JP4960058B2 - 増幅型固体撮像素子 - Google Patents
増幅型固体撮像素子 Download PDFInfo
- Publication number
- JP4960058B2 JP4960058B2 JP2006273177A JP2006273177A JP4960058B2 JP 4960058 B2 JP4960058 B2 JP 4960058B2 JP 2006273177 A JP2006273177 A JP 2006273177A JP 2006273177 A JP2006273177 A JP 2006273177A JP 4960058 B2 JP4960058 B2 JP 4960058B2
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- Prior art keywords
- type semiconductor
- semiconductor layer
- substrate
- pixel
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- 230000003321 amplification Effects 0.000 title claims description 16
- 238000003199 nucleic acid amplification method Methods 0.000 title claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 94
- 239000000758 substrate Substances 0.000 claims description 78
- 238000003384 imaging method Methods 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 7
- 208000030649 Orofaciodigital Syndromes Diseases 0.000 description 14
- 208000008424 osteofibrous dysplasia Diseases 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 11
- 238000002955 isolation Methods 0.000 description 10
- 239000000969 carrier Substances 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 201000003736 Joubert syndrome with orofaciodigital defect Diseases 0.000 description 1
- 208000015637 Orofaciodigital syndrome type 6 Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
を備えている。
Claims (4)
- P型半導体基板上に第1のN型半導体層をエピタキシャル堆積した半導体基板を用い、前記第1のN型半導体層の表面内に形成され、且つ前記第1のN型半導体層よりも高い不純物濃度を有する第2のN型半導体層の光電変換部が形成された増幅型固体撮像素子において、
前記第1のN型半導体層内であって、G画素及びB画素の前記光電変換部の下方にそれぞれ形成された第1のP型半導体層と、
前記第1のP型半導体層を用いて前記各光電変換部を囲むように形成され、前記第1のP型半導体層までの深さを有する第2のP型半導体層と、
前記第1のP型半導体層と前記P型半導体基板との間に形成された第3のN型半導体層と、
R画素を囲む様に形成され、前記P型半導体基板までの深さを有する第3のP型半導体層と、
を備えた増幅型固体撮像素子。 - 前記第1のP型半導体層の下方の前記第3のN型半導体層が撮像領域周辺に形成されるN型半導体層と電気的に接続される請求項1に記載の増幅型固体撮像素子。
- 前記第1のP型半導体層は、前記G画素及び前記B画素の前記各光電変換部の下方にそれぞれ形成され、前記各第1のP型半導体層は撮像領域で繋がっている請求項1に記載の増幅型固体撮像素子。
- 前記第1のP型半導体層は、前記G画素及び前記B画素の前記各光電変換部の下方にそれぞれ形成され、前記各第1のP型半導体層の下方の前記各第3のN型半導体層は、撮像領域で電気的に繋がっている請求項1に記載の増幅型固体撮像素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006273177A JP4960058B2 (ja) | 2006-10-04 | 2006-10-04 | 増幅型固体撮像素子 |
CNB2007101620196A CN100550406C (zh) | 2006-10-04 | 2007-09-29 | 放大型固体摄像元件 |
US11/866,682 US7705380B2 (en) | 2006-10-04 | 2007-10-03 | Amplification-type solid-state image sensing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006273177A JP4960058B2 (ja) | 2006-10-04 | 2006-10-04 | 増幅型固体撮像素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008091781A JP2008091781A (ja) | 2008-04-17 |
JP4960058B2 true JP4960058B2 (ja) | 2012-06-27 |
Family
ID=39307280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006273177A Expired - Fee Related JP4960058B2 (ja) | 2006-10-04 | 2006-10-04 | 増幅型固体撮像素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7705380B2 (ja) |
JP (1) | JP4960058B2 (ja) |
CN (1) | CN100550406C (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008103566A (ja) * | 2006-10-19 | 2008-05-01 | Toshiba Corp | 固体撮像装置 |
KR20090071067A (ko) * | 2007-12-27 | 2009-07-01 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
JP2010040840A (ja) * | 2008-08-06 | 2010-02-18 | Toshiba Corp | 固体撮像デバイス及びその製造方法 |
JP2010245100A (ja) * | 2009-04-01 | 2010-10-28 | Nikon Corp | 固体撮像素子 |
JP4977181B2 (ja) * | 2009-08-10 | 2012-07-18 | 株式会社東芝 | 固体撮像装置およびその製造方法 |
CN102544031B (zh) * | 2010-12-28 | 2016-03-30 | 英属开曼群岛商恒景科技股份有限公司 | 图像传感器的空穴型超深光二极管及其工艺方法 |
JP6194598B2 (ja) * | 2013-02-28 | 2017-09-13 | 株式会社ニコン | 撮像素子および撮像素子を備えた撮像装置 |
JP6295526B2 (ja) | 2013-07-11 | 2018-03-20 | ソニー株式会社 | 固体撮像装置および電子機器 |
US20150054997A1 (en) * | 2013-08-23 | 2015-02-26 | Aptina Imaging Corporation | Image sensors having pixel arrays with non-uniform pixel sizes |
JP6302216B2 (ja) | 2013-11-08 | 2018-03-28 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2016058635A (ja) | 2014-09-11 | 2016-04-21 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
EP3113224B1 (en) | 2015-06-12 | 2020-07-08 | Canon Kabushiki Kaisha | Imaging apparatus, method of manufacturing the same, and camera |
JP2017045873A (ja) * | 2015-08-27 | 2017-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
EP3404714B1 (en) * | 2016-01-15 | 2020-01-01 | Towerjazz Panasonic Semiconductor Co., Ltd. | Solid-state image capture device |
JP2017208574A (ja) * | 2017-08-17 | 2017-11-24 | 株式会社ニコン | 撮像素子および撮像素子を備えた撮像装置 |
JP6978893B2 (ja) | 2017-10-27 | 2021-12-08 | キヤノン株式会社 | 光電変換装置、その製造方法及び機器 |
JP7097773B2 (ja) * | 2018-07-26 | 2022-07-08 | キヤノン株式会社 | 固体撮像装置、基板および撮像システム |
TWI691096B (zh) * | 2019-01-28 | 2020-04-11 | 力晶積成電子製造股份有限公司 | 半導體元件及其製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6727521B2 (en) * | 2000-09-25 | 2004-04-27 | Foveon, Inc. | Vertical color filter detector group and array |
US6545331B1 (en) * | 1999-12-10 | 2003-04-08 | Innotech Corporation | Solid state imaging device, manufacturing method thereof, and solid state imaging apparatus |
JP2002198507A (ja) | 2000-12-26 | 2002-07-12 | Sony Corp | 固体撮像素子 |
US6482669B1 (en) * | 2001-05-30 | 2002-11-19 | Taiwan Semiconductor Manufacturing Company | Colors only process to reduce package yield loss |
KR20040036087A (ko) * | 2002-10-23 | 2004-04-30 | 주식회사 하이닉스반도체 | 광의 파장에 따라 포토다이오드의 깊이가 다른 씨모스이미지센서 및 그 제조 방법 |
JP2004165462A (ja) * | 2002-11-14 | 2004-06-10 | Sony Corp | 固体撮像素子及びその製造方法 |
JP4208559B2 (ja) * | 2002-12-03 | 2009-01-14 | キヤノン株式会社 | 光電変換装置 |
JP2005166731A (ja) * | 2003-11-28 | 2005-06-23 | Canon Inc | 固体撮像装置 |
JP2005209695A (ja) | 2004-01-20 | 2005-08-04 | Toshiba Corp | 固体撮像装置およびその製造方法 |
JP4794821B2 (ja) * | 2004-02-19 | 2011-10-19 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP4525144B2 (ja) * | 2004-04-02 | 2010-08-18 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
JP2006005265A (ja) | 2004-06-21 | 2006-01-05 | Toshiba Corp | 固体撮像装置 |
JP4718875B2 (ja) | 2005-03-31 | 2011-07-06 | 株式会社東芝 | 固体撮像素子 |
JP2008078302A (ja) * | 2006-09-20 | 2008-04-03 | Canon Inc | 撮像装置および撮像システム |
-
2006
- 2006-10-04 JP JP2006273177A patent/JP4960058B2/ja not_active Expired - Fee Related
-
2007
- 2007-09-29 CN CNB2007101620196A patent/CN100550406C/zh not_active Expired - Fee Related
- 2007-10-03 US US11/866,682 patent/US7705380B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20080251822A1 (en) | 2008-10-16 |
US7705380B2 (en) | 2010-04-27 |
JP2008091781A (ja) | 2008-04-17 |
CN101159282A (zh) | 2008-04-09 |
CN100550406C (zh) | 2009-10-14 |
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