JP5630345B2 - 駆動方法、露光方法及びデバイス製造方法 - Google Patents
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7007—Alignment other than original with workpiece
- G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
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- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Manufacturing & Machinery (AREA)
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Description
a.最小領域中心法(MZC):開口の輪郭を2つの同心円ではさんだ時、同心円の半径差が最小になる中心、b.最小二乗中心法(LSC):最小二乗平均円(基準円からの偏差の二乗和が最小となる円)の中心、c.最小外接円中心法(MCC):開口の輪郭に最小で外接する円の中心、d.最大内接円中心法(MIC):開口の輪郭に最大で内接する円の中心。
Claims (19)
- 投影光学系と液体とを介して露光ビームで基板を露光する露光装置内で前記基板を載置するステージを駆動する駆動方法であって、
前記ステージに着脱可能なプレートを搭載することと、
前記ステージに搭載された前記プレートの位置情報を取得することと、を含み、
前記位置情報は、前記プレートの外周エッジが他の部材と衝突しないように前記ステージを移動するために用いられる駆動方法。 - 請求項1に記載の駆動方法において、
前記ステージが移動される座標系を規定する位置計測系によって前記ステージの位置情報を計測しつつ、前記位置計測系と異なる検出装置によって前記プレートの一部を検出して、前記座標系における前記プレートの位置情報を取得する駆動方法。 - 請求項2に記載の駆動方法において、
前記ステージに搭載されたプレートの交換動作、及び前記プレートの一部を検出する検出動作の少なくとも一方は、前記ステージと異なるステージによって、前記液体によって前記投影光学系の下に形成される液浸領域を維持した状態で行われる駆動方法。 - 請求項3に記載の駆動方法において、
前記異なるステージは、前記投影光学系と前記液浸領域の液体とを介して前記露光ビームで露光される物体を載置可能、あるいは、前記投影光学系と前記液浸領域の液体とを介して前記露光ビームが照射される少なくとも1つの計測部材が設けられる駆動方法。 - 請求項1〜4のいずれか一項に記載の駆動方法において、
前記プレートはその一部に開口が形成され、
前記ステージは、前記プレートの開口内で前記基板を載置する駆動方法。 - 請求項5に記載の駆動方法において、
前記基板はその表面が前記プレートの上面とほぼ同一面となるように前記開口内に載置される駆動方法。 - 請求項1〜6のいずれか一項に記載の駆動方法において、
前記ステージは、前記液体によって前記投影光学系の下に形成される液浸領域を、前記プレートで維持可能である駆動方法。 - 請求項1〜7のいずれか一項に記載の駆動方法において、
前記プレートは、前記ステージ上に撥液面を形成する駆動方法。 - 請求項1〜8のいずれか一項に記載の駆動方法において、
前記プレートは、前記ステージ上に複数のピンを介して真空吸着保持される駆動方法。 - 請求項1〜9のいずれか一項に記載の駆動方法において、
前記プレートはその一部が前記ステージの外側に張り出して前記ステージに搭載される駆動方法。 - 請求項1〜10のいずれか一項に記載の駆動方法において、
前記プレートの位置情報として、前記プレートの外周エッジの位置情報が取得される駆動方法。 - 請求項11に記載の駆動方法において、
前記外周エッジの位置情報は、前記外周エッジが前記ステージと異なるステージと衝突しないように前記ステージと前記異なるステージとの少なくとも一方の位置を制御するために用いられる駆動方法。 - 請求項11に記載の駆動方法において、
前記ステージは、前記プレートに形成される開口内で前記基板を載置し、
前記開口の内周エッジの位置情報が取得される駆動方法。 - 請求項13に記載の駆動方法において、
前記内周エッジの位置情報は、前記ステージの上方に搬送される前記基板が前記開口内に載置されるように前記基板を前記ステージにロードするために用いられる駆動方法。 - 請求項14に記載の駆動方法において、
前記ロードにおいて、前記ステージの上方に前記基板を搬送する搬送系と前記ステージとの少なくとも一方の制御によって前記搬送された基板と前記ステージとの位置関係を設定するために、前記内周エッジの位置情報が用いられる駆動方法。 - 請求項15に記載の駆動方法において、
前記プレートと接触することなく前記基板がロードされるとともに、前記開口内に載置される基板の表面と前記プレートの上面との間に間隙が形成されるように、前記搬送された基板と前記ステージとの位置関係を設定するために、前記内周エッジの位置情報が用いられる駆動方法。 - 請求項13〜16のいずれか一項に記載の駆動方法において、
前記取得された内周エッジの位置情報から求まる前記開口の形状情報に基づいて、前記プレートの交換要否が判断される駆動方法。 - 投影光学系と液体とを介して露光ビームで基板を露光する露光方法であって、
請求項13〜17のいずれか一項に記載の駆動方法を用いて取得される、前記ステージに搭載されるプレートの前記開口の位置情報に基づいて、前記基板がその開口内に載置されるように搬送系を介して前記ステージにロードされる前記基板のロードを制御することを含み、
前記露光に際して、前記液体によって前記基板の一部に液浸領域が形成される露光方法。 - 請求項18に記載の露光方法を用いるリソグラフィ工程を含むデバイス製造方法。
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JP2014067492A Active JP5721064B2 (ja) | 2004-11-18 | 2014-03-28 | リソグラフィ投影装置、オフセットを決定するための方法、露光方法、並びにデバイス製造方法 |
JP2014258841A Expired - Fee Related JP5900763B2 (ja) | 2004-11-18 | 2014-12-22 | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2015225270A Expired - Fee Related JP5967393B2 (ja) | 2004-11-18 | 2015-11-18 | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2016004009A Expired - Fee Related JP6143135B2 (ja) | 2004-11-18 | 2016-01-13 | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2016123789A Expired - Fee Related JP6229766B2 (ja) | 2004-11-18 | 2016-06-22 | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2017096125A Expired - Fee Related JP6399321B2 (ja) | 2004-11-18 | 2017-05-15 | 露光装置及び露光方法、並びにデバイス製造方法 |
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US (12) | US8059260B2 (ja) |
EP (4) | EP1821336B1 (ja) |
JP (14) | JP4877653B2 (ja) |
KR (10) | KR101861949B1 (ja) |
CN (5) | CN104360582B (ja) |
HK (7) | HK1198210A1 (ja) |
IL (3) | IL183280A0 (ja) |
SG (4) | SG2014009179A (ja) |
TW (8) | TWI553703B (ja) |
WO (1) | WO2006054682A1 (ja) |
Cited By (1)
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JP2014131082A (ja) * | 2004-11-18 | 2014-07-10 | Nikon Corp | 露光装置 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014131082A (ja) * | 2004-11-18 | 2014-07-10 | Nikon Corp | 露光装置 |
JP2015111682A (ja) * | 2004-11-18 | 2015-06-18 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2016040624A (ja) * | 2004-11-18 | 2016-03-24 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
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