JP5259178B2 - 太陽電池製造のための半導体の薄層を堆積する方法および装置 - Google Patents
太陽電池製造のための半導体の薄層を堆積する方法および装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
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- H01L21/02104—Forming layers
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- H01L21/02612—Formation types
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Description
本出願は、参照により本明細書に組み込まれる、2004年3月15日に出願された先の米国仮出願第60/552,736号の利益を主張する。
本発明は電磁波検出器および光電変換用途のための半導体の薄膜を調製するための方法および装置に関する。
太陽電池は、日光を直接電力に変換する光電変換デバイスである。最も一般的な太陽電池材料は、単結晶または多結晶ウエハの形態にあるシリコンである。しかし、シリコン系太陽電池を用いて発生する電気のコストは、より伝統的な方法により発生する電気のコストより高い。したがって、1970年代初期以降、地上での使用のための太陽電池のコストを減少させるための努力がなされてきた。太陽電池のコストを下げる1つの方法は、大面積の基板上に太陽電池品質の吸収材料を堆積できる低コスト薄膜成長法を開発し、高い生産性で低コストの方法を用いてこれらのデバイスを製造することである。
本発明は、様々な実施形態において、巨視的ならびに微視的な組成均一性を有する高品質で、緻密で、良好に接着するIBIIIAVIA族化合物薄膜を作るための低コスト堆積技術を有利に提供する。
本発明は、重要な製造性および歩留りの問題、たとえば微視的組成の制御および基板への半導体吸収膜の接着に対処することにより、先行技術の欠点を克服する。また、本発明は薄膜太陽電池の低コスト製造も可能とする。
Claims (16)
- 基材上にIBIIIAVIA族半導体層を成長させる方法であって、
基材上にIB族材料の膜を堆積し、および少なくとも1つのIIIA族材料の層を堆積し、前記膜および少なくとも1つの層の両方ともその中に実質的な量のVIA族材料を含まない工程と、
炉を用いてIB族材料の膜および少なくとも1つのIIIA族材料の層を混合して、実質的な量のVIA族材料を含まない混合層を形成する工程と、
混合層上に、20〜250nmの範囲の膜厚を有するIIIA族材料の副層およびIB族材料の副層の少なくとも1つを含む薄い金属膜を形成する工程と、
混合層および金属膜をVIA族材料と反応させてIBIIIAVIA族半導体層を成長させる工程と
を含む方法。 - 混合層上に金属膜を形成する工程はIIIA族材料の副層として第1のIIIA族材料の層および別のIIIA族材料の層を形成する工程を含む請求項1記載の方法。
- 混合工程はIB族材料の膜および少なくとも1つのIIIA族材料の層を摂氏50〜350度の範囲の温度に加熱し、加熱工程を2〜600秒の時間実施し、混合層を全体にわたって実質的に合金化し、それにより実質的に均一な微視的組成を達成する請求項1記載の方法。
- 混合層におけるIB族材料対IIIA族材料のモル比が1.0より大きい請求項3記載の方法。
- さらに、形成工程の後に混合層および金属膜をアニーリングしてアニール層を作る工程を含み、アニーリング工程を摂氏50〜350度の温度で実施する請求項1記載の方法。
- さらに、堆積、混合、形成、およびアニーリングの工程を少なくとも1回繰り返して前駆体層を形成する請求項5記載の方法。
- 堆積および形成の工程をおのおの電着を用いて実施し、VIA族材料はセレンおよび硫黄の少なくとも1つを含む請求項1記載の方法。
- 基材上にCu(In,Ga)(Se,S)2半導体層を成長させる方法であって、
基材上に銅の膜を堆積し、ならびにインジウムの層およびガリウムの層の少なくとも1つを堆積し、前記膜および少なくとも1つの層の両方ともその中に実質的な量のVIA族材料を含まない工程と、
炉を用いて銅の膜ならびにインジウムの層およびガリウムの層の少なくとも1つを混合して、実質的な量のVIA族材料を含まない混合層を形成する工程と、
混合層上にインジウム副層、ガリウム副層および銅副層の少なくとも1つを含む薄い金属膜を形成し、前記金属膜は20〜250nmの範囲の膜厚を有する工程と
混合層および金属膜をVIA族材料と反応させてIBIIIAVIA族半導体層を成長させる工程と
を含む方法。 - 混合工程は銅の膜ならびにインジウムの層およびガリウムの層の少なくとも1つを摂氏50〜350度の範囲の温度に加熱する工程を含み、混合層におけるCu/(In+Ga)のモル比が1.0より大きい請求項8記載の方法。
- 堆積工程は基材上に銅の膜ならびにインジウムの層およびガリウムの層の両方を堆積し、混合工程は銅の膜、インジウムの層およびガリウムの層を混合して混合層を形成し、金属膜はインジウム副層およびガリウム副層および銅副層を含み、混合層および金属膜を反応させる工程は混合層および金属膜を硫黄およびセレンの少なくとも1つと反応させてCu(In,Ga)(Se,S)2半導体層を成長させる請求項8記載の方法。
- 混合層および金属膜を反応させる工程は混合層および金属膜を硫黄およびセレンの少なくとも1つと反応させてCu(In,Ga)(Se,S)2半導体層を成長させる請求項8記載の方法。
- 堆積工程は基材上に銅の膜およびインジウムの層を堆積し、混合層における銅対インジウムのモル比が1.22以上である請求項8記載の方法。
- 金属膜はガリウム副層を含み、混合層および金属膜を反応させる工程は混合層および金属膜を硫黄およびセレンの少なくとも1つと反応させてCu(In,Ga)(Se,S)2半導体層を成長させる請求項12記載の方法。
- 金属膜は銅副層およびガリウム副層を含み、混合層および金属膜を反応させる工程は混合層および金属膜を硫黄およびセレンの少なくとも1つと反応させてCu(In,Ga)(Se,S)2半導体層を成長させる請求項12記載の方法。
- 堆積工程は基材上銅の膜およびガリウムの層を堆積し、混合層におけるCu/Gaのモル比が1以上であり、金属膜がインジウム副層を含み、混合層および金属膜を反応させる工程は混合層および金属膜を硫黄およびセレンの少なくとも1つと反応させてCu(In,Ga)(Se,S)2半導体層を成長させる請求項8記載の方法。
- 堆積および形成の工程をおのおの電着を用いて実施する請求項8記載の方法。
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Families Citing this family (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005010999A1 (en) * | 2003-07-26 | 2005-02-03 | In-Solar-Tech Co., Ltd. | Method for manufacturing absorber layers for solar cell |
US8329501B1 (en) | 2004-02-19 | 2012-12-11 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles |
US7306823B2 (en) | 2004-09-18 | 2007-12-11 | Nanosolar, Inc. | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells |
US7604843B1 (en) | 2005-03-16 | 2009-10-20 | Nanosolar, Inc. | Metallic dispersion |
US8372734B2 (en) | 2004-02-19 | 2013-02-12 | Nanosolar, Inc | High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles |
US20070163642A1 (en) * | 2004-02-19 | 2007-07-19 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from inter-metallic microflake articles |
US7700464B2 (en) * | 2004-02-19 | 2010-04-20 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from nanoflake particles |
US8846141B1 (en) | 2004-02-19 | 2014-09-30 | Aeris Capital Sustainable Ip Ltd. | High-throughput printing of semiconductor precursor layer from microflake particles |
US7605328B2 (en) * | 2004-02-19 | 2009-10-20 | Nanosolar, Inc. | Photovoltaic thin-film cell produced from metallic blend using high-temperature printing |
US20070169809A1 (en) * | 2004-02-19 | 2007-07-26 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides |
US8309163B2 (en) | 2004-02-19 | 2012-11-13 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material |
US20070163641A1 (en) * | 2004-02-19 | 2007-07-19 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles |
US20070163639A1 (en) * | 2004-02-19 | 2007-07-19 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from microflake particles |
US7663057B2 (en) | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
US8623448B2 (en) | 2004-02-19 | 2014-01-07 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles |
US7736940B2 (en) * | 2004-03-15 | 2010-06-15 | Solopower, Inc. | Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication |
JP5259178B2 (ja) | 2004-03-15 | 2013-08-07 | ソロパワー、インコーポレイテッド | 太陽電池製造のための半導体の薄層を堆積する方法および装置 |
WO2005098968A1 (ja) * | 2004-04-09 | 2005-10-20 | Honda Motor Co., Ltd. | カルコパイライト型薄膜太陽電池用光吸収層の製造方法 |
US7582506B2 (en) * | 2005-03-15 | 2009-09-01 | Solopower, Inc. | Precursor containing copper indium and gallium for selenide (sulfide) compound formation |
US20070093006A1 (en) * | 2005-10-24 | 2007-04-26 | Basol Bulent M | Technique For Preparing Precursor Films And Compound Layers For Thin Film Solar Cell Fabrication And Apparatus Corresponding Thereto |
US7713773B2 (en) | 2005-11-02 | 2010-05-11 | Solopower, Inc. | Contact layers for thin film solar cells employing group IBIIIAVIA compound absorbers |
EP1992010A2 (en) * | 2006-02-23 | 2008-11-19 | Van Duren, Jeroen K.J. | High-throughput printing of chalcogen layer and the use of an inter-metallic material |
US20070227633A1 (en) * | 2006-04-04 | 2007-10-04 | Basol Bulent M | Composition control for roll-to-roll processed photovoltaic films |
US7736913B2 (en) | 2006-04-04 | 2010-06-15 | Solopower, Inc. | Composition control for photovoltaic thin film manufacturing |
US20080023059A1 (en) * | 2006-07-25 | 2008-01-31 | Basol Bulent M | Tandem solar cell structures and methods of manufacturing same |
WO2008049103A2 (en) * | 2006-10-19 | 2008-04-24 | Solopower, Inc. | Roll-to-roll electroplating for photovoltaic film manufacturing |
US9147778B2 (en) * | 2006-11-07 | 2015-09-29 | First Solar, Inc. | Photovoltaic devices including nitrogen-containing metal contact |
US20080169025A1 (en) * | 2006-12-08 | 2008-07-17 | Basol Bulent M | Doping techniques for group ibiiiavia compound layers |
US7825329B2 (en) * | 2007-01-03 | 2010-11-02 | Solopower, Inc. | Thin film solar cell manufacturing and integration |
US8066840B2 (en) * | 2007-01-22 | 2011-11-29 | Solopower, Inc. | Finger pattern formation for thin film solar cells |
US8648253B1 (en) | 2010-10-01 | 2014-02-11 | Ascent Solar Technologies, Inc. | Machine and process for continuous, sequential, deposition of semiconductor solar absorbers having variable semiconductor composition deposited in multiple sublayers |
US8465589B1 (en) | 2009-02-05 | 2013-06-18 | Ascent Solar Technologies, Inc. | Machine and process for sequential multi-sublayer deposition of copper indium gallium diselenide compound semiconductors |
US8779283B2 (en) | 2007-11-29 | 2014-07-15 | General Electric Company | Absorber layer for thin film photovoltaics and a solar cell made therefrom |
US8613973B2 (en) * | 2007-12-06 | 2013-12-24 | International Business Machines Corporation | Photovoltaic device with solution-processed chalcogenide absorber layer |
US20090188808A1 (en) * | 2008-01-29 | 2009-07-30 | Jiaxiong Wang | Indium electroplating baths for thin layer deposition |
US8980008B2 (en) * | 2008-04-15 | 2015-03-17 | Hanergy Hi-Tech Power (Hk) Limited | Apparatus and methods for manufacturing thin-film solar cells |
US8207012B2 (en) * | 2008-04-28 | 2012-06-26 | Solopower, Inc. | Method and apparatus for achieving low resistance contact to a metal based thin film solar cell |
US8092667B2 (en) * | 2008-06-20 | 2012-01-10 | Solopower, Inc. | Electroplating method for depositing continuous thin layers of indium or gallium rich materials |
DE102008024230A1 (de) * | 2008-05-19 | 2009-11-26 | Avancis Gmbh & Co. Kg | Schichtsystem für Solarzellen |
CN102292817A (zh) * | 2008-11-25 | 2011-12-21 | 第一太阳能有限公司 | 包括铜铟镓硒的光伏器件 |
WO2010065955A1 (en) * | 2008-12-05 | 2010-06-10 | Solopower, Inc. | Method and apparatus for forming contact layers for continuous workpieces |
US20100147383A1 (en) * | 2008-12-17 | 2010-06-17 | Carey James E | Method and apparatus for laser-processing a semiconductor photovoltaic apparatus |
TWI418047B (zh) * | 2009-01-07 | 2013-12-01 | Ind Tech Res Inst | Ib-iiia-via2化合物半導體薄膜之製造裝置 |
CN101807620B (zh) * | 2009-02-17 | 2015-05-13 | 通用电气公司 | 用于薄膜光伏的吸收层及由其制成的太阳能电池 |
AU2009200640B2 (en) * | 2009-02-18 | 2015-02-05 | General Electric Company | Absorber layer for thin film photovoltaics and a solar cell made therefrom |
US8110738B2 (en) | 2009-02-20 | 2012-02-07 | Miasole | Protective layer for large-scale production of thin-film solar cells |
US8115095B2 (en) * | 2009-02-20 | 2012-02-14 | Miasole | Protective layer for large-scale production of thin-film solar cells |
EP2221876A1 (en) | 2009-02-24 | 2010-08-25 | General Electric Company | Absorber layer for thin film photovoltaic cells and a solar cell made therefrom |
JP5260373B2 (ja) * | 2009-03-24 | 2013-08-14 | 本田技研工業株式会社 | 薄膜太陽電池の製造方法 |
US20100255660A1 (en) * | 2009-04-07 | 2010-10-07 | Applied Materials, Inc. | Sulfurization or selenization in molten (liquid) state for the photovoltaic applications |
US7785921B1 (en) | 2009-04-13 | 2010-08-31 | Miasole | Barrier for doped molybdenum targets |
US8134069B2 (en) | 2009-04-13 | 2012-03-13 | Miasole | Method and apparatus for controllable sodium delivery for thin film photovoltaic materials |
US7897020B2 (en) * | 2009-04-13 | 2011-03-01 | Miasole | Method for alkali doping of thin film photovoltaic materials |
US20100258444A1 (en) * | 2009-04-14 | 2010-10-14 | Reel Solar, Inc. | Apparatus and methods for chemical electrodeposition on a substrate for solar cell fabrication |
JP5643524B2 (ja) * | 2009-04-14 | 2014-12-17 | 株式会社コベルコ科研 | Cu−Ga合金スパッタリングターゲットおよびその製造方法 |
US20110177622A1 (en) * | 2009-12-28 | 2011-07-21 | Global Solar Energy, Inc. | Apparatus and methods of mixing and depositing thin film photovoltaic compositions |
US8418418B2 (en) | 2009-04-29 | 2013-04-16 | 3Form, Inc. | Architectural panels with organic photovoltaic interlayers and methods of forming the same |
US9284639B2 (en) * | 2009-07-30 | 2016-03-15 | Apollo Precision Kunming Yuanhong Limited | Method for alkali doping of thin film photovoltaic materials |
KR101631970B1 (ko) * | 2009-07-31 | 2016-06-21 | 삼성에스디아이 주식회사 | 박막 태양 전지의 제조방법 |
US20110067998A1 (en) * | 2009-09-20 | 2011-03-24 | Miasole | Method of making an electrically conductive cadmium sulfide sputtering target for photovoltaic manufacturing |
FR2951022B1 (fr) * | 2009-10-07 | 2012-07-27 | Nexcis | Fabrication de couches minces a proprietes photovoltaiques, a base d'un alliage de type i-iii-vi2, par electro-depots successifs et post-traitement thermique. |
US8709335B1 (en) | 2009-10-20 | 2014-04-29 | Hanergy Holding Group Ltd. | Method of making a CIG target by cold spraying |
US8709548B1 (en) | 2009-10-20 | 2014-04-29 | Hanergy Holding Group Ltd. | Method of making a CIG target by spray forming |
KR20110060139A (ko) * | 2009-11-30 | 2011-06-08 | 삼성전자주식회사 | 태양 전지 제조 방법 |
WO2011084171A1 (en) * | 2009-12-17 | 2011-07-14 | Precursor Energetics, Inc. | Molecular precursors for optoelectronics |
CN102741459A (zh) * | 2009-12-18 | 2012-10-17 | 索罗能源公司 | 用于沉积含铜-铟-镓的薄膜的电镀方法和化学物 |
US20110162696A1 (en) * | 2010-01-05 | 2011-07-07 | Miasole | Photovoltaic materials with controllable zinc and sodium content and method of making thereof |
FR2955428B1 (fr) * | 2010-01-15 | 2013-09-13 | Nexcis | Fabrication d'une structure multicouche pour des applications photovoltaiques a partir de conditions d'electrolyse perfectionnees. |
JP5389253B2 (ja) * | 2010-03-05 | 2014-01-15 | 株式会社東芝 | 化合物薄膜太陽電池とその製造方法 |
KR20110128580A (ko) * | 2010-05-24 | 2011-11-30 | 삼성전자주식회사 | 태양 전지 제조 방법 |
US20120034734A1 (en) * | 2010-08-05 | 2012-02-09 | Aventa Technologies Llc | System and method for fabricating thin-film photovoltaic devices |
US20120055612A1 (en) * | 2010-09-02 | 2012-03-08 | International Business Machines Corporation | Electrodeposition methods of gallium and gallium alloy films and related photovoltaic structures |
JP2012079997A (ja) * | 2010-10-05 | 2012-04-19 | Kobe Steel Ltd | 化合物半導体薄膜太陽電池用光吸収層の製造方法、およびIn−Cu合金スパッタリングターゲット |
US9169548B1 (en) | 2010-10-19 | 2015-10-27 | Apollo Precision Fujian Limited | Photovoltaic cell with copper poor CIGS absorber layer and method of making thereof |
US7935558B1 (en) | 2010-10-19 | 2011-05-03 | Miasole | Sodium salt containing CIG targets, methods of making and methods of use thereof |
US8048707B1 (en) | 2010-10-19 | 2011-11-01 | Miasole | Sulfur salt containing CIG targets, methods of making and methods of use thereof |
US8426725B2 (en) | 2010-12-13 | 2013-04-23 | Ascent Solar Technologies, Inc. | Apparatus and method for hybrid photovoltaic device having multiple, stacked, heterogeneous, semiconductor junctions |
JP5655669B2 (ja) * | 2011-03-31 | 2015-01-21 | Tdk株式会社 | 半導体層の製造方法、及び、太陽電池の製造方法 |
KR101154774B1 (ko) | 2011-04-08 | 2012-06-18 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
TWI538235B (zh) | 2011-04-19 | 2016-06-11 | 弗里松股份有限公司 | 薄膜光伏打裝置及製造方法 |
KR101374690B1 (ko) | 2011-11-16 | 2014-03-31 | 한국생산기술연구원 | Cigs 태양전지용 철-니켈 합금 금속 포일 기판재 |
CN102368512B (zh) * | 2011-11-16 | 2013-06-19 | 上海大学 | 电化学和固体硫化法在基片上制备CuInS2的方法 |
FR2983642B1 (fr) * | 2011-12-05 | 2014-01-03 | Nexcis | Interface perfectionnee entre une couche i-iii-vi2 et une couche de contact arriere, dans une cellule photovoltaique. |
US10043921B1 (en) | 2011-12-21 | 2018-08-07 | Beijing Apollo Ding Rong Solar Technology Co., Ltd. | Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof |
EP2936551A1 (en) | 2012-12-21 | 2015-10-28 | Flisom AG | Fabricating thin-film optoelectronic devices with added potassium |
KR101564961B1 (ko) * | 2013-04-02 | 2015-11-02 | 한국에너지기술연구원 | 황동광계 광흡수층의 형성방법 |
KR102076544B1 (ko) * | 2013-05-10 | 2020-02-12 | 에스케이이노베이션 주식회사 | 광흡수층의 제조방법 |
JP2015061062A (ja) * | 2013-09-20 | 2015-03-30 | 株式会社東芝 | 光電変換素子の製造方法 |
KR101815277B1 (ko) * | 2013-11-15 | 2018-01-05 | 나노코 테크놀로지스 리미티드 | 구리가 풍부한 구리 인듐 (갈륨) 디셀레나이드/디설파이드 나노 입자의 제조 |
US20150162468A1 (en) * | 2013-12-06 | 2015-06-11 | Nanoco Technologies Ltd. | Core-Shell Nanoparticles for Photovoltaic Absorber Films |
US9947807B2 (en) * | 2014-02-06 | 2018-04-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Solar module with wireless power transfer |
KR20150118260A (ko) * | 2014-04-11 | 2015-10-22 | 일진머티리얼즈 주식회사 | 광흡수층, 광흡수층의 제조 방법, 그리고 이를 이용한 태양전지 및 전자기기 |
EP2947682A1 (en) * | 2014-05-20 | 2015-11-25 | IMEC vzw | Method for forming chalcogenide layers |
TWI677105B (zh) | 2014-05-23 | 2019-11-11 | 瑞士商弗里松股份有限公司 | 製造薄膜光電子裝置之方法及可藉由該方法獲得的薄膜光電子裝置 |
TWI661991B (zh) | 2014-09-18 | 2019-06-11 | 瑞士商弗里松股份有限公司 | 用於製造薄膜裝置之自組裝圖案化 |
HUE053775T2 (hu) | 2016-02-11 | 2021-07-28 | Flisom Ag | Önszervezõdõ mintázódás vékonyréteg eszközök gyártására |
US10658532B2 (en) | 2016-02-11 | 2020-05-19 | Flisom Ag | Fabricating thin-film optoelectronic devices with added rubidium and/or cesium |
KR102611804B1 (ko) * | 2019-10-25 | 2023-12-08 | 에이치디한국조선해양 주식회사 | 캐비테이션 터널을 이용한 내침식 평가 시험장치 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US451108A (en) * | 1891-04-28 | Adjustable rest for holding electric lamps suspended | ||
US3721938A (en) * | 1971-12-23 | 1973-03-20 | Tyco Laboratories Inc | Cadmium telluride devices with non-diffusing contacts |
US4367125A (en) * | 1979-03-21 | 1983-01-04 | Republic Steel Corporation | Apparatus and method for plating metallic strip |
US4492811A (en) * | 1983-08-01 | 1985-01-08 | Union Oil Company Of California | Heterojunction photovoltaic device |
US4581108A (en) | 1984-01-06 | 1986-04-08 | Atlantic Richfield Company | Process of forming a compound semiconductive material |
US4798660A (en) * | 1985-07-16 | 1989-01-17 | Atlantic Richfield Company | Method for forming Cu In Se2 films |
JP2975693B2 (ja) * | 1990-09-03 | 1999-11-10 | 株式会社富士電機総合研究所 | カルコパイライト型化合物薄膜の製造方法 |
JPH0539562A (ja) * | 1991-08-06 | 1993-02-19 | Fuji Electric Corp Res & Dev Ltd | CuInSe2 薄膜の形成方法 |
JP3064701B2 (ja) | 1992-10-30 | 2000-07-12 | 松下電器産業株式会社 | カルコパイライト型化合物薄膜の製造方法 |
US5436204A (en) * | 1993-04-12 | 1995-07-25 | Midwest Research Institute | Recrystallization method to selenization of thin-film Cu(In,Ga)Se2 for semiconductor device applications |
CH687112A5 (fr) | 1993-06-08 | 1996-09-13 | Yazaki Corp | Procédé pour déposer un précurseur du composé CuInSe(2). |
JP2806469B2 (ja) | 1993-09-16 | 1998-09-30 | 矢崎総業株式会社 | 太陽電池吸収層の製造方法 |
JP3089994B2 (ja) | 1995-07-26 | 2000-09-18 | 矢崎総業株式会社 | 銅−インジウム−硫黄−セレン薄膜の作製方法、及び銅−インジウム−硫黄−セレン系カルコパイライト結晶の製造方法 |
US5730852A (en) | 1995-09-25 | 1998-03-24 | Davis, Joseph & Negley | Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells |
US5804466A (en) * | 1996-03-06 | 1998-09-08 | Canon Kabushiki Kaisha | Process for production of zinc oxide thin film, and process for production of semiconductor device substrate and process for production of photoelectric conversion device using the same film |
JP2922466B2 (ja) | 1996-08-29 | 1999-07-26 | 時夫 中田 | 薄膜太陽電池 |
JP3249408B2 (ja) | 1996-10-25 | 2002-01-21 | 昭和シェル石油株式会社 | 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置 |
JPH114009A (ja) * | 1997-06-12 | 1999-01-06 | Yamaha Corp | 太陽電池の製造方法 |
CN1087872C (zh) * | 1998-01-16 | 2002-07-17 | 中国地质大学(北京) | 制备CuInSe2半导体薄膜的溶胶-凝胶-Se化工艺 |
JP2000297397A (ja) * | 1999-02-10 | 2000-10-24 | Canon Inc | 電析方法 |
DE19921515A1 (de) * | 1999-05-10 | 2000-11-30 | Ist Inst Fuer Solartechnologie | Dünnschichtsolarzelle auf der Basis der Ia/IIIb/VIa- Verbindungshalbleiter und Verfahren zu ihrer Herstellung |
DE19956735B4 (de) | 1999-11-25 | 2008-08-21 | Shell Erneuerbare Energien Gmbh | Dünnfilmsolarzelle mit einer Chalkopyritverbindung und einer Titan und Sauerstoff enthaltenden Verbindung |
WO2002084708A2 (en) | 2001-04-16 | 2002-10-24 | Basol Bulent M | Method of forming semiconductor compound film for fabrication of electronic device and film produced by same |
JP2002329877A (ja) | 2001-04-27 | 2002-11-15 | National Institute Of Advanced Industrial & Technology | Cu(Ga及び(又は)In)Se2薄膜層、Cu(InGa)(S、Se)2薄膜層、太陽電池、Cu(Ga及び(又は)In)Se2薄膜層の形成方法 |
JP3876440B2 (ja) * | 2002-02-14 | 2007-01-31 | 本田技研工業株式会社 | 光吸収層の作製方法 |
WO2004032189A2 (en) | 2002-09-30 | 2004-04-15 | Miasolé | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
JP5259178B2 (ja) | 2004-03-15 | 2013-08-07 | ソロパワー、インコーポレイテッド | 太陽電池製造のための半導体の薄層を堆積する方法および装置 |
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US20050202589A1 (en) | 2005-09-15 |
US8192594B2 (en) | 2012-06-05 |
WO2005089330A3 (en) | 2007-05-03 |
CN101894881A (zh) | 2010-11-24 |
KR101115484B1 (ko) | 2012-02-27 |
EP1749309A2 (en) | 2007-02-07 |
KR20070097297A (ko) | 2007-10-04 |
JP2007529907A (ja) | 2007-10-25 |
US20080190761A1 (en) | 2008-08-14 |
WO2005089330A2 (en) | 2005-09-29 |
US7374963B2 (en) | 2008-05-20 |
CN101027749A (zh) | 2007-08-29 |
CN100573812C (zh) | 2009-12-23 |
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