CN113327884B - 晶圆支撑件、晶圆加工装置及晶圆加工方法 - Google Patents
晶圆支撑件、晶圆加工装置及晶圆加工方法 Download PDFInfo
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Abstract
本发明涉及一种晶圆支撑件、晶圆加工装置及晶圆加工方法,晶圆支撑件包括柱体与支撑块。风管的口部排出的反应气体能均匀地流向到晶圆的整个表面上方,晶圆对应于支撑块的表面部位的气体量与晶圆的其它部位的气体量基本相同,进而晶圆对应于支撑块的表面部位沉积形成薄膜的厚度与其它部位基本相同,也就是能提高晶圆的边缘部位沉积厚度的均匀性,提高晶圆产品质量。此外,柱体的宽度相对减小,通过抽吸机构将炉体内对应于晶圆处的反应气体抽离的过程中,柱体的阻挡作用同样减弱,反应气体及时地被抽离出反应炉体,从而尽可能地避免反应气体停留在晶圆支撑件的区域发生反应产生副产物颗粒,且该副产物颗粒也容易被抽吸机构抽离出炉体。
Description
技术领域
本发明涉及半导体制造技术领域,特别是涉及一种晶圆支撑件、晶圆加工装置及晶圆加工方法。
背景技术
为了开发高附加值的高性能下一代半导体产品,技术正在朝着集成化设计规则的方向发展。传统的晶圆加工装置包括炉体、设置于炉体内的晶圆支撑件与用于向炉体内通入反应气体的风管。将待进行反应处理的晶圆放置于晶圆支撑件上,风管将反应气体通入到炉体内与晶圆发生反应,反应后的气体被抽吸机构抽离到炉体外,如此循环。经过几小时或十多小时的反应时间,反应气体发生反应后在晶圆的表面上沉积形成一层薄膜。然而,晶圆对应于支撑件的表面部位的薄膜的厚度低于晶圆的其它部位的薄膜的厚度,晶圆的表面上的薄膜的厚度均匀性较低,导致晶圆产品质量低下。
发明内容
基于此,有必要克服现有技术的缺陷,提供一种晶圆支撑件、晶圆加工装置及晶圆加工方法,它能够提高晶圆的边缘部位沉积厚度的均匀性,提高晶圆产品质量。
其技术方案如下:一种晶圆支撑件,包括:柱体,所述柱体的侧壁包括面向晶圆的第一壁面、背向所述晶圆的第二壁面以及连接第一壁面与第二壁面的两个第三壁面,所述第一壁面与所述第二壁面相对设置,两个所述第三壁面相对设置,两个所述第三壁面呈夹角设置,且两个所述第三壁面之间的距离在靠近于所述第一壁面的方向上逐渐减小;与支撑块,所述支撑块为若干个,若干个所述支撑块从上至下依次间隔地设置于所述第一壁面上,所述支撑块用于支撑所述晶圆。
上述的晶圆支撑件,由于柱体的侧壁包括第一壁面、第二壁面及两个第三壁面,两个第三壁面呈夹角设置,且两个第三壁面之间的距离在靠近于第一壁面的方向上逐渐减小,也就是柱体的横截面为或近似为一个扇形面,柱体的侧壁能尽可能地避免阻挡风管的口部排出的反应气体接触晶圆,这样风管的口部排出的反应气体能均匀地流向到晶圆的整个表面上方,晶圆对应于支撑块的表面部位的气体量与晶圆的其它部位的气体量基本相同,进而晶圆对应于支撑块的表面部位沉积形成薄膜的厚度与晶圆的其它部位的薄膜的厚度基本相同,也就是能提高晶圆的边缘部位沉积厚度的均匀性,提高晶圆产品质量。此外,柱体的宽度相对减小,通过抽吸机构将炉体内对应于晶圆处的反应后的气体抽离的过程中,柱体的阻挡作用同样减弱,反应气体及时地被抽离出反应炉体,从而尽可能地避免反应气体停留在晶圆支撑件的区域发生反应产生副产物颗粒,且该副产物颗粒也容易被抽吸机构抽离出炉体。
在其中一个实施例中,两个所述第三壁面靠近于所述第二壁面的一侧之间的距离为W,所述W不大于1cm。
在其中一个实施例中,所述第一壁面为平面,所述第三壁面为平面,所述第三壁面相对于所述第一壁面倾斜设置,所述第三壁面与所述第一壁面之间的夹角为a,所述a为20°~50°。
在其中一个实施例中,所述a为30°~40°。
在其中一个实施例中,所述第一壁面为弧形面,所述第二壁面为弧形面,所述第三壁面为平面。
在其中一个实施例中,所述柱体上还设有若干个通风孔,所述通风孔与所述支撑块对应设置,所述通风孔由所述第一壁面延伸到所述第二壁面。
一种晶圆支撑件,包括:柱体,所述柱体为椭圆柱体,所述柱体的侧壁包括面向晶圆的第一壁面与背向所述晶圆的第二壁面,所述第一壁面与所述第二壁面相连,所述第二壁面为椭圆柱面;及支撑块,所述支撑块为若干个,若干个所述支撑块从上至下依次间隔地设置于所述第一壁面上,所述支撑块用于支撑所述晶圆。
上述的晶圆支撑件,由于柱体的侧壁包括第一壁面与第二壁面,第二壁面为椭圆柱面,柱体的侧壁对风管的口部排出的反应气体的阻力作用减弱,这样风管的口部排出的反应气体能均匀地流向到晶圆的整个表面上方,晶圆对应于支撑块的表面部位的气体量与晶圆的其它部位的气体量基本相同,进而晶圆对应于支撑块的表面部位沉积形成薄膜的厚度与晶圆的其它部位的薄膜的厚度基本相同,也就是能提高晶圆的边缘部位沉积厚度的均匀性,提高晶圆产品质量。此外,柱体的宽度相对减小,通过抽吸机构将炉体内对应于晶圆处的反应后的气体抽离的过程中,柱体的阻挡作用同样减弱,反应气体及时地被抽离出反应炉体,从而尽可能地避免反应气体停留在晶圆支撑件的区域发生反应产生副产物颗粒,且该副产物颗粒也容易被抽吸机构抽离出炉体。
在其中一个实施例中,所述柱体与所述支撑块为一体化结构;所述柱体与所述支撑块均为耐高温高压的陶瓷体。
在其中一个实施例中,所述的晶圆支撑件还包括加热件,所述加热件设置于所述柱体上,所述加热件设有对应贴合于所述支撑块的导热板。
在其中一个实施例中,所述椭圆柱体的短轴为b,所述b不大于0.5cm。
一种晶圆加工装置,包括所述的晶圆支撑件,所述晶圆支撑件为若干个,若干个所述晶圆支撑件绕所述晶圆的周围向间隔设置,若干个所述晶圆支撑件的支撑块一一对应设置。
上述的晶圆加工装置,由于包括所述的晶圆支撑件,其技术效果由晶圆支撑件带来,有益效果与晶圆支撑件的有益效果相同,在此不进行赘述。
在其中一个实施例中,所述的晶圆加工装置还包括设置于所述反应炉体内的旋转工作台,所述柱体与所述旋转工作台相连。
一种晶圆加工方法,采用了所述的晶圆加工装置进行晶圆加工的方法。
上述的晶圆加工方法,由于采用了所述的晶圆加工装置进行晶圆加工的方法,其技术效果由晶圆加工装置带来,有益效果与晶圆加工装置的有益效果相同,在此不进行赘述。
附图说明
图1为传统的晶圆支撑件支撑着晶圆的结构示意图;
图2为本发明一实施例所述的晶圆支撑件上装设晶圆的侧视结构图;
图3为本发明一实施例所述的晶圆支撑件的俯视结构示意图;
图4为本发明一实施例所述的晶圆支撑件上装设晶圆工作时的状态示意图;
图5为本发明另一实施例所述的晶圆支撑件的俯视结构示意图;
图6为本发明又一实施例所述的晶圆支撑件的俯视结构示意图;
图7为本发明再一实施例所述的晶圆支撑件的俯视结构示意图;
图8为本发明再一实施例所述的晶圆支撑件的结构示意图;
图9为本发明再又一实施例所述的晶圆支撑件的俯视结构示意图;
图10为本发明再又一实施例所述的晶圆支撑件的结构示意图;
图11为本发明再又一实施例所述的晶圆支撑件的结构示意图;
图12为本发明一实施例所述的晶圆加工装置的结构示意图;
图13为本发明一实施例所述的晶圆支撑件支撑着晶圆的结构示意图。
附图标记:
10、晶圆支撑件;11、柱体;111、第一壁面;112、第二壁面;113、第三壁面;12、支撑块;13、通风孔;20、晶圆;30、反应炉体;40、风管;50、抽吸机构;60、旋转工作台;70、晶圆支撑件;71、柱体;72、支撑块。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂,下面结合附图对本发明的具体实施方式做详细的说明。在下面的描述中阐述了很多具体细节以便于充分理解本发明。但是本发明能够以很多不同于在此描述的其它方式来实施,本领域技术人员可以在不违背本发明内涵的情况下做类似改进,因此本发明不受下面公开的具体实施例的限制。
在本发明的描述中,需要理解的是,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本发明的描述中,“多个”的含义是至少两个,例如两个,三个等,除非另有明确具体的限定。
在本发明的描述中,需要理解的是,当一个元件被认为是“连接”另一个元件,可以是直接连接到另一个元件或者可能同时存在中间元件。相反,当元件为称作“直接”与另一元件连接时,不存在中间元件。
请参阅图1,一般地,传统的晶圆加工装置包括若干个晶圆支撑件70。若干个晶圆支撑件70绕晶圆20的周围隔设置,晶圆20同步放置于若干个晶圆支撑件70上由若干个晶圆支撑件70同步支撑,支撑效果较为稳固。具体而言,传统的晶圆支撑件70包括截面为半圆形或近似半圆形的柱体71,及由上至下依次设置于柱体71的平直的侧面上的若干个支撑块72。待进行加工处理的晶圆20放置于支撑块72上。风管设置于柱体71的背面,风管的口部对着柱体71的弧形的侧面。风管的口部向外排风时,将反应气体吹向对应的晶圆20,以在晶圆20的表面上沉积形成薄膜。为了保证晶圆支撑件70的结构强度,以稳定地承载住多个晶圆20。柱体71的高度一般在1m至2m,柱体71的宽度较宽通常在2cm以上。然而,风管中的反应气体吹向晶圆支撑件70的晶圆20的过程中,一方面,柱体71对反应气体起到阻挡作用,导致一部分反应气体不能直接流向晶圆20对应于支撑块72的表面部位,从而导致晶圆20对应于支撑块72的表面部位的气体量减小,进而导致晶圆20对应于支撑块72的表面部位沉积形成薄膜的厚度降低;另一方面,柱体71的宽度较宽,通过抽吸机构将炉体内对应于晶圆20处的反应后的气体抽离的过程中,柱体71同样起到阻挡作用,不仅导致反应气体停留在晶圆支撑件70的区域发生反应产生副产物颗粒,该副产物颗粒还将附着于柱体71及支撑块72的表面上,且该副产物颗粒还不容易被抽吸机构抽离出炉体,进而影响到晶圆20产品质量。
在一个实施例中,请参阅图2至图4及图12,一种晶圆支撑件10,包括柱体11与支撑块12。所述柱体11的侧壁包括面向晶圆20的第一壁面111、背向所述晶圆20的第二壁面112以及连接第一壁面111与第二壁面112的两个第三壁面113。所述第一壁面111与所述第二壁面112相对设置。两个所述第三壁面113相对设置,两个所述第三壁面113呈夹角设置,且两个所述第三壁面113之间的距离在靠近于所述第一壁面111的方向上逐渐减小。所述支撑块12为若干个,若干个所述支撑块12从上至下依次间隔地设置于所述第一壁面111上,所述支撑块12用于支撑所述晶圆20。
上述的晶圆支撑件10,由于柱体11的侧壁包括第一壁面111、第二壁面112及两个第三壁面113,两个第三壁面113呈夹角设置,且两个第三壁面113之间的距离在靠近于第一壁面111的方向上逐渐减小,也就是柱体11的横截面为或近似为一个扇形面,柱体11的侧壁能尽可能地避免阻挡风管40的口部排出的反应气体接触晶圆20,这样风管40的口部排出的反应气体能均匀地流向到晶圆20的整个表面上方,晶圆20对应于支撑块12的表面部位的气体量与晶圆20的其它部位的气体量基本相同,进而晶圆20对应于支撑块12的表面部位沉积形成薄膜的厚度与晶圆20的其它部位的薄膜的厚度基本相同,也就是能提高晶圆20的边缘部位沉积厚度的均匀性,提高晶圆20产品质量。此外,柱体11的宽度相对减小,通过抽吸机构50将炉体内对应于晶圆20处的反应后的气体抽离的过程中,柱体11的阻挡作用同样减弱,反应气体及时地被抽离出反应炉体30,从而尽可能地避免反应气体停留在晶圆支撑件10的区域发生反应产生副产物颗粒,且该副产物颗粒也容易被抽吸机构50抽离出反应炉体30。
进一步地,请参阅图2至图4,两个所述第三壁面113靠近于所述第二壁面112的一侧之间的距离为W,所述W不大于1cm。如此,柱体11的宽度相对减小,也就是对反应气体的阻挡作用减小,有利于反应气体在晶圆20的表面上方流动。
在一个实施例中,请参阅图2至图4,所述第一壁面111为平面,所述第三壁面113为平面,所述第三壁面113相对于所述第一壁面111倾斜设置,所述第三壁面113与所述第一壁面111之间的夹角为a,所述a为20°~50°。如此,一方面,该夹角范围的柱体11对反应气体的阻挡作用较小;另一方面,能够保证柱体11的结构强度,不容易断裂,能实现支撑住多个晶圆20。
进一步地,请参阅图2至图4及图7与图8,所述a为30°~40°。如此,能较好地保证柱体11的结构强度的同时,还对反应气体的阻挡作用较小。较好地,a具体例如为33°、34°、35°、36°、37°、38°或39°。
此外,具体而言,第二壁面112为弧形面。如此,弧形状的第二壁面112对风管40的口部向外排出的反应气体起到导向作用,有利于反应气体流动到晶圆20的上方并与晶圆20进行反应。
在另一个实施例中,请参阅图5及图6,所述第一壁面111为弧形面,所述第二壁面112为弧形面,所述第三壁面113为平面。第一壁面111的弧形面的口部可以面向第二壁面112,也可以背向第二壁面112。也能实现减小对反应气体的阻挡作用,能实现反应气体在晶圆20上方更好地流动性。
在一个实施例中,请参阅图2,所述柱体11上还设有若干个通风孔13,所述通风孔13与所述支撑块12对应设置,所述通风孔13由所述第一壁面111延伸到所述第二壁面112。如此,一方面,风管40的口部排出的反应气体可以通过该通风孔13流向晶圆20的上方,使得晶圆20对应于支撑块12的表面部位的气体量与晶圆20的其它部位的气体量基本相同,进而晶圆20对应于支撑块12的表面部位沉积形成薄膜的厚度与晶圆20的其它部位的薄膜的厚度基本相同,也就是能提高晶圆20的边缘部位沉积厚度的均匀性,提高晶圆20产品质量。另一方面,晶圆20上方的反应过后的反应气体也可以通过该通风孔13向外排放。
进一步地,所述柱体11与所述支撑块12为一体化结构;所述柱体11与所述支撑块12均为耐高温高压的陶瓷体。如此,陶瓷体耐高温高压,与反应气体不发生化学反应,同时材质硬,不易于损坏,使用寿命较长。当然,柱体11与支撑块12也可以采用其它耐高温高压且不与反应气体发生化学反应的材料,在此不进行限定。
作为一个可选的方案,对于反应炉体30内的反应温度在100℃以内或者处于100℃到200℃之间时,所述的晶圆支撑件10还包括加热件。所述加热件设置于所述柱体11上,所述加热件设有对应贴合于所述支撑块12的导热板。如此,在将反应气体通入到晶圆20的上方的同时,使得加热件同步工作,加热件将热量通过导热板传递给支撑块12,由支撑块12将热量传递给晶圆20的边缘的局部部位,这样能实现增加该局部部位处的反应气体的反应速度,从而能增大该晶圆20的边缘部位对应于该局部部位的薄膜的厚度,即可实现提高晶圆20的边缘的厚度均匀性,从而提高晶圆20产品质量。
进一步地,加热件可拆卸地装设于柱体11上。如此,对于反应炉体30内的反应温度在200℃以上时,则将加热件从柱体11上拆卸下来,无需装设于柱体11上,这样便能避免反应炉体30内的高温气体对于加热件造成不良影响;此外,加热件也已经对支撑块12起不到任何的加热作用时,则可以将加热件从柱体11上拆卸取出。
进一步地,请参阅图2至图4及图7与图8,支撑块12的形状既可以是方形状,又可以是三角形状,或者还可以是其它形状,在此不进行限定。
在一个实施例中,请参阅图9至图12,一种晶圆支撑件10,包括柱体11及支撑块12。所述柱体11为椭圆柱体11,所述柱体11的侧壁包括面向晶圆20的第一壁面111与背向所述晶圆20的第二壁面112。所述第一壁面111与所述第二壁面112相连,所述第二壁面112为椭圆柱面。所述支撑块12为若干个,若干个所述支撑块12从上至下依次间隔地设置于所述第一壁面111上,所述支撑块12用于支撑所述晶圆20。
上述的晶圆支撑件10,由于柱体11的侧壁包括第一壁面111与第二壁面112,第二壁面112为椭圆柱面,柱体11的侧壁对风管40的口部排出的反应气体的阻力作用减弱,这样风管40的口部排出的反应气体能均匀地流向到晶圆20的整个表面上方,晶圆20对应于支撑块12的表面部位的气体量与晶圆20的其它部位的气体量基本相同,进而晶圆20对应于支撑块12的表面部位沉积形成薄膜的厚度与晶圆20的其它部位的薄膜的厚度基本相同,也就是能提高晶圆20的边缘部位沉积厚度的均匀性,提高晶圆20产品质量。此外,柱体11的宽度相对减小,通过抽吸机构50将炉体内对应于晶圆20处的反应后的气体抽离的过程中,柱体11的阻挡作用同样减弱,反应气体及时地被抽离出反应炉体30,从而尽可能地避免反应气体停留在晶圆支撑件10的区域发生反应产生副产物颗粒,且该副产物颗粒也容易被抽吸机构50抽离出炉体。
进一步地,请参阅图9至图11,所述椭圆柱体11的短轴为b,所述b不大于0.5cm。如此,柱体11的宽度相对减小,也就是对反应气体的阻挡作用减小,有利于反应气体在晶圆20的表面上方流动。
具体而言,请参阅图9至图11,第二壁面112为椭圆柱面的其中一部分,支撑块12的壁面为椭圆柱面的另一部分。也就是,晶圆支撑件10的俯视图为一个完整的椭圆形。
在一个实施例中,请参阅图12至图13,一种晶圆加工装置,包括上述任一实施例所述的晶圆支撑件10,还包括反应炉体30、风管40及抽吸机构50。所述晶圆支撑件10装设于反应炉体30内,所述风管40用于将反应气体通入到所述反应炉体30内,所述抽吸机构50用于将所述反应炉体30内的反应气体抽离出所述反应炉体30。
上述的晶圆加工装置,由于包括所述的晶圆支撑件10,其技术效果由晶圆支撑件10带来,有益效果与晶圆支撑件10的有益效果相同,在此不进行赘述。
进一步地,请参阅图12至图13,所述晶圆支撑件10为若干个,若干个所述晶圆支撑件10绕所述晶圆20的周围间隔设置。所述晶圆支撑件10的若干个支撑块12与所述晶圆支撑件10的若干个支撑块12一一对应设置。如此,将晶圆20同步装设于若干个晶圆支撑件10的同一平面的支撑块12上,晶圆20的固定效果较为稳定。具体而言,晶圆支撑件10为两个、三个或四个,便可以稳固地装设晶圆20。当然,晶圆支撑件10也可以为其它数量,在此不进行限定。
进一步地,请参阅图12至图13,所述的晶圆加工装置还包括设置于所述反应炉体30内的旋转工作台60。所述柱体11与所述旋转工作台60相连。如此,当将反应气体通入到反应炉体30的内部的过程中,同步驱动旋转工作台60进行转动,旋转工作台60转动过程中带动晶圆20转动,使得反应气体更加均匀地流动到晶圆20的上方,风管40的口部排出的反应气体能均匀地流向到晶圆20的整个表面上方,晶圆20对应于支撑块12的表面部位的气体量与晶圆20的其它部位的气体量基本相同,进而晶圆20对应于支撑块12的表面部位沉积形成薄膜的厚度与晶圆20的其它部位的薄膜的厚度基本相同,也就是能提高晶圆20的边缘部位沉积厚度的均匀性,提高晶圆20产品质量。
在一个实施例中,一种晶圆加工方法,采用了上述任意一实施例所述的晶圆加工装置进行晶圆加工的方法。
上述的晶圆加工方法,由于采用了所述的晶圆加工装置进行晶圆加工的方法,其技术效果由晶圆加工装置带来,有益效果与晶圆加工装置的有益效果相同,在此不进行赘述。
以上所述实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。
Claims (10)
1.一种晶圆支撑件,用于设于炉体内,在薄膜沉积制备的过程中风管设置于所述晶圆支撑件的柱体背面,所述风管中的反应气体吹向所述晶圆支撑件的晶圆,抽吸机构用于将所述炉体内对应于晶圆处的反应后的气体向外抽离,其特征在于,包括:
柱体,所述柱体的侧壁包括面向晶圆的第一壁面、背向所述晶圆的第二壁面以及连接第一壁面与第二壁面的两个第三壁面,所述第一壁面与所述第二壁面相对设置,所述第二壁面用于与所述风管的出风部相对设置,两个所述第三壁面相对设置,两个所述第三壁面呈夹角设置,且两个所述第三壁面之间的距离在靠近于所述第一壁面的方向上逐渐减小,所述第一壁面为平面,所述第三壁面为平面,所述第三壁面相对于所述第一壁面倾斜设置,所述第三壁面与所述第一壁面之间的夹角为a,所述a为20°~50°,两个所述第三壁面靠近于所述第二壁面的一侧之间的距离为W,所述W不大于1cm;与
支撑块,所述支撑块为若干个,若干个所述支撑块从上至下依次间隔地设置于所述第一壁面上,所述支撑块用于支撑所述晶圆。
2.根据权利要求1所述的晶圆支撑件,其特征在于,所述柱体与所述支撑块为一体化结构。
3.根据权利要求1所述的晶圆支撑件,其特征在于,所述a为30°~40°。
4.根据权利要求3所述的晶圆支撑件,其特征在于,a为33°、34°、35°、36°、37°、38°或39°。
5.根据权利要求1所述的晶圆支撑件,其特征在于,所述第二壁面为弧形面。
6.根据权利要求1所述的晶圆支撑件,其特征在于,所述柱体上还设有若干个通风孔,所述通风孔与所述支撑块对应设置,所述通风孔由所述第一壁面延伸到所述第二壁面。
7.根据权利要求1所述的晶圆支撑件,其特征在于,还包括加热件,所述加热件设置于所述柱体上,所述加热件设有对应贴合于所述支撑块的导热板。
8.根据权利要求7所述的晶圆支撑件,其特征在于,所述加热件可拆卸地装设于所述柱体上。
9.一种晶圆加工装置,其特征在于,包括如权利要求1至8任意一项所述的晶圆支撑件,所述晶圆支撑件为若干个,若干个所述晶圆支撑件绕所述晶圆的周围间隔设置,若干个所述晶圆支撑件的支撑块一一对应设置。
10.一种晶圆加工方法,其特征在于,采用了如权利要求9所述的晶圆加工装置进行晶圆加工的方法。
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US20220076985A1 (en) | 2022-03-10 |
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