JP5400910B2 - リソグラフィ投影装置 - Google Patents
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
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Description
−放射線の投影ビームを供給する放射線システムと、
−パターニング手段を支持する支持構造とを備え、パターニング手段は、所望のパターンに従って投影ビームにパターン形成する働きをし、さらに、
−基板を保持する基板テーブルと、
−パターン形成したビームを基板の標的部分に投影する投影システムと、
−前記投影システムの最終要素と、前記基板テーブル上に配置されたオブジェクトとの間の空間を、液体で少なくとも部分的に充填する液体供給システムとからなるリソグラフィ投影装置に関する。
−マスク。マスクの概念はリソグラフィでよく知られ、バイナリ、交互位相ずれ、および減衰位相ずれ、さらに様々な複合マスク・タイプなどのマスク・タイプを含む。このようなマスクを放射線ビームに配置すると、マスク上のパターンに従いマスクに衝突する放射線の選択的透過(透過性マスクの場合)または反射(反射性マスクの場合)が生じる。マスクの場合、支持構造は概ねマスク・テーブルであり、これによりマスクを入射放射ビームの所望の位置に保持でき、所望に応じてビームに対して移動できることが保証される。
−プログラマブル・ミラー・アレイ。このような装置の一例は、粘弾性制御層および反射性表面を有するマトリックス・アドレス指定可能表面である。このような装置の元となる原理は、(例えば)反射性表面のアドレス指定された区域は、屈折光として入射光を反射し、アドレス指定されない区域は非屈折光として入射光を反射することである。適切なフィルタを使用すると、前記非屈折光を反射ビームから除去し、屈折光のみを残すことができ、この方法で、ビームはマトリックス・アドレス指定可能表面のアドレス指定パターンに従ってパターン形成される。プログラマブル・ミラー・アレイの代替実施例は、微小なミラーのマトリックス構成を使用し、各ミラーは、局所化した適切な電界を与えるか、圧電起動手段を使用することによって軸線の周囲で個々に傾斜させることができる。この場合もミラーはマトリックス・アドレス指定可能であり、したがってアドレス指定されたミラーは、アドレス指定されないミラーとは異なる方向に放射ビームを反射し、この方法により、反射ビームはマトリックス・アドレス指定可能ミラーのアドレス指定パターンに従ってパターン形成される。必要なマトリックス・アドレス指定は、適切な電子的手段を使用して実施することができる。上述した状況の双方で、パターニング手段は、1つまたは複数のプログラマブル・ミラー・アレイを備えることができる。本明細書で言及するミラー・アレイに関する詳細な情報は、例えば米国特許第5,296,891号および米国特許第5,523,193号および国際PCT特許出願第98/38597号および第98/33096号で収集することができ、これらは参照により本明細書に組み込まれる。プログラマブル・ミラー・アレイの場合、前記支持構造は、必要に応じて固定するか動作可能なフレームまたはテーブルなどとして実現してもよい。
−プログラマブルLCDアレイ。このような構造の一例が米国特許第5,229,872号で与えられ、これは参照により本明細書に組み込まれる。上記と同様、この場合の支持構造は、必要に応じて固定するか動作可能なフレームまたはテーブルなどとして実現してもよい。
−少なくとも部分的に放射線感受性材料の層で覆われた基板を提供するステップと、
−放射線システムを使用して放射線の投影ビームを提供するステップと、
−放射線のパターン形成されたビームを放射線感受性材料の層の標的部分に投影するステップと、
−基板テーブル上のオブジェクトと、前記投影ステップで使用した投影システムの最終要素との間の空間を少なくとも部分的に充填するため、液体を提供するステップとを含み、
1次表面がオブジェクトの1次表面とほぼ同一平面上にある状態で、オブジェクトの縁の少なくとも一部を囲む縁密封部材を設け、前記液体を前記オブジェクトおよび/または縁密封部材の局所的区域に提供するか、
オブジェクトの縁を少なくとも部分的に囲む縁密封部材、および縁密封部材とオブジェクト間のギャップを横切って延在し、オブジェクトに接触するさらなる縁密封部材を設けるか、
オブジェクトの縁を少なくとも部分的に囲む縁密封部材を設け、オブジェクトの前記投影システムとは反対の側で、縁密封部材とオブジェクト間のギャップに真空または液体を与えるか、
液体がいずれかの側にある状態で、オブジェクトと投影システムの最終要素の間の空間に中間プレートを設けるか、
投影システムの最終要素と前記基板テーブル間の空間の境界の少なくとも一部に沿って延在する部材を設け、部材と投影システムの最終要素との間で基板テーブルから延在する毛管を設けることを特徴とする方法が提供される。
図1は、本発明の特定の実施例によるリソグラフィ投影装置を概略的に示す。装置は、
−この特定のケースでは放射線源LAも含む、放射線の投影ビームPB(DUV放射線など)を供給する放射線システムEx、ILと、
−マスクMA(レチクルなど)を保持するためにマスク・ホルダを設け、アイテムPLに対してマスクを正確に位置決めするための第1位置決め手段PMに接続された第1オブジェクト・テーブル(マスク・テーブル)MTと、
−基板W(レジスト被覆したシリコン・ウェーハなど)を保持するために基板ホルダを設け、アイテムPLに対して基板を正確に位置決めするための第2位置決め手段PWに接続された第2オブジェクト・テーブル(基板テーブル)WTと、
−マスクMAの照射部分を基板Wの標的部分C(例えば1つまたは複数のダイを備える)に撮像する投影システム(「レンズ」)PL(屈折システムなど)とを備える。
本明細書で示すように、装置は透過性タイプ(例えば透過性マスクを有する)である。しかし、概して例えば屈折タイプ(例えば屈折性マスクを有する)でもよい。あるいは、装置は、上述したようなタイプのプログラマブル・ミラー・アレイのような別種のパターニング手段を使用してもよい。
1.ステップ・モードでは、マスク・テーブルMTは基本的に静止状態に維持され、マスク像全体を1回で(つまり1つの「フラッシュ」で)標的部分Cに投影する。次に、ビームPBで異なる標的部分Cを照射できるよう、基板テーブルWTをxおよび/またはy方向にシフトさせる。
2.走査モードでは、基本的に同じシナリオが当てはまるが、1つの「フラッシュ」で所与の標的部分Cを露光しない。代わりに、マスク・テーブルMTは速度vで所与の方向(いわゆる「走査方向」、例えばy方向)に動作可能であり、したがって投影ビームPBがマスク像を走査して、それと同時に基板テーブルWTが速度V=Mvで同方向または逆方向に同時に移動し、ここでMはレンズPLの倍率(通常はM=1/4または1/5)である。この方法で、解像度を妥協することなく、比較的大きい標的部分Cを露光することができる。
第2実施例は図4から図6で図示され、以下の説明以外は第1実施例と同じ、または同様である。
第3実施例は図7に図示され、以下の説明以外は第1実施例と同じ、または同様である。
第4実施例は図8および図9に図示され、以下の説明以外は第1実施例と同じ、または同様である。
第5実施例は図109に図示され、以下の説明以外は第1実施例と同じ、または同様である。
図11は、以下の説明以外は第1実施例と同じ、または同様である本発明の第6実施例を示す。
本発明の第7実施例について、図12から図15に関して説明する。第7実施例は、以下の説明以外は第1実施例と同じ、または同様である。
図16は、以下の説明以外は第1実施例と同じ、または同様である本発明の第8実施例を示す。
第9実施例について図17に関して説明する。図17で示す解決法は、基板Wの縁部分の撮像に伴う問題の幾つかを回避するとともに、基板Wと同じ条件で透過像センサ(TIS)220を投影レンズPLで照射することができる。
図18は、本明細書で説明した他の任意の実施例に適切可能であり、突然の液体損の前に浸漬液が広がり得るギャップのサイズを増加させるのに効果的な液体供給システムの変形を示す。
h=(2σcosθ)/(rgρ)
ここでσは界面張力、θは液体と毛管w間の接触角、ρは液体の密度である。cosθをプラスにする(つまり毛管の内面をコーティングなどによって疎水性にする)と、毛管は、ギャップからの高さhの液体部分を支持することができ、したがってこれがまたがるギャップを大きくすることができる。
図19は、以下の説明以外は第1実施例と同じである第11実施例を示す。
第12実施例について、図20および図21に関して説明する。第12実施例では、基板テーブルWTに封止されるのはセンサ220である。図20および図21で図示した両方のバージョンで、縁密封部材117と基板220の縁との間のギャップに入るような浸漬液を全て除去するため、開口通路47および室44でギャップの近傍に真空46を設ける。
Claims (8)
- オブジェクトテーブル上のオブジェクトと投影システムとの間の空間を少なくとも部分的に液体で充填する液体供給システムと、
前記オブジェクトの縁を少なくとも部分的に囲み、前記投影システムに面して前記オブジェクトの1次表面とほぼ同一平面上にある1次表面を提供する縁密封部材と、
を有し、
前記オブジェクトテーブルは、
前記縁密封部材および前記オブジェクトの縁部分の近傍で、前記縁密封部材および前記オブジェクトの前記投影システムとは反対側にある疎水性層と、
前記縁密封部材と前記投影システムとは反対側にある前記オブジェクトとの間のギャップに真空を供給するよう配置された真空孔と、を備える、
リソグラフィ投影装置。 - 前記疎水性層は、ポリテトラフルオロエチレン、シリコンゴム又は他のプラスチック材料により形成される、
請求項1に記載のリソグラフィ投影装置。 - 前記液体が、前記疎水性層との間に90°より大きい接触角を有する、
請求項1又は2に記載のリソグラフィ投影装置。 - 前記液体供給システムが、前記オブジェクトおよび/または前記縁密封部材および/または前記オブジェクトテーブルの局所的区域に液体を供給する、請求項1〜3のいずれかに記載のリソグラフィ投影装置。
- 前記オブジェクトテーブルが、さらに、光軸の方向で前記縁密封部材および前記オブジェクトの両方に隣接するか、または少なくとも部分的に重畳するギャップ密封部材を備える、請求項1〜4のいずれかに記載のリソグラフィ投影装置。
- 前記ギャップ密封部材が、前記縁密封部材及び前記オブジェクトの前記1次表面と接触し、それによって前記縁密封部材と前記オブジェクトとの間のギャップに広がる、請求項5に記載のリソグラフィ投影装置。
- 撮像すべき前記オブジェクトが基板またはセンサである、請求項1〜6のいずれかに記載のリソグラフィ投影装置。
- 前記縁密封部材は前記オブジェクトテーブルの一体部品であるか、前記オブジェクトテーブルの残りの部分に対して動作可能に装着されている、請求項1〜7のいずれかに記載のリソグラフィ投影装置。
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EP02257822 | 2002-11-12 | ||
EP02257822.3 | 2002-11-12 | ||
EP03253636 | 2003-06-09 | ||
EP03253636.9 | 2003-06-09 |
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JP2007065471A Expired - Fee Related JP4553913B2 (ja) | 2002-11-12 | 2007-03-14 | リソグラフィ投影装置 |
JP2010102149A Expired - Fee Related JP5005793B2 (ja) | 2002-11-12 | 2010-04-27 | リソグラフィ投影装置 |
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JP2010102149A Expired - Fee Related JP5005793B2 (ja) | 2002-11-12 | 2010-04-27 | リソグラフィ投影装置 |
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US (10) | US7199858B2 (ja) |
JP (4) | JP3953460B2 (ja) |
KR (1) | KR100588124B1 (ja) |
CN (2) | CN100568101C (ja) |
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CN100568101C (zh) | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
US7372541B2 (en) * | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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