
WO2005015480A2 (en) | 2003-08-09 | 2005-02-17 | Alien Technology Corporation | Methods and apparatuses to identify devices |
CN1849713A (zh) * | 2003-09-08 | 2006-10-18 | 第四族半导体有限公司 | 固态白光发射器及使用其的显示器 |
US7029951B2 (en) * | 2003-09-12 | 2006-04-18 | International Business Machines Corporation | Cooling system for a semiconductor device and method of fabricating same |
JP2005093649A (ja) * | 2003-09-17 | 2005-04-07 | Oki Data Corp | 半導体複合装置、ledプリントヘッド、及び、それを用いた画像形成装置 |
JP2007507101A (ja) | 2003-09-24 | 2007-03-22 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体装置、半導体装置の製造方法、識別ラベル及び情報担体 |
JP4121928B2 (ja) | 2003-10-08 | 2008-07-23 | シャープ株式会社 | 太陽電池の製造方法 |
DE10349963A1 (de) * | 2003-10-24 | 2005-06-02 | Leonhard Kurz Gmbh & Co. Kg | Verfahren zur Herstellung einer Folie |
WO2005054119A2 (en) | 2003-12-01 | 2005-06-16 | The Board Of Trustees Of The University Of Illinois | Methods and devices for fabricating three-dimensional nanoscale structures |
US7381579B2 (en) * | 2004-02-26 | 2008-06-03 | Samsung Sdi Co., Ltd. | Donor sheet, method of manufacturing the same, method of manufacturing TFT using the donor sheet, and method of manufacturing flat panel display device using the donor sheet |
WO2005086557A1 (ja) * | 2004-03-03 | 2005-09-15 | Bridgestone Corporation | 電磁波シールド性光透過窓材、表示パネル及び太陽電池モジュールの製造方法 |
TWI299358B (en) | 2004-03-12 | 2008-08-01 | Hon Hai Prec Ind Co Ltd | Thermal interface material and method for making same |
JP5030388B2 (ja) | 2004-03-22 | 2012-09-19 | 株式会社半導体エネルギー研究所 | 薄膜集積回路の作製方法 |
US7052924B2 (en) | 2004-03-29 | 2006-05-30 | Articulated Technologies, Llc | Light active sheet and methods for making the same |
MXPA06011114A (es) * | 2004-03-29 | 2007-01-25 | Articulated Technologies Llc | Hoja luminosa fabricada de rodillo a rodillo y dispositivos encapsulados de circuito semiconductor. |
CN100383213C (zh) | 2004-04-02 | 2008-04-23 | 清华大学 | 一种热界面材料及其制造方法 |
US20080055581A1 (en) * | 2004-04-27 | 2008-03-06 | Rogers John A | Devices and methods for pattern generation by ink lithography |
WO2005104756A2 (en) | 2004-04-27 | 2005-11-10 | The Board Of Trustees Of The University Of Illinois | Composite patterning devices for soft lithography |
US20050247944A1 (en) * | 2004-05-05 | 2005-11-10 | Haque Ashim S | Semiconductor light emitting device with flexible substrate |
JP2005322858A (ja) | 2004-05-11 | 2005-11-17 | Shinko Electric Ind Co Ltd | 半導体装置の製造方法 |
US7943491B2 (en) | 2004-06-04 | 2011-05-17 | The Board Of Trustees Of The University Of Illinois | Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp |
US7521292B2 (en) | 2004-06-04 | 2009-04-21 | The Board Of Trustees Of The University Of Illinois | Stretchable form of single crystal silicon for high performance electronics on rubber substrates |
WO2005122285A2 (en) | 2004-06-04 | 2005-12-22 | The Board Of Trustees Of The University Of Illinois | Methods and devices for fabricating and assembling printable semiconductor elements |
US8217381B2 (en) | 2004-06-04 | 2012-07-10 | The Board Of Trustees Of The University Of Illinois | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
US7799699B2 (en) | 2004-06-04 | 2010-09-21 | The Board Of Trustees Of The University Of Illinois | Printable semiconductor structures and related methods of making and assembling |
US7425523B2 (en) | 2004-07-05 | 2008-09-16 | Dai Nippon Printing Co., Ltd. | Thermal transfer recording material and thermal transfer recording method |
US7687886B2 (en) * | 2004-08-19 | 2010-03-30 | Microlink Devices, Inc. | High on-state breakdown heterojunction bipolar transistor |
TW200628921A (en) | 2004-09-17 | 2006-08-16 | Hitachi Maxell | Microlens array, method of fabricating microlens array, and liquid crystal display apparatus with microlens array |
DE602004013338T2 (de) | 2004-11-10 | 2009-06-10 | Sony Deutschland Gmbh | Stempel für die sanfte Lithographie, insbesondere für das Mikro-Kontaktdruckverfahren und Verfahren zu seiner Herstellung |
JP4617846B2 (ja) | 2004-11-19 | 2011-01-26 | ソニー株式会社 | 半導体発光装置、その製造方法、及び画像表示装置の製造方法 |
US20060127817A1 (en) * | 2004-12-10 | 2006-06-15 | Eastman Kodak Company | In-line fabrication of curved surface transistors |
US7229901B2 (en) * | 2004-12-16 | 2007-06-12 | Wisconsin Alumni Research Foundation | Fabrication of strained heterojunction structures |
US20060132025A1 (en) * | 2004-12-22 | 2006-06-22 | Eastman Kodak Company | Flexible display designed for minimal mechanical strain |
US7374968B2 (en) * | 2005-01-28 | 2008-05-20 | Hewlett-Packard Development Company, L.P. | Method of utilizing a contact printing stamp |
WO2006104935A2 (en) | 2005-03-28 | 2006-10-05 | Goldeneye,Inc. | Light emitting diodes and methods of fabrication |
JP4809632B2 (ja) * | 2005-06-01 | 2011-11-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
TWI427802B (zh) * | 2005-06-02 | 2014-02-21 | Univ Illinois | 可印刷半導體結構及製造和組合之相關方法 |
WO2006130721A2 (en) * | 2005-06-02 | 2006-12-07 | The Board Of Trustees Of The University Of Illinois | Printable semiconductor structures and related methods of making and assembling |
US7763353B2 (en) | 2005-06-10 | 2010-07-27 | Ut-Battelle, Llc | Fabrication of high thermal conductivity arrays of carbon nanotubes and their composites |
WO2007000037A1 (en) | 2005-06-29 | 2007-01-04 | Mitchell, Richard, J. | Bendable high flux led array |
WO2007086903A2 (en) * | 2005-08-24 | 2007-08-02 | The Trustees Of Boston College | Apparatus and methods for solar energy conversion using nanocoax structures |
KR100758699B1 (ko) * | 2005-08-29 | 2007-09-14 | 재단법인서울대학교산학협력재단 | 고종횡비 나노구조물 형성방법 및 이를 이용한 미세패턴형성방법 |
JP2009528254A (ja) | 2006-03-03 | 2009-08-06 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | 空間的に配列したナノチューブ及びナノチューブアレイの作製方法 |
US7774929B2 (en) * | 2006-03-14 | 2010-08-17 | Regents Of The University Of Minnesota | Method of self-assembly on a surface |
US20070227586A1 (en) | 2006-03-31 | 2007-10-04 | Kla-Tencor Technologies Corporation | Detection and ablation of localized shunting defects in photovoltaics |
WO2008030666A2 (en) | 2006-07-25 | 2008-03-13 | The Board Of Trustees Of The University Of Illinois | Multispectral plasmonic crystal sensors |
DE102006037433B4 (de) | 2006-08-09 | 2010-08-19 | Ovd Kinegram Ag | Verfahren zur Herstellung eines Mehrschichtkörpers sowie Mehrschichtkörper |
KR101814683B1 (ko) | 2006-09-06 | 2018-01-05 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 2차원 인장 가능하고 구부릴 수 있는 장치 |
MY149190A (en) | 2006-09-20 | 2013-07-31 | Univ Illinois | Release strategies for making transferable semiconductor structures, devices and device components |
KR101519038B1 (ko) | 2007-01-17 | 2015-05-11 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 프린팅기반 어셈블리에 의해 제조되는 광학 시스템 |
US9061494B2 (en) | 2007-07-19 | 2015-06-23 | The Board Of Trustees Of The University Of Illinois | High resolution electrohydrodynamic jet printing for manufacturing systems |
CN102113089B (zh) | 2008-03-05 | 2014-04-23 | 伊利诺伊大学评议会 | 可拉伸和可折叠的电子器件 |
US8470701B2 (en) * | 2008-04-03 | 2013-06-25 | Advanced Diamond Technologies, Inc. | Printable, flexible and stretchable diamond for thermal management |
WO2010005707A1 (en) | 2008-06-16 | 2010-01-14 | The Board Of Trustees Of The University Of Illinois | Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates |
US8679888B2 (en) | 2008-09-24 | 2014-03-25 | The Board Of Trustees Of The University Of Illinois | Arrays of ultrathin silicon solar microcells |
EP2430652B1 (en) | 2009-05-12 | 2019-11-20 | The Board of Trustees of the University of Illionis | Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays |
US10441185B2 (en) | 2009-12-16 | 2019-10-15 | The Board Of Trustees Of The University Of Illinois | Flexible and stretchable electronic systems for epidermal electronics |
JP6046491B2 (ja) | 2009-12-16 | 2016-12-21 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | コンフォーマル電子機器を使用した生体内での電気生理学 |
US9936574B2 (en) | 2009-12-16 | 2018-04-03 | The Board Of Trustees Of The University Of Illinois | Waterproof stretchable optoelectronics |
US9057994B2 (en) | 2010-01-08 | 2015-06-16 | The Board Of Trustees Of The University Of Illinois | High resolution printing of charge |
CN102892356B (zh) | 2010-03-17 | 2016-01-13 | 伊利诺伊大学评议会 | 基于生物可吸收基质的可植入生物医学装置 |
US8562095B2 (en) | 2010-11-01 | 2013-10-22 | The Board Of Trustees Of The University Of Illinois | High resolution sensing and control of electrohydrodynamic jet printing |
US9442285B2 (en) | 2011-01-14 | 2016-09-13 | The Board Of Trustees Of The University Of Illinois | Optical component array having adjustable curvature |
WO2012158709A1 (en) | 2011-05-16 | 2012-11-22 | The Board Of Trustees Of The University Of Illinois | Thermally managed led arrays assembled by printing |
EP2713863B1 (en) | 2011-06-03 | 2020-01-15 | The Board of Trustees of the University of Illionis | Conformable actively multiplexed high-density surface electrode array for brain interfacing |
US9555644B2 (en) | 2011-07-14 | 2017-01-31 | The Board Of Trustees Of The University Of Illinois | Non-contact transfer printing |
KR101979354B1 (ko) | 2011-12-01 | 2019-08-29 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 프로그램 변형을 실행하도록 설계된 과도 장치 |
CN105283122B (zh) | 2012-03-30 | 2020-02-18 | 伊利诺伊大学评议会 | 可共形于表面的可安装于附肢的电子器件 |
US9613911B2 (en) | 2013-02-06 | 2017-04-04 | The Board Of Trustees Of The University Of Illinois | Self-similar and fractal design for stretchable electronics |
US10497633B2 (en) | 2013-02-06 | 2019-12-03 | The Board Of Trustees Of The University Of Illinois | Stretchable electronic systems with fluid containment |
US10840536B2 (en) | 2013-02-06 | 2020-11-17 | The Board Of Trustees Of The University Of Illinois | Stretchable electronic systems with containment chambers |
WO2014126927A1 (en) | 2013-02-13 | 2014-08-21 | The Board Of Trustees Of The University Of Illinois | Injectable and implantable cellular-scale electronic devices |
WO2014138465A1 (en) | 2013-03-08 | 2014-09-12 | The Board Of Trustees Of The University Of Illinois | Processing techniques for silicon-based transient devices |
WO2014165686A2 (en) | 2013-04-04 | 2014-10-09 | The Board Of Trustees Of The University Of Illinois | Purification of carbon nanotubes via selective heating |
US10292263B2 (en) | 2013-04-12 | 2019-05-14 | The Board Of Trustees Of The University Of Illinois | Biodegradable materials for multilayer transient printed circuit boards |
JP6578562B2 (ja) | 2013-04-12 | 2019-09-25 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | 無機及び有機の過渡電子デバイス |
EP3052017B1 (en) | 2013-10-02 | 2019-12-11 | The Board of Trustees of the University of Illionis | Organ mounted electronics |
CN111180381B (zh) | 2014-06-18 | 2021-08-27 | 艾克斯展示公司技术有限公司 | 用于控制可转印半导体结构的释放的***及方法 |
US9929053B2 (en) | 2014-06-18 | 2018-03-27 | X-Celeprint Limited | Systems and methods for controlling release of transferable semiconductor structures |
US10736551B2 (en) | 2014-08-11 | 2020-08-11 | The Board Of Trustees Of The University Of Illinois | Epidermal photonic systems and methods |
WO2016025468A2 (en) | 2014-08-11 | 2016-02-18 | The Board Of Trustees Of The University Of Illinois | Devices and related methods for epidermal characterization of biofluids |
KR20170041872A (ko) | 2014-08-11 | 2017-04-17 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 온도 및 열 전달 특성분석을 위한 표피 장치 |
EP2985645B1 (en) | 2014-08-13 | 2019-10-16 | Caliopa NV | Method for producing an integrated optical circuit |
US20170347891A1 (en) | 2014-10-01 | 2017-12-07 | The Board Of Trustees Of The University Of Illinois | Thermal Transport Characteristics of Human Skin Measured In Vivo Using Thermal Elements |
US10538028B2 (en) | 2014-11-17 | 2020-01-21 | The Board Of Trustees Of The University Of Illinois | Deterministic assembly of complex, three-dimensional architectures by compressive buckling |
US20170020402A1 (en) | 2015-05-04 | 2017-01-26 | The Board Of Trustees Of The University Of Illinois | Implantable and bioresorbable sensors |
BR112017025609A2 (pt) | 2015-06-01 | 2018-08-07 | The Board Of Trustees Of The University Of Illinois | sistemas eletrônicos miniaturizados com potência sem fio e capacidades de comunicação de campo próximo |
KR20180034342A (ko) | 2015-06-01 | 2018-04-04 | 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 | 대안적인 자외선 감지방법 |
US20180192952A1 (en) | 2015-07-02 | 2018-07-12 | The Board Of Trustees Of The University Of Illinois | Fully implantable soft medical devices for interfacing with biological tissue |
US11160489B2 (en) | 2015-07-02 | 2021-11-02 | The Board Of Trustees Of The University Of Illinois | Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics |
US9728934B2 (en) | 2015-08-31 | 2017-08-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Back-side-emitting vertical cavity surface emitting laser (VCSEL) wafer bonded to a heat-dissipation wafer, devices and methods |
US10925543B2 (en) | 2015-11-11 | 2021-02-23 | The Board Of Trustees Of The University Of Illinois | Bioresorbable silicon electronics for transient implants |
WO2017173339A1 (en) | 2016-04-01 | 2017-10-05 | The Board Of Trustees Of The University Of Illinois | Implantable medical devices for optogenetics |
WO2017218878A1 (en) | 2016-06-17 | 2017-12-21 | The Board Of Trustees Of The University Of Illinois | Soft, wearable microfluidic systems capable of capture, storage, and sensing of biofluids |
US11394720B2 (en) | 2019-12-30 | 2022-07-19 | Itron, Inc. | Time synchronization using trust aggregation |
-
2007
- 2007-10-31 KR KR1020097017067A patent/KR101519038B1/ko active IP Right Grant
- 2007-10-31 JP JP2009546361A patent/JP5700750B2/ja active Active
- 2007-10-31 EP EP07874095.8A patent/EP2104954B1/en active Active
- 2007-10-31 CN CN201510272379.6A patent/CN105826345B/zh active Active
- 2007-10-31 US US11/981,380 patent/US7972875B2/en active Active
- 2007-10-31 KR KR1020147033798A patent/KR101636750B1/ko active IP Right Grant
- 2007-10-31 CN CN2007800499821A patent/CN101617406B/zh active Active
- 2007-10-31 KR KR1020147005142A patent/KR101610885B1/ko active IP Right Grant
- 2007-10-31 MY MYPI20092671A patent/MY149292A/en unknown
- 2007-10-31 CN CN201510002775.7A patent/CN104637954B/zh active Active
- 2007-10-31 WO PCT/US2007/022959 patent/WO2008143635A1/en active Application Filing
- 2007-10-31 CN CN201110076041.5A patent/CN102176486B/zh active Active
-
2008
- 2008-01-15 TW TW104137759A patent/TWI609204B/zh active
- 2008-01-15 TW TW103134300A patent/TWI515463B/zh active
- 2008-01-15 TW TW106131415A patent/TWI654453B/zh active
- 2008-01-15 TW TW097101510A patent/TWI457618B/zh active
-
2011
- 2011-05-04 US US13/100,774 patent/US8722458B2/en active Active
-
2014
- 2014-03-12 JP JP2014049106A patent/JP5804610B2/ja active Active
- 2014-03-13 US US14/209,481 patent/US9117940B2/en active Active
-
2015
- 2015-07-15 US US14/800,363 patent/US9601671B2/en active Active
- 2015-08-28 JP JP2015169007A patent/JP6245767B2/ja active Active
-
2017
- 2017-01-10 US US15/402,718 patent/US10361180B2/en active Active
- 2017-01-10 US US15/402,684 patent/US10424572B2/en active Active
- 2017-01-10 US US15/402,723 patent/US10504882B2/en active Active
-
2019
- 2019-10-29 US US16/667,215 patent/US11309305B2/en active Active
-
2022
- 2022-03-09 US US17/690,952 patent/US20220199606A1/en active Pending
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6245767B2 (ja) | 印刷ベースの組立により製作される光学システム | |
US8679888B2 (en) | Arrays of ultrathin silicon solar microcells |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101001 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120628 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120703 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120926 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121003 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121225 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130917 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131212 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131219 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140114 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140121 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140214 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140221 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140312 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140715 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141113 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20141114 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20141215 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150120 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150216 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5700750 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |