JP5002628B2 - 電力用半導体素子 - Google Patents
電力用半導体素子 Download PDFInfo
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- JP5002628B2 JP5002628B2 JP2009194841A JP2009194841A JP5002628B2 JP 5002628 B2 JP5002628 B2 JP 5002628B2 JP 2009194841 A JP2009194841 A JP 2009194841A JP 2009194841 A JP2009194841 A JP 2009194841A JP 5002628 B2 JP5002628 B2 JP 5002628B2
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- 239000004065 semiconductor Substances 0.000 title claims description 223
- 239000012535 impurity Substances 0.000 claims description 28
- 238000009826 distribution Methods 0.000 claims description 10
- 125000004122 cyclic group Chemical group 0.000 claims description 2
- 230000004048 modification Effects 0.000 description 35
- 238000012986 modification Methods 0.000 description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 28
- 229910052814 silicon oxide Inorganic materials 0.000 description 28
- 230000000694 effects Effects 0.000 description 16
- 230000015556 catabolic process Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 235000000621 Bidens tripartita Nutrition 0.000 description 1
- 240000004082 Bidens tripartita Species 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 208000006637 fused teeth Diseases 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H01L29/772—Field effect transistors
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- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L29/063—Reduced surface field [RESURF] pn-junction structures
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Description
本発明の第1の実施形態に係る電力用半導体素子について、図1を参照しながら説明する。
本発明の第2の実施形態に係る電力用半導体素子について、図3を参照しながら説明する。第1の実施形態の電力用半導体素子1との違いは、絶縁膜が平面視で破線状のパターンを有する点である。なお、第1の実施形態と同一構成部分には同一の符号を付して、その説明は省略する。
本発明の第3の実施形態に係る電力用半導体素子について、図11を参照しながら説明する。第2の実施形態の電力用半導体素子3との違いは、絶縁膜が、n型ピラー層とp型ピラー層との境界領域にある点である。なお、第1、第2の実施形態及び変形例と同一構成部分には同一の符号を付して、その説明は省略する。
本発明の第4の実施形態に係る電力用半導体素子について、図13を参照しながら説明する。第1の実施形態の電力用半導体素子1との違いは、絶縁膜が、p型ベース層及びp型ピラー層の中に配設され、圧縮応力を印加可能である点である。なお、第1乃至第3の実施形態及び変形例と同一構成部分には同一の符号を付して、その説明は省略する。
本発明の第5の実施形態に係る電力用半導体素子について、図15を参照しながら説明する。第4の実施形態の電力用半導体素子13との違いは、絶縁膜が、p型ベース層及びp型ピラー層の中に配設された高誘電体膜である点である。なお、第1乃至第4の実施形態及び変形例と同一構成部分には同一の符号を付して、その説明は省略する。
本発明の第6の実施形態に係る電力用半導体素子について、図17を参照しながら説明する。第1の実施形態の電力用半導体素子1との違いは、n型ピラー層が、不均一な濃度分布を有している点である。なお、第1乃至第5の実施形態及び変形例と同一構成部分には同一の符号を付して、その説明は省略する。
(付記1) 第1導電型の第1半導体層と、前記第1導電型の第1半導体層上に設けられ、平面に沿った方向周期的な繰り返しによって配置された第1導電型の第2半導体層及び第2導電型の第3半導体層と、前記第1半導体層に電気的に接続された第1の主電極と、前記第3半導体層に接続するように設けられた第2導電型の第4半導体層と、前記第4半導体層表面に選択的に設けられた第1導電型の第5半導体層と、前記第4半導体層及び前記第5半導体層の表面に設けられた第2の主電極と、前記第4半導体層、前記第5半導体層、及び前記第2半導体層の表面にゲート絶縁膜を介して設けられた制御電極と、前記第2半導体層中に形成された複数のトレンチ溝を埋め込んで設けられた絶縁膜とを有することを特徴とする電力用半導体素子。
21 n+型ドレイン層
23、24、81a n型ピラー層
25、26、83 p型ピラー層
27 ドレイン電極
31 p型ベース層
33 n型ソース層
35 ソース電極
37 ゲート電極
39 ゲート絶縁膜
41、42、43、44a、44b、45、46、47、48a、48b、49a、49b、49c、50、51a、51b、51c、52、57、58a、58b 絶縁膜
53a、54a、55a 第1絶縁膜
53b、54b 第2絶縁膜
55b 第3絶縁膜
56a 第4絶縁膜
56b 第5絶縁膜
61、62、63、64a、64b、65、66、67、68a、68b、69a、69b、69c、70、71a、71b、71c、72、73a、73b、74a、74b、75a、75b、76a、76b、77、78a、78b トレンチ溝
81b n型ドリフト層
Claims (3)
- 第1導電型の第1半導体層と、
前記第1導電型の第1半導体層上に設けられ、平面に沿った方向に周期的な繰り返しによって配置された第1導電型の第2半導体層及び第2導電型の第3半導体層と、
前記第1半導体層に電気的に接続された第1の主電極と、
前記第3半導体層に接続するように設けられた第2導電型の第4半導体層と、
前記第4半導体層表面に選択的に設けられた第1導電型の第5半導体層と、
前記第4半導体層及び前記第5半導体層の表面に設けられた第2の主電極と、
前記第4半導体層、前記第5半導体層、及び前記第2半導体層の表面にゲート絶縁膜を介して設けられた制御電極と、
1つの前記第2半導体層中において、前記繰り返し方向に、前記第1半導体層に到達しないよう複数に設けられ、平面視で破線状またはドット状のパターンを有する絶縁膜と、
を有することを特徴とする電力用半導体素子。 - 前記第2半導体層の不純物濃度が、前記繰り返し方向で変化していることを特徴とする請求項1に記載の電力用半導体素子。
- 前記第2半導体層の不純物濃度が、前記絶縁膜より離れるほど高くなる分布を有することを特徴とする請求項1乃至2のいずれか1項に記載の電力用半導体素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2009194841A JP5002628B2 (ja) | 2009-08-25 | 2009-08-25 | 電力用半導体素子 |
US12/862,490 US8680608B2 (en) | 2009-08-25 | 2010-08-24 | Power semiconductor device with a low on resistence |
CN201010263767.5A CN101997034B (zh) | 2009-08-25 | 2010-08-25 | 电力半导体元件 |
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JP2009194841A JP5002628B2 (ja) | 2009-08-25 | 2009-08-25 | 電力用半導体素子 |
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JP2011049257A JP2011049257A (ja) | 2011-03-10 |
JP5002628B2 true JP5002628B2 (ja) | 2012-08-15 |
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JP2009194841A Expired - Fee Related JP5002628B2 (ja) | 2009-08-25 | 2009-08-25 | 電力用半導体素子 |
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US (1) | US8680608B2 (ja) |
JP (1) | JP5002628B2 (ja) |
CN (1) | CN101997034B (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5852863B2 (ja) * | 2011-11-28 | 2016-02-03 | 株式会社日立製作所 | 4h−SiC半導体素子及び半導体装置 |
TWI463571B (zh) * | 2011-12-08 | 2014-12-01 | Vanguard Int Semiconduct Corp | 半導體裝置的製造方法 |
CN103165463B (zh) * | 2011-12-19 | 2015-10-14 | 世界先进积体电路股份有限公司 | 半导体装置的制造方法 |
JP2013175655A (ja) * | 2012-02-27 | 2013-09-05 | Toshiba Corp | 電力用半導体装置及びその製造方法 |
TW201430957A (zh) * | 2013-01-25 | 2014-08-01 | Anpec Electronics Corp | 半導體功率元件的製作方法 |
US9558986B2 (en) * | 2013-09-18 | 2017-01-31 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
CN106298480A (zh) * | 2015-05-22 | 2017-01-04 | 北大方正集团有限公司 | 超结器件制造方法及超结器件 |
JP6781667B2 (ja) * | 2017-06-08 | 2020-11-04 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP7059556B2 (ja) * | 2017-10-05 | 2022-04-26 | 富士電機株式会社 | 半導体装置 |
WO2019167528A1 (ja) * | 2018-02-27 | 2019-09-06 | ソニー・オリンパスメディカルソリューションズ株式会社 | 医療用観察装置 |
TWI801670B (zh) * | 2018-10-04 | 2023-05-11 | 日商索尼半導體解決方案公司 | 半導體元件及半導體裝置 |
KR102306123B1 (ko) * | 2020-03-19 | 2021-09-28 | 파워마스터반도체 주식회사 | 반도체 장치 |
CN117497604A (zh) * | 2023-12-29 | 2024-02-02 | 深圳天狼芯半导体有限公司 | 一种改进型平面栅mosfet及制备方法 |
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JP3634830B2 (ja) * | 2002-09-25 | 2005-03-30 | 株式会社東芝 | 電力用半導体素子 |
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US8022474B2 (en) * | 2008-09-30 | 2011-09-20 | Infineon Technologies Austria Ag | Semiconductor device |
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US8680608B2 (en) | 2014-03-25 |
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