JP5589359B2 - 電気光学装置及び電子機器 - Google Patents
電気光学装置及び電子機器 Download PDFInfo
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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Description
(第1実施形態)
<1−1:液晶装置の全体構成>
先ず、図1及び図2を参照しながら、本実施形態に係る液晶装置1の全体構成を説明する。
次に、図3を参照しながら、液晶装置1の画像表示領域10aにおける電気的な構成を説明する。図3は、本実施形態に係る液晶装置1の画像表示領域10aを構成するマトリクス状に形成された複数の画素における各種素子、配線等の等価回路図である。
各々には、画素電極9、及び、本発明の「トランジスタ素子」の一例であるTFT30が形成されている。TFT30は、画素電極9に電気的に接続されており、液晶装置1の動作時において、画素電極9に対する画像信号の供給及び非供給を相互に切り替えるように、画素電極9をスイッチング制御する。画像信号が供給されるデータ線6は、TFT30のソース領域に電気的に接続されている。データ線6に書き込む画像信号S1、S2、…、Snは、この順に線順次に供給しても構わないし、互いに隣り合う複数のデータ線6同士に対して、グループ毎に供給するようにしてもよい。
次に、図4乃至図7を参照しながら、液晶装置1の画素の具体的な構成を説明する。図4は、本実施形態に係る液晶装置1の画像表示領域10aにおける、電気光学動作を行うために配置された電極及び配線等の位置関係を図式的に示した平面図である。図5及び図6は、画像表示領域10aの一部の構成を詳細に示した平面図である。図5及び図6の夫々は、TFTアレイ基板10上において互いに異なる層を実線で示しており、図4より若干広い領域における平面構造を示している。図7は、図4乃至図6の夫々におけるVII−VII´線断面図である。尚、図4乃至図7では、各層・各部材を図面上で認識可能な程度の大きさとするため、該各層・各部材ごとに縮尺を異ならしめてある。
次に、図8を参照しながら、本実施形態に係る液晶尚、装置1の変形例を説明する。図8は、本実施形態に係る液晶装置の変形例の構成を示した断面図であって、図7に対応する断面で変形例に係る液晶装置を切った部分断面図である。尚、以下では、液晶装置1と共通する部分に共通の参照符号を付し、その詳細な説明を省略する。
次に、第2実施形態に係る液晶装置について、図9から図11を参照して説明する。尚、第2実施形態は、上述の第1実施形態と比べて、一部の構成が異なり、その他の構成については概ね同様である。このため第2実施形態では、第1実施形態と異なる部分について詳細に説明し、その他の重複する部分については適宜説明を省略するものとする。
次に、図12を参照しながら、上述した液晶装置を、電子機器の一例であるプロジェクタにライトバルブとして適用した例を説明する。図12は、プロジェクタの構成例を示す平面図である。
Claims (9)
- 基板と、
前記基板の一方の面に設けられた画素電極と、
前記基板と前記画素電極との間に設けられた第1遮光膜と、
前記第1遮光膜と前記画素電極との間に設けられたトランジスタ素子と、
前記トランジスタ素子と前記画素電極との間に設けられた第2遮光膜と、
前記第2遮光膜と前記画素電極との間に設けられた透明導電膜と、
前記第2遮光膜と前記画素電極との間に設けられた透明な接続部と、
前記透明導電膜と前記画素電極との間に設けられた誘電体膜と、を有し、
前記トランジスタ素子は、
前記第2遮光膜及び前記画素電極と電気的に接続されると共に、
前記基板の一方の面に垂直な方向から見た平面視において、前記第1遮光膜及び前記第2遮光膜と重なる部分を含み、
前記画素電極は、光が透過可能な開口領域において、前記透明導電膜及び前記誘電体膜と重なることで蓄積容量を形成し、
前記透明導電膜は、前記基板の一方の面に垂直な方向から見た平面視において、開口部を有し、
前記透明な接続部は、前記基板の一方の面に垂直な方向から見た平面視において、前記開口部の内部に位置し、かつ、前記開口領域において、前記画素電極と電気的に接続される部分を有することを特徴とする電気光学装置。 - 請求項1に記載の電気光学装置において、
さらに、前記トランジスタ素子と前記画素電極とを電気的に接続する遮光性の中継層と、を有し、
前記遮光性の中継層は、前記基板の面に垂直な方向から見た平面視において、前記トランジスタ素子と重なる部分を有し、かつ、隣り合う2つの画素電極間の非開口領域において、前記透明な接続部と電気的に接続される部分を有することを特徴とする電気光学装置。 - 請求項1または2に記載の電気光学装置において、
前記誘電体膜は、アルミナを含むことを特徴とする電気光学装置。 - 請求項1乃至3のいずれかに記載の電気光学装置において、
前記透明な接続部は、前記透明導電膜と同一の層に位置していることを特徴とする電気光学装置。 - 請求項1乃至4のいずれかに記載の電気光学装置において、
前記開口部は、隣り合う2つの画素領域に渡って開口していることを特徴とする電気光学装置。 - 請求項1乃至5のいずれかに記載の電気光学装置において、
さらに、前記透明導電膜と前記画素電極の間、又は、前記透明な接続部と前記画素電極との間に容量分離膜を有することを特徴とする電気光学装置。 - 請求項6に記載の電気光学装置において、
前記容量分離膜は、前記開口領域において、容量分離膜開口部を備えることを特徴とする電気光学装置。 - 請求項2に記載の電気光学装置において、
前記トランジスタ素子の半導体層は、第1方向に沿って延在し、
前記遮光性の中継層は、前記第1方向と交差した第2方向に沿って延長する本体部と、
前記第1方向に沿って突出する突出部と、を含み、
前記半導体層は、チャネル部と、前記画素電極に電気的に接続するソースドレイン領域と、を含み、
前記遮光性の中継層は、前記基板の面に垂直な方向から見た平面視において、前記チャネル部及び前記ソースドレイン領域と重なる部分を有することを特徴とする電気光学装置。 - 請求項1から8の何れか一項に記載の電気光学装置を具備してなることを特徴とする電子機器。
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