JP7030604B2 - ウエハボートおよびその製造方法 - Google Patents
ウエハボートおよびその製造方法 Download PDFInfo
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- JP7030604B2 JP7030604B2 JP2018080516A JP2018080516A JP7030604B2 JP 7030604 B2 JP7030604 B2 JP 7030604B2 JP 2018080516 A JP2018080516 A JP 2018080516A JP 2018080516 A JP2018080516 A JP 2018080516A JP 7030604 B2 JP7030604 B2 JP 7030604B2
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- wafer
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- heat treatment
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- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 235000012431 wafers Nutrition 0.000 claims description 190
- 230000003746 surface roughness Effects 0.000 claims description 13
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 52
- 229910010271 silicon carbide Inorganic materials 0.000 description 51
- 238000010438 heat treatment Methods 0.000 description 27
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- 238000003780 insertion Methods 0.000 description 7
- 230000037431 insertion Effects 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
し、熱処理された半導体ウエハをウエハキャリアに収納する。この一連の搬送動作の中に、枚葉型のロボットアームによってウエハキャリアとウエハボート間で半導体ウエハを搬送する動作と、半導体ウエハが搭載されたウエハボートを熱処理炉内で上下方向に移動させる動作を含んでいる。
図1は、本発明に係る実施の形態のウエハボートを使用する縦型バッチ式熱処理装置100の構成を示す概略図である。図1に示す用に縦型バッチ式熱処理装置100は、複数枚のSiCウエハ6が収容可能なウエハキャリア1を装置外部との間で出し入れするキャリア室70と、キャリア室70に連通し、複数枚のSiCウエハ6を、それぞれの主面が上下で対向するように搭載する石英のウエハボート3が格納されるボート室80と、ボート室80の上方に設けられ、ウエハボート3ごと複数枚のSiCウエハ6に対して熱処理を行う熱処理炉5が配置された熱処理室90とを備えている。石英を用いることで、耐熱性に優れたウエハボート3を得ることができる。なお、ウエハボート3の材質としてはサファイアなども考えられる。
熱処理炉5内に挿入されるようにボートエレベーター4を上昇させることで載置台41が開口部を塞ぎ、熱処理炉5は密閉されることとなる。
Claims (2)
- 複数のSiCウエハを、それぞれの主面が上下で対向するように搭載するウエハボートであって、
前記ウエハボートは石英で構成され、
前記複数のSiCウエハを支持する複数のウエハ棚が、前記複数のSiCウエハの配列方向に沿って設けられたウエハ支持部材を有し、
少なくとも前記ウエハ支持部材全体の表面粗さがRa値で2μm以上4μm以下である、ウエハボート。 - 複数のSiCウエハを、それぞれの主面が上下で対向するように搭載するウエハボートであって、
前記ウエハボートは、
前記複数のSiCウエハを支持する複数のウエハ棚が、前記複数のSiCウエハの配列方向に沿って設けられたウエハ支持部材を有し、
少なくとも前記ウエハ支持部材全体の表面粗さがRa値で2μm以上4μm以下である
ウエハボートの製造方法であって、
表面粗さがRa値で0.5~1μmの未処理のウエハボートを準備する工程と、
前記未処理のウエハボート全体を、
濃度5~20%の王水に浸漬する工程と、を備える、ウエハボートの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018080516A JP7030604B2 (ja) | 2018-04-19 | 2018-04-19 | ウエハボートおよびその製造方法 |
US16/263,243 US20190326145A1 (en) | 2018-04-19 | 2019-01-31 | Wafer boat and method of manufacturing the same |
DE102019204635.5A DE102019204635A1 (de) | 2018-04-19 | 2019-04-02 | Wafer-Boot und Verfahren zum Herstellen desselben |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018080516A JP7030604B2 (ja) | 2018-04-19 | 2018-04-19 | ウエハボートおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019192688A JP2019192688A (ja) | 2019-10-31 |
JP7030604B2 true JP7030604B2 (ja) | 2022-03-07 |
Family
ID=68105590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018080516A Active JP7030604B2 (ja) | 2018-04-19 | 2018-04-19 | ウエハボートおよびその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20190326145A1 (ja) |
JP (1) | JP7030604B2 (ja) |
DE (1) | DE102019204635A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110828365A (zh) * | 2019-11-19 | 2020-02-21 | 全球能源互联网研究院有限公司 | 退火组件及退火方法 |
CN113363190B (zh) * | 2021-05-31 | 2022-07-08 | 北海惠科半导体科技有限公司 | 晶舟、扩散设备及半导体器件制造方法 |
CN116516468B (zh) * | 2023-07-04 | 2023-10-13 | 苏州优晶光电科技有限公司 | 多片碳化硅籽晶涂层同时处理的装置和方法 |
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2018
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-
2019
- 2019-01-31 US US16/263,243 patent/US20190326145A1/en not_active Abandoned
- 2019-04-02 DE DE102019204635.5A patent/DE102019204635A1/de not_active Withdrawn
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JP2008031038A (ja) | 2006-07-28 | 2008-02-14 | Heraeus Quarzglas Gmbh & Co Kg | 石英ガラス表面の洗浄方法 |
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JP2012069635A (ja) | 2010-09-22 | 2012-04-05 | Hitachi Kokusai Electric Inc | 成膜装置、ウェハホルダ及び成膜方法 |
Also Published As
Publication number | Publication date |
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JP2019192688A (ja) | 2019-10-31 |
DE102019204635A1 (de) | 2019-10-24 |
US20190326145A1 (en) | 2019-10-24 |
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