JP4971318B2 - 熱処理支持タワー用の着脱可能なエッジリング - Google Patents
熱処理支持タワー用の着脱可能なエッジリング Download PDFInfo
- Publication number
- JP4971318B2 JP4971318B2 JP2008520262A JP2008520262A JP4971318B2 JP 4971318 B2 JP4971318 B2 JP 4971318B2 JP 2008520262 A JP2008520262 A JP 2008520262A JP 2008520262 A JP2008520262 A JP 2008520262A JP 4971318 B2 JP4971318 B2 JP 4971318B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- tower
- silicon
- edge
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010438 heat treatment Methods 0.000 title description 15
- 235000012431 wafers Nutrition 0.000 claims abstract description 129
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 13
- 239000010453 quartz Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 4
- 238000012545 processing Methods 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 14
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 238000013461 design Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000003780 insertion Methods 0.000 description 7
- 230000037431 insertion Effects 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 230000005484 gravity Effects 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 210000001364 upper extremity Anatomy 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004814 ceramic processing Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 210000002435 tendon Anatomy 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
- Y10S414/138—Wafers positioned vertically within cassette
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
本出願は、2005年7月8日に出願された仮出願第60/697,895号と、2005年9月29日に出願された仮出願第60/721,926号の優先権の利益を主張する。
本発明は、一般的に基板、特にシリコンウエハのバッチ熱処理に関する。特に、本発明は、ウエハ支持タワーに用いられる補助リングに関する。
有利には、リングは例えば重力によりタワーに受動連結される。リングの内側または外側末端に形成される凹部で、またはその横方向の側上の段により、前記連結を提供できる。
エッジリング26がある理由で壊れる場合、新しいタワー10を組み込む必要なく、タワー10から除去して新しいエッジリングに交換できる。
エッジリング70について以前に述べたように、後部凹部がエッジリング110の環状の末端に接触するように構成されると、エッジリング110の後部凹部112、114は除去できる。
シリコンエッジリングは大きな効果を示すが、タワーまたはエッジリングが石英、炭化ケイ素、またはシリコン含浸炭化ケイ素のような他の材料からなっていても、着脱構成を含む本発明の他の特徴は有用である。このような全ての材料について、リングおよびタワーが単純な構造を有し、改良が容易になり、経済有意義な製造が可能となる。
Claims (13)
- 2つのベースと、前記ベースに固定された複数の垂直な脚と、を含むタワーを備えるタワーアセンブリであって、
前記複数の垂直な脚は、
前記複数の垂直な脚のそれぞれから半径方向内向きに延び、
縦方向に平行な配列で複数のウエハを着脱可能に直接に支持し、隣接するウエハの間で間隔を空けて複数のエッジリングを着脱可能に直接に支持する複数の指を含み、
前記複数のエッジリングは、前記ウエハの直径外に半径方向外向きに延び、
前記複数の指のそれぞれは、
ウエハを支える高さに位置する、半径方向内向きのウエハ支持面と、
前記ウエハを支える高さより下方のエッジリングを支える高さに位置する、半径方向外向きのエッジリング支持面と、
前記ウエハの直径外に位置して前記ウエハ支持面上に支持され、前記ウエハを前記タワー上に整列させ、前記ウエハを支える高さより上方に延びるリッジと、
前記リッジと前記半径方向外向きのエッジリング支持面との間に延びる傾斜面と、を含むことを特徴とするタワーアセンブリ。 - 前記複数のエッジリングを更に備えることを特徴とする請求項1記載のタワーアセンブリ。
- 前記タワーと前記複数のエッジリングとはシリコンからなることを特徴とする請求項2記載のタワーアセンブリ。
- 前記複数のエッジリングのそれぞれは、ランダム配向多結晶シリコンを含むことを特徴とする請求項3記載のタワーアセンブリ。
- 前記タワーは、石英、炭化ケイ素、およびシリコン含浸炭化ケイ素からなるグループから選択された材料を含むことを特徴とする請求項1または2記載のタワーアセンブリ。
- 前記複数のエッジリングのそれぞれは、環状であり、前記指と係合する複数の半径方向内向きの凹部を含み、
前記複数の半径方向内向きの凹部のそれぞれは、前記エッジリング支持面により支持されるセグメント部を形成し、
前記セグメント部は、前記半径方向内向きの凹部の半径方向外側に位置することを特徴とする請求項1記載のタワーアセンブリ。 - 前記複数のエッジリングの環状幅は、垂直方向で隣接するウエハ間のピッチよりも大きいことを特徴とする請求項2記載のタワーアセンブリ。
- 前記半径方向内向きのウエハ支持面は、半径方向内向きの先端の側壁を有し、
前記複数のエッジリングのそれぞれは、
前記ウエハの直径より大きい外径を有する環状の部材と、
複数の半径方向内向きの凹部と、を含み、
前記環状の部材は、少なくとも99at%のシリコン、石英、炭化ケイ素、およびシリコン含浸炭化ケイ素からなるグループから選択された材料を含み、
前記複数の半径方向内向きの凹部は、前記エッジリングが前記タワーに挿入され、前記半径方向外向きのエッジリング支持面に落下する時、前記先端の側壁を通過する側壁を有することを特徴とする請求項1記載のタワーアセンブリ。 - 複数の円形の基板と複数のエッジリングとを支持する支持タワーであって、
2つのベースと、
前記2つのベースに固定され、中心軸の周りに配列される複数の脚と、を含み、
前記脚のうちで少なくとも2本は、
軸方向に延びるステム部と、
前記複数の円形の基板を支持するように前記ステム部に沿って軸方向に配列され、中心軸に向かって半径方向内向きに延びる複数のウエハ指と、
前記複数のウエハ指と交互して前記ステム部に沿って軸方向に配列され、複数のエッジリングを支持し、中心軸に向かって半径方向内向きに延びる複数のリング指と、を含み、
前記複数のウエハ指のそれぞれは、
ウエハ支持領域と、前記ウエハ支持領域の後方に位置し、前記ウエハ支持領域と結合するリッジとを有し、
前記複数のリング指のそれぞれは、
前部の指エッジと、支持される前記複数のエッジリングのうち一つの末端の後部に位置するリングリッジとにより形成されるリング支持領域と、
前記リングリッジの後方に位置する指段と、
前記指段の上部と、前記リング指より上方に位置する前記ウエハ指の底部との間の通路と、を含むことを特徴とする支持タワー。 - 複数のエッジリングを更に含むことを特徴とする請求項9記載の支持タワー。
- 前記支持タワーは、石英、シリコン、炭化ケイ素、およびシリコン含浸炭化ケイ素からなるグループから選択された材料を含むことを特徴とする請求項9または10記載の支持タワー。
- 前記複数のエッジリングのそれぞれは、ランダム配向多結晶シリコンを含むことを特徴とする請求項9または10記載の支持タワー。
- 加熱炉内に取り付け可能なシリコンライナと、
前記シリコンライナ内に取り付け可能で、複数の脚を含むシリコンタワーと、を含み、
前記シリコンタワーは、縦方向に平行な配列で複数のウエハを着脱可能に直接に支持し、隣接するウエハの間に間隔を空けて複数のエッジリングを着脱可能に直接に支持し、
前記複数の脚は垂直に延び、前記脚のそれぞれから半径方向内向きに突出した複数の指を含み、
前記複数の指のそれぞれは、
ウエハを支える高さに位置する、半径方向内向きのウエハ支持面と、
前記ウエハを支える高さより下方のエッジリングを支える高さに位置する、半径方向外向きのエッジリング支持面と、
前記ウエハの直径外に位置して前記ウエハ支持面上に支持され、前記ウエハを前記タワー上に整列させ、前記ウエハを支える高さより上方に延びるリッジと、
前記リッジと前記半径方向外向きのエッジリング支持面との間に延びる傾斜面と、を含み、
前記シリコンライナとタワーとの間に取り付け可能な少なくとも1つのシリコンガス注入器と、
前記ウエハより大きい外径を有する複数のシリコンエッジリングと、を備えることを特徴とする加熱炉アセンブリ。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69789505P | 2005-07-08 | 2005-07-08 | |
US60/697,895 | 2005-07-08 | ||
US72192605P | 2005-09-29 | 2005-09-29 | |
US60/721,926 | 2005-09-29 | ||
US11/329,971 | 2006-01-11 | ||
US11/329,971 US7736436B2 (en) | 2005-07-08 | 2006-01-11 | Detachable edge ring for thermal processing support towers |
PCT/US2006/024716 WO2007008383A2 (en) | 2005-07-08 | 2006-06-26 | Detachable edge ring for thermal processing support towers |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009500850A JP2009500850A (ja) | 2009-01-08 |
JP2009500850A5 JP2009500850A5 (ja) | 2009-07-30 |
JP4971318B2 true JP4971318B2 (ja) | 2012-07-11 |
Family
ID=37617153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008520262A Active JP4971318B2 (ja) | 2005-07-08 | 2006-06-26 | 熱処理支持タワー用の着脱可能なエッジリング |
Country Status (6)
Country | Link |
---|---|
US (1) | US7736436B2 (ja) |
JP (1) | JP4971318B2 (ja) |
KR (1) | KR101301228B1 (ja) |
CN (1) | CN101627151B (ja) |
TW (1) | TWI409911B (ja) |
WO (1) | WO2007008383A2 (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7661544B2 (en) * | 2007-02-01 | 2010-02-16 | Tokyo Electron Limited | Semiconductor wafer boat for batch processing |
JP4987580B2 (ja) * | 2007-06-12 | 2012-07-25 | コバレントマテリアル株式会社 | 縦型ウエハボート |
JP5042950B2 (ja) * | 2008-09-05 | 2012-10-03 | 東京エレクトロン株式会社 | 縦型熱処理装置及び基板支持具 |
DE112009003755B4 (de) | 2008-12-17 | 2016-02-04 | Honda Motor Co., Ltd. | Fördervorrichtung, Verfahren zum Herstellen einer Fördervorrichtung und Verfahren zum Wärmebehandeln von Metallringen unterVerwendung einer Fördervorrichtung |
WO2011027823A1 (ja) * | 2009-09-02 | 2011-03-10 | 本田技研工業株式会社 | 搬送ラック、金属リングの保持方法及び熱処理方法 |
USD666709S1 (en) * | 2010-06-21 | 2012-09-04 | Saint-Gobain Ceramics & Plastics, Inc. | Kiln post |
EP2684478B1 (en) * | 2011-03-11 | 2017-05-31 | Daicel-Evonik Ltd. | Sheet for shoe sole and shoe sole using sheet |
US8746666B2 (en) * | 2011-05-05 | 2014-06-10 | Varian Semiconductor Equipment Associates, Inc. | Media carrier |
TWI541928B (zh) * | 2011-10-14 | 2016-07-11 | 晶元光電股份有限公司 | 晶圓載具 |
US9153466B2 (en) * | 2012-04-26 | 2015-10-06 | Asm Ip Holding B.V. | Wafer boat |
TWM447450U (zh) * | 2012-08-24 | 2013-02-21 | Wistron Corp | 支撐結構、卡榫與具有其之支撐架 |
KR102098306B1 (ko) * | 2013-02-20 | 2020-04-08 | 삼성디스플레이 주식회사 | 기판 수납 장치 |
DE102013107188A1 (de) * | 2013-03-18 | 2014-09-18 | Schott Ag | Rohling aus Silizium, Verfahren zu dessen Herstellung sowie Verwendung desselben |
DE102013107189A1 (de) * | 2013-03-22 | 2014-09-25 | Schott Ag | Rohling aus Silizium, Verfahren zu dessen Herstellung sowie Verwendung desselben |
DE102013107193A1 (de) * | 2013-04-08 | 2014-10-09 | Schott Ag | Rohling aus Silizium, Verfahren zu dessen Herstellung sowie Verwendung desselben |
CN103743239B (zh) * | 2013-12-27 | 2015-05-20 | 深圳市华星光电技术有限公司 | 石英卡夹装置及其制作方法与带该石英卡夹装置的oled高温炉 |
JP6304891B2 (ja) * | 2015-02-10 | 2018-04-04 | クアーズテック株式会社 | 縦型ウエハボート |
JP6770461B2 (ja) * | 2017-02-21 | 2020-10-14 | クアーズテック株式会社 | 縦型ウエハボート |
JP7030604B2 (ja) * | 2018-04-19 | 2022-03-07 | 三菱電機株式会社 | ウエハボートおよびその製造方法 |
CN110246784B (zh) * | 2019-06-19 | 2021-05-07 | 西安奕斯伟硅片技术有限公司 | 一种支撑结构和具有其的热处理装置 |
JP6770617B1 (ja) * | 2019-08-09 | 2020-10-14 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及び基板保持具 |
CN113327884B (zh) * | 2020-02-29 | 2023-10-17 | 长鑫存储技术有限公司 | 晶圆支撑件、晶圆加工装置及晶圆加工方法 |
US12027397B2 (en) * | 2020-03-23 | 2024-07-02 | Applied Materials, Inc | Enclosure system shelf including alignment features |
WO2022049675A1 (ja) * | 2020-09-02 | 2022-03-10 | 株式会社Kokusai Electric | 基板保持具、基板処理装置及び半導体装置の製造方法 |
TWI751814B (zh) * | 2020-09-22 | 2022-01-01 | 家登精密工業股份有限公司 | 支撐片狀物的中央支撐裝置及存放片狀物的儲存設備 |
CN113345822B (zh) * | 2021-07-16 | 2023-12-01 | 江苏天芯微半导体设备有限公司 | 批处理用晶圆支撑架和加载互锁真空室 |
CN117979474B (zh) * | 2024-03-29 | 2024-06-07 | 楚赟精工科技(上海)有限公司 | 半导体设备加热装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5162047A (en) * | 1989-08-28 | 1992-11-10 | Tokyo Electron Sagami Limited | Vertical heat treatment apparatus having wafer transfer mechanism and method for transferring wafers |
JP2963145B2 (ja) * | 1990-04-18 | 1999-10-12 | 東京エレクトロン株式会社 | Cvd膜の形成方法及び形成装置 |
US5192371A (en) * | 1991-05-21 | 1993-03-09 | Asm Japan K.K. | Substrate supporting apparatus for a CVD apparatus |
JP3234617B2 (ja) * | 1991-12-16 | 2001-12-04 | 東京エレクトロン株式会社 | 熱処理装置用基板支持具 |
JPH05291166A (ja) * | 1992-04-14 | 1993-11-05 | Tokyo Electron Tohoku Ltd | 異径被処理体用ボート及びそれを用いた被処理体の移し換え方法 |
JP3100252B2 (ja) * | 1992-05-26 | 2000-10-16 | 東京エレクトロン株式会社 | 被処理体用ボート及びそれを用いた被処理体の移し換え方法ならびに熱処理装置 |
JP3660064B2 (ja) * | 1995-07-13 | 2005-06-15 | 株式会社半導体エネルギー研究所 | 減圧cvd装置 |
JPH0992625A (ja) * | 1995-09-20 | 1997-04-04 | Tokyo Electron Ltd | 熱処理用ボ−ト |
JP3507624B2 (ja) * | 1996-06-28 | 2004-03-15 | 東京エレクトロン株式会社 | 熱処理用ボ−ト及び熱処理装置 |
JP3388668B2 (ja) * | 1996-02-29 | 2003-03-24 | 東京エレクトロン株式会社 | 熱処理用ボ−ト及び縦型熱処理装置 |
EP0884769A1 (en) * | 1996-02-29 | 1998-12-16 | Tokyo Electron Limited | Heat-treating boat for semiconductor wafer |
US6156121A (en) * | 1996-12-19 | 2000-12-05 | Tokyo Electron Limited | Wafer boat and film formation method |
US6309928B1 (en) * | 1998-12-10 | 2001-10-30 | Taiwan Semiconductor Manufacturing Company | Split-gate flash cell |
US6284997B1 (en) * | 2000-11-08 | 2001-09-04 | Integrated Materials, Inc. | Crack free welding of silicon |
-
2006
- 2006-01-11 US US11/329,971 patent/US7736436B2/en not_active Expired - Fee Related
- 2006-06-26 WO PCT/US2006/024716 patent/WO2007008383A2/en active Application Filing
- 2006-06-26 KR KR1020087003309A patent/KR101301228B1/ko active IP Right Grant
- 2006-06-26 CN CN2006800249145A patent/CN101627151B/zh not_active Expired - Fee Related
- 2006-06-26 JP JP2008520262A patent/JP4971318B2/ja active Active
- 2006-06-28 TW TW095123425A patent/TWI409911B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2009500850A (ja) | 2009-01-08 |
WO2007008383A3 (en) | 2009-06-04 |
CN101627151A (zh) | 2010-01-13 |
TW200703549A (en) | 2007-01-16 |
KR20080045126A (ko) | 2008-05-22 |
KR101301228B1 (ko) | 2013-08-28 |
TWI409911B (zh) | 2013-09-21 |
CN101627151B (zh) | 2013-01-16 |
WO2007008383A2 (en) | 2007-01-18 |
US20070006803A1 (en) | 2007-01-11 |
US7736436B2 (en) | 2010-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4971318B2 (ja) | 熱処理支持タワー用の着脱可能なエッジリング | |
US7713355B2 (en) | Silicon shelf towers | |
KR101167664B1 (ko) | 배플형 라이너 커버 | |
TWI461570B (zh) | Cvd用托盤以及使用該托盤的成膜方法 | |
US7484958B2 (en) | Vertical boat for heat treatment and method for producing the same | |
TWI488258B (zh) | 增強之晶圓載體 | |
US8287649B2 (en) | Vertical boat for heat treatment and method for heat treatment of silicon wafer using the same | |
JP2006066432A (ja) | 石英治具及び半導体製造装置 | |
JP7419779B2 (ja) | サセプタ及び化学気相成長装置 | |
KR101148510B1 (ko) | 실리콘 부재들을 결합시키기 위한 플라즈마 분사 | |
JP2005056984A (ja) | 気相成長装置及び気相成長方法 | |
JP5273150B2 (ja) | シリコンエピタキシャルウェーハの製造方法 | |
US5882418A (en) | Jig for use in CVD and method of manufacturing jig for use in CVD | |
JP4223455B2 (ja) | サセプタ | |
JP2003142407A (ja) | 薄膜成長装置用のリフトピン、その形成方法およびリフトピン頭部 | |
JP2010135598A (ja) | エピタキシャルウェーハの製造方法 | |
JP4926633B2 (ja) | 単結晶引上げ方法 | |
KR102093838B1 (ko) | 에피택셜 반응기 | |
CN215911411U (zh) | 一种晶圆夹具 | |
JP2012012271A (ja) | 黒鉛ルツボ | |
JP2003142405A (ja) | 半導体基板の製造方法 | |
JP2005072277A (ja) | 熱処理用縦型ボート及びその製造方法 | |
KR101964999B1 (ko) | 주조 장치 및 주조 방법 | |
JP2005019748A (ja) | ウエーハの熱処理用治具及び熱処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090612 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090612 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100831 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110830 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111110 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111206 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120208 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120306 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120405 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150413 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4971318 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150413 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150413 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150413 Year of fee payment: 3 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150413 Year of fee payment: 3 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150413 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150413 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |